ISC0806NLSATMA1

ISC0806NLS MOSFET OptiMOSTM5Power-Transistor,100V PG-TDSON-8 8 Features 7 5 6 6 7 5 •Idealforhigh-frequencyswitching •Optimizedforcharger •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Pin 1 8 4 2 3 3 2 4 1 Productvalidation QualifiedaccordingtoJEDECStandard Drain Pin 5-8 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V Gate Pin 4 *1 Source Pin 1-3 *1: Internal body diode RDS(on),max 5.4 mΩ ID 97 A Qoss 50 nC QG(0V..4.5V) 20 nC Type/OrderingCode Package Marking RelatedLinks ISC0806NLS PG-TDSON-8 0806NL - Final Data Sheet 1 Rev.2.2,2022-02-28 OptiMOSTM5Power-Transistor,100V ISC0806NLS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.2,2022-02-28 OptiMOSTM5Power-Transistor,100V ISC0806NLS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 97 74 16 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50°C/W2) - 388 A TC=25°C - - 93 mJ ID=43A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 96 2.5 W TC=25°C TA=25°C,RthJA=50°C/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.7 1.3 °C/W - Thermal resistance, junction - case, top RthJC - - 20 °C/W - Device on PCB, 6 cm² cooling area2) RthJA - - 50 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.2,2022-02-28 OptiMOSTM5Power-Transistor,100V ISC0806NLS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.6 2.3 V VDS=VGS,ID=61µA - 0.1 10 1.0 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 5.0 6.5 5.4 7.1 mΩ VGS=10V,ID=50A VGS=4.5V,ID=25A Gate resistance RG - 1.2 - Ω - Transconductance gfs - 89 - S |VDS|≥2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 1.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2600 3400 pF VGS=0V,VDS=50V,f=1MHz Coss - 420 560 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 19 25 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 3.7 - ns VDD=50V,VGS=4.5V,ID=50A, RG,ext=1.6Ω Rise time tr - 5.4 - ns VDD=50V,VGS=4.5V,ID=50A, RG,ext=1.6Ω Turn-off delay time td(off) - 14 - ns VDD=50V,VGS=4.5V,ID=50A, RG,ext=1.6Ω Fall time tf - 7.0 - ns VDD=50V,VGS=4.5V,ID=50A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 8.4 - nC VDD=50V,ID=50A,VGS=0to4.5V Gate charge at threshold Qg(th) - 4.5 - nC VDD=50V,ID=50A,VGS=0to4.5V Gate to drain charge Qgd - 6.9 - nC VDD=50V,ID=50A,VGS=0to4.5V Switching charge Qsw - 11 - nC VDD=50V,ID=50A,VGS=0to4.5V Gate charge total Qg - 20 26 nC VDD=50V,ID=50A,VGS=0to4.5V Gate plateau voltage Vplateau - 3.2 - V VDD=50V,ID=50A,VGS=0to4.5V Gate charge total1) Qg - 37 49 nC VDD=50V,ID=50A,VGS=0to10V Output charge Qoss - 50 - nC VDS=50V,VGS=0V 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.2,2022-02-28 OptiMOSTM5Power-Transistor,100V ISC0806NLS Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 81 A TC=25°C - 388 A TC=25°C - 0.89 1.1 V VGS=0V,IF=50A,Tj=25°C trr - 49 - ns VR=50V,IF=50A,diF/dt=100A/µs Qrr - 67 - nC VR=50V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.2,2022-02-28 OptiMOSTM5Power-Transistor,100V ISC0806NLS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 100 80 80 60 60 ID[A] Ptot[W] 100 40 40 20 20 0 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 102 10 1 µs 10 µs 102 101 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 µs ZthJC[K/W] ID[A] 101 1 ms 100 10 ms 100 10-1 DC 10-1 10-2 10-2 10-1 100 101 102 103 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.2,2022-02-28 OptiMOSTM5Power-Transistor,100V ISC0806NLS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 16 10 V 2.8 V 350 14 3V 300 12 5V 3.5 V 4V 10 200 RDS(on)[mΩ] ID[A] 250 4.5 V 150 4.5 V 8 6 5V 4V 100 50 0 2 3V 2.8 V 0 1 2 3 4 10 V 4 3.5 V 0 5 0 25 50 75 VDS[V] 100 125 150 175 200 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 320 16 280 14 240 12 RDS(on)[mΩ] ID[A] 200 160 25 °C 120 10 150 °C 8 150 °C 80 6 25 °C 40 0 0 1 2 3 4 5 VGS[V] 0 3 6 9 12 15 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 4 RDS(on)=f(VGS),ID=50A;parameter:Tj 7 Rev.2.2,2022-02-28 OptiMOSTM5Power-Transistor,100V ISC0806NLS Diagram10:Typ.gatethresholdvoltage 2.0 2.4 1.6 2.0 VGS(th)[V] RDS(on)(normalizedto25°C) Diagram9:Normalizeddrain-sourceonresistance 1.2 610 µA 1.6 61 µA 0.8 1.2 0.4 -75 -50 -25 0 25 50 75 100 125 150 0.8 -75 175 -50 -25 0 Tj[°C] 25 50 75 100 125 150 175 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th)=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 102 IF[A] C[pF] 103 Coss 102 101 Crss 101 0 20 40 60 80 100 100 0.4 0.6 VDS[V] 1.0 1.2 1.4 1.6 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.8 IF=f(VSD);parameter:Tj 8 Rev.2.2,2022-02-28 OptiMOSTM5Power-Transistor,100V ISC0806NLS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 20 V 50 V 80 V 8 101 IAV[A] 6 25 °C VGS[V] 100 °C 125 °C 4 0 10 2 10-1 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 108 106 VBR(DSS)[V] 104 102 100 98 96 94 -75 -50 -25 0 25 50 75 100 125 150 175 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.2,2022-02-28 OptiMOSTM5Power-Transistor,100V ISC0806NLS 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 01 DIMENSIONS A b c D D1 D2 E E1 e L L1 PG-TDSON-8-U08 DATE: 12.02.2021 MILLIMETERS MIN. MAX. 0.90 1.20 0.34 0.54 0.15 0.35 4.80 5.35 3.90 4.40 0.00 0.22 5.70 6.10 4.05 4.25 1.27 0.45 0.65 0.45 0.65 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.2,2022-02-28 OptiMOSTM5Power-Transistor,100V ISC0806NLS RevisionHistory ISC0806NLS Revision:2022-02-28,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2021-03-15 Release of final version 2.1 2021-04-01 Update of features list 2.2 2022-02-28 Update Id for EAS and footnotes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.2,2022-02-28