ISC104N12LM6ATMA1

ISC104N12LM6 MOSFET OptiMOSTM6Power-Transistor,120V SuperSO8 8 Features •N-channel,logiclevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedaccordingtoJ-STD-020 7 5 6 4 1 2 3 6 5 3 2 4 8 1 Drain Pin 5-8 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Gate Pin 4 Table1KeyPerformanceParameters Parameter Value Unit VDS 120 V RDS(on),max 10.4 mΩ ID 63 A Qoss 37 nC QG(0V...4.5V) 10.4 nC Qrr(1000A/µs) 106 nC *1 Source Pin 1-3 *1: Internal body diode Type/OrderingCode Package ISC104N12LM6 PG-TDSON-8 Final Data Sheet 7 1 Marking RelatedLinks 104N12L6 - Rev.2.0,2022-12-13 OptiMOSTM6Power-Transistor,120V ISC104N12LM6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2022-12-13 OptiMOSTM6Power-Transistor,120V ISC104N12LM6 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 63 44 38 11 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50°C/W2) - 252 A TA=25°C - - 28 A TC=25°C EAS - - 166 mJ ID=10A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 94 3.0 W TC=25°C TA=25°C,RthJA=50°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Thermal resistance, junction - case, top Values Min. Typ. Max. RthJC - - 1.6 °C/W - RthJC - - 20 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area2) - - 50 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2022-12-13 OptiMOSTM6Power-Transistor,120V ISC104N12LM6 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.7 2.2 V VDS=VGS,ID=35µA - 0.1 10 1.0 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 8.8 11.4 16.6 10.4 14.1 - mΩ VGS=10V,ID=28A VGS=4.5V,ID=14A VGS=3.3V,ID=4.6A Gate resistance RG 0.46 0.91 1.37 Ω - Transconductance gfs 30 57 - S |VDS|≥2|ID|RDS(on)max,ID=28A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 120 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 1400 1800 pF VGS=0V,VDS=60V,f=1MHz Coss - 340 440 pF VGS=0V,VDS=60V,f=1MHz Reverse transfer capacitance Crss - 10 17 pF VGS=0V,VDS=60V,f=1MHz Turn-on delay time td(on) - 6 - ns VDD=60V,VGS=10V,ID=14A, RG,ext=1.6Ω Rise time tr - 2.5 - ns VDD=60V,VGS=10V,ID=14A, RG,ext=1.6Ω Turn-off delay time td(off) - 14 - ns VDD=60V,VGS=10V,ID=14A, RG,ext=1.6Ω Fall time tf - 4 - ns VDD=60V,VGS=10V,ID=14A, RG,ext=1.6Ω Unit Note/TestCondition Input capacitance 1) Output capacitance 1) Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 4 5.3 nC VDD=60V,ID=14A,VGS=0to4.5V Gate charge at threshold Qg(th) - 2.5 3.3 nC VDD=60V,ID=14A,VGS=0to4.5V Gate to drain charge1) Qgd - 3.4 5.1 nC VDD=60V,ID=14A,VGS=0to4.5V Switching charge Qsw - 5 - nC VDD=60V,ID=14A,VGS=0to4.5V Gate charge total Qg - 10.4 13 nC VDD=60V,ID=14A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.8 - V VDD=60V,ID=14A,VGS=0to4.5V Qg - 19.6 26 nC VDD=60V,ID=14A,VGS=0to10V Qoss - 37 49 nC VDS=60V,VGS=0V Gate to source charge1) 1) 1) 1) Gate charge total 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2022-12-13 OptiMOSTM6Power-Transistor,120V ISC104N12LM6 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 63 A TC=25°C - 252 A TC=25°C - 0.87 1.0 V VGS=0V,IF=28A,Tj=25°C trr - 23 46 ns VR=60V,IF=14A,diF/dt=300A/µs Qrr - 38 76 nC VR=60V,IF=14A,diF/dt=300A/µs trr - 17 34 ns VR=60V,IF=14A,diF/dt=1000A/µs Qrr - 106 212 nC VR=60V,IF=14A,diF/dt=1000A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2022-12-13 OptiMOSTM6Power-Transistor,120V ISC104N12LM6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 100 70 60 80 50 60 ID[A] Ptot[W] 40 30 40 20 20 10 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 2 10 10 µs 100 ID[A] 101 ZthJC[K/W] 100 µs 1 ms 0 10 10-1 DC 10 ms 10-1 10-2 100 101 102 103 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2022-12-13 OptiMOSTM6Power-Transistor,120V ISC104N12LM6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 250 28 10 V 24 5V 3V 200 3.3 V 20 4V ID[A] 150 4V 100 RDS(on)[mΩ] 4.5 V 16 4.5 V 5V 12 10 V 8 50 3.3 V 4 3V 2.8 V 0 0 1 2 3 4 0 5 0 20 40 60 VDS[V] 80 100 120 140 14 16 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 150 25 125 25 °C 20 175 °C 75 175 °C RDS(on)[mΩ] ID[A] 100 15 100 °C 10 50 25 °C 5 25 0 -55 °C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS[V] 2 4 6 8 10 12 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=28A;parameter:Tj 7 Rev.2.0,2022-12-13 OptiMOSTM6Power-Transistor,120V ISC104N12LM6 Diagram10:Typ.gatethresholdvoltage 2.4 2.4 2.0 2.0 1.6 1.6 VGS(th)[V] RDS(on)(normalizedto25°C) Diagram9:Normalizeddrain-sourceonresistance 1.2 1.2 35 µA 0.8 0.8 0.4 0.4 0.0 -75 -50 -25 0 25 50 75 350 µA 0.0 -75 100 125 150 175 200 -50 -25 0 25 Tj[°C] 50 75 100 125 150 175 200 Tj[°C] RDS(on)=f(Tj),ID=28A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max 103 Ciss 102 IF[A] C[pF] 102 Coss 101 101 Crss 100 0 20 40 60 80 100 120 100 0.0 0.4 VDS[V] 1.2 1.6 2.0 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.8 IF=f(VSD);parameter:Tj 8 Rev.2.0,2022-12-13 OptiMOSTM6Power-Transistor,120V ISC104N12LM6 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 24 V 60 V 96 V 8 101 25 °C 6 VGS[V] IAV[A] 100 °C 150 °C 4 0 10 2 10-1 10-1 100 101 102 103 tAV[µs] 0 0 4 8 12 16 20 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=14Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 132 130 128 126 VBR(DSS)[V] 124 122 120 118 116 114 112 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2022-12-13 OptiMOSTM6Power-Transistor,120V ISC104N12LM6 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 08 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.00 0.22 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 3mm 2 EUROPEAN PROJECTION ISSUE DATE 05.11.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.0,2022-12-13 OptiMOSTM6Power-Transistor,120V ISC104N12LM6 RevisionHistory ISC104N12LM6 Revision:2022-12-13,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2022-12-13 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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