ISP26DP06NMS

ISP26DP06NMS MOSFET OptiMOSTMSmallSignalTransistor,-60V PG-SOT223-3 Features •P-Channel •Verylowon-resistanceRDS(on) •100%avalanchetested •NormalLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Drain Pin 2 Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 260 mΩ ID -1.9 A Type/OrderingCode Package ISP26DP06NMS PG-SOT223-3 Final Data Sheet Gate Pin 1 Source Pin 3 Marking 26DP06NS 1 RelatedLinks - Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP26DP06NMS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP26DP06NMS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Continuous drain current1) Values Unit Note/TestCondition -1.9 A VGS=-10V,TA=25°C, RTHJA=70°C/W - -1.2 A VGS=-10V,TA=100°C, RTHJA=70°C/W - - -7.6 A TA=25°C EAS - - 257 mJ ID=-1.9A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 5.0 1.8 W TS=25°C TA=25°C,RTHJA=70°C/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID - ID,pulse Avalanche energy, single pulse Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Values Min. Typ. Max. Thermal resistance, junction - soldering RthJS point - - 25 °C/W - Device on PCB, 6 cm² cooling area1) - - 70 °C/W - RthJA 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP26DP06NMS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=-250µA -3 -4 V VDS=VGS,ID=-270µA - -0.1 -10 -1 -100 µA VDS=-60V,VGS=0V,Tj=25°C VDS=-60V,VGS=0V,Tj=125°C IGSS - -10 -100 nA VGS=-20V,VDS=0V Drain-source on-state resistance RDS(on) - 189 260 mΩ VGS=-10V,ID=-1.9A Gate resistance RG - 5 - Ω - Transconductance gfs - 3.1 - S |VDS|≥2|ID|RDS(on)max,ID=-1.9A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS -60 - Gate threshold voltage VGS(th) -2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 420 - pF VGS=0V,VDS=-30V,f=1MHz Output capacitance Coss - 62 - pF VGS=0V,VDS=-30V,f=1MHz Reverse transfer capacitance Crss - 18 - pF VGS=0V,VDS=-30V,f=1MHz Turn-on delay time td(on) - 5 - ns VDD=-30V,VGS=-10V,ID=-1.9A, RG,ext=1.6Ω Rise time tr - 7 - ns VDD=-30V,VGS=-10V,ID=-1.9A, RG,ext=1.6Ω Turn-off delay time td(off) - 15 - ns VDD=-30V,VGS=-10V,ID=-1.9A, RG,ext=1.6Ω Fall time tf - 5 - ns VDD=-30V,VGS=-10V,ID=-1.9A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - -1.9 - nC VDD=-30V,ID=-1.9A,VGS=0to-10V Gate charge at threshold Qg(th) - -1.2 - nC VDD=-30V,ID=-1.9A,VGS=0to-10V Gate to drain charge Qgd - -3.8 - nC VDD=-30V,ID=-1.9A,VGS=0to-10V Switching charge Qsw - -4.5 - nC VDD=-30V,ID=-1.9A,VGS=0to-10V Gate charge total Qg - -10.8 - nC VDD=-30V,ID=-1.9A,VGS=0to-10V Gate plateau voltage Vplateau - -4.6 - V VDD=-30V,ID=-1.9A,VGS=0to-10V Output charge Qoss - -5 - nC VDD=-30V,VGS=0V 1) See diagram ,Gate charge waveforms, for gate charge parameter definition Final Data Sheet 4 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP26DP06NMS Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition -1.5 A TA=25°C - -6 A TA=25°C - -0.81 -1.2 V VGS=0V,IF=-1.5A,Tj=25°C trr - 30 - ns VR=-30V,IF=-1.5A,diF/dt=-100A/µs Qrr - -58 - nC VR=-30V,IF=-1.5A,diF/dt=-100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP26DP06NMS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 2.0 2.00 1.75 1.5 1.50 -ID[A] Ptot[W] 1.25 1.0 1.00 0.75 0.5 0.50 0.25 0.0 0 20 40 60 80 100 120 140 0.00 160 0 20 40 60 TA[°C] 80 100 120 140 160 TA[°C] Ptot=f(TA) ID=f(TA);|VGS|≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 1 102 10 1 µs 100 µs 1 ms 0.5 100 10 ms 0.2 101 10-1 0.1 ZthJA[K/W] -ID[A] 100 ms DC 10-2 0.05 0.02 100 0.01 10-3 single pulse 10-4 10-1 100 101 102 10-1 10-5 10-4 10-3 -VDS[V] 10-1 100 101 tp[s] ID=f(VDS);TA=25°C;D=0;parameter:tp Final Data Sheet 10-2 ZthJA=f(tp);parameter:D=tp/T 6 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP26DP06NMS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 16 400 -5 V -4.5 V -10 V -8 V 14 -7 V 12 300 -6 V -6 V 8 6 4 -7 V -8 V -10 V 200 100 -5 V 2 0 RDS(on)[mΩ] -ID[A] 10 -4.5 V 0 1 2 3 4 0 5 0.0 0.5 1.0 1.5 -VDS[V] 2.0 2.5 3.0 3.5 4.0 -ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 8 600 7 500 6 400 150 °C RDS(on)[mΩ] -ID[A] 5 4 3 300 200 25 °C 2 150 °C 100 1 0 25 °C 0 1 2 3 4 5 6 7 -VGS[V] 5 6 7 8 9 10 -VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=-1.9A;parameter:Tj 7 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP26DP06NMS Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 3.6 1.6 1.2 -VGS(th)[V] RDS(on)(normalizedto25°C) 3.2 0.8 2.8 -2700 µA 2.4 0.4 -270 µA 0.0 -80 -40 0 40 80 120 2.0 -80 160 -40 0 Tj[°C] 40 80 120 160 Tj[°C] RDS(on)=f(Tj),ID=-1.9A,VGS=-10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 3 101 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss -IF[A] C[pF] 100 102 Coss 10-1 Crss 101 0 10 20 30 40 50 60 10-2 0.00 0.25 -VDS[V] 0.75 1.00 1.25 1.50 -VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP26DP06NMS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 1 10 10 -12 V -30 V -48 V 8 100 -VGS[V] -IAV[A] 6 25 °C 4 100 °C 2 10-1 101 102 125 °C 104 103 tAV[µs] 0 0 2 4 6 8 10 12 -Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=-1.9Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 68 66 -VBR(DSS)[V] 64 62 60 58 56 -80 -40 0 40 80 120 160 Tj[°C] VBR(DSS)=f(Tj);ID=-250µA Final Data Sheet 9 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP26DP06NMS 5PackageOutlines DOCUMENT NO. Z8B00180553 SCALE DIM A A1 A2 b b2 c D E E1 e e1 L N O MILLIMETERS MIN MAX 1.52 1.80 0.10 1,50 1.70 0.60 0.80 2.95 3.10 0.24 0.32 6.30 6.70 6.70 7.30 3.30 3.70 2.3 BASIC 4.6 BASIC 0.75 1.10 3 0 INCHES MIN 0.060 0.059 0.024 0.116 0.009 0.248 0.264 0.130 MAX 0.071 0.004 0.067 0.031 0.122 0.013 0.264 0.287 0.146 0.091 BASIC 0.181 BASIC 0.030 0.043 3 2.5 0 2.5 5mm EUROPEAN PROJECTION ISSUE DATE 24-02-2016 REVISION 01 Figure1OutlinePG-SOT223-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP26DP06NMS RevisionHistory ISP26DP06NMS Revision:2019-03-25,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-03-25 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2019-03-25