ISP75DP06LMXTSA1

ISP75DP06LM MOSFET OptiMOSTMSmallSignalTransistor,-60V SOT-223-4 Features 4 •P-Channel •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •LogicLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 1 2 3 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Pin 2, 4 Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 750 mΩ ID -1.1 A Type/OrderingCode Package ISP75DP06LM PG-SOT223 Final Data Sheet Gate Pin 1 Source Pin 3 Marking 75DP06LM 1 RelatedLinks - Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP75DP06LM TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP75DP06LM 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Values Min. Typ. Max. - - -1.1 Unit Note/TestCondition A VGS=-10V,TA=25°C, RTHJA=70°C/W ID - - -0.7 -1.0 -0.6 A VGS=-10V,TA=100°C, RTHJA=70°C/W VGS=-4.5V,TA=25°C, RTHJA=70°C/W VGS=-4.5V,TA=100°C, RTHJA=70°C/W ID,pulse - - -4.4 A TA=25°C Avalanche energy, single pulse EAS - - 36 mJ ID=-1.1A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 4.2 1.8 W TS=25°C TA=25°C,RTHJA=70°C/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Continuous drain current1) Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Values Min. Typ. Max. Thermal resistance, junction - soldering RthJS point - - 30 °C/W - Device on PCB, 6 cm² cooling area1) - - 70 °C/W - RthJA 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP75DP06LM 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=-250µA -1.5 -2 V VDS=VGS,ID=-77µA - -0.1 -10 -1 -100 µA VDS=-60V,VGS=0V,Tj=25°C VDS=-60V,VGS=0V,Tj=125°C IGSS - -10 -100 nA VGS=-20V,VDS=0V Drain-source on-state resistance RDS(on) - 621 748 750 1000 mΩ VGS=-10V,ID=-1.1A VGS=-4.5V,ID=-1A Gate resistance RG - 75 - Ω - Transconductance gfs - 1.8 - S |VDS|≥2|ID|RDS(on)max,ID=-1.1A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS -60 - Gate threshold voltage VGS(th) -1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 120 - pF VGS=0V,VDS=-30V,f=1MHz Output capacitance Coss - 19 - pF VGS=0V,VDS=-30V,f=1MHz Reverse transfer capacitance Crss - 5 - pF VGS=0V,VDS=-30V,f=1MHz Turn-on delay time td(on) - 3 - ns VDD=-30V,VGS=-10V,ID=-1.1A, RG,ext=1.6Ω Rise time tr - 5 - ns VDD=-30V,VGS=-10V,ID=-1.1A, RG,ext=1.6Ω Turn-off delay time td(off) - 40 - ns VDD=-30V,VGS=-10V,ID=-1.1A, RG,ext=1.6Ω Fall time tf - 14 - ns VDD=-30V,VGS=-10V,ID=-1.1A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - -0.4 - nC VDD=-30V,ID=-1.1A,VGS=0to-10V Gate charge at threshold Qg(th) - -0.2 - nC VDD=-30V,ID=-1.1A,VGS=0to-10V Gate to drain charge Qgd - -1.1 - nC VDD=-30V,ID=-1.1A,VGS=0to-10V Switching charge Qsw - -1.3 - nC VDD=-30V,ID=-1.1A,VGS=0to-10V Gate charge total Qg - -4.0 - nC VDD=-30V,ID=-1.1A,VGS=0to-10V Gate plateau voltage Vplateau - -3.4 - V VDD=-30V,ID=-1.1A,VGS=0to-10V Output charge Qoss - -1.3 - nC VDD=-30V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP75DP06LM Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition -1.1 A TA=25°C - -4.4 A TA=25°C - -0.9 -1.2 V VGS=0V,IF=-1.1A,Tj=25°C trr - 23 - ns VR=-30V,IF=-1.1A,diF/dt=-100A/µs Qrr - -27 - nC VR=-30V,IF=-1.1A,diF/dt=-100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP75DP06LM 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 2 1.2 1.0 -ID[A] Ptot[W] 0.8 1 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 0.0 160 0 20 40 60 TA[°C] 80 100 120 140 160 TA[°C] Ptot=f(TA) ID=f(TA);|VGS|≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 1 102 10 1 µs 0.5 100 µs 100 0.2 101 1 ms ZthJA[K/W] -ID[A] 0.1 100 ms 10 ms 10-1 0.05 0.02 DC 0.01 100 single pulse 10-2 10-3 10-1 100 101 102 10-1 10-5 10-4 10-3 -VDS[V] 10-1 100 101 tp[s] ID=f(VDS);TA=25°C;D=0;parameter:tp Final Data Sheet 10-2 ZthJA=f(tp);parameter:D=tp/T 6 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP75DP06LM Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 5 1500 -10 V -5 V 4 -4.5 V -ID[A] -4 V 2 RDS(on)[mΩ] 3 -2.8 V 1250 -3 V -3.5 V 1000 -4 V -4.5 V -3.5 V -5 V 750 1 -10 V -3 V -2.8 V 0 0 1 2 3 4 500 5 0.0 0.4 0.8 1.2 -VDS[V] 1.6 2.0 2.4 9 10 -ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 3 2000 25 °C 150 °C 1750 1500 2 150 °C -ID[A] RDS(on)[mΩ] 1250 1000 750 1 25 °C 500 250 0 1 2 3 4 5 -VGS[V] 4 5 6 7 8 -VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=-1.1A;parameter:Tj 7 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP75DP06LM Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.00 2.00 1.75 1.75 1.25 -VGS(th)[V] RDS(on)(normalizedto25°C) 1.50 1.00 1.50 0.75 -770 µA 0.50 1.25 0.25 0.00 -75 -50 -25 0 25 50 75 100 125 1.00 -75 150 -77 µA -50 -25 0 Tj[°C] 25 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj),ID=-1.1A,VGS=-10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 3 101 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 100 -IF[A] C[pF] 102 Coss 101 10-1 Crss 100 0 10 20 30 40 50 60 10-2 0.00 0.25 -VDS[V] 0.75 1.00 1.25 1.50 -VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP75DP06LM Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 1 10 10 -12 V -30 V -48 V 8 100 6 -VGS[V] -IAV[A] 25 °C 100 °C 4 -1 125 °C 10 2 10-2 100 101 102 103 tAV[µs] 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=-1.1Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 -VBR(DSS)[V] 65 60 55 -75 -50 -25 0 25 50 75 100 125 150 Tj[°C] VBR(DSS)=f(Tj);ID=-250µA Final Data Sheet 9 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP75DP06LM 5PackageOutlines Figure1OutlinePG-SOT223,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2019-03-25 OptiMOSTMSmallSignalTransistor,-60V ISP75DP06LM RevisionHistory ISP75DP06LM Revision:2019-03-25,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-03-25 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2019-03-25