ISP772TFUMA1

ISP772T Smart power high-side-switch for industrial applications Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown with restart ESD-protection Overvoltage protection (including load dump) Fast demagnetization of inductive loads Reverse battery protection with external resistor CMOS compatible input Loss of GND and loss of Vbb protection Very low standby current Green product (RoHS compliant) Potential applications • • • All types of resistive, inductive and capacitive loads µC compatible power switch for 12 V and 24 V DC industrial applications Replaces electromechanical relays and discrete circuits Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47/20/22. Description Table 1 Product summary Parameter Symbol Value Unit Overvoltage protection Vbb(AZ) 41 V Operating voltage Vbb(on) 5 to 34 V On-state resistance RON 60 mΩ Nominal load current IL(nom) 2.6 A Operating temperature Ta -30 to +85 °C N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated with embedded protective functions. Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com/industrial-profets Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Description Type Package Marking ISP772T PG-DSO-8 I772T Datasheet 2 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Table of contents Table of contents Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 3.1 3.2 General product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 4.1 4.2 4.3 4.4 Functional description and electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Typical performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Timing diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 3 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Block diagram 1 Block diagram Figure 1 Block diagram Datasheet 4 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Pin configuration 2 Pin configuration Figure 2 Pin configuration Pin Symbol Function 1 GND Logic ground 2 IN Input, activates the power switch in case of logic high signal 3 OUT Output to the load 4 NC not connected 5 Vbb Positive power supply voltage 6 Vbb Positive power supply voltage 7 Vbb Positive power supply voltage 8 Vbb Positive power supply voltage Datasheet 5 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications General product characteristics 3 General product characteristics 3.1 Absolute maximum ratings Table 2 Maximum ratings Tj = 25°C, unless otherwise specified Parameter Symbol Supply voltage Vbb Supply voltage for full short circuit protection Value Unit Note or condition 40 V – Vbb(SC) 36 V Tj = -40°C to +150°C Continuous input voltage VIN -10 to +16 V – Load current IL self limited A (short-circuit current, see p. 10) Current through input pin (DC) IIN ±5 mA – Junction temperature Tj 150 °C – Operating temperature Ta -30 to +85 °C – Storage temperature Tstg -40 to +105 °C – Power dissipation Ptot 1.5 W 1) Inductive load switch-off energy dissipation EAS 900 mJ 1) 2) single pulse, Load dump protection VLoaddump Tj = 150°C Vbb = 13.5 V, IL = 1.5 A (see page 9) V RL = 9 Ω kV OUT ±6 IN ±1 all other pins ±4 1 2 3 VLoadDump = VA + VS RI= 2 Ω, td = 400 ms, VIN = low or high, VA = 13.5 V 63 Electrostatic Discharge Voltage (Human VESD Body Model) 2) 3) according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) Device on 50 mm × 50 mm × 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 19) Not subject to production test, specified by design VLoadDump is set up without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in GND connection. A resistor for the protection of the input is integrated. Datasheet 6 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications General product characteristics 3.2 Thermal resistance Table 3 Thermal resistance Parameter Symbol Values Min. Thermal resistance Typ. Note or condition K/W – Max. Rth(JA) minimum footprint – 95 – 6 cm2 cooling area 4) – 70 83 4 Unit Device on 50 mm × 50 mm × 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 19) Datasheet 7 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Functional description and electrical characteristics 4 Functional description and electrical characteristics 4.1 Functional description Inductive and overvoltage output clamp Input circuit (ESD protection) The use of ESD zener diodes as voltage clamp at DC conditions is not recommended VON clamped to 47 V typ. Reverse battery protection Overvoltage protection of logic part RGND = 150 Ω, RI = 3.5 kΩ typ., temperature protection is not active during inverse current VZ1 = 6.1 V typ., VZ2 = Vbb(AZ) = 47 V typ., RI = 3.5 kΩ typ., RGND = 150 Ω Datasheet 8 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Functional description and electrical characteristics GND disconnect Vbb disconnect with charged inductive load GND disconnect with GND pull up Inductive load switch-off energy dissipation Energy stored in load inductance: EL =1/2 × L × IL2 While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL) × IL(t) dt with an approximate solution for RL > 0 Ω: EAS = Datasheet 9 IL × L 2 × RL × V bb + V OUT CL × ln 1 + IL × RL V OUT CL Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Functional description and electrical characteristics 4.2 Electrical characteristics Table 4 Electrical characteristics Tj = -40°C to +150°C, Vbb = 13.5 V, unless otherwise specified Parameter Symbol Values Min. Typ. Unit Note or condition mΩ – A 5)T Max. Load switching capabilities and characteristics On-state resistance RON – Tj = 25°C, IL = 2 A, Vbb = 9 V to 40 V 50 60 Tj = 150°C 95 120 3.1 – Nominal load current; Device on PCB IL(nom) 2.6 C = 85°C, Turn-on time to 90% VOUT ton – 90 180 µs RL = 47 Ω Turn-off time to 10% VOUT toff – 110 230 µs RL = 47 Ω Slew rate on 10% to 30% VOUT dV/dton – 0.7 1.5 V/µs RL = 47 Ω Slew rate off 70% to 40% VOUT -dV/dtoff – 0.7 1.5 V/µs RL = 47 Ω Operating voltage Vbb(on) 5 – 34 V – Undervoltage shutdown of charge pump Vbb(under) V – V – µA – Tj ≤ 150°C Operating parameters Tj = -40°C to +85°C – – 4 Tj = 150°C – – 5.5 – 4 5.5 Undervoltage restart of charge pump Vbb(u cp) Standby current Ibb(off) Tj = -40°C to +85°C, VIN = 0 V Tj = 150°C 6), V IN = 0 V – – 10 – – 15 Leakage output current IL(off) – – 5 µA included in Ibb(off), VIN = 0 V Operating current IGND – 0.8 1.5 mA VIN = 5 V A – Protection functions 7) Initial peak short circuit current limit (pin 5 to 3) IL(SCp) Tj = -40°C, Vbb = 20 V, tm = 150 µs – – 28 Tj = 25°C – 17 – Tj = 150°C 9 – – 5 6 7 Device on 50 mm × 50 mm × 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 19) Higher current due temperature sensor Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Datasheet 10 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Functional description and electrical characteristics Table 4 Electrical characteristics (continued) Tj = -40°C to +150°C, Vbb = 13.5 V, unless otherwise specified Parameter Symbol Values Min. Typ. Unit Note or condition Max. Repetitive short circuit current limit IL(SCr) - 12 - A Tj = Tjt (see Timing diagrams) Output clamp (inductive load switch off) VON(CL) 41 47 – V VOUT = Vbb VON(CL), Ibb = 4 mA Overvoltage protection Vbb(AZ) 41 – – V 8), Thermal overload trip temperature Tjt 150 – – °C – Thermal hysteresis ΔTjt – 10 – K – Reverse battery -Vbb – – 32 V 9) Drain-source diode voltage -VON – 600 – mV VOUT > Vbb Tj = 150°C Input turn-on threshold voltage VIN(T+) – – 2.2 V (see page 15) Input turn-off threshold voltage VIN(T-) 0.8 – – V (see page 15) Input threshold hysteresis ΔVIN(T) – 0.3 – V – Off state input current IIN(off) 1 – 25 µA VIN = 0.7 V (see page 15) On state input current IIN(on) 3 – 25 µA VIN = 5 V (see page 15) Input resistance RI 1.5 3.5 5 kΩ (see page 8) Ibb = 4 mA Reverse battery Input 8 9 See also VON(CL) in circuit diagram on page 8 Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input current has to be limited (see Absolute maximum ratings on page 6). Datasheet 11 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Functional description and electrical characteristics 4.3 Typical performance characteristics Typ. transient thermal impedance ZthJA = f(tp) @ 6 cm2 heatsink area Parameter: D = tp/T Typ. transient thermal impedance ZthJA = f(tp) @ minimum footprint Parameter: D = tp/T Typ. on-state resistance RON = f(Tj) Vbb = 13.5 V; VIN = high Typ. on-state resistance RON = f(Vbb) IL = 0.5 A; VIN = high Datasheet 12 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Functional description and electrical characteristics Typ. turn-on time ton = f(Tj) RL = 47 Ω Typ. turn-off time toff = f(Tj) RL = 47 Ω Typ. slew rate on dV/dton = f(Tj) RL = 47 Ω Typ. slew rate off dV/dtoff = f(Tj) RL = 47 Ω Datasheet 13 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Functional description and electrical characteristics Typ. standby current Ibb(off) = f(Tj) Vbb = 32 V; VIN = low Typ. leakage current IL(off) = f(Tj) Vbb = 32 V; VIN = low Typ. initial peak short circuit current limit IL(SCp) = f(Tj) Vbb = 20 V Typ. initial short circuit shutdown time toff(SC) = f(Tj, start) Vbb = 20 V Datasheet 14 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Functional description and electrical characteristics Typ. input current IIN(on/off) = f(Tj) Vbb = 13.5 V; VIN = low/high; VINlow ≤ 0.7 V; VINhigh = 5 V Typ. input current IIN = f(VIN) Vbb = 13.5 V Typ. input threshold voltage VIN(th) = f(Tj) Vbb = 13.5 V Typ. input threshold voltage VIN(th) = f(Vbb) Tj = 25°C Datasheet 15 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Functional description and electrical characteristics Maximum allowable load inductance for a single switch off L = f(IL) Tjstart = 150°C, Vbb = 13.5 V, RL = 0 Ω Datasheet Maximum allowable inductive switch off energy, single pulse EAS = f(IL) Tjstart = 150°C, Vbb = 13.5 V 16 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Functional description and electrical characteristics 4.4 Timing diagrams Vbb turn on Switching a lamp Switching a resistive load, turn-on/off time and slew rate definition Switching an inductive load Datasheet 17 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Functional description and electrical characteristics Turn on into short circuit, shut down by overtemperature, restart by cooling Undervoltage restart of charge pump Heating up of the chip may require several milliseconds, depending on external conditions. Overtemperature: Reset if Tj < Tjt Datasheet 18 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Package information 1.75 MAX. 0.35 x 45° 1) 0.0 4-0.2 +0.06 0.64±0.25 6±0.2 SEATING PLANE 2) +0.10 8° M AX. 1) 0.0 5-0.2 0.19-0.00 0.175±0.07 Package information (1.45) 5 0.41-0.06 8 5 1 4 1.27 INDEX MARKING 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Lead width can be 0.61 max. in dambar area All dimensions are in units mm The drawing is in compliance with ISO 128-30, Projection Method 1 [ Figure 3 ] PG-DSO-8 Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Information on alternative packages Please visit www.infineon.com/packages. Datasheet 19 Rev. 1.2 2019-07-25 ISP772T Smart power high-side-switch for industrial applications Revision history 6 Revision history Document version Date of release Description of changes 1.2 2019-07-25 Datasheet updated: • ESD ratings for HBM updated according to ANSI/ESDA/JEDEC JS-001 • Figures updated in chapter 4 (functional description) • Editorial changes 1.1 2008-09-29 All pages: • Added new Infineon logo • Initial version of RoHS-compliant derivate of the ISP772T Page 1 and 17: • Added RoHS compliance statement and Green product feature • Package changed to RoHS compliant version Page 18: Added Revision history Page 19: Update of disclaimer Datasheet 20 Rev. 1.2 2019-07-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-07-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-Z8F64610018 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury