IST007N04NM6AUMA1

IST007N04NM6 MOSFET OptiMOSTM6Power-Transistor,40V sTOLL Features 6, Tab •Optimizedforlowvoltagemotordrivesapplication •Optimizedforbatterypowerapplications •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalperformance •N-channel •Pb-freeleadplating:RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •175°Crated 1 2 3 4 5 Productvalidation Drain Pin 6, Tab FullyqualifiedaccordingtoJEDECforIndustrialApplications Gate Pin 5 Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 0.7 mΩ ID 440 A Qoss 122 nC QG(0V..10V) 114 nC *1 *1: Internal body diode Type/OrderingCode Package Marking RelatedLinks IST007N04NM6 sTOLL 7N04N6 - Final Data Sheet 1 Source Pin 1-4 Rev.2.0,2020-06-18 OptiMOSTM6Power-Transistor,40V IST007N04NM6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2020-06-18 OptiMOSTM6Power-Transistor,40V IST007N04NM6 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 440 311 54 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C, RTHJA=40°C/W2) - 1760 A TC=25°C - - 400 mJ ID=125A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 250 3.8 W TC=25°C TA=25°C,RTHJA=40°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 0.6 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area2) - - 40 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2020-06-18 OptiMOSTM6Power-Transistor,40V IST007N04NM6 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 3.3 V VDS=VGS,ID=250µA - - 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.5 0.7 0.7 - mΩ VGS=10V,ID=100A VGS=6V,ID=50A Gate resistance RG - 0.9 - Ω - Transconductance gfs - 320 - S |VDS|≥2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 7900 - pF VGS=0V,VDS=20V,f=1MHz Output capacitance Coss - 3200 - pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 150 - pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 23 - ns VDD=20V,VGS=10V,ID=100A, RG,ext=2.7Ω Rise time tr - 23 - ns VDD=20V,VGS=10V,ID=100A, RG,ext=2.7Ω Turn-off delay time td(off) - 48 - ns VDD=20V,VGS=10V,ID=100A, RG,ext=2.7Ω Fall time tf - 14 - ns VDD=20V,VGS=10V,ID=100A, RG,ext=2.7Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 32 - nC VDD=20V,ID=100A,VGS=0to10V Gate charge at threshold Qg(th) - 18 - nC VDD=20V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 20 - nC VDD=20V,ID=100A,VGS=0to10V Switching charge Qsw - 33 - nC VDD=20V,ID=100A,VGS=0to10V Gate charge total Qg - 114 152 nC VDD=20V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4 - V VDD=20V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 94 - - VDS=0.1V,VGS=0to10V Output charge Qoss - 122 - - VDS=20V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2020-06-18 OptiMOSTM6Power-Transistor,40V IST007N04NM6 Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 250 A TC=25°C - 1760 A TC=25°C - 0.83 1 V VGS=0V,IF=100A,Tj=25°C trr - 61 - ns VR=20V,IF=100A,diF/dt=100A/µs Qrr - 90 - nC VR=20V,IF=100A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.0,2020-06-18 OptiMOSTM6Power-Transistor,40V IST007N04NM6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 280 500 240 400 300 160 ID[A] Ptot[W] 200 120 200 80 100 40 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 103 10 µs 100 100 µs 101 1 ms ID[A] 102 ZthJC[K/W] 10 ms 10-1 DC 100 10-1 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2020-06-18 OptiMOSTM6Power-Transistor,40V IST007N04NM6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1760 2.4 10 V 1600 2.2 7V 2.0 6V 1280 1.8 1120 1.6 960 RDS(on)[mΩ] ID[A] 1440 5.5 V 800 640 4.5 V 1.4 1.2 5V 1.0 5V 480 320 7V 0.6 4.5 V 10 V 160 0 5.5 V 0.8 0.4 4V 0.0 0.5 1.0 1.5 2.0 2.5 0.2 3.0 0 40 80 120 160 200 240 280 320 360 400 440 VDS[V] ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1760 2.4 1600 2.2 1440 2.0 1.8 1280 1.6 RDS(on)[mΩ] ID[A] 1120 960 800 640 1.2 1.0 175 °C 0.8 480 0.6 25 °C 320 0.4 160 0 1.4 2.0 3.0 0.2 25 °C 175 °C 4.0 5.0 6.0 7.0 VGS[V] 2 4 6 8 10 12 14 16 18 20 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.0 RDS(on)=f(VGS),ID=100A;parameter:Tj 7 Rev.2.0,2020-06-18 OptiMOSTM6Power-Transistor,40V IST007N04NM6 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 3.2 2.8 1.6 2.4 2500 µA 1.4 VGS(th)[V] RDS(on)(normalizedto25°C) 1.8 1.2 2.0 250 µA 1.6 1.0 1.2 0.8 0.8 0.6 0.4 -80 -40 0 40 80 120 160 0.4 -80 200 -40 0 40 Tj[°C] 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=100A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 104 10 25 °C 25 °C, max 175 °C 175 °C, max 104 103 Ciss IF[A] C[pF] Coss 103 102 102 101 Crss 101 0 5 10 15 20 25 30 35 40 100 0.0 0.4 VDS[V] 1.2 1.6 2.0 2.4 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.8 IF=f(VSD);parameter:Tj 8 Rev.2.0,2020-06-18 OptiMOSTM6Power-Transistor,40V IST007N04NM6 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 8V 20 V 32 V 8 102 6 VGS[V] IAV[A] 25 °C 100 °C 4 1 10 150 °C 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 120 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=100Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 44 43 VBR(DSS)[V] 42 41 40 39 38 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2020-06-18 OptiMOSTM6Power-Transistor,40V IST007N04NM6 5PackageOutlines DIMENSION A A1 b b1 D D1 D2 D3 D4 D5 D6 E E1 E2 E3 E4 E5 E6 E7 E8 e e1 L L1 L2 P Q W MILLIMETERS MIN. MAX. 2.20 2.40 0.40 0.60 0.70 0.90 0.42 0.50 6.80 7.20 6.80 7.00 1.10 1.30 1.55 1.75 6.56 5.96 5.60 6.50 6.90 7.80 8.20 0.60 0.80 0.50 0.70 2.43 2.30 5.20 2.57 2.50 1.60 1.30 1.05 1.25 0.80 1.00 0.13 0.33 1.40 1.60 0.00 0.10 8.50° 11.50° DOCUMENT NO. Z8B000195632 REVISION 01 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 11.06.2019 Figure1OutlinesTOLL,dimensionsinmm Final Data Sheet 10 Rev.2.0,2020-06-18 OptiMOSTM6Power-Transistor,40V IST007N04NM6 RevisionHistory IST007N04NM6 Revision:2020-06-18,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 1.0 2020-04-27 Release of preliminary version 2.0 2020-06-18 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2020-06-18