IST011N06NM5

IST011N06NM5 MOSFET OptiMOSTM5Power-Transistor,60V sTOLL Features 6, Tab •Optimizedforlowvoltagemotordrivesapplication •Optimizedforbatterypoweredapplications •Enablesautomatedopticalsolderinspection •100%avalanchetested •N-channel •175°Crated •Pb-freeleadplating:RoHScompliant 1 2 3 4 5 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Pin 6, Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V Gate Pin 5 *1 Source Pin 1-4 *1: Internal body diode RDS(on),max 1.1 mΩ ID 399 A Qoss 123 nC QG(0V..10V) 110 nC Type/OrderingCode Package IST011N06NM5 sTOLL Final Data Sheet 1 Marking RelatedLinks 011N06N5 - Rev.2.1,2022-01-15 OptiMOSTM5Power-Transistor,60V IST011N06NM5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2022-01-15 OptiMOSTM5Power-Transistor,60V IST011N06NM5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 399 282 38 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C, RTHJA=40°C/W2) - 1596 A TC=25°C - - 461 mJ ID=100A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 313 3.8 W TC=25°C TA=25°C,RTHJA=40°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Device on PCB, 6 cm² cooling area Values Min. Typ. Max. RthJC - 0.3 0.48 °C/W - RthJA - - 40 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2022-01-15 OptiMOSTM5Power-Transistor,60V IST011N06NM5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 3.3 V VDS=VGS,ID=148µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.9 1.27 1.1 1.8 mΩ VGS=10V,ID=100A VGS=6V,ID=50A Gate resistance1) RG - 0.9 - Ω - Transconductance gfs 165 250 - S |VDS|≥2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 8100 - pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 1900 - pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 71 - pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 26 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.6Ω Rise time tr - 35 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.6Ω Turn-off delay time td(off) - 47 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.6Ω Fall time tf - 12 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 36 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge at threshold Qg(th) - 22 - nC VDD=30V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 20 - nC VDD=30V,ID=100A,VGS=0to10V Switching charge Qsw - 33 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge total Qg - 110 154 nC VDD=30V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=30V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 97 - - VDS=0.1V,VGS=0to10V Output charge Qoss - 123 - - VDS=30V,VGS=0V 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2022-01-15 OptiMOSTM5Power-Transistor,60V IST011N06NM5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 245 A TC=25°C - 1596 A TC=25°C - 0.9 1.1 V VGS=0V,IF=100A,Tj=25°C trr - 61 - ns VR=30V,IF=100A,diF/dt=100A/µs Qrr - 93 - nC VR=30V,IF=100A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.1,2022-01-15 OptiMOSTM5Power-Transistor,60V IST011N06NM5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 350 450 400 300 350 250 200 ID[A] Ptot[W] 300 150 250 200 150 100 100 50 0 50 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 3 10 10 µs 100 102 ZthJC[K/W] ID[A] 100 µs 1 ms 101 10 ms 10-1 DC 0 10 10-1 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2022-01-15 OptiMOSTM5Power-Transistor,60V IST011N06NM5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1600 3.6 4.5 V 5V 6V 7V 8V 10 V 1400 1200 4.5 V 3.2 2.8 2.4 RDS(on)[mΩ] ID[A] 1000 800 600 5V 2.0 1.6 6V 400 1.2 7V 8V 200 0 10 V 0.8 0 1 2 3 4 0.4 5 0 100 200 VDS[V] 300 400 16 20 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1600 3.6 25 °C 1400 3.2 1200 2.8 175 °C 2.4 RDS(on)[mΩ] ID[A] 1000 800 600 2.0 400 1.2 200 0.8 0 0 2 4 6 8 VGS[V] 0.4 25 °C 4 8 12 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 175 °C 1.6 RDS(on)=f(VGS),ID=100A;parameter:Tj 7 Rev.2.1,2022-01-15 OptiMOSTM5Power-Transistor,60V IST011N06NM5 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 3.5 3.0 1480 µA 2.5 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 1.2 2.0 148 µA 0.8 1.5 0.4 -75 -50 -25 0 25 50 75 1.0 -75 100 125 150 175 200 -50 -25 0 Tj[°C] 25 50 75 100 125 150 175 200 Tj[°C] RDS(on)=f(Tj),ID=100A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 104 10 25 °C 175 °C Ciss Coss 3 103 IF[A] C[pF] 10 102 102 Crss 101 0 10 20 30 40 50 60 101 0.4 0.6 VDS[V] 1.0 1.2 1.4 1.6 1.8 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.8 IF=f(VSD);parameter:Tj 8 Rev.2.1,2022-01-15 OptiMOSTM5Power-Transistor,60V IST011N06NM5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 12 V 30 V 48 V 8 102 6 VGS[V] IAV[A] 25 °C 100 °C 4 125 °C 1 10 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 120 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=100Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 65 64 63 VBR(DSS)[V] 62 61 60 59 58 57 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2022-01-15 OptiMOSTM5Power-Transistor,60V IST011N06NM5 5PackageOutlines PACKAGE - GROUP NUMBER: PG-HSOF-5-U01 REVISION: 02 DATE: 06.05.2021 MILLIMETERS MIN. MAX. 2.20 2.40 0.40 0.60 0.70 0.90 0.42 0.50 6.80 7.20 6.80 7.00 1.10 1.30 1.55 1.75 6.56 5.96 5.60 6.50 6.90 7.80 8.20 0.60 0.80 0.50 0.70 2.43 2.30 5.20 2.57 2.50 1.60 1.30 1.05 1.25 0.80 1.00 0.13 0.33 1.40 1.60 0.00 0.10 8.50° 11.50° DIMENSIONS A A1 b b1 D D1 D2 D3 D4 D5 D6 E E1 E2 E3 E4 E5 E6 E7 E8 e e1 L L1 L2 P Q W Figure1OutlinesTOLL,dimensionsinmm Final Data Sheet 10 Rev.2.1,2022-01-15 OptiMOSTM5Power-Transistor,60V IST011N06NM5 RevisionHistory IST011N06NM5 Revision:2022-01-15,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-11-23 Release of final version 2.1 2022-01-15 Update Part Marking Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2022-01-15 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: IST011N06NM5AUMA1