ISZ040N03L5ISATMA1

ISZ040N03L5IS MOSFET OptiMOSTMPower-MOSFET,30V TSDSON-8FL (enlarged source interconnection) Features •OptimizedSyncFETforhighperformancebuckconverter •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters S1 8D S2 7D Parameter Value Unit S3 6D VDS 30 V G4 5D RDS(on),max 4.0 mΩ ID 40 A QOSS 12 nC QG(0V..10V) 17 nC Type/OrderingCode Package Marking RelatedLinks ISZ040N03L5IS PG-TSDSON-8 FL 40N03LI - Final Data Sheet 1 Rev.2.0,2020-03-16 OptiMOSTMPower-MOSFET,30V ISZ040N03L5IS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2020-03-16 OptiMOSTMPower-MOSFET,30V ISZ040N03L5IS 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 40 40 40 40 18 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W1) - 160 A TC=25°C - - 20 A TC=25°C EAS - - 20 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 37 2.1 W TC=25°C TA=25°C,RthJA=60K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 3.4 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 60 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.0,2020-03-16 OptiMOSTMPower-MOSFET,30V ISZ040N03L5IS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=10mA 15 - mV/K ID=10mA,referencedto25°C 1.2 - 2 V VDS=VGS,ID=250µA IDSS - 1 0.5 - mA VDS=24V,VGS=0V VDS=24V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 4.6 3.3 5.7 4.0 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG - 0.9 - Ω - Transconductance gfs 41 82 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. 30 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1100 - pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 460 - pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 64 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 3.3 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 4.4 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 16 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 3.0 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 2.9 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 1.7 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 2.9 - nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 4.1 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 8.5 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.7 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 17 - nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 6.8 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 12 - nC VDD=15V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2020-03-16 OptiMOSTMPower-MOSFET,30V ISZ040N03L5IS Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 37 A TC=25°C - 160 A TC=25°C - 0.56 0.7 V VGS=0V,IF=3A,Tj=25°C - 2 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.0,2020-03-16 OptiMOSTMPower-MOSFET,30V ISZ040N03L5IS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 40 50 40 30 ID[A] Ptot[W] 30 20 20 10 10 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 102 0.5 10 µs 100 0.2 10 ZthJC[K/W] ID[A] 100 µs 1 1 ms 10 ms DC 0.1 0.05 0.02 10-1 0.01 100 10-1 10-1 single pulse 100 101 102 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2020-03-16 OptiMOSTMPower-MOSFET,30V ISZ040N03L5IS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 10 10 V 5V 140 4.5 V 8 120 3.2 V RDS(on)[mΩ] ID[A] 100 80 3.2 V 60 6 3.5 V 4V 4.5 V 4 5V 7V 8V 3V 10 V 40 2 2.8 V 20 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 200 140 160 120 120 gfs[S] ID[A] 100 80 80 60 40 40 150 °C 20 25 °C 0 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.0,2020-03-16 OptiMOSTMPower-MOSFET,30V ISZ040N03L5IS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 6 2.5 5 2.0 4 1.5 VGS(th)[V] RDS(on)[mΩ] typ 3 1.0 2 0.5 1 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=10mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55 °C 25 °C 125 °C 150 °C 102 Ciss 103 IF[A] C[pF] Coss 101 102 Crss 100 101 0 10 20 30 10-1 0.0 0.2 VDS[V] 0.6 0.8 1.0 1.2 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 8 Rev.2.0,2020-03-16 OptiMOSTMPower-MOSFET,30V ISZ040N03L5IS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 15 V 10 6V 24 V 25 °C 101 8 VGS[V] 100 °C IAV[A] 125 °C 100 6 4 2 10-1 100 101 102 103 tAV[µs] 0 0 5 10 15 20 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Diagram Gate charge waveforms -2 10 10-3 125 °C 10-4 IDSS[A] 100 °C 75 °C 10-5 10-6 25 °C 10-7 0 5 10 15 20 25 VDS[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 9 Rev.2.0,2020-03-16 OptiMOSTMPower-MOSFET,30V ISZ040N03L5IS 5PackageOutlines j m DOCUMENT NO. Z8B00158553 DIMENSIONS A A1 b c D D1 D2 E E1 E2 e L L1 L2 aaa MILLIMETERS MIN. MAX. 0.90 1.10 0 0.05 0.24 0.44 (0.20) 3.20 3.40 2.19 2.39 1.54 1.74 3.20 3.40 2.01 2.21 0.10 0.30 0.65 0.30 0.50 0.40 0.70 0.50 0.70 0.06 REVISION 03 SCALE 10:1 0 2 mm 1 EUROPEAN PROJECTION ISSUE DATE 04.03.2020 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2020-03-16 OptiMOSTMPower-MOSFET,30V ISZ040N03L5IS RevisionHistory ISZ040N03L5IS Revision:2020-03-16,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-03-16 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2020-03-16