ITS4200S-ME-P

ITS4200S-ME-P Smart High-Side NMOS-Power Switch Data Sheet Rev 1.0, 2012-09-01 Standard Power Smart High-Side NMOS-Power Switch 1 ITS4200S-ME-P Overview Features • • • • • • • • • • • • • • CMOS compatible input Switching all types of resistive, inductive and capacitive loads Fast demagnetization of inductive loads Very low standby current Optimized Electromagnetic Compatibility (EMC) Overload protection Current limitation Short circuit protection Thermal shutdown with restart Overvoltage protection (including load dump) Reverse battery protection with external resistor Loss of GND and loss of Vbb protection Electrostatic Discharge Protection (ESD) Green Product (RoHS compliant) SOT-223-4 ITS4200S-ME-P is not qualified and manufactured according to the requirements of Infineon Technologies with regards to automotive and/or transportation applications. Description The ITS4200S-ME-P is a protected single channel Smart High-Side NMOS-Power Switch in a SOT-223-4 package with charge pump and CMOS compatible input. The device is monolithically integrated in Smart technology. Product Summary Overvoltage protection VSAZmin= 47V Operating voltage range: 11V < VS< 45V On-state resistance RDSON = typ 150mΩ Nominal load current ILNOM= 1.4A Operating Temperature range: Tj = -40°C to 125°C Standby Current: ISSTB = 50µA Application • • • • All types of resistive, inductive and capacitive loads Power switch for 12V and 24V DC applications with CMOS compatible control interface Driver for electromagnetic relays Power managment for high-side-switching with low current consumption in OFF-mode Type Package Marking ITS4200S-ME-P SOT-223-4 I200SP Data Sheet 2 Rev 1.0, 2012-09-01 ITS4200S-ME-P Block Diagram and Terms 2 Block Diagram and Terms ITS4200S-ME-P VS 4 Bias Supervision IN Overvoltage Protection Current Limiter Logic Gate Control Circuit 3 ESD Protection Temperature Sensor OUT 1 2 GND Figure 1 Block diagram Voltage- and Current-Definitions: Switching Times and Slew Rate Definitions: VIN H ITS4200S-ME-P 4 Bias Supervision Overvoltage Protection L VS IS VOUT t +VS Current Limiter VDS 90% IN I IN 3 V FD S 70% Gate Control Circuit Logic ESD Protection SROFF 40% 30% SRON 10% IOUT IL V ST GND RL V O UT 2 0 tON t tOFF IL V IN 1 OUT VS Temperature Sensor 0 OFF ON OFF t GND Figure 2 Data Sheet Terms - parameter definition 3 Rev 1.0, 2012-09-01 ITS4200S-ME-P Pin Configuration 3 Pin Configuration 3.1 Pin Assignment 4 1 2 Figure 3 Pin configuration top view, SOT-223-4 3.2 Pin Definitions and Functions 3 Pin Symbol Function 1 OUT Output to the load 2 GND Logic ground 3 IN Input, controles the power switch; the powerswitch is ON when high 4 VS Supply voltage (design the wiring for the maximum short circuit current and also for low thermal resistance) Data Sheet 4 Rev 1.0, 2012-09-01 ITS4200S-ME-P General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Table 1 Absolute maximum ratings2) at Tj = 25°C unless otherwise specified. Currents flowing into the device unless otherwise specified in chapter “Block Diagram and Terms” Parameter Symbol Values Min. Typ. Unit Max. Note / Number Test Condit ion Supply voltage VS Voltage VS 48 V 4.1.1 A 4.1.2 Ground Current IGND Reverse Ground Current IGND - 0.5 IOUT -1 self A limited 4.1.3 VIN IIN -10 VS V 4.1.4 -5 5 mA 4.1.5 Tj Tstg -40 125 °C 4.1.6 -55 125 °C 4.1.7 1.4 W 4.1.8 160 mJ single pulse 4.1.9 1 kV HBM3) 4.1.10 kV 3) 4.1.11 Output stage OUT Output Current; (Short circuit current see electrical characteristics) Input IN Voltage Current Temperatures Junction Temperature Storage Temperature Power dissipation Ta = 25 °C1) P tot Inductive load switch-off energy dissipation Tj = 125 °C; VS=13.5V; IL= 1.0A2) EAS ESD Susceptibility ESD susceptibility (input pin) ESD susceptibility (all other pins) VESD VESD -1 -5 5 HBM 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70mm thick) copper area for Vbb connection. PCB is vertical without blown air 2) Not subject to production test, specified by design 3) ESD susceptibility HBM according to EIA/JESD 22-A 114. Note: Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” the normal operating range. Protection functions are neither designed for continuous nor repetitive operation. Data Sheet 5 Rev 1.0, 2012-09-01 ITS4200S-ME-P General Product Characteristics 4.2 Functional Range Table 2 Funtional Range Parameter Symbol Nominal Operating Voltage VS VIN Values Min. Continuous Input Voltage Typ. Unit Note / Test Condition Number VS increasing 4.2.1 Max. 11 45 V -3 VS V 4.2.2 Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.3 Thermal Resistance This thermal data was generated in accordance to JEDEC JESD51 standards. More information on www.jedec.org Table 3 Thermal Resistance1) Parameter Symbol Values Min. Typ. Unit Max. Note / Test Condition Number Thermal Resistance - Junction to pin5 Rthj-pin5 41.8 K/W Thermal Resistance - Junction to Ambient - 1s0p, minimal footprint RthJA_1s0p 155.5 K/W 2) 4.3.2 Thermal Resistance - Junction to Ambient - 1s0p, 300mm2 RthJA_1s0p_300mm 76.1 K/W 3) 4.3.3 Thermal Resistance - Junction to Ambient - 1s0p, 600mm2 RthJA_1s0p_600mm 67.1 K/W 4) 4.3.4 Thermal Resistance - Junction to Ambient - 2s2p RthJA_2s2p 93.6 K/W 5) 4.3.5 Thermal Resistance - Junction to Ambient with thermal vias - 2s2p RthJA_2s2p 50.0 K/W 6) 4.3.6 4.3.1 1) Not subject to production test, specified by design 2) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board, footprint; the Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70µm Cu. 3) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board, Cu, 300mm2; the Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70µm Cu. 4) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board, 600mm2; the Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70µm Cu. 5) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; the Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu). 6) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board with two thermal vias; the Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu. The diameter of the two vias are equal 0.3mm and have a plating of 25um with a copper heatsink area of 3mm x 2mm). JEDEC51-7: The two plated-through hole vias should have a solder land of no less than 1.25 mm diameter with a drill hole of no less than 0.85 mm diameter. Data Sheet 6 Rev 1.0, 2012-09-01 ITS4200S-ME-P Electrical Characteristics 5 Electrical Characteristics Table 4 VS = 15V to 30V; Tj = -40°C to 125°C; all voltages with respect to ground. Currents flowing into the device unless otherwise specified in chapter “Block Diagram and Terms”. Typical values at VS = 13.5V, Tj = 25°C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Number 5.0.1 5.0.3 Powerstage NMOS ON Resistance RDSON – 150 200 mΩ NMOS ON Resistance RDSON – 270 320 mΩ Nominal Load Current; device on PCB 1) ILNOM 1.4 – – A IOUT= 0.5A; Tj = 25°C; VIN= 5V IOUT= 0.5A; Tj = 125°C; VIN= 5V Tpin5 = 85°C 5.0.2 Timings of Power Stages2) Turn ON Time(to 90% of Vout); L to H transition of VIN tON 50 100 µs VS=15V; RL = 47Ω 5.0.4 Turn OFF Time (to 10% of Vout); H to L transition of VIN tOFF 75 150 µs VS=15V; RL = 47Ω 5.0.5 ON-Slew Rate (10 to 30% of Vout); L to H transition of VIN SRON 1 2 V / µs VS=13.5V; RL = 47Ω 5.0.6 OFF-Slew Rate; dVOUT / dtON(70 to 40% of Vout); H to L transition of VIN SROFF 1 2 V / µs VS=13.5V; RL = 47Ω 5.0.7 10.5 V VS decreasing 5.0.8 11 V VS increasing 5.0.9 1.0 1.6 mA 5.0.10 10 25 µA 50 µA 10 µA VIN= 5V VIN= 0V; VOUT= 0V -40°C < Tj < 85°C VIN= 0V; VOUT= 0V Tj = 125°C VIN= 0V; VOUT= 0V 4.5 A Under voltage lockout (charge pump start-stop-restart) Supply undervoltage; charge pump stop voltage VSUV Supply startup voltage; Charge pump restart voltage VSSU 7.0 Current consumption Standby current IGND ISSTB Standby current ISSTB Operating current Output leakage current Protection functions IOUTLK 3.5 5.0.11 5.0.12 5.0.13 3) Initial peak short circuit current limit ILSCP Initial peak short circuit current limit ILSCP 3.0 Data Sheet 7 A Tj = -40°C; VS = 20V; 5.0.14 VIN = 5.0V; tm =150µs Tj = 25°C; VS = 20V; 5.0.15 VIN = 5.0V; tm =150µs Rev 1.0, 2012-09-01 ITS4200S-ME-P Electrical Characteristics Table 4 VS = 15V to 30V; Tj = -40°C to 125°C; all voltages with respect to ground. Currents flowing into the device unless otherwise specified in chapter “Block Diagram and Terms”. Typical values at VS = 13.5V, Tj = 25°C Parameter Symbol Values Min. Initial peak short circuit current limit ILSCP Number A 5.0.16 2.2 A Tj =125°C; VS = 20V ;VIN = 5.0V; tm =150µs VIN = 5.0V 68 V IS = 4mA 5.0.18 47 V IS = 4mA 5.0.19 135 °C 5.0.20 K 5.0.21 V 5.0.22 ILSCR Output clamp at VOUT = VS - VDSCL (inductive load switch off) VDSCL 62 Overvoltage protection VSAZ Thermal overload trip temperature TjTrip Thermal hysteresis THYS Reverse Battery Note / Test Condition Max. 1.4 Repetitive short circuit current limit Tj = TjTrip ; see timing diagrams VOUT = VS - VONCL Typ. Unit 10 5.0.17 4) Continuous reverse battery voltage VSREV - 45 Forward voltage of the drain-source VFDS reverse diode 0.6 1.2 V IFDS = 1A; VIN= 0V; Tj = 125°C 5.0.23 Input interface; pin IN Input turn-ON threshold voltage Input turn-OFF threshold voltage Input threshold hysteresis Off state input current On state input current Input resistance Input Switch ON Delay Time VINON VINOFF VINHYS IINOFF IINON RIN tdON 3.0 1.8 0.2 20 V 5.0.24 V 5.0.25 V 5.0.26 µA 1 1.5 3.5 150 350 VIN < 1.8V VIN = VS < 15V 5.0.27 110 µA 5.0.28 5.0 kΩ 5.0.29 µs 5.0.30 1) Device on 50mm x 50mm x 1,5mm epoxy FR4 PCB with 6cm² (one layer copper 70um thick) copper area for supply voltage connection. PCB in vertical position without blown air. 2) Timing values only with high slewrate input signal; otherwise slower. 3) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4) Requires a 150W resistor in GND connection. The reverse load current trough the intrinsic drain-source diode of the powerMOS has to be limited by the connected load. Power dissipation is higher compared to normal operation due to the votage drop across the drain-source diode. The temperature protection is not functional during reverse current operation! Input current has to be limited (see max ratings). Data Sheet 8 Rev 1.0, 2012-09-01 ITS4200S-ME-P Typical Performance Graphs 6 Typical Performance Graphs Typical Characterisitics Transient Thermal Impedance ZthJA versus Pulse Time tp @ 6cm² heatsink area Transient Thermal Impedance ZthJA versus Pulse Time tp @ min footprint D = tp / T D = tp / T On-Resistance RDSONversus Supply Voltage VS 300 300 250 250 200 200 RDSON [mΩ] RDSON [mΩ] On-Resistance RDSONversus Junction Temperature Tj 150 150 100 100 50 50 Tj=−40°C;IL=0.5A Tj=25°C;IL=0.5A Vs=15V 0 −40 −25 Data Sheet 0 Tj=125°C;IL=0.5A 25 50 Tj [°C] 75 100 0 125 9 10 15 20 25 30 Vs[V] 35 40 45 Rev 1.0, 2012-09-01 ITS4200S-ME-P Typical Performance Graphs Typical Characterisitics Switch ON Time tON versus Junction Temperature Tj Switch OFF Time tOFFversus Junction Temperature Tj 100 120 90 100 80 70 80 tOFF [μs] tON [μs] 60 50 60 40 40 30 20 20 Vs=15V;RL=47Ω 10 Vs=30V;RL=47Ω 0 −40 −25 0 25 50 Tj[°C] 75 100 Vs=15..30V;RL=47Ω 0 −40 −25 125 ON Slewrate SRON versus Junction Temperature Tj 0 25 50 Tj[°C] 75 100 125 OFF Slewrate SROFF versus Junction Temperature Tj 2 3 Vs=15V;RL=47Ω 1.8 Vs=15V;RL=47Ω Vs=30V;RL=47Ω Vs=30V;RL=47Ω 2.5 1.6 1.4 2 −dV V [ ] dtoff μs dV V [ ] dton μs 1.2 1 1.5 0.8 1 0.6 0.4 0.5 0.2 0 −40 −25 Data Sheet 0 25 50 Tj[°C] 75 100 0 −40 −25 125 10 0 25 50 Tj[°C] 75 100 125 Rev 1.0, 2012-09-01 ITS4200S-ME-P Typical Performance Graphs Typical Characterisitics Standby Current ISSTB versus Junction Temperature Tj Output Leakage current IOUTLK versus Junction Temperature Tj 22 4 20 3.5 18 3 16 2.5 IOUTLK [μA] ISSTB [μA] 14 12 10 2 1.5 8 6 1 4 0.5 2 VIN=0V;Vs=32V 0 −40 −25 0 25 50 Tj [°C] 75 100 VIN=0V;Vs=32V 0 −40 −25 125 Initial Peak Short Circuit Current Limt ILSCP versus Junction Temperature Tj 0 25 50 Tj [°C] 75 100 125 Initial Short Circuit Shutdown time tSCOFF versus Junction Temperature Tj 4 25 Vs=20V 3.5 20 3 tSCOFF [ms] ILSCP [A] 2.5 2 15 10 1.5 1 5 0.5 Vs=20V; tm=150μs 0 −40 −25 Data Sheet 0 25 50 Tj [°C] 75 100 0 −40 −25 125 11 0 25 50 Tj[°C] 75 100 125 Rev 1.0, 2012-09-01 ITS4200S-ME-P Typical Performance Graphs Typical Characterisitics Input Current Consumption IIN versus Junction Temperature Tj Input Current Consumption IIN versus Input voltage VIN 60 60 50 50 40 IIN [μA] IIN [μA] 40 30 20 30 20 10 Tj=−40°C;Vs=15V 10 VIN≤1.8V;Vs=15V Tj=25°C;Vs=15V VIN=5V;Vs=15V 0 −40 −25 0 25 50 Tj [°C] 75 100 Tj=125°C;Vs=15V 125 Input Threshold voltage VINH,L versus Junction Temperature Tj 3 3 2.5 2.5 2 2 1.5 0 5 10 VIN[V] 1 1.5 0.5 OFF;Tj=25°C OFF;Vs=15V ON;Vs=15V 0 25 50 Tj [°C] 75 100 ON;Tj=25°C 0 10 125 Initial Peak Short Circuit Current Limt ILSCP versus Supply Voltage VS Data Sheet 20 1 0.5 0 −40 −25 15 Input Threshold voltage VINH,L versusSupply Voltage VS VIN [V] VIN [V] 0 20 30 Vs[V] 40 50 Max. allowable Inductive single pulse Switch-off Energy EAS versus Load current IL 12 Rev 1.0, 2012-09-01 ITS4200S-ME-P Typical Performance Graphs 4 2500 Tjstart=125°C;Vs=15V 3.5 2000 3 1500 EAS [mJ] ILSCp [A] 2.5 2 1000 1.5 1 500 Tj=−40°C; tm=150μs 0.5 Tj=25°C; tm=150μs Tj=125°C; tm=150μs 0 15 20 25 30 Vs [V] 35 0 40 0.4 0.6 0.8 IL [A] 1 1.2 1.4 Input Switch ON Delay Time tdON versus Supply Voltage VS 300 250 tdON [μs] 200 150 100 50 Tj=25°C 0 10 Data Sheet 15 20 25 30 Vs [V] 35 40 45 13 Rev 1.0, 2012-09-01 ITS4200S-ME-P Application Information 7 Application Information 7.1 Application Diagram The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty for a certain functionality, condition or quality of the device. ITS4200S-ME-P 4 Bias Supervision Overvoltage Protection Wire Harness VS Current Limiter GND3 CS IN 3 220nF Gate Control Circuit Logic ESD Protection Temperature Sensor 1 Wire Harness OUT COUT 2 Complex LOAD 1nF GND GND1 Electronic Control Unit Figure 4 GND2 Application Diagram The ITS4200S-ME-P can be connected directly to a supply network. It is recommended to place a ceramic capacitor (e.g. CS = 220nF) between supply and GND to avoid line disturbances. Wire harness inductors/resistors are sketched in the application circuit above. The complex load (resistive, capacitive or inductive) must be connected to the output pin OUT. A built-in current limit protects the device against destruction. The ITS4200S-ME-P can be switched on and off with standard logic ground related logic signal at pin IN. In standby mode (IN=L) the ITS4200S-ME-P is deactivated with very low current consumption. The output voltage slope is controlled during on and off transistion to minimize emissions. Only a small ceramic capacitor COUT=1nF is recommended to attenuate RF noise. In the following chapters the main features, some typical waverforms and the protection behaviour of the ITS4200S-ME-P is shown. For further details please refer to application notes on the Infineon homepage. Data Sheet 14 Rev 1.0, 2012-09-01 ITS4200S-ME-P Application Information Special Feature Description Supply reverse voltage: R IN IN 3 ROUTPD 1 VS IRev ZDSAZ VBatt ZDSAZ IIN ZDIN VDS I IN ZDIN 4 RIN IN ZDDSCL 3 ITS4200S-ME-P VS 4 VFDS ITS4200S-ME-P OUT ROUTPD 2 1 OUT IRev1 2 VOUT GND RGND VRev Supply over voltage: ZDDSCL 7.2 GND ZL ZL RGND IRev2 If over-voltage is applied to the V S-Pin: Voltage is limited to V ZDSAZ; current can be calculated : IZDSAZ = (VS – VZDSAZ) / RGND A typical value for RGND is 150Ω. In case of ESD pulse on the input pin there is in both polarities a peak current IINpeak ~ VESD / RIN Drain-Source power stage clamper V DSCL: R IN IN 3 ROUTPD ZD IN 1 ROUTPD VOUT Data Sheet EBatt ELoad 2 GND 1 OUT EL LL ER RL LL When an inductive load is switched off a current path must be established until the current is sloped down to zero (all energy removed from the inductive load ). For that purpose the series combination Z DSCL is connected between Gate and Drain of the power DMOS acting as an active clamp . When the device is switched off , the voltage at OUT turns negative until V DSCL is reached. The voltage on the inductive load is the difference between VDSCL and VS. Figure 5 VS ZDSAZ IL RGND IIN OUT 2 GND 3 VBatt ZD SAZ 4 RIN VDSCL I IN VDSCL ZDIN ITS4200S-ME-P VS ZDDSCL IN 4 Energy calculation: ZDDSCL ITS4200S-ME-P If reverse voltage is applied to the device : 1.) Current via load resistance RL : IRev1 = (VRev – VFDS) / RL 2.) Current via Input pin IN and dignostic pin ST : IRev2 = IST+IIN ~ (VRev–VCC)/RIN +(VRev–VCC)/RST1,2 Current IST must be limited with the extrernal series resistor RSTS. Both currents will sum up to: IRev = IRev1+ IRev2 Energy stored in the load inductance is given by : EL= IL²*L/2 While demagnetizing the load inductance the energy dissipated by the Power-DMOS is: EAS = ES + EL – ER With an approximate solution for R L =0Ω: EAS = ½ * L * IL² * {(1- VS / (VS - VDSCL) Special feature description 15 Rev 1.0, 2012-09-01 ITS4200S-ME-P Application Information 7.3 Typical Application Waveforms General Input Output waveforms: Waveforms switching a resistive load: VIN VIN H H L L t VS t VOUT +VS VDS 90% VOUT 70% t t dON SROFF = dV/dt 40% 30% SRON = dV/dt 10% 0 0 t IL tON t t OFF IL 0 0 t OFF ON OFF t ON OFF Waveforms switching a capacitive load: ON OFF Waveforms switching an inducitive load : V IN VIN H H L L t VOUT ~ VS 0 0 t IL ILSC 0 t Figure 6 Data Sheet ON OFF t IL 0 OFF ~ VS VDSCL V OUT t ON t OFF ON OFF ON Typical application waveforms of the ITS4200S-ME-P 16 Rev 1.0, 2012-09-01 ITS4200S-ME-P Application Information 7.4 Protection Behavior Overtemperature concept: Overtemperature behavior: VIN H TjRestart ON L TjTrip t VOUT heating up 0 OFF TJ cooling down Device Status t TJ TjTrip THYS THYS Normal Toggling t Overtemperature OFF Waveforms turn on into a short circuit : ON OFF ON OFF Waveforms short circuit during on state : VIN VIN H H L L t VOUT 0 IL ILSCP ILSCR tm Ipeak Overloaded IL OFF Data Sheet t Controlled by the current limit circuit 0 t OFF Normal operation OUT shorted to GND Shut down by overtemperature and restart by cooling (toggling ) Shut down by overtemperature and restart by cooling (toggling ) Figure 7 Ipeak ILSCR t t SCOFF OFF 0 t Controlled by the current limit circuit 0 t VOUT Protective behaviour of the ITS4200S-ME-P 17 Rev 1.0, 2012-09-01 ITS4200S-ME-P Package outlines and footprint 8 Package outlines and footprint 1.6 ±0.1 6.5 ±0.2 3 ±0.1 A 0.1 MAX. B 1 0.25 M A 2 3 2.3 0.7 ±0.1 4.6 3.5 ±0.2 0.5 MIN. 7 ±0.3 4 0.28 ±0.04 0.25 M B 0...10˚ SOT223-PO V04 Figure 8 SOT-223-4 (Plastic Dual Small Outline Package, RoHS-Compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020 Data Sheet 18 Rev 1.0, 2012-09-01 ITS4200S-ME-P Revision History 9 Revision History Revision Date Changes V 1.0 12-09-01 Datasheet release Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 19 Rev 1.0, 2012-09-01 Edition 2012-09-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.