PTAB182002TCV2R250XTMA1

PTAB182002TC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless copper flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTAB182002TC Package H-49248H-4 (formed leads) Features Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 500 mA, VGS = 1.2 V, ƒ = 1805, 1842, 1880 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth 30 1805 MHz 1842 MHz 1880 MHz 50 Efficiency 20 40 15 30 Gain 10 20 5 10 0 b182002t c gr6 32 36 40 44 48 Drain Efficiency(%) Gain (dB) 25 60 • Asymmetric Doherty design - Main: P1dB = 70 W Typ - Peak: P1dB = 120 W Typ • Broadband internal matching • Integrated ESD protection • Capable of handling 3:1 VSWR @ 30 V, 50 W (average) output power (one-carrier WCDMA signal, 10 dB PAR, Doherty test fixture) • Copper flange for enhanced thermal performance • Pb-free and RoHS-compliant 0 52 Output Power (dBm) RF Characteristics Two-carrier Specifications (device with flat leads tested in an Infineon Doherty production test fixture) VDD = 28 V, VGSPK = (VGS at IDQ = 900 mA)–1.90 V, IDQ = 520 mA, POUT = 29 W avg., ƒ1 = 1870 MHz, ƒ2 = 1880 MHz. 3GPP WCDMA signal: 3.84 MHz bandwidth, 7.5 dB PAR @ 0.01% CCDF. Characteristic Symbol Min Typ Max Unit Gain Gps 14.0 14.8 — dB Drain Efficiency ηD 44 47 — % Intermodulation Distortion IMD — –27.6 –24.0 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 04, 2014-07-01 PTAB182002TC DC Characteristics Characteristic (each side) Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-state Gate Leakage Resistance Current (main) 10 V, VDS = 0 0.1 VV VGS = 12 RIDS(on) GSS — 0.15 — 1.0 — µA Ω On-state Resistance (main) (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.09 0.15 — Ω OperatingResistance Gate Voltage (main) On-state (peak) 10 V, V IDQ 0.1 V mA VGS DS = 28 DS == 520 RDS(on) VGS 2.5 — 0.09 3.0 3.5 — Ω V (main) Operating Gate Voltage (peak) 0 mAmA VDS = 28 V, IDQ = 520 VGS 0.7 2.5 1.1 3.0 1.5 3.5 V Gate Leakage Operating GateCurrent Voltage (peak) 10 V, V IDQ V VGS DS = 28 DS == 00 mA IVGSS GS 0.7 — 1.1 — 1.5 1.0 µA V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 65 V Gate-source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 170 W CW) RqJC 0.34 °C/W Ordering Information Type and Version Order Code Package and Description Shipping PTAB182002TC V2 R250 PTAB182002TCV2R250XTMA1 H-49248H-4, ceramic open-cavity, formed leads, earless Tape & Reel, 250 pcs Pinout Diagram (top view) Peak G1 D1 Pin D1 D2 G1 G2 S (flange) Main G2 D2 Description Peak Device Drain Main Device Drain Peak Device Gate Main Device Gate Source h - x x2 4 8 - h g f- 4 _ D_ p d - a _ 3 - 2 8 - 1 3 S (flange) Lead connections for PTAB182002TC Data Sheet 2 of 8 Rev. 04, 2014-07-01 PTAB182002TC Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 500 mA, VGS = 1.2 V, ƒ = 1842 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth 60 -5 60 -15 50 -15 50 -25 40 -25 40 -35 30 -35 30 IMD Low IMD Up ACPR Efficiency -45 -55 -65 20 10 0 b182002tc gr7 32 36 40 44 IMD (dBc), ACPR (dBc) -5 48 IMD Low IMD Up ACPR Efficiency -45 -55 -65 52 10 0 b182002tc gr8 32 Output Power (dBm) 36 40 44 48 52 Output Power (dBm) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 500 mA, VGS = 1.2 V, ƒ = 1880 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth VDD = 28 V, IDQ = 500 mA, VGS = 1.2 V, ƒ = 1805, 1842, 1880 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth 60 -15 50 -25 40 -35 30 IMD Low IMD Up ACPR Efficiency -45 -55 -65 20 36 40 44 48 1805 MHz 1842 MHz 1880 MHz -30 IMD Up IMD Low 0 -40 52 b182002tc gr10 32 36 40 44 48 52 Output Power (dBm) Output Power (dBm) Data Sheet -20 10 b182002tc gr9 32 -10 IMD (dBc) -5 Drain Efficiency(%) IMD (dBc), ACPR (dBc) 20 Drain Efficiency(%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 500 mA, VGS = 1.2 V, ƒ = 1805 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth Drain Efficiency(%) IMD (dBc), ACPR (dBc) Typical Performance (data taken in a production Doherty test fixture) 3 of 8 Rev. 04, 2014-07-01 PTAB182002TC Typical Performance (cont.) CW Performance at selected VDD CW Performance VDD = 28 V, IDQ = 500 mA, ƒ = 1805, 1842, 1880 MHz, IDQ = 500 mA, ƒ = 1805 MHz 25 60 25 60 40 15 1805 MHz 1842 MHz 1880 MHz 10 5 30 b182002tc gr11 35 40 45 50 20 50 15 40 Gain 10 30 VDD = 24 V VDD = 28 V VDD = 32 V 5 0 20 b182002tc gr12 35 55 Output Power (dBm) 40 CW Performance at selected VDD IDQ = 500 mA, ƒ = 1842 MHz IDQ = 500 mA, ƒ = 1880 MHz 60 60 Efficiency 50 15 40 Gain 30 10 VDD = 24 V VDD = 28 V VDD = 32 V 0 b182002tc gr13 40 45 50 20 Gain (dB) 20 5 10 55 25 Efficiency (%) Gain (dB) 50 CW Performance at selected VDD Efficiency 40 Gain 10 5 10 0 55 50 15 20 30 VDD = 24 V VDD = 28 V VDD = 32 V 20 b182002tc gr14 35 Output Power (dBm) Data Sheet 45 Output Power (dBm) 25 35 20 40 45 Efficiency (%) Gain (dB) Gain Gain (dB) 50 20 Drain Efficiency(%) Efficiency Efficiency (%) Efficiency 50 10 55 Output Power (dBm) 4 of 8 Rev. 04, 2014-07-01 PTAB182002TC Typical Performance (cont.) Small Signal CW Gain & Input Return Loss (single side) VDD = 28 V, IDQ = 500 mA 0 25 -5 Input Return Loss (dB) Power Gain (dB) 20 Gain 15 -10 10 -15 5 IRL -20 0 -5 1550 -25 2150 b182002tc gr15 1650 1750 1850 1950 2050 Frequency (MHz) Load Pull Performance Z Source D Z Load S G G D Main Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 530 mA P1dB Max Output Power Freq [MHz] Z Source [Ω] Z Load [Ω] Gain [dB] POUT [dBm] 1805 5.6 – j6.1 2.3 – j9.4 16.4 1842 12.4 – j12.7 2.1 – j9.4 15.9 1880 15.1 – j14.5 2.1 – j9.8 16.2 Max PAE POUT [W] PAE [%] Z Load [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] 49.89 97 54.4 6.6 – j9.5 18.9 48.16 65 65.0 50.03 101 53.6 5.4 – j8.6 18.7 48.21 66 66.0 50.06 101 54.7 5.0 – j9.0 18.8 48.34 68 68.0 Peak Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 850 mA P1dB Max Output Power Max PAE Freq [MHz] Z Source [Ω] Z Load [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] Z Load [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] 1805 7.5 – j8.9 1.5 – j9.3 18.2 51.47 140 52.8 2.4 – j8.3 20.1 50.17 104 62.5 1842 6.7 – j5.2 1.2 – j9.2 18.2 51.68 147 53.1 2.4 – j8.3 20.3 50.09 102 62.9 1880 5.5 – j6.8 1.4 – j9.7 18.7 51.35 136 54.0 2.4 – j8.3 20.5 49.95 99 62.2 Data Sheet 5 of 8 Rev. 04, 2014-07-01 PTAB182002TC Reference Circuit (1880 MHz) DUT PTAB182002TC Reference Circuit Part No. LTA/PTAB182002TC V2 Rogers 4350, 0.762 mm [.030"] thick, 2 oz. copper, εr = 3.66 PCB Find Gerber files for this test fixture on the Infineon Web site at (http://www.infineon.com/rfpower) R04350, .030 + VG (105) VDD + PTAB182002TC RF_IN RF_OUT VDD VG + + R04350, .030 (63) c 18 2 0 02 t c_ c d_ 5 -9 - 13 Reference circuit assembly diagram (not to scale) Components Information Component Description Manufacturer P/N C101, C107 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C102, C103 Capacitor, 10 µF Panasonic Electronic Components – ECG EEV-HD1H100P C104, C105, C106, C108 Chip capacitor, 24 pF ATC ATC100A240JW150XB R101, R102 Resistor, 10 Ω Panasonic Electronic Components – ECG ERJ-8GEYJ100V R103 Resistor, 50 Ω Anaren C16A50Z4 U1 RF Directional Coupler Anaren X3C19P1-05S C201, C207, C208, C210 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C202, C203, C204, C205 Chip capacitor, 24 pF ATC ATC100A240JW150XB C206, C209 Capacitor, 220 µF Panasonic Electronic Components – ECG EEE-FP1V221AP Input Output Data Sheet 6 of 8 Rev. 04, 2014-07-01 PTAB182002TC Package Outline Specifications Package H-49248H-4 (formed leads) (8.89 [.350]) 2X 4X 1.49±0.25 [.059±.010] 4X 1.00+0.25 –0.10 .039+.010 –.004 (5.08 [.200]) 45° x .64 [.025] [ D1 ] D2 9.78 [.385] CL G1 CL 14.75±0.50 [.581±.020] G2 4X R0.51+0.38 –0.13 [R.020 +.015 –.005] CL 4X 3.81 [.150] 4X 5° TYP. 4X 0.13±0.08 [.005±.003] SPH 2X 12.70 [.500] 3.76±0.25 [.148±.010] 19.81±0.20 [.780±.008] (1.02 [.040]) h- 4 9 2 4 8 h - 4 _ g w _ r 0 1 _ 0 6 - 0 2 - 2 0 1 4 20.57 [.810] S Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [0.005]. 4. Pins: D1 - peak side drain; G1 - peak side gate; D2 - main side drain, G2 - main side gate; S - source (flange). 5. Lead thickness: 0.10 +0.051/–0.025 [0.004+0.002/–0.001]. 6. Gold plating thickness: flange – 0.25 micron [10 microinch] max; leads – 1.14 ± 0.38 micron [45 ± 15 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page (http://www.infineon.com/rfpower) Data Sheet 7 of 8 Rev. 04, 2014-07-01 PTAB182002TC V2 Revision History Revision Date Data Sheet Page Subjects (major changes in comparison with previous revisions) 01 2012-12-03 Advance all Preliminary specifications for this product 02 2012-12-21 Preliminary all Product further developed 03 2013-06-02 Producttion all Final characterization of production-released product 04 2014-07-01 Production all Product now Version 2 due to package change 1, 2 Features and tables updated We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2014-07-01 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 04, 2014-07-01