PTFA070601EV4XWSA1

PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770 MHz band. Features include input matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA070601E Package H-36265-2 PTFA070601F Package H-37265-2 Features 2-Carrier WCDMA Performance VDD = 28 V, IDQ = 600 m A, ƒ = 760 MHz, 3GPP WCDMA s ignal, P/A R = 8 dB, 10 MHz carrier spacing -25 • Broadband internal matching • Typical WCDMA performance, 760 MHz, 28 V - Average output power = 12 W - Gain = 19 dB - Efficiency = 29% • Typical CW performance, 760 MHz, 28 V - Output power at P–1dB = 60 W - Gain = 19 dB - Efficiency = 72% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power • Pb-free and RoHS-compliant 55 50 45 -35 40 Efficiency 35 -40 30 IM3 25 -45 20 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) -30 15 -50 ACPR 10 -55 5 29 31 33 35 37 39 41 43 45 47 Output Power, avg. (dBm ) RF Characteristics WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 600 mA, POUT = 12 W AVG, ƒ = 760 MHz Characteristic Symbol Min Typ Max Unit Intermodulation Distortion IMD — –37 — dBc Gain Gps — 19 — dB Drain Efficiency ηD — 29 — % All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 01, 2009-04-16 PTFA070601E PTFA070601F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 600 mA, POUT = 60 W PEP, ƒ = 760 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 18 19.5 — dB Drain Efficiency ηD 46.5 48 — % Intermodulation Distortion IMD — –31 –29 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.15 — V On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 600 mA VGS 2.0 2.3 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 219 W 1.25 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 60 W CW) RθJC 0.8 °C/W Ordering Information Type and Version Package Outline Package Description Shipping Marking PTFA070601E V4 H-36265-2 Thermally-enhanced, slotted flange, single-ended Tray PTFA070601E PTFA070601F V4 H-37265-2 Thermally-enhanced, earless flange, single-ended Tray PTFA070601F *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 01, 2009-04-16 PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Power Sweep, CW Conditions Broadband Performance VDD = 28 V, IDQ = 600 mA, ƒ = 760 MHz VDD = 28 V, IDQ = 600 mA, POUT = 45 dBm TCASE = -10°C Gain (dB) 20 65 45 55 19 45 18 35 17 16 25 Efficiency 15 15 36 38 40 42 44 46 48 -4 -8 40 -10 35 -14 25 -18 720 730 750 760 -20 770 Broadband Performance (at P–1dB) VDD = 28 V, IDQ = 600 mA -20 65 -25 60 IDQ = 700 mA Gain (dB), Efficiency (%) Intermodulation Distortion (dBc) 740 Frequency (MHz) IM3 vs. Output Power at Selected Biases VDD = 28 V, ƒ = 760 MHz, tone spacing = 1 MHz -30 IDQ = 600 mA -40 -45 -50 IDQ = 450 mA -55 -16 Gain 20 Output Power (dBm) -35 -12 Return Loss 30 15 710 50 -6 Efficiency Input Return Loss (dB) Gain 50 -60 51 Efficiency 55 50 50 45 49 40 Output Power 35 48 30 25 Gain 47 Output Power (dBm) 21 TCASE = 80°C 75 Gain (dB), Efficiency (%) TCASE = 25°C Drain Efficiency (%) 22 20 -65 29 31 33 35 37 39 41 43 45 15 710 47 Output Power, Avg. (dBm) Data Sheet 720 730 740 750 760 46 770 Frequency (MHz) 3 of 10 Rev. 01, 2009-04-16 PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion vs. Output Power Output Power (P–1dB) vs. Drain Voltage VDD = 28 V, IDQ = 600 mA, ƒ = 760 MHz, tone spacing = 1 MHz IDQ = 600 mA, ƒ = 760 MHz 49.5 Efficiency IM3 49 40 -35 30 -45 IM5 20 -55 IM7 10 -65 -75 Output Power (dBm) -25 50 Drain Efficiency (%) Intermodulation Distortion (dBc) -15 30 32 34 36 38 40 42 44 48 47.5 47 46.5 0 28 48.5 22 46 Output Power, Avg. (dBm) 24 26 28 30 32 34 Drain Voltage (V) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 0.8 A Normalized Bias Voltage (V) 1.03 2.4 A 1.02 6.0 A 1.01 12.0 A 1.00 18.0 A 0.99 24.0 A 0.98 32.0 A 0.97 0.96 -20 0 20 40 60 80 100 Case Temperature (°C) Data Sheet 4 of 10 Rev. 01, 2009-04-16 PTFA070601E PTFA070601F Confidential, Limited Internal Distribution R -- Broadband Circuit Impedance RA T O RD G E NE MHz R jX R jX 700 5.32 –4.82 3.14 0.61 720 5.07 –4.40 3.01 1.02 740 4.84 –3.91 2.88 1.44 760 4.69 –3.40 2.79 1.90 800 4.55 –2.39 2.69 2.82 0.2 0.1 0 .0 Z Source 800 MHz 700 MHz 0.1 W