PTFA072401ELV4XWSA1

PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. VDD = 30 V, IDQ = 1.9 A, ƒ = 765 MHz 65 20 55 Gain 45 18 35 17 25 16 15 Efficiency 15 • Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion = –39 dBc Drain Efficiency (%) Gain (dB) • Broadband internal matching 21 5 30 35 40 45 50 PTFA072401FL Package H-34288-2 Features Gain & Efficiency vs. Output Power 19 PTFA072401EL Package H-33288-2 55 • Typical CW performance, 770 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 58% • Integrated ESD protection • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power • Thermally-enhanced packages, Pb-free and RoHS compliant with low gold ( Z0 = 50 Ω RD G E NE RA T O Z Load W MHz R jX R jX 725 2.53 –4.83 1.64 –1.54 736 2.48 –4.64 1.55 –1.48 748 2.44 –4.41 1.46 –1.33 759 2.41 –4.22 1.42 –1.17 770 2.37 –4.04 1.36 –1.11 0.5 0.4 0.3 0.2 0.1 0.0 Z Source 770 MHz 725 MHz Z Load 770 MHz 725 MHz 0.1 E W AV