PTFA082201EV4R250XTMA1

PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description VDD = 30 V, IDQ = 1950 mA, ƒ = 894 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth -30 40 -35 • Thermally-enhanced packages, Pb-free and RoHS compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 894 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion = –37 dBc - Adjacent channel power = –39.5 dBc • Typical CW performance, 894 MHz, 30 V - Output power at P–1dB = 250 W - Efficiency = 59% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR at 30 V, 220 W (CW) output power ue -40 IMD tin ACPR 20 -45 sc on Gain 10 IMD (dBc), ACPR (dBc) d 50 30 -50 Efficiency 0 30 35 40 45 s uc t PTFA082201F Package H-37260-2 Features 2-Carrier WCDMA Performance Drain Efficiency (%) PTFA082201E Package H-36260-2 pr od The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. -55 50 di Output Power, Avg. (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1950 mA, POUT = 55 W average ƒ1 = 884 MHz, ƒ2 = 894 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 18.0 — dB Drain Efficiency ηD — 30 — % Intermodulation Distortion IMD — –37 — dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 05, 2015-01-09 PTFA082201E PTFA082201F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1950 mA, POUT = 220 W PEP, ƒ = 894 MHz, tone spacing = 1 MHz Min Typ Max Unit Gain Gps 17.5 18.0 — dB Drain Efficiency ηD 40 43 — % Intermodulation Distortion IMD — –29 dBc DC Characteristics Conditions Symbol Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA Drain Leakage Current VDS = 28 V, V GS = 0 V Min Typ Max Unit V(BR)DSS 65 — — V IDSS — — 1.0 µA IDSS — — 10.0 µA RDS(on) — 0.04 — Ω VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 30 V, IDQ = 1950 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings ue Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 700 W 4.0 W/°C di sc on Parameter d On-State Resistance tin VDS = 63 V, V GS = 0 V — pr od Characteristic s Symbol uc t Characteristic Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 220 W CW) RθJC 0.25 °C/W Ordering Information Type and Version Package Outline Package Description Shipping Marking PTFA082201E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended Tray PTFA082201E PTFA082201F V4 H-37260-2 Tray PTFA082201F Thermally-enhanced earless flange, single-ended *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 05, 2015-01-09 PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) 2-Carrier WCDMA Performance Two-carrier WCDMA Power Sweep VDD = 30 V, IDQ = 1950 mA, ƒ = 894 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth VDD = 30 V, IDQ = 1600 mA, ƒ1 = 889 MHz, ƒ2 = 894 -40 20 -45 10 -50 ACPR 0 -55 30 35 40 45 -20 25 -30 -40 20 15 ACPR -50 10 -60 50 0 5 20 30 40 50 Output Power (dBm) 2-Tone Broadband Performance VDD = 30 V, IDQ = 1950 mA, ƒ = 894 MHz VDD = 30 V, IDQ = 1950 mA, POUT = 110 W Gain 19 18 0 60 45 -5 50 40 di Gain (dB) 20 50 30 17 20 Efficiency 16 10 15 Efficiency (%), Gain (dB) 21 70 Drain Efficiency (%) 22 sc on Gain & Efficiency vs. Output Power 35 40 45 50 55 -10 Return Loss 35 -15 30 -20 25 -25 20 15 850 60 865 880 895 -30 910 Frequency (MHz) Output Power (dBm) Data Sheet Efficiency Gain 0 30 40 Return Loss (dB) tin ue d Output Power (dBm) 10 Drain Efficiency (%) Efficiency 30 s IMD Efficiency -10 uc t Gain 35 pr od 30 -35 ACPR (dBc) 40 TCASE = 25°C TCASE = 90°C IMD (dBc), ACPR (dBc) Efficiency (%), Gain (dB) 0 -30 50 3 of 10 Rev. 05, 2015-01-09 PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Typical Performance (cont.) Power Sweep Intermodulation Distortion vs. Output Power VDD = 30 V, ƒ = 894 MHz, VDD = 30 V, IDQ = 1950 mA, ƒ1 = 893, ƒ2 = 894 MHz series show IDQ -30 19 1950 mA 18 -50 5th -60 pr od 1600 mA 3rd Order -40 uc t 2400 mA s -20 IMD (dBc) Power Gain (dB) 20 7th -70 17 -80 30 35 40 45 50 55 Output Power (dBm) 30 35 40 45 50 55 tin ue d Output Power, PEP (dBm) IS-95 CDMA Performance IDQ = 1950 mA, ƒ = 960 MHz VDD = 30 V, IDQ = 1950 mA, ƒ = 894 MHz 40 Drain Efficiency (%) 53 -40 Adj 750 kHz di Output Power (dBm) 54 30 -50 20 -60 Efficiency 10 -70 Alt1 1.98 MHz 0 52 24 26 28 30 32 34 Data Sheet -80 25 36 Drain Voltage (V) Adj. Ch. Power Ratio (dBc) sc on Output Power vs. Drain Voltage 30 35 40 45 50 Output Power, Avg. (dBm) 4 of 10 Rev. 05, 2015-01-09 PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 s R3 2K V C3 0.001µF R4 2K V R5 10 V uc t C2 0.001µF R6 5.1K V C4 10µF 35V C5 0.1µF L1 R7 5.1KV C6 1µF C7 33pF C11 33pF l6 R8 10 V C8 33pF l2 l3 l5 C10 8.2pF sc on tin C9 3.9pF l4 C13 10µF 50V C14 100µF 50V C23 3.3pF DUT d l1 C12 1µF V DD C15 0.1µF C16 10µF 50V l7 ue RF_IN pr od R2 1.3K V l9 l10 l11 C25 33pF l12 l13 RF_OUT C21 0.1µF C22 10µF 50V C24 3.3pF l8 L2 a082201ef_bd_12-14-07 C17 33pF C18 1µF C19 10µF 50V C20 100µF 50V Reference circuit schematic for ƒ = 894 MHz Circuit Assembly Information Microstrip l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 (taper) l11 (taper) l12 l13 PTFA082201E or PTFA082201F 0.76 mm [.030"] thick, εr = 3.48 di DUT PCB Electrical Characteristics at 894 MHz1 0.065 0.049 0.024 0.083 0.027 0.190 0.183 0.095 0.031 0.077 0.025 0.028 LDMOS Transistor Rogers RO4350 1 oz. copper Dimensions: L x W ( mm) Dimensions: L x W (in.) λ, 50.0 Ω λ, 38.0 Ω λ, 38.0 Ω λ, 7.8 Ω λ, 7.8 Ω λ, 78.0 Ω λ, 60.0 Ω λ, 8.4 Ω λ, 8.4 Ω / 11.2 Ω λ, 11.2 Ω / 37.0 Ω λ, 37.0 Ω λ, 50.0 Ω 13.13 x 1.60 9.78 x 2.54 4.83 x 2.54 15.44 x 17.83 4.95 x 17.83 40.64 x 0.74 37.54 x 1.24 17.68 x 16.48 5.94 x 16.48 / 11.91 14.53 x 11.91 / 2.64 4.98 x 2.64 5.74 x 1.60 0.517 0.385 0.190 0.608 0.195 1.600 1.478 0.696 0.234 0.572 0.196 0.226 x 0.063 x 0.100 x 0.100 x 0.702 x 0.702 x 0.029 x 0.049 x 0.649 x 0.649 / 0.469 x 0.469 / 0.104 x 0.104 x 0.063 1Electrical characteristics are rounded. Data Sheet 6 of 10 Rev. 05, 2015-01-09 PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Reference Circuit (cont.) RO4350_.030 RO4350_.030 QQ1 R4 C4 C5 C6 C3 C1 C16 VDD VDD C11 LM R3 C2 R7 R1 R2 R6 C7 L1 Q1 C12 C14 s R5 C15 uc t C13 R8 C23 C8 RF_IN pr od C9 C10 C19 C18 d ue A092201in_02 C21 C20 C17 A082201in_02 RF_OUT C25 C24 VDD L2 C22 A082201out_02 A092201out_02 a082201ef _assy tin Reference circuit assembly diagram (not to scale)* Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C15, C21 C6, C12, C18 C7, C8, C11, C17, C25 C9 C10 C13, C16, C19, C22 C14, C20 C23, C24 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R8 R6, R7 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Capacitor, 1 µF Ceramic capacitor, 33 pF Ceramic capacitor, 3.9 pF Ceramic capacitor, 8.2 pF Tantalum capacitor, 10 µF, 50 V Electrolytic capacitor, 100 µF, 50 V Ceramic capacitor, 3.3 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor 1.2 k-ohms Chip resistor 1.3 k-ohms Chip resistor 2 k-ohms Potentiometer 2 k-ohms Chip resistor 10 ohms Chip resistor 5.1 k-ohms Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Garrett Electronics Digi-Key ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 920C105 100B 330 100B 3R9 100B 8R2 TPSE106K050R0400 P5182-ND 100B 3R3 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P5.1KECT-ND di sc on Component *Gerber Files for this circuit available on request Data Sheet 7 of 10 Rev. 05, 2015-01-09 PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36260-2 45° X 2.03 [.080] 2X 12.70 [.500] 4X R 1.52 [R.060] 4.83±0.50 [.190±.020] uc t s C L D pr od S +0.10 LID 13.21 –0.15 C L FLANGE 13.72 [.540] 23.37±0.51 [.920±.020] 2X R1.63 [R.064] d [.520 +.004] –.006 ue G tin 27.94 [1.100] 22.35±0.23 [.880±.009] C L sc on SPH 1.57 [.062] di 1.02 [.040] 4.11±0.38 [.162±.015] 0.0381 [.0015] -A34.04 [1.340] h - 3 6 + 3 7 2 6 0 - 2 _ 3 6 2 6 0 / 0 4 - 2 5 - 0 8 Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Data Sheet 8 of 10 Rev. 05, 2015-01-09 PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37260-2 2X 12.70 [.500] 45° X 2.031 [.080] 4.83±0.50 [.190±.020] pr od uc t D 13.72 [.540] s CL C L LID 13.21 +0.10 –0.15 [.520 +.004 ] –.006 d 23.37±0.51 [.920±.020] ue G +0.381 tin 4X R0.508 –0.127 [R.020 +.015 ] –.005 S di 1.02 [.040] sc on LID 22.35±0.23 [.880±.009] 4.11±0.38 [.162±.015] 0.0381 [.0015] -Ah - 3 6 + 3 7 2 6 0 - 2 _ 3 7 2 6 0 0 / 4 - 2 5 - 0 8 SPH 1.57 [.062] FLANGE 23.11 [.910] Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 05, 2015-01-09 PTFA082201E/F V4 Confidential, Limited Internal Distribution Revision History: 2015-01-09 2009-02-20, Data Sheet Previous Version: Page Subjects (major changes since last revision) All Product discontinued. Please see PD notes : PD_215_14. s Data Sheet uc t We Listen to Your Comments pr od Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com d To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 20   sc on Published by Infineon Technologies AG 81726 Munich, Germany tin ue GOLDMOS® is a registered trademark of Infineon Technologies AG. © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer di The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 05, 2015-01-09