PTFA092213FLV5XWSA1

PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description -25 Efficiency -40 m 0 -35 IMD_lower -45 m -10 -20 IMD_upper -30 30 35 40 -50 ACPR ig n • Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 250 W - Linear Gain = 17.5 dB - Efficiency = 52% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift -55 45 • Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 50 W - Linear Gain = 17.5 dB - Efficiency = 29% - Intermodulation distortion = –32 dBc - Adjacent channel power = –42.5 dBc fo r en de -30 10 d -20 20 de s ne • Broadband internal matching IMD (dBc) , ACPR (dBc) 40 re co Gain (dB) , Drain Efficiency (%) VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz Bandwidth Gain PTFA092213FL Package H-34288-4/2 Features Two-carrier WCDMA Performance 30 PTFA092213EL Package H-33288-6 w The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature internal I/O matching and thermally-enhanced open-cavity ceramic packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. • Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power 50 Output Power (dBm) no t • Pb-free, RoHS-compliant RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1850 mA, POUT = 50 W average, ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 17.5 — dB Drain Efficiency hD — 29 — % Intermodulation Distortion IMD — –32 — dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 05, 2015-03-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1850 mA, POUT = 200 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz Min Typ Max Unit Gain Gps 17 17.5 — dB Drain Efficiency hD 40 42 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Conditions Symbol Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS VDS = 63 V, VGS = 0 V On-State Resistance VGS = 10 V, VDS = 0.1 V Operating Gate Voltage VDS = 30 V, IDQ = 1850 mA Gate Leakage Current VGS = 10 V, VDS = 0 V Max Unit 65 — — V — — 1.0 µA — — 10.0 µA RDS(on) — 0.04 — W VGS 2.0 2.5 3.0 V IGSS — — 1.0 µA ne fo r d Symbol Value VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70 °C, 220 W CW) RqJC 0.23 no t re co m Drain-Source Voltage m Parameter Typ IDSS en de Maximum Ratings Min w Characteristic ig n Symbol de s Characteristic Unit °C/W Ordering Information Type and Version Package Outline Package Description Shipping PTFA092213EL V4 H-33288-6 Thermally-enhanced, slotted flange, single-ended Tray PTFA092213EL V4 R250 H-33288-6 Thermally-enhanced, slotted flange, single-ended Tape & Reel, 250 pcs PTFA092213FL V5 Thermally-enhanced, earless flange, single-ended Tray H-34288-4/2 PTFA092213FL V5 R250 H-34288-4/2 Data Sheet Thermally-enhanced, earless flange, single-ended Tape & Reel, 250 pcs 2 of 10 Rev. 05, 2015-03-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Typical Performance CW Performance Gain & Efficiency vs. Output Power CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ = 960 MHz VDD = 30 V, IDQ = 1.85 A, ƒ = 960 MHz 16 30 20 Efficiency 14 13 35 40 45 50 18 17 16 10 15 0 14 35 55 30 20 10 0 40 45 50 55 Output Power (dBm) en de d Output Power (dBm) 40 Gain fo r 15 50 Drain Efficiency (%) 40 19 60 Efficiency de s 17 Gain (dB) 50 Drain Efficiency (%) Gain ig n 20 60 18 70 TCA S E = -10°C TCA S E = 25°C TCA S E = 90°C w 19 Gain (dB) 21 70 ne 20 Power Sweep, CW Broadband Two-tone Gain, Efficiency & Return Loss vs. Frequency m m VDD = 30 V, ƒ = 960 MHz Efficiency 40 35 Return Loss 30 25 20 0 -5 -10 -15 -20 -25 -30 Gain 20 19 Power Gain (dB) 45 no t Drain Efficiency (%), Gain (dB) 50 Return Loss (dB) re co VDD = 30 V, IDQ = 1.85 A, PO UT = 110 W -35 15 -40 10 IDQ = 2.6 A 17 IDQ = 1.85 A 16 IDQ = 1.1 A 15 900 910 920 930 940 950 960 970 980 990 35 40 45 50 55 Output Power (dBm) Frequency (MHz) Data Sheet 18 3 of 10 Rev. 05, 2015-03-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Typical Performance (cont.) IS-95 CDMA Performance Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ = 960 MHz VDD = 30 V, IDQ = 1.85 A, ƒ1 = 960 MHz, ƒ2 = 959 MHz -50 -60 7th ig n -40 Efficiency de s 3rd Order -40 40 Adj 750 kHz 30 20 -50 -60 w Drain Efficiency (%) 5th Alt1 1.98 MHz -70 ne -30 IMD (dBc) -30 50 10 -80 0 35 40 45 50 fo r -70 30 55 35 40 45 Output Power (dBm), Avg. 50 en de d Output Power, PEP (dBm) Adj. Ch. Power Ratio (dBc) -20 Single-carrier WCDMA Performance re co m m VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8.5 dB, 3.84 MHz Bandwidth -35 IMD 40 -40 30 -45 Gain 20 -50 Efficiency 10 IMD (dBc) 50 -30 no t Gain (dB), Efficiency (%) 60 -55 0 -60 30 35 40 45 50 Output Power (dBm) Data Sheet 4 of 10 Rev. 05, 2015-03-04 Rev.05,20150304 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K C2 .001µF QQ1 LM7805 R1 1.2K VDD Q1 BCP56 R3 1.0K C5 0.001µF R5 1.2K C6 .01µF 7 R8 5.1K C7 47pF C8 4.7µF C9 .01µF C10 33pF 6 R9 10  3 4 C12 3.0pF VDD C20 10µF C21 10µF 50V 9 C29 1.7pF 10 11 C31 33pF 12 13 RF_OUT C30 1.7pF C14 4.8pF C22 10µF C23 10µF C24 .01µF C25 1µF C26 10µF C27 10µF C28 10µF 50V a092213efl_bd_09-02-2010 m C13 4.8pF 5 C19 10µF d DUT 2 en de 1 C18 1µF 8 C11 33pF RF_IN C17 .01µF w R7 10  C16 10µF ne R6 10  C15 10µF fo r R4 1.2K de s ig n C3 0.001µF C4 0.001µF Circuit Assembly Information m Reference circuit block diagram for ƒ = 960 MHz PTFA092213EL or PTFA092213FL PCB LTN/PTFA092213EF re co DUT 0.76 mm [.030"] thick, er = 3.48, Rogers RO4350, 1 oz. copper no t Electrical Characteristics at 960 MHz Transmission Electrical Dimensions: L x W (mm) Dimensions: L x W (in.) Line Characteristics l1 l2 0.167 l, 50.1 W 31.75 x 1.65 1.250 x 0.065 0.047 l, 38.0 W 8.38 x 2.54 0.330 x 0.100 l3 0.039 l, 38.0 W 7.37 x 2.54 0.290 x 0.100 l4 0.072 l, 7.8 W 12.45 x 17.78 0.490 x 0.700 l5 0.046 l, 7.8 W 7.87 x 17.78 0.310 x 0.700 l6 0.163 l, 78.3 W 31.75 x 0.74 1.250 x 0.029 l7, l8 0.043 l, 23.5 W 7.75 x 4.95 0.305 x 0.195 l9 0.130 l, 8.3 W 22.61 x 16.51 0.890 x 0.650 l10 (taper) 0.032 l, 8.3 W / 11.7 W 5.72 x 16.51 / 11.30 0.225 x 0.650 / 0.445 l11 (taper) 0.053 l, 11.7 W / 37.0 W 9.78 x 11.30 / 2.64 0.385 x 0.445 / 0.104 l12 0.009 l, 37.0 W 16.51 x 2.64 0.650 x 0.104 l13 0.167 l, 50.1 W 31.75 x 1.65 1.250 x 0.065 Data Sheet 6 of 10 Rev. 05, 2015-03-04 Rev.05,20150304 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-6 V 4.889±.510 [.192±.020] V D S ig n 4X 30° 4X R1.524 [R.060] 2X 5.080 [.200] (2 PLS) 4X 1.143 [.045] (4 PLS) de s 45° X 2.032 [45° X .080] 9.779 [.385] 19.558±.510 [.770±.020] G E F fo r 2X R1.626 [R.064] ne w CL 9.398 [.370] H -33288 - 6_ po _02 -18 - 2010 d CL 2X 12.700 [.500] 27.940 [1.100] 22.352±.200 [.880±.008] 4.039 +.254 –. 127 010 [.159 +. –. 005 ] 1.575 [.062] (SPH) CL 34.036 [1.340] no t 1.016 [.040] re co m m en de 2X 22.860 [.900] Diagram Notes—unless otherwise specified: Data Sheet 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: A = gate, B = source, C = drain, D = VDD, E, F = N.C. 5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. 8 of 10 Rev. 05, 2015-03-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-34288-4/2 22.860 [.900] 45° X 2.032 [45° X .080] 2X 1.143 [.045] C L 2X 30° V 9.398 [.370] 9.779 [.385] 19.558±.510 [.770±.020] 4X R0.508+.381 -.127 R.020+.015 -.005 G ] d fo r ne C L [ 4.889±.510 [.192±.020] w D de s V ig n 2X 5.080 [.200] en de 2X 12.700 [.500] 4.039+.254 -.127 .159+.010 -.005 22.352±.200 [.880±.008] ] m m [ re co 1.575 [.062] (SPH) C L 23.114 [.910] S no t 1.016 [.040] C 66065-A0003- C743- 01-0027 H- 34288- 4_ 2 .dwg Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate; V = VDD. 5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 05, 2015-03-04 PTFA092213EL V4/ PTFA092213 FL V5 Confidential, Limited Internal Distribution Revision History: 2015-03-04 Previous Version: 2010-11-04, Data Sheet Page Subjects (major changes since last revision) All Not recommended for new design We Listen to Your Comments de s Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: ig n Data Sheet highpowerRF@infineon.com m m re co Edition 201   Published by Infineon Technologies AG 81726 Munich, Germany en de d fo r ne w To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International © 2009 Infineon Technologies AG All Rights Reserved. no t Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 05, 2015-03-04