PTFA142401ELV4XWSA1

PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band. Features include internal I/O matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. 40 -25 Efficiency -30 30 -35 20 ACPR Low 10 Drain Efficiency (%) Adjacent Channel Power Ratio (dB) VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz, DVB-T signal, PAR = 9.65 dB at 0.01%, 8 MHz BW ACPR = 1475+/-4.3 MHz delta marker, 30 kHz RBW ACPR Hi 0 -45 42 43 44 45 46 47 PTFA142401FL Package H-34288-2 Features DVB-T Drive-up -40 PTFA142401EL Package H-33288-2 48 49 Average Output Power (dBm) • Pb-free, RoHS-compliant and thermally-enhanced packages with less than 0.25 micron Au plating • Broadband internal matching • Typical DVB-T performance at 1475 MHz, 30 V - Average output power = 47.0 dBm - Linear Gain = 16.0 dB - Efficiency = 27.5% - Adjacent channel power = –32 dBc • Typical CW performance, 1475 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 52% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 200 W (CW) output power RF Characteristics DVB-T Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.0 A, POUT = 50 W average ƒ = 1475 MHz DVB-T, channel bandwidth = 8.0 MHz , peak/average = 9.65 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 16.5 — dB Drain Efficiency ηD — 27.5 — % ACPR — –32 — dBc Adjacent Channel Power Ratio (±4.3 MHz offset, 30 kHz RBW) All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 2.0 A, POUT = 240 W PEP, ƒ = 1500 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 15.0 16.0 — dB Drain Efficiency ηD 40 43 — % Intermodulation Distortion IMD — –31 –29 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.05 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 2.0 A VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 625 W 3.57 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 240 W CW) RθJC 0.28 °C/W Ordering Information Type and Version Package Outline Package Description Shipping Marking PTFA142401EL V4 H-33288-2 Thermally-enhanced, slotted flange, single-ended Tray PTFA142401EL PTFA142401FL V4 H-34288-2 Thermally-enhanced, earless flange, single-ended Tray PTFA142401FL *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Typical Performance (data taken in an Infineon test fixture) Two-tone Drive-up Power Sweep, CW Conditions VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz, tone spacing = 1 MHz VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz 45 Efficiency 35 IM5 IM3 30 -45 25 IM7 -50 20 -55 15 -60 10 -65 16 5 45 47 49 51 53 50 Gain 15 40 Efficiency 14 30 13 20 12 55 0 40 Output Power, PEP (dBm) 160 200 240 10 280 Output Power (W) Broadband Performance Pulsed CW Characteristics VDD = 30 V, IDQ = 1800 mA, ƒ = 1475 MHz 10 µs pulse time, 10% duty cycle Return Loss 59 -5 57 30 -10 25 -15 Efficiency 20 15 10 1400 -20 -25 Gain 1430 1460 1490 1520 Output Power (dBm) 35 0 Input Return Loss (dB) Gain (dB), Efficiency (%) 120 VDD = 30 V, IDQ = 2000 mA, POUT = 50 W 40 Ideal P OUT 55 53 Measured POUT 51 49 47 -30 1550 30 32 34 36 38 40 42 Input Power (dBm) Frequency (MHz) Data Sheet 80 Drain Efficiency (%) -35 -40 60 40 Gain (dB) -30 17 Drain Efficiency (%) Intermodulation Distortion (dBc) -25 3 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Typical Performance (cont.) CW Power Sweep (P–1dB) VDD = 30 V, ƒ = 1500 MHz VDD = 30 V, IDQ = 1.8 A, ƒ = 1500 MHz 18 Drain Efficiency 17 16.5 60 50 Gain Gain (dB) Power Gain (dB) 17.0 IDQ = 1800 mA 16.0 IDQ = 1500 mA IDQ = 1200 mA IDQ = 600 mA 15.5 16 40 15 30 TCASE = 25°C 14 IDQ = 900 mA 15.0 20 TCASE = 90°C 13 0 40 80 120 160 200 240 0 40 80 120 160 200 240 Drain Efficiency (%) Gain vs. Output Power 10 280 Output Power (W) Output Power (W) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current Normalized Bias Voltage (V) 2.33 A 1.03 1.03 4.65 A 6.99 A 1.02 1.02 1.01 1.01 9.33 A 11.64 A 13.98 A 16.32 A 1.00 1.00 0.99 0.99 0.98 0.98 -20 18.66 A 21.00 A 0 20 40 60 80 100 Case Temperature (°C) Data Sheet 4 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution S Z Source Ω Frequency MHz R jX Z Load Ω R jX 1450 2.3 –6.4 1.2 –1.4 1463 2.3 –6.2 1.2 –1.3 1475 2.2 –6.0 1.2 –1.2 1488 2.2 –5.8 1.2 –1.2 1500 2.1 –5.7 1.2 –1.1 0.2 Z Load 0.1 G 0.0 Z Load W ARD LOA D T HS T O L E NG Z Source 1500 MHz 1450 MHz Z Source 0.1 1500 MHz 1450 MHz E W AV