PTFA190451FV4XWSA1

PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description VDD = 28 V, IDQ = 450 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing ue 25 20 tin -40 -45 ACPR -50 -55 30 32 34 36 Drain Efficiency (%) IM3 30 38 15 s uc t Broadband internal matching • Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion = –39 dBc - Adjacent channel power = –42 dBc • Typical CW performance, 1960 MHz, 28 V - Output power at P–1dB = 60 W - Efficiency = 60% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power • Pb-free and RoHS compliant 10 5 40 • d 35 Efficiency sc on IM3 (dBc), ACPR (dBc) -25 -35 PTFA190451F Package H-37265-2 Features 2-Carrier WCDMA Drive-up -30 PTFA190451E Package H-36265-2 pr od The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band. These devices are available in thermally-enhanced packages with eared or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. 42 di Average Output Power (dBm) RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 11 W average ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17.5 — dB Drain Efficiency ηD 27 28 — % Intermodulation Distortion IMD — –39 –37 dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 04, 2015-01-12 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz Min Typ Max Unit Gain Gps — 17.5 — dB Drain Efficiency ηD — 38 — % Intermodulation Distortion IMD — — dBc DC Characteristics Conditions Symbol Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA Drain Leakage Current VDS = 28 V, V GS = 0 V Min Typ Max Unit V(BR)DSS 65 — — V IDSS — — 1.0 µA IDSS — — 10.0 µA RDS(on) — 0.91 — Ω VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 450 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Symbol Value Unit VDSS 65 V VGS –0.5 to +12 V TJ 200 °C PD 211 W 1.21 W/°C ue d On-State Resistance tin VDS = 63 V, V GS = 0 V –31 pr od Characteristic s Symbol uc t Characteristic Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature sc on Maximum Ratings di Total Device Dissipation Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 0.83 °C/W Ordering Information Type and Version Package Outline Package Description Shipping Marking PTFA190451E V4 H-36265-2 Thermally-enhanced slotted flanges, single-ended Tray PTFA190451E PTFA190451F V4 H-37265-2 Thermally-enhanced earless flange, single-ended Tray PTFA190451F *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 04, 2015-01-12 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) 2-Tone Drive-up Broadband Performance VDD = 28 V, IDQ = 450 mA, ƒ = 1960 MHz, tone spacing = 1 MHz 30 -15 25 -20 Efficiency 20 -25 15 -30 Gain 10 1900 1920 1940 1960 1980 2000 -35 IM3 -40 -45 -50 -35 2020 40 35 IM5 30 25 20 IM7 -55 15 10 -60 5 -65 34 36 38 Drain Efficiency (%) Return Loss Efficiency -30 s -10 uc t 35 45 -25 pr od -5 Intermodulation Distortion (dBc) 40 Input Return Loss (dB) Gain (dB), Efficiency (%) VDD = 28 V, IDQ = 450 mA, POUT = 12 W 40 42 44 46 48 Output Power, PEP (dBm) tin ue d Frequency (MHz) Two-carrier WCDMA at Various Biases Power Sweep, CW Conditions VDD = 28 V, ƒ = 1960 MHz, 3GPP WCDMA signal, VDD = 28 V, IDQ = 450 mA, ƒ = 1990 MHz -47 400 mA -52 -57 34 36 38 40 50 16 40 15 30 20 10 13 42 0 10 20 30 40 50 60 Output Power (W) Output Power, Avg. (dBm) Data Sheet 17 14 350 mA 32 60 Efficiency 450 mA 30 Gain 18 70 TCASE = 90°C Drain Efficiency (%) -42 500 mA Gain (dB) 550 mA -37 TCASE = 25°C 19 di 3rd Order IMD (dBc) -32 sc on PAR = 8 dB, 10 MHz carrier spacing, series show IDQ 3 of 10 Rev. 04, 2015-01-12 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion Products vs. Tone Spacing Single-carrier WCDMA Drive-up Efficiency -35 25 20 -40 ACPR Up ACPR Low -45 15 -50 10 -55 5 30 32 34 36 38 40 42 -25 s 30 3rd -30 uc t -30 POUT = 46.5 dBm PEP -20 -35 -40 5th pr od 35 Intermodulation Distortion (dBc) -25 VDD = 28 V IDQ = 450 mA, ƒ = 1960 MHz, Drain Efficiency (%) Adjacent Channel Power Ratio (dBc) VDD = 28 V, IDQ = 450 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, P/A R = 8.5 dB, 3.84 MHz BW 44 -45 -50 7th -55 0 Average Output Power (dBm) 5 10 15 20 25 30 35 40 tin 6-Carrier TD-SCDMA Performance VDC = 28 V, IDQ = 380 mA, ƒo = 2017.5 MHz IM3 Up -25 Efficiency -30 -35 40 35 30 25 20 -40 Gain -45 15 Drain Efficiency (%) -20 45 di 3rd Order IMD (dBc) -15 50 Gain (dB), Drain Efficiency (%) -10 sc on IDQ = 450 mA, ƒ = 1960 MHz, POUT (PEP) = 46.5 dBm, tone spacing = 1 MHz 25 -10 20 -20 15 Alt Up 10 25 26 27 28 29 30 31 -40 -50 5 Adj Low Alt Low 10 23 24 -30 Adj Up Efficiency ACPR (dBc) IM3, Drain Efficiency and Gain vs. Supply Voltage ue d Tone Spacing (MHz) 0 32 33 -60 29 Supply Voltage (V) 31 33 35 37 39 Output Power, Avg. (dBm) *See Infineon distributor for future availability. Data Sheet 4 of 10 Rev. 04, 2015-01-12 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R1 1.2K V QQ1 LM7805 V DD R3 2K V C3 0.001µF uc t C2 0.001µF s Q1 BCP56 R4 2K V R5 10 V C4 10µF 35V R6 1K V C5 0.1µF R8 5.1K R7 1K V C6 1µF C7 0.01µF C8 10pF pr od R2 1.3K V l7 R9 10 V d l2 l3 l5 C14 22µF 50V C16 10pF l8 l9 l11 l12 l13 RF_OUT C15 0.7pF tin C10 2.8pF l4 C13 1µF l10 DUT ue l1 C12 0.02µF l6 C9 10pF RF_IN V DD C11 10pF a190451ef_sch sc on Reference circuit schematic for ƒ = 1960 MHz Circuit Assembly Information DUT PTFA190451E or PTFA190451F PCB 0.76 mm [.030"] thick, εr = 3.48 Microstrip Electrical Characteristics at 1960 MHz1 l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 di LDMOS Transistor Rogers 4350 0.031 0.089 0.076 0.045 0.014 0.007 0.123 0.016 0.096 0.171 0.053 0.063 0.030 1 oz. copper Dimensions: L x W ( mm) Dimensions: L x W (in.) λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 6.7 Ω λ, 6.7 Ω λ, 77.0 Ω λ, 72.0 Ω λ, 8.5 Ω λ, 8.5 Ω λ, 67.0 Ω λ, 41.0 Ω λ, 41.0 Ω λ, 54.0 Ω 2.79 x 1.57 8.26 x 1.57 7.04 x 1.57 3.84 x 21.08 1.14 x 21.08 0.64 x 0.76 11.66 x 0.89 1.30 x 16.21 8.13 x 16.21 16.13 x 1.04 4.80 x 2.31 5.72 x 2.31 2.79 x 1.52 0.110 0.325 0.277 0.151 0.045 0.025 0.459 0.051 0.320 0.635 0.189 0.225 0.110 x x x x x x x x x x x x x 0.062 0.062 0.062 0.830 0.830 0.030 0.035 0.638 0.638 0.041 0.091 0.091 0.060 1Electrical characteristics are rounded. Data Sheet 6 of 10 Rev. 04, 2015-01-12 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Reference Circuit (cont.) C3 C1 VDD C2 R1 R2 C4 R6 R7 R4 C11 C12 C14 C3 C1 R1 R2 C4 R9 C7 R8 C8 R6 R7 C10 C15 C16 Q1 C6 pr od RF_OUT QQ1 C2 C7 R8 C8 R9 a190451ef_dtl A190451_01 ue d C9 R3 C13 Q1 C6 RF_IN R5 C5 QQ1 s R3 R4 uc t R5 C5 RO4350 a190451ef_assy tin Reference circuit assembly diagram* (not to scale) Description C1, C2, C3 C4 C5 C6, C13 C7 C8, C9, C11, C16 C10 C12 C14 C15 Q1 QQ1 R1 R2 R3 R4 R5, R9 R6, R7 R8 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Ceramic capacitor, 1 µF Capacitor, 0.01 µF Ceramic capacitor, 10 pF Ceramic capacitor, 2.8 pF Capacitor, 0.02 µF Capacitor, 22 µF, 50 V Ceramic capacitor, 0.7 pF Transistor Voltage regulator Chip Resistor 1.2 k-ohms Chip Resistor 1.3 k-ohms Chip Resistor 2 k-ohms Potentiometer 2 k-ohms Chip Resistor 10 ohms Chip Resistor 1 k-ohms Chip Resistor 5.1 k-ohms di sc on Component Suggested Manufacturer Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Digi-Key ATC Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 445-1411-1-ND 200B 103 100B 100 100B 2R8 200B 203 PCE3374CT-ND 100B 0R7 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND P5.1KECT-ND *Gerber Files for this circuit available on request Data Sheet 7 of 10 Rev. 04, 2015-01-12 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36265-2 2X 7.11 [.280] (45° X 2.03 [.080]) s CL uc t D 2.59±0.51 [.102±.020] S pr od FLANGE 9.78 [.385] 15.34±0.51 [.604±.020] C L LID 10.16±0.25 [.400±.010] ue tin 2X R1.60 [R.063] d G 2x 7.11 [.280] 15.23 [.600] sc on 10.16±0.25 [.400±.010] SPH 1.57 [.062] 3.56±0.38 [.140±.015 0.0381 [.0015] -A- 20.31 [.800] 2 0 0 7 -1 1 -1 6 _ h -3 6 + 3 7 2 6 5 _ P O s .v s d _ h -3 6 2 6 5 2 - di 4X R1.52 [R.060] 1.02 [.040] Diagram Notes:—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 8 of 10 Rev. 04, 2015-01-12 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37265-2 (45° X 2.03 [.080]) CL 2.59±0.51 [.102±.020] 15.34±.51 [.604±.020] 10.16 [.400] pr od CL uc t LID 10.16±0.25 [.400±.010] FLANGE 10.16 [.400] s D ue d G sc on tin 2X 7.11 [.280] FLANGE 4X R0.63 [R.025] MAX LID 10.16±0.25 [.400±.010] SPH 1.57 [.062] di 3.56±.38 [.140±.015] | 0.025 [.001]| -A- S 10.16 [.400] 1.02 [.040] 0 7 1 1 1 9 _ h - 3 6 + 3 7 2 6 5 _ P O s _ h - 3 7 2 6 5 - 2 Diagram Notes:—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 04, 2015-01-12 PTFA190451E/F V4 Confidential, Limited Internal Distribution Revision History: 2015-01-12 2009-02-20, PTFA 190451E/F V1, Data Sheet Previous Version: Subjects (major changes since last revision) All Product Discontinued. Please see PD notes : PD_215_14. s Page Data Sheet uc t We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: pr od highpowerRF@infineon.com d To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2015-01-12 sc on Published by Infineon Technologies AG 81726 Munich, Germany tin ue GOLDMOS® is a registered trademark of Infineon Technologies AG. © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer di The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 04, 2015-01-12