PTFA211801E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
180 W, 2110 – 2170 MHz
Description
The PTFA211801E is a thermally-enhanced, 180-watt, internally
matched LDMOS FET intended for WCDMA applications. It is
characaterized for single- and two-carrier WCDMA operation from
2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFA211801E
Package H-36260-2
Features
Two-carrier WCDMA Drive-up
• Broadband internal matching
VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing
-25
30
Efficiency
-35
25
20
IM3
-40
15
-45
10
ACPR
-50
5
-55
Drain Efficiency (%)
-30
IM3 (dBc), ACPR (dBc)
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 45.5 dBm
- Linear Gain = 15.5 dB
- Efficiency = 27.5%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 180 W
- Efficiency = 52%
• Integrated ESD protection
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
0
34
36
38
40
42
44
46
48
• Pb-free and RoHS-compliant
Average Output Power (dBm)
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
14.5
15.5
—
dB
Drain Efficiency
hD
26
27.5
—
%
Intermodulation Distortion
IMD
—
–36
–34
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
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Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
CW Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 150 W average, ƒ = 2170 MHz
Characteristic
Gain Compression
Symbol
Min
Typ
Max
Unit
Gcomp
—
0.5
1.0
dB
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 140 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
15.5
—
dB
Drain Efficiency
hD
—
38.5
—
%
Intermodulation Distortion
IMD
—
–28
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
Drain Leakage Current
VDS = 63 V, VGS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.05
—
W
Operating Gate Voltage
VDS = 28 V, IDQ = 1.2 A
VGS
2.0
2.5
3.0
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 150 W CW)
RqJC
0.31
Data Sheet
2 of 9
Unit
°C/W
Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
Package Outline
Package Description
Shipping
PTFA211801E V5
H-36260-2
Thermally-enhanced slotted flange, single-ended
Tray
PTFA211801E V5 R250
H-36260-2
Thermally-enhanced slotted flange, single-ended
Tape & Reel
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA at Various Biases
Broadband Performance
VDD = 28 V, IDQ = 1.2 A, PO UT = 45.0 dBm CW
30
-35
25
1.3 A
1.4 A
-40
-45
1.2 A
1.1 A
-50
-5
Efficiency
-10
Return Loss
20
15
-15
-20
Gain
10
-25
5
-55
34
36
38
40
42
44
46
2070
48
-30
2090
2110
2130
2150
2170
2190
2210
Frequency (MHz)
Output Power, Avg. (dBm)
Data Sheet
Input Return Loss (dB)
-30
Gain (dB), Efficiency (%)
3rd Order IMD (dBc)
VDD = 28 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing, series show IDQ
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Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1.2 A, ƒ = 2170 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 2170 MHz
15
34
14
21
13
40
60
80
Gain
40
15
30
14
20
13
10
12
8
20
50
16
Gain (dB)
Gain
0
0
0
100 120 140 160 180
20
40
60
Output Power (W)
80
100 120 140 160 180
Output Power (W)
Two-tone Drive-up
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 28 V, IDQ = 1.2 A,
ƒ = 2140 MHz, tone spacing = 1 MHz
VDD = 28 V IDQ = 1.2 A, ƒ = 2140 MHz,
PO UT = 51 dBm PEP
-20
-20
-25
Intermodulation Distortion (dBc)
Intermodulation Distortion (dBc)
60
Efficiency
17
47
Drain Efficiency (%)
Gain (dB)
16
18
60
Efficiency
TCA S E = 25°C
TCA S E = 90°C
3rd Order
-30
-35
-40
5th
-45
7th
-50
-55
0
5
10
15
20
25
30
35
-25
40
Efficiency
-30
35
-35
IM5
-40
IM3
30
25
-45
20
-50
15
-55
10
IM7
-60
5
-65
0
38
40
Tone Spacing (MHz)
Data Sheet
45
Drain Efficiency (%)
17
42
46
50
54
Output Power, PEP (dBm)
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Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
Voltage Sweep
10
-45
5
ACPR Up
0
44
46
-45
30
31
32
10
33
Supply Voltage (V)
a211801ef
Nornalized to 50 Ohms
Z0 = 50 Ω
D
R -->
RD G
E NE
RA T
O
jX
2070
7.2
–0.5
1.5
2.3
2110
7.8
–0.2
1.4
2.6
2140
8.4
–0.0
1.4
2.8
2170
9.1
0.0
1.4
3.0
2210
10.0
–0.2
1.3
3.4
Z Source
2210 MHz
2070 MHz
0.1
0. 2
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Rev. 06, 2011-01-11
45
0.
05
0. 3
0.
Data Sheet
0.
4
0.5
R
0.4
jX
0.3
R
0.2
MHz
2070 MHz
0 .0
2210 MHz
E
W AV