PTFA212001FV4R250XTMA1

PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description uc t PTFA212001F Package H-37260-2 s PTFA212001E Package H-36260-2 pr od The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Features 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing Efficiency -33 tin 20 -38 IM3 -43 -48 -53 34 36 38 40 • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 30 V - Average output power = 50 W - Linear Gain = 15.8 dB - Efficiency = 28% - Intermodulation distortion = –35.5 dBc - Adjacent channel power = –40 dBc • Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB - Average output power = 70 W - Linear Gain = 15.5 dB - Efficiency = 34% - Adjacent channel power = –37 dBc • Typical CW performance, 2170 MHz, 30 V - Output power at P–1dB = 220 W - Efficiency = 54% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 5:1 VSWR @ 30 V, 200 W (CW) output power 25 42 10 5 ACPR 44 15 Drain Efficiency (%) -28 Thermally-enhanced packages, Pb-free and RoHS compliant ue d 30 sc on IM3 (dBc), ACPR (dBc) -23 • 0 46 48 di Average Output Power (dBm) All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet – Discontinued Products 1 of 11 Rev. 07, 2017-07-19 PTFA212001E PTFA212001F Confidential, Limited Internal Distribution RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Min Typ Max Unit Gain Gps 15.3 15.8 — dB Drain Efficiency ηD 26.5 28 — % Intermodulation Distortion IMD — –35.5 –34 dBc s Symbol uc t Characteristic Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) pr od VDD = 30 V, IDQ = 1.6 A, POUT = 200 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency d Intermodulation Distortion ue DC Characteristics Symbol Min Typ Max Unit Gps — 15.8 — dB ηD — 38.5 — % IMD — –28 — dBc Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 30 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA sc on tin Characteristic VGS = 10 V, V DS = 0.1 V RDS(on) — 0.05 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 1.6 A VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA di On-State Resistance Data Sheet – Discontinued Products 2 of 11 Rev. 07, 2017-07-19 PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Maximum Ratings Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 625 W s Parameter 3.57 TSTG Thermal Resistance (TCASE = 70°C, 200 W CW) RθJC –40 to +150 °C 0.28 °C/W pr od Storage Temperature Range Ordering Information W/°C uc t Above 25°C derate by Package Type Package Description Marking PTFA212001E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended PTFA212001E PTFA212001F V4 H-37260-2 Thermally-enhanced earless flange, single-ended PTFA212001F ue d Type and Version tin Typical Performance (data taken in a production test fixture) Broadband Performance VDD = 30 V, IDQ = 1600 mA, POUT = 50.0 dBm sc on Two-carrier WCDMA at Selected Biases VDD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ 1.4 A -40 -45 -50 1.8 A 1.6 A -55 35 37 39 41 43 45 -10 30 -15 25 Efficiency -20 20 15 10 2050 47 -5 Return Loss -25 -30 Gain 2090 2130 2170 2210 Input Return Loss (dB) 2.0 A Gain (dB), Efficiency (%) -35 35 di 3rd Order IMD (dBc) -30 -35 2250 Frequency (MHz) Average Output Power (dBm) *See Infineon distributor for future availability. Data Sheet – Discontinued Products 3 of 11 Rev. 07, 2017-07-19 PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier WCDMA Drive-up Power Sweep, CW Conditions VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, P/A R = 8.5 dB, 3.84 MHz BW Gain 15 30 Efficiency 14 20 13 0 40 80 120 160 10 240 200 40 -40 30 Efficiency -45 -50 20 10 ACPR -55 33 35 37 Drain Efficiency (%) 40 ACPR Up ACPR Low -35 pr od Gain (dB) 16 Adjacent Channel Power Ratio (dB) 50 17 Drain Efficiency (%) 60 TCASE = 90°C s TCASE = 25°C 18 uc t VDD = 30 V, IDQ = 1600 mA, ƒ = 2170 MHz 0 39 41 43 45 47 49 Average Output Power (dBm) tin ue d Output Power (W) Voltage Sweep 2-Tone Drive-up at Optimum IDQ IDQ = 1600 mA, ƒ = 2140 MHz, VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, tone spacing = 1 MHz IM3 Up -25 40 35 -30 30 25 -35 20 Gain -40 15 -45 10 23 25 27 29 31 33 -25 45 Efficiency -30 -35 40 35 IM3 -40 30 -45 25 IM5 -50 20 -55 15 -60 10 -65 5 IM7 -70 39 Supply Voltage (V) Data Sheet – Discontinued Products 50 41 43 Drain Efficiency (%) -20 -20 Intermodulation Distortion (dBc) 45 Efficiency di 3rd Order IMD (dBc) -15 50 Gain (dB), Drain Efficiency (%) -10 sc on tone spacing = 1 MHz, POUT (PEP) = 53 dBm 0 45 47 49 51 53 55 Output Power, PEP (dBm) 4 of 11 Rev. 07, 2017-07-19 PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R1 1.2K V QQ1 LM7805 V DD Q1 BCP56 s C3 0.001µF R6 5.1K V R8 2K V C4 4.7µF 16V R5 2K V C5 0.1µF L1 C13 8.2pF C6 7.5pF l2 C7 8.2pF l3 l4 l5 l6 C8 0.2pF l7 l9 R7 5.1K V C12 7.5pF l12 VD D C17 0.1µF C16 1µF l13 C27 0.5pF l14 C18 10µF 50V l15 C29 8.2pF l16 l17 C28 0.5pF C26 0.4pF l11 ue C11 0.1µF tin C10 4.7µF 16V C25 0.4pF DUT d l1 C15 1µF l10 l8 C9 0.9pF RF_IN C14 2.2µF RF_OUT 2 a 1 2 0 0 1 e f_ s c h R3 2K V uc t C2 0.001µF pr od R2 1.3K V L2 C19 8.2pF C20 2.2µF C21 1µF C22 1µF C23 0.1µF C24 10µF 50V Reference circuit schematic for ƒ = 2140 MHz l1 l2 l3 l4 l5 (taper) l6 l7 l8, l9 l10, l11 l12 l13 (taper) l14 (taper) l15 (taper) l16 l17 LDMOS Transistor Rogers RO4350 Electrical Characteristics at 2140 MHz1 Dimensions: L x W (mm) 0.042 0.048 0.026 0.059 0.062 0.015 0.028 0.136 0.254 0.071 0.019 0.026 0.026 0.029 0.107 di Microstrip sc on Circuit Assembly Information DUT PTFA212001E or PTFA212001F PCB 0.76 mm [.030"] thick, εr = 3.48 λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω / 6.9 Ω λ, 6.9 Ω λ, 6.9 Ω λ, 60.0 Ω λ, 51.2 Ω λ, 5.0 Ω λ, 5.0 Ω / 6.8 Ω λ, 6.8 Ω / 13.5 Ω λ, 13.5 Ω / 40.9 Ω λ, 40.9 Ω λ, 50.0 Ω 3.56 x 1.68 4.11 x 1.68 2.08 x 1.68 5.03 x 1.68 5.00 x 1.68 / 20.32 1.14 x 20.32 2.16 x 20.32 11.63 x 1.27 21.51 x 1.65 5.49 x 28.83 1.52 x 28.83 / 20.62 2.11 x 20.62 / 9.65 2.06 x 9.65 / 2.34 2.77 x 2.34 9.04 x 1.68 1 oz. copper Dimensions: L x W (in.) 0.140 x 0.066 0.162 x 0.066 0.082 x 0.066 0.198 x 0.066 0.197 x 0.066 / 0.800 0.045 x 0.800 0.085 x 0.800 0.458 x 0.050 0.847 x 0.065 0.216 x 1.135 0.060 x 1.135 / 0.812 0.083 x 0.812 / 0.380 0.081 x 0.380 / 0.092 0.109 x 0.092 0.356 x 0.066 1Electrical characteristics are rounded. Data Sheet – Discontinued Products 7 of 11 Rev. 07, 2017-07-19 PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Reference Circuit (cont.) RO4350_.030 V DD RO4350_.030 C13 C2 C1 C14 Q1 C3 C15 C16 R1 C5 R6 C6 R5 C4 C9 C7 C8 C10 L1 C18 R2 VDD s R8 QQ1 C25 C17 uc t R3 C27 RF_OUT RF_IN C11 C12 C23 pr od C28 C29 C26 VDD C24 L2 C21 C22 C19 R7 ue A212001IN_01 d C20 A212001out_01 a212001ef_assy Reference circuit assembly diagram* (not to scale) Description C1, C2, C3 C4, C10 C5, C11, C17, C23 C6, C12 C7, C13, C19, C29 C8 C9 C14, C20 C15, C16, C21, C22 C18, C24 C25, C26 C27, C28 L1, L2 Q1 QQ1 R1 R2 R3, R5 R4 R6, R7 R8 Capacitor, 0.001 µF Capacitor, 4.7 µF, 16 V Capacitor, 0.1 µF Ceramic capacitor, 7.5 pF Ceramic capacitor, 8.2 pF Ceramic capacitor, 0.2 pF Ceramic capacitor, 0.9 pF Capacitor, 2.2 µF Ceramic capacitor, 1 µF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 0.4 pF Ceramic capacitor, 0.5 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor 1.2 k-ohms Chip resistor 1.3 k-ohms Chip resistor 2 k-ohms not used Chip resistor 5.1 k-ohms Potentiometer 2 k-ohms di sc on tin Component Suggested Manufacturer P/N or Comment Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Digi-Key Digi-Key Garrett Electronics ATC ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key PCC1772CT-ND PCS3475CT-ND PCC104BCT-ND 100B 7R5 100B 8R2 600S 0R2 BT 600A 0R9 BT 445-1474-2-ND 445-1411-2-ND TPSE106K050R0400 100B 0R4 100B 0R5 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND Digi-Key Digi-Key P5.1KECT-ND 3224W-202ETR-ND * Gerber Files for this circuit available on request Data Sheet – Discontinued Products 8 of 11 Rev. 07, 2017-07-19 PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36260-2 45° X 2.03 [.080] 2X 12.70 [.500] 4X R 1.52 [R.060] C L 4.83±0.50 [.190±.020] S +0.10 FLANGE 13.72 [.540] C L [.520 +.004] –.006 G pr od LID 13.21 –0.15 uc t s D 23.37±0.51 [.920±.020] 2X R1.63 [R.064] ue d 27.94 [1.100] 22.35±0.23 [.880±.009] C L sc on tin SPH 1.57 [.062] 1.02 [.040] 4.11±0.38 [.162±.015] 0.0381 [.0015] -A34.04 [1.340] h - 3 6 + 3 7 2 6 0 - 2 _ 3 6 2 6 0 / 0 4 - 2 5 - 0 8 di Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet – Discontinued Products 9 of 11 Rev. 07, 2017-07-19 PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37260-2 2X 12.70 [.500] 45° X 2.031 [.080] CL uc t C L pr od 13.72 [.540] s 4.83±0.50 [.190±.020] D LID 13.21 +0.10 –0.15 [.520 +.004 ] –.006 23.37±0.51 [.920±.020] d G +0.381 ue 4X R0.508 –0.127 [R.020 +.015 ] –.005 sc on tin LID 22.35±0.23 [.880±.009] 1.02 [.040] S 4.11±0.38 [.162±.015] 0.0381 [.0015] -Ah - 3 6 + 3 7 2 6 0 - 2 _ 3 7 2 6 0 0 / 4 - 2 5 - 0 8 SPH 1.57 [.062] FLANGE 23.11 [.910] di Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet – Discontinued Products 10 of 11 Rev. 07, 2017-07-19 PTFA212001E/F Confidential, Limited Internal Distribution Revision History: 2017-07-19 2015-03-03, Data Sheet Previous Version: Subjects (major changes since last revision) Product Discontinued. s Page All Data Sheet uc t We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: pr od highpowerRF@infineon.com d To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2017-07-19 sc on Published by Infineon Technologies AG 81726 Munich, Germany tin ue GOLDMOS® is a registered trademark of Infineon Technologies AG. © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer di The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet – Discontinued Products 11 of 11 Rev. 07, 2017-07-19