PTFA220081M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor
8 W, 700 – 2200 MHz
Description
• Typical two-carrier WCDMA performance,
8 dB PAR
- POUT = 33 dBm Avg
- ACPR = –40 dBc
50
Efficiency
d
30
IMD 3rd
Efficiency (%)
40
en
de
IMD (dBc)
• Typical CW performance, 940 MHz, 28 V
- POUT = 40 dBm
- Efficiency = 59%
- Gain = 20 dB
fo
r
-10
ne
w
VDD = 28 V, IDQ = 100 mA,
ƒ1 = 939.5 MHz, ƒ2 = 940.5 MHz
-30
-40
20
IMD 5th
-60
35
36
37
38
39
m
34
m
-50
ig
n
Features
Two-tone Drive-up
-20
PTFA220081M
Package PG-SON-10
40
de
s
The PTFA220081M an unmatched 8-watt LDMOS FET suitable for
power amplifiers applications with frequencies from 700 MHz to 2200
MHz. This LDMOS transistor offers excellent gain, efficiency and
linearity performance in a small overmolded plastic package.
• Typical CW performance, 2140 MHz, 28 V
- POUT = 40 dBm
- Efficiency = 50%
- Gain = 15 dB
10
• Capable of handling 10:1 VSWR @ 28 V, 8 W
(CW) output power
0
• Integrated ESD protection
• Excellent thermal stability
41
• Pb-free and RoHS compliant
re
co
Output Power, PEP (dBm)
no
t
RF Characteristics
Two-tone Measurements (not subject to production test – verified by design / characterization in Infineon test fixture)
VDD = 28 V, IDQ = 100 mA, POUT = 8 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
17
—
dB
Drain Efficiency
hD
—
38
—
%
Intermodulation Distortion
IMD
—
–31
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test – verified by design / characterization in Infineon test fixture)
VDD = 28 V, IDQ = 100 mA, POUT = 8 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz
Min
Typ
Max
Unit
Gain
Gps
—
20.7
—
dB
Drain Efficiency
hD
—
39
—
%
Intermodulation Distortion
IMD
—
–30
—
dBc
Input Return Loss
IRL
—
20
—
dB
ig
n
Symbol
de
s
Characteristic
w
DC Characteristics
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
On-State Resistance
VGS = 10 V, VDS = 0.1 A
RDS(on)
—
1.10
—
W
Operating Gate Voltage
VDS = 28 V, IDQ = 100 mA
VGS
2.0
2.5
3.0
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
en
de
d
fo
r
ne
Characteristic
m
Maximum Ratings
Symbol
Value
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
175
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Thermal Resistance (TCASE = 70°C, 8 W DC )
RqJC
4.2
m
Parameter
no
t
re
co
Drain-Source Voltage
Unit
°C/W
Moisture Sensitivity Level
Level
Test Standard
Package Temperature
3
IPC/JEDEC J-STD-020
260
Unit
°C
Ordering Information
Type
Package Outline
Package Description
Shipping
PTFA220081M V4
PG-SON-10
Molded plastic, SMD
Tape & Reel, 500 pcs
Data Sheet
2 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Typical Performance, 940 MHz
Two-carrier WCDMA 3GPP Drive-up
Two-carrier WCDMA 3GPP
VDD = 28 V, IDQ = 100 mA, ƒ = 940 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
VDD = 28 V, IDQ = 100 mA, ƒ = 940 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
60
0
55
ig
n
21.5
Efficiency
19.5
20
31
32
33
34
35
36
37
38
ACPR
-40
fo
r
30
25
15
-50
10
29
35
IMD Low
-30
Efficiency
19.0
IMD Up
-20
30
39
5
31
32
33
34
35
36
37
38
39
Output Power (dBm)
en
de
d
Output Power (dBm)
Drain Efficiency (%)
30
45
de
s
20.0
-10
w
40
IMD & ACPR (dBc)
20.5
Drain Efficiency (%)
Gain (dB)
50
ne
Gain
21.0
Two-tone Drive-up
m
Power Sweep, CW
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 150 mA,
ƒ1 = 939.5 MHz, ƒ2 = 940.5 MHz
60
no
t
Gain (dB)
20.0
50
Efficiency
19.6
40
920 MHz
940 MHz
960 MHz
19.2
22
30
18.8
35
36
37
38
39
40
40
20
30
20
Efficiency
18
10
33
41
Output Power (dBm)
Data Sheet
Gain
19
20
34
50
21
Gain (dB)
Gain
20.4
70
Drain Efficiency (%)
20.8
Efficiency (%)
re
co
m
VDD = 28 V, IDQ = 100 mA
34
35
36
37
38
39
40
41
Output Power, PEP (dBm)
3 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Typical Performance, 940 MHz (cont.)
Two-tone Gain & Input Return Loss
VDD = 28 V, IDQ = 100 mA, Spacing = 100 kHz,
PEP = 8 W
-6
-9
-15
19.0
-18
18.5
-21
IRL
18.0
-24
17.5
-27
de
s
19.5
w
-12
ne
Gain
20.0
Input Return Loss (dB)
-30
17.0
880
900
920
940
960
980
fo
r
Power Gain (dB)
20.5
ig
n
21.0
1000
m
Broadband Circuit Impedance
en
de
d
Frequency (MHz)
D
Z Load
re
co
m
Z Source
Z0 = 50 Ω
G
Frequency
MHz
no
t
S
Z Source W
Z Load W
R
jX
R
jX
869
1.54
7.20
14.11
9.10
894
1.49
6.60
14.91
8.70
920
1.59
5.70
13.83
9.10
940
1.61
5.10
10.83
10.70
960
1.61
5.10
13.34
9.80
1930
1.91
–2.10
5.59
6.20
1990
2.11
–1.70
4.21
5.20
2110
2.45
–1.00
4.43
5.10
2170
2.30
–1.00
4.25
5.60
Data Sheet
4 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 920 – 960 MHz
PORT
3
R103
2000 Ohm
S5
8
C103
1000 pF
TL104
TL105
1
R104
10 Ohm
2
S2
L1
22 nH
TL106
TL108
3
3
TL102
TL101
2
TL114
TL111
1
2
3
TL112
1
2
TL103
R105
1.3 Ohm
TL107
2
GATE_DUT
1
C107
16 pF
7
5
C102
1000 pF
VDD
S4
2
C
3
E
4
1
B
fo
r
TL204
6
ne
Reference circuit input schematic for ƒ = 920 – 960 MHz
TL205
1
NC
3
w
C104
16 pF
R102
1200 Ohm
ig
n
TL110
a080304m_960 MHz_bdin_06-03-2010
3
4
C106
5.6 pF
C101
1000 pF
R101
1300 Ohm
3
1
3
2
de
s
C105
68 pF
Out
NC
S3
R106
510 Ohm
R107
10 Ohm
TL113
In
4
TL109
RF_IN
4
TL224
TL218
2
1
3
TL206
d
C205
4710000 pF
2
TL213
en
de
TL225
3
1
TL217
TL216
C204
10000000 pF
1
m
re
co
2
3
C202
68 pF
m
VDD
TL223
TL202
2
3
1
TL203
TL214
TL201
2
1
TL215
a080304m_960 MHz_bdout_06-03-2010
3
2
3
1
no
t
TL207
R201
0 Ohm
TL208
TL212
TL211
DRAIN_DUT
TL209
2
TL210
3
TL222
1
TL221
1
2
3
TL219
C203
68 pF
TL220
RF_OUT
C201
3.6 pF
Reference circuit output schematic for ƒ = 920 – 960 MHz
Data Sheet
5 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 920 – 960 MHz (cont.)
Electrical Characteristics at 960 MHz
Transmission
Electrical
Line
Characteristics
Dimensions: mm
Dimensions: mils
Input
0.004 λ, 51.98 Ω
W1 = 1.087, W2 = 1.087, W3 = 0.813
W1 = 43, W2 = 43, W3 = 32
TL102
0.024 λ, 51.98 Ω
W = 1.087, L = 4.445
W = 43, L = 175
TL103
0.011 λ, 51.98 Ω
W = 1.087, L = 2.057
W = 43 L = 81
W = 1.524
W = 60
W = 40, L = 60
0.008 λ, 54.17 Ω
W = 1.016, L = 1.524
TL106
0.027 λ, 41.75 Ω
W = 1.524, L = 5.080
TL107
0.010 λ, 25.04 Ω
W = 3.048, L = 1.778
TL108
0.003 λ, 41.75 Ω
W = 1.524, L = 0.508
TL109
0.007 λ, 41.75 Ω
W = 60, L = 200
W = 120, L = 70
W = 1.524, L = 1.270
ne
TL110
de
s
TL105
w
TL104
ig
n
TL101
W = 60, L = 20
W = 60, L = 50
W1 = 3.048, W2 = 0.762, W3 = 3.048, W4 = 0.762
W1 = 120, W2 = 30, W3 = 120, W4 = 30
0.005 λ, 51.98 Ω
W1 = 1.087, W2 = 1.087, W3 = 1.016
W1 = 43, W2 = 43, W3 = 40
TL113
0.017 λ, 51.98 Ω
W = 1.087, L = 3.264
W = 43, L = 129
TL114
0.070 λ, 51.98 Ω
W = 1.087, L = 13.259
TL201
0.008 λ, 41.75 Ω
W1 = 1.524, W2 = 1.524, W3 = 1.524
W1 = 60, W2 = 60, W3 = 60
TL202, TL225
0.007 λ, 47.12 Ω
W1 = 1.270, W2 = 1.270, W3 = 1.270
W1 = 50, W2 = 50, W3 = 50
TL203
0.060 λ, 47.12 Ω
d
W = 43, L = 522
0.007 λ, 4.74 Ω
W = 50, L = 447
W1 = 20, W2 = 780, Offset = 280
W = 20.119, L = 1.270
W = 792, L = 50
W1 = 0.001, W2 = 0.001, Offset = 0.011
W1 = 1, W2 = 50, Offset = 416
m
TL206
W = 1.270, L = 11.361
W1 = 0.020, W2 = 0.020, Offset = 0.007
m
TL204
en
de
Output
TL205
fo
r
TL111, TL112
0.003 λ, 41.75 Ω
W = 1.524, L = 0.508
W = 60, L = 20
TL208
0.008 λ, 41.75 Ω
W = 1.524, L = 1.524
W = 60, L = 60
TL209
0.004 λ, 25.04 Ω
W1 = 3.048, W2 = 3.048, W3 = 0.762
W1 = 120, W2 = 120, W3 = 30
W1 = 1.087, W2 = 3.048
W1 = 43, W2 = 120
0.010 λ, 25.04 Ω
W = 3.048, L = 1.778
W = 120, L = 70
0.007 λ, 63.89 Ω
W = 0.762, L = 1.270
W = 30, L = 50
W1 = 0.001, W2 = 0.005, Offset = -0.002
W1 = 1, W2 = 208, Offset = -79
0.044 λ, 41.75 Ω
W = 1.524, L = 8.204
W = 60, L = 323
TL215
0.007 λ, 41.75 Ω
W1 = 1.524, W2 = 1.524, W3 = 1.270
W1 = 60, W2 = 60, W3 = 50
TL216
0.007 λ, 47.12 Ω
W = 1.270, L = 1.267
W = 50, L = 50
TL217
0.032 λ, 47.12 Ω
W = 1.270, L = 5.918
W = 50, L = 233
TL218
0.032 λ, 15.92 Ω
W = 5.283, L = 5.687
W = 208, L = 224
TL219
0.016 λ, 51.98 Ω
W = 1.087, L = 2.946
W = 43, L = 116
TL220
0.017 λ, 51.98 Ω
W = 1.087, L = 3.264
W = 43, L = 129
TL221
0.004 λ, 51.98 Ω
W1 = 1.087, W2 = 1.087, W3 = 0.813
W1 = 43, W2 = 43, W3 = 32
TL222
0.104 λ, 51.98 Ω
W = 1.087, L = 19.736
W = 43, L = 777
TL223
0.011 λ, 47.12 Ω
W1 = 1.270, W2 = 1.270, W3 = 2.032
W1 = 50, W2 = 50, W3 = 80
TL224
0.000 λ, 144.35 Ω
W1 = 0.025, W2 = 0.025, W3 = 0.025
W1 = 1, W2 = 1, W3 = 1
TL211
TL212
no
t
TL210
re
co
TL207
TL213
TL214
Data Sheet
6 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 920 – 960 MHz (cont.)
R101
C101
VDD
C102
ig
n
C103
R103
C204
S4
S5
de
s
C205
R102
C202
w
R106
R104
S2
d
L1
R201
en
de
R107
R105
fo
r
ne
S3
DUT
RF_IN
C106
C104
RF_OUT
C201
C107
C203
no
t
re
co
m
m
C105
PTFA220081M_01_CUS
960 MHz
RO4350, .020
(73)
� � � �� �� � � � � � � � � � � � � �� � �� �
Reference circuit assembly diagram (not to scale)*
* Gerber Files for this circuit available on request
Data Sheet
7 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 920 – 960 MHz (cont.)
Circuit Assembly Information
DUT
PTFA220081M
LDMOS Transistor
PCB
LTN/PTFA220081M–9
0.508 mm [.020"] thick, er = 3.48
Rogers 4350, 1 oz. copper
Component
Description
Suggested Manufacturer
P/N
C101, C102, C103
Chip capacitor, 1000 pF
Digi-Key
PCC1772CT-ND
C104, C107
Chip capacitor, 16 pF
ATC
C105
Chip capacitor, 68 pF
ATC
C106
Chip capacitor, 5.6 pF
ATC
L1
Inductor, 22 nH
ATC
R101
Resistor, 1300 W
Digi-Key
R102
Resistor, 1200 W
Digi-Key
R103
Resistor, 2000 W
Digi-Key
R104
Resistor, 10 W
Digi-Key
R105
Resistor, 1.3 W
Digi-Key
R106
Resistor, 510 W
Digi-Key
P510ECT-ND
R107
Resistor, 10 W
Digi-Key
P10GCT-ND
S2
EMI filter, 2 - 4 A, 0.1 - 2.2 μF
Murata
NFM18PS105R0J3
S3
Potentiometer, 2k W
S4
Transistor
S5
Voltage Regulator
d
fo
r
ne
w
de
s
ATC100A160JW150X
ATC100A680JW150X
ATC100A5R6CW150X
ATC0805WL22JT
P1.3KGCT-ND
P1.2KGCT-ND
P2.0KECT-ND
P10ECT-ND
P1.3GET-ND
Digi-Key
3224W-202ECT-ND
Digi-Key
BCP56
National Semiconductor
LM7805
en
de
m
Output
ig
n
Input
Chip capacitor, 3.6 pF
ATC
ATC100A3R6CW150X
C202, C203
Chip capacitor, 68 pF
ATC
ATC100A680JW150X
C204
Capacitor, 10 µF
Digi-Key
587-1352-1-ND
Chip capacitor, 4.71 µF
Digi-Key
PCS3475CT-ND
Resistor, 0 W
Digi-Key
P0.0ECT-ND
no
t
R201
re
co
C205
m
C201
Data Sheet
8 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz
Two-carrier WCDMA 3GPP Drive-up
Two-carrier WCDMA 3GPP
VDD = 28 V, IDQ = 100 mA, ƒ = 2140 MHz
3GPP WCDMA, P/AR = 8:1,
10 MHz carrier spacing, BW 3.84 MHz
16.5
20
16.0
10
Efficiency
15.5
28
29
30
31
32
33
34
35
30
IMD Low
-30
20
-40
10
ACPR
-50
0
27
IMD Up
-20
w
30
ne
17.0
40
Efficiency
27
36
0
29
30
31
32
33
34
35
36
Output Power (dBm)
en
de
d
Output Power (dBm)
28
Drain Efficiency (%)
-10
50
de
s
40
fo
r
Gain (dB)
0
IMD & ACPR (dBc)
Gain
17.5
50
Drain Efficiency (%)
18.0
ig
n
VDD = 28 V, IDQ = 100 mA, ƒ = 2140 MHz,
3GPP WCDMA, P/AR = 8:1,
10 MHz carrier spacing, BW 3.84 MHz
CW
Gain & Efficiency vs. Output Power
m
Power Sweep, CW
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 100 mA, ƒ = 2140 MHz
50
no
t
19
55
18
17
45
40
16
35
15
30
14
25
13
Gain (dB)
20
17.5
33
34
35
36
37
38
39
40
55
16.5
45
16.0
35
Efficiency
2110 MHz
2140 MHz
2170 MHz
15.0
41
31
Output Power (dBm)
Data Sheet
17.0
15.5
20
32
65
Gain
60
Drain Efficiency (%)
21
65
32
33
34
35
36
37
25
Drain Efficiency (%)
m
re
co
Gain +85°C
Gain +20°C
Gain -30°C
Ef f iciency +85°C
Ef f iciency +20°C
Ef f iciency -30°C
22
Gain (dB)
VDD = 28 V, IDQ = 100 mA
15
38
39
40
41
Output Power (dBm)
9 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz (cont.)
Two-tone Drive-up
Two-tone Drive-up
VDD = 28 V, IDQ = 100 mA,
ƒ1 = 2139.5 MHz, ƒ2 = 2140.5 MHz
30
Efficiency
15.5
IMD3
10
35
36
37
38
39
40
45
40
35
30
25
Efficiency
15.0
20
fo
r
-50
34
16.5
16.0
20
33
17.0
ne
-40
Gain
17.5
41
35
36
37
38
39
40
41
Output Power, PEP (dBm)
en
de
d
Output Power, PEP (dBm)
Efficiency (%)
-30
ig
n
40
50
de
s
-20
18.0
w
50
Gain (dB)
-10
Efficiency (%)
IMD (dBc)
VDD = 28 V, IDQ = 100 mA,
ƒ1 = 2139.5 MHz, ƒ2 = 2140.5 MHz
Two-tone Broadband
Efficiency & IMD vs. Frequency
m
Two-tone Broadband
Gain & Return Loss vs. Frequency
VDD = 28 V, IDQ = 100 mA, Average PEP = 8 W,
Spacing = 100 kHz
Efficiency
IMD3
30
25
-35
-40
15
10
2120
17
-25
IMD5
2080
-20
-30
20
2040
18
2160
2200
Gain (dB)
35
no
t
Efficiency (%)
40
-15
IMD (dBc)
45
-2
Gain
16
-4
15
-6
14
-8
RL
-45
13
-50
12
-10
-12
2040
2240
Frequency (MHz)
Data Sheet
0
Return Loss (dB)
re
co
m
VDD = 28 V, IDQ = 100 mA, Average PEP = 8 W,
Spacing = 100 kHz
2080
2120
2160
2200
2240
Frequency (MHz)
10 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz (cont.)
Intermodulation Distortion vs.
Tone Spacing
Intermodulation Distortion vs.
Output Power
VDD = 28 V, IDQ = 100 mA, ƒ = 2140 MHz,
PEP = 8 W
VDD = 28 V, IDQ = 100 mA,
ƒ1 = 2139.5 MHz, ƒ2 = 2140.5 MHz
3rd Order
3rd Order
de
s
-30
-35
-40
-45
-50
5th
-50
ne
5th
-40
w
IMD (dBc)
IMD (dBc)
-30
ig
n
-20
-25
7th
7th
-60
0
10
20
30
40
50
60
70
fo
r
-55
35
80
37
38
39
40
41
Output Power, PEP (dBm)
en
de
d
Tone Spacing (MHz)
36
m
Two-tone Gain vs. Output Power
18.0
no
t
Power Gain (dB)
IDQ = 120 mA
17.5
re
co
m
VDD = 28 V, ƒ1 = 2139.5 MHz, ƒ2 = 2140.5 MHz
IDQ = 100 mA
17.0
IDQ = 80 mA
16.5
16.0
33
34
35
36
37
38
39
40
41
Output Power (dBm)
Data Sheet
11 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 2110 – 2170 MHz
PORT
3
R104
2000 Ohm
S5
8
C103
1000 pF
TL104
1
2
S2
L1
22 nH
TL105
TL108
3
3
R106
510 Ohm
TL102
TL111
2
TL114
TL113
1
2
3
TL115
TL112
2
3
1
1
TL103
2
TL110
TL107
2
3
3
1
GATE_DUT
1
a080304m_2170 MHz_bdin_06-03-2010
3
4
C109
0.6 pF
C110
6.2 pF
C105
6.2 pF
TL216
TL215
TL205
en
de
3
1
m
VDD
C204
10 pF
m
re
co
C101
1000 pF
VDD
R103
1200 Ohm
S4
2
C
3
E
4
1
B
TL219
C205
10000000 pF
TL204
5
TL217
d
TL223
TL224
7
fo
r
Reference circuit input schematic for ƒ = 2110 – 2170 MHz
2
6
w
C107
3.6 pF
4
4
1
NC
3
ne
TL101
RF_IN
C108
4.1 pF
C102
1000 pF
R101
1300 Ohm
R105
10 Ohm
C111
6.2 pF
2
de
s
C104
6.2 pF
Out
NC
4
TL109
C106
12 pF
In
S3
ig
n
TL106
R102
10 Ohm
4
TL226
2
3
1
TL225
TL213
2
3
1
TL214
TL218
TL212
2
TL220
1
2
3
1
3
no
t
TL210
R201
0 Ohm
TL211
C202
0.3 pF
TL222
TL201
DRAIN_DUT
TL202
2
TL203
3
1
TL209
TL221
a080304m_2170 MHz_bdout_06-03-2010
2
TL208
3
1
1
2
3
TL206
C201
12 pF
TL207
RF_OUT
C203
3.6 pF
Reference circuit output schematic for ƒ = 2110 – 2170 MHz
Data Sheet
12 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 2110 – 2170 MHz (cont.)
Electrical Characteristics at 2170 MHz
Transmission
Electrical
Line
Characteristics
Dimensions: mm
Dimensions: mils
Input
0.054 λ, 51.98 W
W = 1.087, L = 4.509
W = 43, L = 178
TL102
0.150 λ, 51.98 W
W = 1.087, L = 12.548
W = 43, L = 494
TL103
0.027 λ, 51.98 W
W = 1.087, L = 2.261
W = 43, L = 89
W = 1.524
W = 60
W = 60, L = 200
0.062 λ, 41.75 W
W = 1.524, L = 5.080
TL106
0.018 λ, 54.17 W
W = 1.016, L = 1.524
TL107
0.022 λ, 25.04 W
W = 3.048, L = 1.778
TL108
0.006 λ, 41.75 W
W = 1.524, L = 0.508
TL109
0.015 λ, 41.75 W
W = 120, L = 70
ne
W1 = 3.048, W2 = 0.762, W3 = 3.048, W4 = 0.762
0.028 λ, 51.98 W
W = 60, L = 50
W1 = 120, W2 = 30, W3 = 120, W4 = 30
W1 = 1.087, W2 = 1.087, W3 = 1.016
W1 = 43, W2 = 43, W3 = 40
W1 = 43, W2 = 40, W3 = 43, W4 = 40
W = 1.087, L = 2.311
W = 43, L = 91
W1 = 1.087, W2 = 1.016, W3 = 1.087, W4 = 1.016
W1 = 43, W2 = 40, W3 = 43, W4 = 40
en
de
d
TL115
W = 60, L = 20
W1 = 1.087, W2 = 1.016, W3 = 1.087, W4 = 1.016
fo
r
0.012 λ, 51.98 W
TL112
TL114
W = 40, L = 60
W = 1.524, L = 1.270
TL110
TL111, TL113
de
s
TL105
w
TL104
ig
n
TL101
Output
TL201
0.022 λ, 25.04 W
TL202
0.010 λ, 25.04 W
W = 3.048, L = 1.778
W1 = 3.048, W2 = 3.048, W3 = 0.762
W1 = 120, W2 = 120, W3 = 30
W1 = 1.087, W2 = 3.048
W1 = 43, W2 = 120
m
TL203
W = 120, L = 70
0.071 λ, 47.12 W
W = 1.270, L = 5.918
W = 50, L = 233
TL205
0.072 λ, 15.92 W
W = 5.283, L = 5.687
W = 208, L = 224
TL206
0.230 λ, 51.98 W
W = 1.087, L = 19.202
W = 43, L = 756
TL207
0.039 λ, 51.98 W
W = 1.087, L = 3.264
W = 43, L = 129
TL208
0.012 λ, 51.98 W
W1 = 1.087, W2 = 1.087, W3 = 1.016
W1 = 43, W2 = 43, W3 = 40
TL209
0.032 λ, 51.98 W
W = 1.087, L = 2.642
W = 43, L = 104
TL210
0.006 λ, 41.75 W
W = 1.524, L = 0.508
W = 60, L = 20
0.018 λ, 41.75 W
W = 1.524, L = 1.524
W = 60, L = 60
0.018 λ, 41.75 W
W1 = 1.524, W2 = 1.524, W3 = 1.524
W1 = 60, W2 = 60, W3 = 60
0.015 λ, 47.12 W
W1 = 1.270, W2 = 1.270, W3 = 1.270
W1 = 50, W2 = 50, W3 = 50
TL212
TL213
TL214
re
co
no
t
TL211
0.035 λ, 47.12 W
TL215
TL216
m
TL204
0.017 λ, 4.74 W
TL217
W = 1.270, L = 2.896
W = 50, L = 114
W1 = 0.020, W2 = 0.020, Offset = 0.007
W1 = 20, W2 = 780, Offset = 280
W = 20.119, L = 1.270
W = 792, L = 50
W1 = 0.001, W2 = 0.005, Offset = -0.002
W1 = 1, W2 = 208, Offset = -79
TL218
0.099 λ, 41.75 W
W = 1.524, L = 8.204
W = 60, L = 323
TL219
0.015 λ, 47.12 W
W = 1.270, L = 1.267
W = 50, L = 50
TL220
0.015 λ, 41.75 W
W1 = 1.524, W2 = 1.524, W3 = 1.270
W1 = 60, W2 = 60, W3 = 50
TL221
0.008 λ, 51.98 W
W1 = 1.087, W2 = 1.087, W3 = 0.635
W1 = 43, W2 = 43, W3 = 25
TL222
0.015 λ, 63.89 W
W = 0.762, L = 1.270
W = 30, L = 50
W1 = 0.001, W2 = 0.001, Offset = 0.011
W1 = 1, W2 = 50, Offset = 416
TL223
Table continued next page
Data Sheet
13 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 2110 – 2170 MHz (cont.)
Electrical Characteristics at 2170 MHz (cont.)
Electrical
Dimensions: mm
Dimensions: mils
Line
Characteristics
TL224
TL225
0.015 λ, 47.12 W
W1 = 1.270, W2 = 1.270, W3 = 1.270
W1 = 50, W2 = 50, W3 = 50
0.111 λ, 47.12 W
W = 1.270, L = 9.225
TL226
W = 50, L = 363
0.015 λ, 47.12 W
W1 = 1.270, W2 = 1.270, W3 = 1.270
W1 = 50, W2 = 50, W3 = 50
ig
n
Transmission
ne
w
de
s
Reference Circuit, 2110 – 2170 MHz (cont.)
R101
C103
R103
fo
r
S4
VDD
C205
en
de
S5
R104
C102
d
C101
R106
re
co
m
m
S3
RF_IN
no
t
C106
C204
R102
R105
C104 C111
S2
R201
1
C202
C201
C203
C107
C108
C109 C110 C105
PTFA220081M_01_CUS
RF_OUT
DUT
2170 MHz
RO4350, .020
(73)
� � � � �� � � � � � � � � � � � � �� � �� �
Reference circuit assembly diagram (not to scale)*
* Gerber Files for this circuit available on request
Data Sheet
14 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 2110 – 2170 MHz (cont.)
Circuit Assembly Information
DUT
PTFA220081M
LDMOS Transistor
PCB
LTN/PTFA220081M
0.508 mm [.020"] thick, er = 3.48
Rogers 4350, 1 oz. copper
Component
Description
Suggested Manufacturer
P/N
C101, C102, C103
Chip capacitor, 1000 pF
ATC
PCC1772CT-ND
C104, C105, C110, C111
Chip capacitor, 6.2 pF
ATC
C106
Chip capacitor, 12 pF
ATC
C107
Chip capacitor, 3.6 pF
ATC
C108
Chip capacitor, 4.1 pF
ATC
C109
Chip capacitor, 0.6 pF
ATC
L1
Inductor, 22 nH
ATC
R101
Resistor, 1300 W
Digi-Key
R102
Resistor, 10 W
Digi-Key
R103
Resistor, 1200 W
Digi-Key
R104
Resistor, 2000 W
Digi-Key
P2.0KECT-ND
R105
Resistor, 10 W
Digi-Key
P10GCT-ND
R106
Resistor, 510 W
S2
EMI filter, 2 - 4 A, 0.1 - 2.2 μF
S3
Potentiometer, 2k W
S4
Transistor
S5
Voltage Regulator
ig
n
Input
fo
r
ne
w
de
s
ATC100A6R2CW150X
ATC100A120FJW150X
ATC100A3R6CW150X
ATC100A4R1CW150X
ATC100A0R6CW150X
ATC0805WL22JT
P1.3KGCT-ND
P10ECT-ND
P1.2KGCT-ND
P510ECT-ND
NFM18PS105R0J3
en
de
d
Digi-Key
Digi-Key
3224W-202ECT-ND
BCP56
National Semiconductor
LM7805
m
Digi-Key
Digi-Key
m
Output
Chip capacitor, 12 pF
ATC
ATC100A120CW150X
C202
Chip capacitor, 0.3 pF
ATC
ATC100A0R3CW150X
Chip capacitor, 3.6 pF
ATC
ATC100A3R6CW150X
Chip capacitor, 10 pF
ATC
ATC100A100CW150X
Capacitor, 10 µF
Digi-Key
587-1352-1-ND
R201
Resistor, 0 W
Digi-Key
P0.0ECT-ND
C203
C204
Data Sheet
no
t
C205
re
co
C201
15 of 17
Rev. 06, 2017-07-18
PTFA220081M
Confidential, Limited Internal Distribution
Package Outline Specifications
Package PG-SON-10
0.54
[.021] 2 PLACES
4.00
[.157]
7
8
w
2.37
[.093]
.815
[.0321]
S
ne
2.97
[.117]
10
d
fo
r
4.00
[.157]
9
de
s
6
ig
n
5X .320
[.0126] 2 PLACES
en
de
5X .515
[.0203] 2 PLACES
INDEX
MARKING
4
3
2
1
4X 0.65
[.026] 2 PLACES
0.30
[.012]
m
TOP VIEW
5
INDEX
MARKING
3.40
[.134]
1.42
[.056]
re
co
m
BOTTOM VIEW
PG-SON-10_po_02-19-2010
0.38
[.015] BOTH SIDES
0.05 [.002]
no
t
SIDE VIEW
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.1 [.004] unless specified otherwise.
4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm.
5. Pins: S = source, 1 – 5 = gate, 6 – 10 = drain.
6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
16 of 17
Rev. 06, 2017-07-18
PTFA220081M V4
Confidential, Limited Internal Distribution
Revision History:
2017-07-18
Previous Version:
2011-04-01, Data Sheet
Page
Subjects (major changes since last revision)
Not recommended for new design
We Listen to Your Comments
de
s
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
ig
n
Data Sheet
highpowerRF@infineon.com
m
m
re
co
Edition 2017-07-18
Published by
Infineon Technologies AG
81726 Munich, Germany
en
de
d
fo
r
ne
w
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
© 2010 Infineon Technologies AG
All Rights Reserved.
no
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Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
17 of 17
Rev. 06, 2017-07-18
