PTFB082817FHV1XWSA1

PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Two-carrier WCDMA 3GPP Drive-up • Broadband internal matching • Enhanced for use in DPD error correction systems -20 40 -25 35 -30 30 Efficiency 25 IMD Low -40 20 -45 15 -50 10 ACPR -55 Drain Efficiency (%) IMD, ACPR (dBc) VDD = 30 V, IDQ = 2.15 A, ƒ = 821 MHz, 3GPP WCDMA signal, PAR = 8:1 dB, 10 MHz carrier spacing, BW = 3.84 MHz -35 5 IMD Up -60 0 34 36 38 40 42 44 46 48 50 PTFB082817FH Package H-34288-4/2 • Typical single-carrier WCDMA performance at 821 MHz, 30 V - Average output power = 50 W - Linear Gain = 19 dB - Efficiency = 35 % - Adjacent channel power = –35 dBc • Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers • Integrated ESD protection • Capable of handling 10:1 VSWR @ 30 V, 280 W (CW) output power • Pb-Free and RoHS compliant 52 Average Output Power (dBm) RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 2.15 A, POUT = 60 W average, ƒ = 821 MHz, 3GPP signal, 10 MHz spacing, channel bandwidth = 3.84 MHz, peak/average = 8 : 1 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 18.5 19.3 — dB Drain Efficiency hD 28 29 — % Intermodulation Distortion IMD — –36 –34 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 13 Rev. 02, 2010-12-13 PTFB082817FH Confidential, Limited Internal Distribution DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 28 V, IDQ = 2.15 A VGS 2.5 3.9 4.5 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 250 W CW) RqJC 0.215 °C/W Ordering Information Type and Version Package Outline Package Description Shipping PTFB082817FH V1 H-34288-4/2 Ceramic open-cavity, earless flange Tray PTFB082817FH V1 R250 H-34288-4/2 Ceramic open-cavity, earless flange Tape & Reel Data Sheet 2 of 13 Rev. 02, 2010-12-13 PTFB082817FH Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP Drive-up Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.15 A, ƒ = 821 MHz, 3GPP WCDMA signal, PAR = 8:1 dB, 10 MHz carrier spacing, BW = 3.84 MHz VDD = 30 V, IDQ = 2.15 A, 3GPP WCDMA, PAR=8:1, 10 MHz carrier spacing, BW 3.84 MHz 20 IMD (dBc) -30 -35 821 821 806 806 791 791 Lower Upper Lower Upper Lower Upper 40 Gain 35 19 Gain (dB) ƒ= ƒ= ƒ= ƒ= ƒ= ƒ= -40 -45 30 25 18 20 15 17 10 -50 5 Efficiency 16 -55 34 36 38 40 42 44 46 48 0 34 50 Efficiency (%) -25 36 Output Power avg. (dBm) 38 40 42 44 46 48 50 Average Output Power (dBm) Two-tone Broadband Performance Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 2.15 A, PO UT = 51.8 dBm VDD = 30 V, IDQ = 2.15 A, tone spacing = 1 MHz 0 -20 Return Loss -10 Efficiency 40 -20 IMD3 30 -30 20 -40 Gain 10 ƒ = 821 MHz IMD 3rd Order (dBc) 50 Return Loss (dB) / IMD (dBc) Gain (dB) / Efficiency (%) 60 791 806 821 -40 -60 39 836 Frequency (MHz) Data Sheet ƒ = 791 MHz -50 -50 776 ƒ = 806 MHz -30 41 43 45 47 49 51 53 55 57 Output Power, PEP (dBm) 3 of 13 Rev. 02, 2010-12-13 PTFB082817FH Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive-up Two-tone Drive-up VDD = 30 V, IDQ = 2.15 A, ƒ1 = 821 MHz, ƒ2 = 820 MHz VDD = 30 V, IDQ = 2.15 A, ƒ1 = 821 MHz, ƒ2 = 820 MHz -35 50 40 19.5 45 35 19.0 30 3rd Order IMD 18.5 35 18.0 30 17.5 25 17.0 20 16.5 15 -40 25 -45 20 -50 15 -55 10 16.0 10 5 15.5 5 0 15.0 Efficiency -60 -65 39 41 43 45 47 49 51 Output Power, PEP (dBm) 53 55 Efficiency 0 39 41 Gain -25 18 20 IMD (dBc) 30 Efficiency (%) 40 19 10 +85°C 39 41 43 45 51 53 55 3rd Order -35 5th -45 7th 39 57 41 43 45 47 49 51 53 55 57 Output Power, PEP (dBm) Output Power, PEP (dBm) Data Sheet 55 -75 0 49 53 -65 –30°C 47 51 -55 +25°C 16 49 -15 50 Efficiency 47 VDD = 30 V, IDQ = 2.15 A, ƒ1 = 821 MHz, ƒ2 = 820 MHz 21 17 45 Intermodulation Distortion vs. Output Power (PO UT - max 3rd order IMD @ -30 dBc) VDD = 30 V, IDQ = 2.15 A, ƒ1 = 821 MHz, ƒ2 = 820 MHz 20 43 Output Power, PEP (dBm) Two-tone Drive-up (over temperature) Gain (dB) 40 Gain Efficiency (%) IMD (dBc) -30 20.0 Gain (dB) -25 45 Efficiency (%) -20 4 of 13 Rev. 02, 2010-12-13 PTFB082817FH Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier WCDMA Drive-up Single-carrier WCDMA Drive-up V DD = 30 V, IDQ = 2.15 A, ƒ = 821 MHz, V DD = 30 V, IDQ = 2.15 A, ƒ = 806 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 30 Gain 18 10 Efficiency -10 PARC @ .01% CCDF 10 -30 6 -50 ACP 2 38 40 42 44 46 48 50 18 10 Efficiency 14 -50 ACP -70 36 52 38 40 16 20 Efficiency 12 0 PARC @ .01% CCDF -20 -40 4 ACP 42 44 46 48 50 Adjacent Channel Power Ratio (dB) Gain Efficiency (%) / ACP (dBc) PARC (dB) / PARC Gain (dB) 60 40 46 48 50 52 54 -20 45 40 Efficiency 35 -30 30 25 -40 ACPR Low 20 15 -50 10 ACPR Up 5 -60 -60 52 0 36 54 38 40 42 44 46 48 50 52 Average Output Power (dBm) Average Output Power (dBm) Data Sheet 44 Single-carrier WCDMA Drive-up 24 38 42 VDD = 30 V, IDQ = 2.15 A, ƒ = 821 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 43% clipping, PAR = 7.5:1 dB, 3.84 MHz BW 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 36 40 Average Output Power (dBm) Single-carrier WCDMA Drive-up 0 -30 6 V DD = 30 V, IDQ = 2.15 A, ƒ = 791 MHz, 8 -10 PARC @ .01% CCDF 10 Average Output Power (dBm) 20 30 Gain 2 -70 36 22 Drain Efficiency (%) 14 PARC (dB) / PARC Gain (dB) 22 50 Efficiency (%) / ACP (dBc) 26 50 Efficiency (%) / ACP (dBc) PARC (dB) / PARC Gain (dB) 26 5 of 13 Rev. 02, 2010-12-13 PTFB082817FH Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source W Frequency Z Load W MHz R jX R jX 776 0.92 –1.83 0.96 –1.55 791 0.89 –1.75 0.91 –1.49 806 0.86 –1.68 0.85 –1.42 821 0.83 –1.60 0.79 –1.34 836 0.79 –1.52 0.74 –1.25 D Z Source Z Load G S See next page for reference circuit information Data Sheet 6 of 13 Rev. 02, 2010-12-13 PTFB082817FH Confidential, Limited Internal Distribution Reference Circuit S4 8 7 3 4 1 C801 100000 pF R801 100 Ohm R803 10 Ohm S2 C804 100000 pF 2 3 TL139 TL126 C107 4710000 pF TL138 3 1 1 B 2 TL137 3 1 2 3 R804 1300 Ohm R102 5100 Ohm C805 100000 pF C106 4.7 pF R101 10 Ohm TL136 3 1 C105 10000 pF TL134 3 2 TL135 3 1 2 1 2 TL129 3 1 2 VDD TL141 C108 56 pF 4 S E C104 20000 pF R805 1200 Ohm C 2 R802 1000 Ohm TL110 5 S1 1 C103 33 pF C802 100000 pF 6 2 C803 100000 pF TL140 R103 10 Ohm TL120 TL111 TL115 TL131 2 3 1 TL122 TL125 TL123 TL108 TL109 C109 12 pF TL128 RF_IN TL104 TL132 TL107 C112 56 pF TL130 TL133 TL118 2 TL121 TL114 TL116 TL112 1 TL103 TL142 TL127 2 TL113 3 1 2 2 3 1 1 b 0 8 2 8 1 7 f h _ b d i n _ 1 2 - 1 4 - 2 0 1 0 3 3 4 C101 5.1 pF TL101 C111 2.2 pF TL102 C102 5.6 pF C110 12 pF e r = 3.48 H = 20 mil RO/RO4350B1 2 3 TL117 1 GATE DUT (Pin G) TL119 TL105 TL124 TL106 Reference circuit input schematic for ƒ = 821 MHz TL210 C219 1000000 pF C220 10000000 pF C221 10000000 pF TL211 2 C217 4710000 pF TL202 TL209 3 2 3 C218 4710000 pF 2 3 1 1 TL217 TL240 2 3 1 C202 10000000 pF 3 2 1 1 4 DUT (Pin V) TL212 DRAIN DUT (Pin D) VDD C201 10000 pF TL222 TL224 C210 2.2 pF C207 1.3 pF C206 3.6 pF TL232 TL219 TL229 TL208 TL203 TL220 2 3 1 TL231 2 3 1 4 4 TL225 TL228 2 TL221 C204 56 pF TL223 TL205 TL204 TL216 RF_OUT 3 1 4 TL233 TL218 TL230 C209 2.2 pF C208 1.3 pF C205 3.6 pF TL214 TL215 DUT (Pin V) TL227 C203 4.7 pF 2 3 1 TL226 C222 10000000 pF TL239 TL234 TL235 TL236 1 3 2 1 2 TL201 TL206 TL237 2 3 1 1 2 TL238 3 3 4 C216 10000000 pF C215 10000000 pF C212 1000000 pF C214 4710000 pF C237 4710000 pF TL207 e 1 b 0 8 2 8 1 7 f h _ b d o u t _ 1 2 - 1 4 - 2 0 1 0 3 2 TL213 C211 10000000 pF VDD r = 3.48 H = 20 mil RO/RO4350B1 Reference circuit output schematic for ƒ = 821 MHz Data Sheet 7 of 13 Rev. 02, 2010-12-13 PTFB082817FH Confidential, Limited Internal Distribution Reference Circuit (cont.) Description DUT PCB PTFB082817FH 0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 821 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Input TL101 0.005 λ, 51.46 Ω W = 1.105, L = 1.168 W = 44, L = 46 TL102 0.008 λ, 51.46 Ω W1 = 1.105, W2 = 1.105, W3 = 1.778 W1 = 44, W2 = 44, W3 = 70 TL103 W1 = 17.780, W2 = 1.778, W3 = 17.780, W4 = 2.032 W1 = 700, W2 = 70, W3 = 700, W4 = 80 TL104, TL105, TL106, TL107 W = 1.105 W = 44 TL108, TL109, TL110, W = 0.762 W = 30 TL111, TL131 TL112 0.004 λ, 5.33 Ω W1 = 17.780, W2 = 17.780, W3 = 0.762 W1 = 700, W2 = 700, W3 = 30 TL113 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500 TL114 W1 = 1.676, W2 = 17.780 W1 = 66, W2 = 700 TL115 0.002 λ, 63.89 Ω W = 0.762, L = 0.508 W = 30, L = 20 TL116 0.043 λ, 5.33 Ω W = 17.780, L = 8.636 W = 700, L = 340 TL117 0.036 λ, 51.46 Ω W = 1.105, L = 8.001 W = 44, L = 315 TL118 0.007 λ, 39.10 Ω W = 1.676, L = 1.511 W = 66, L = 60 TL119 0.023 λ, 51.46 Ω W = 1.105, L = 5.055 W = 44, L = 199 TL120 0.006 λ, 63.89 Ω W = 0.762, L = 1.270 W = 30, L = 50 TL121 0.054 λ, 39.10 Ω W = 1.676, L = 11.722 W = 66, L = 462 TL122 0.013 λ, 63.89 Ω W = 0.762, L = 2.921 W = 30, L = 115 TL123 0.085 λ, 63.89 Ω W = 0.762, L = 19.050 W = 30, L = 750 TL124 0.005 λ, 51.46 Ω W = 1.105, L = 1.016 W = 44, L = 40 TL125 0.002 λ, 63.89 Ω W = 0.762, L = 0.559 W = 30, L = 22 TL126 0.006 λ, 26.81 Ω W = 2.794, L = 1.270 W = 110, L = 50 TL127 0.038 λ, 5.33 Ω W = 17.780, L = 7.645 W = 700, L = 301 TL128 0.034 λ, 51.46 Ω W = 1.105, L = 7.574 W = 44, L = 298 TL129 0.001 λ, 26.81 Ω W = 2.794, L = 0.254 W = 110, L = 10 TL130 0.006 λ, 39.10 Ω W = 1.676, L = 1.270 W = 66, L = 50 W1 = 1.676, W2 = 1.105 W1 = 66, W2 = 44 0.009 λ, 39.10 Ω W1 = 1.676, W2 = 1.676, W3 = 2.032 W1 = 66, W2 = 66, W3 = 80 TL134, TL135, TL136, 0.012 λ, 26.81 Ω TL137 W1 = 2.794, W2 = 2.794, W3 = 2.540 W1 = 110, W2 = 110, W3 = 100 TL138, TL139 0.010 λ, 26.81 Ω W1 = 2.794, W2 = 2.794, W3 = 2.032 W1 = 110, W2 = 110, W3 = 80 TL140 0.009 λ, 63.89 Ω W1 = 0.762, W2 = 0.762, W3 = 2.032 W1 = 30, W2 = 30, W3 = 80 TL141 0.011 λ, 63.89 Ω W = 0.762, L = 2.492 W = 30, L = 98 TL142 0.010 λ, 5.33 Ω W1 = 17.780, W2 = 17.780, W3 = 2.032 W1 = 700, W2 = 700, W3 = 80 TL132 TL133 Data Sheet 8 of 13 Rev. 02, 2010-12-13 PTFB082817FH Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 821 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics TL201, TL202 W1 = 3.810, W2 = 2.540, W3 = 3.810, W4 = 2.540 W1 = 150, W2 = 100, W3 = 150, W4 = 100 TL203, TL231 W1 = 16.510, W2 = 2.032, W3 = 16.510, W4 = 2.032 W1 = 650, W2 = 80, W3 = 650, W4 = 80 Output TL204, TL205, TL206, W = 1.105 TL207 W = 44 TL208 W1 = 16.510, W2 = 1.829, W3 = 16.510, W4 = 1.829 W1 = 650, W2 = 72, W3 = 650, W4 = 72 TL209, TL236, TL237, 0.012 λ, 20.93 Ω TL240 W1 = 3.810, W2 = 3.810, W3 = 2.540 W1 = 150, W2 = 150, W3 = 100 TL210, TL235 0.018 λ, 16.47 Ω W1 = 5.080, W2 = 5.080, W3 = 3.810 W1 = 200, W2 = 200, W3 = 150 TL211 0.000 λ, 20.93 Ω W1 = 3.810, W2 = 3.810, W3 = 0.025 W1 = 150, W2 = 150, W3 = 1 TL212 W1 = 16.510, W2 = 12.700 W1 = 650, W2 = 500 TL213 0.005 λ, 51.46 Ω W = 1.105, L = 1.143 W = 44, L = 45 TL214 0.011 λ, 51.46 Ω W = 1.105, L = 2.489 W = 44, L = 98 TL215 0.051 λ, 51.46 Ω W = 1.105, L = 11.303 W = 44, L = 445 TL216 0.014 λ, 51.46 Ω W = 1.105, L = 3.025 W = 44, L = 119 TL217, TL238 0.063 λ, 20.93 Ω W = 3.810, L = 13.183 W = 150, L = 519 TL218, TL219, TL229, 0.000 λ, 36.77 Ω W = 1.829, L = 0.025 W = 72, L = 1 TL230, TL232, TL233 TL220 0.036 λ, 5.71 Ω W = 16.510, L = 7.214 W = 650, L = 284 TL221 0.007 λ, 39.10 Ω W = 1.676, L = 1.524 W = 66, L = 60 TL222, TL239 0.014 λ, 16.47 Ω W = 5.080, L = 2.896 W = 200, L = 114 TL223 0.009 λ, 39.10 Ω W = 1.676, L = 2.032 W = 66, L = 80 TL224 0.033 λ, 5.71 Ω W = 16.510, L = 6.604 W = 650, L = 260 W1 = 16.510, W2 = 1.676 W1 = 650, W2 = 66 TL225 TL226 0.031 λ, 51.46 Ω W = 1.105, L = 6.782 W = 44, L = 267 TL227 0.009 λ, 51.46 Ω W1 = 1.105, W2 = 1.105, W3 = 2.032 W1 = 44, W2 = 44, W3 = 80 TL228 0.094 λ, 5.71 Ω W = 16.510, L = 18.796 W = 650, L = 740 TL234 0.000 λ, 20.93 Ω W1 = 3.810, W2 = 3.810, W3 = 0.025 W1 = 150, W2 = 150, W3 = 1 Data Sheet 9 of 13 Rev. 02, 2010-12-13 PTFB082817FH Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFB082817FH Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower VDD C802 C803 R804 C805 S4 S1 R801 C103 C104 R101 R803 C219 C218 C220 C217 C221 C804 S2 + R802 C109 C201 R103 C108 VDD 10 µF C801 + R805 C202 C207 C206 C210 C107 R102 C106 C105 C204 RF_IN C111 C112 C203 RF_OUT C101 C209 C209 C208 C205 VDD + 10 µF C222 C102 C110 C211 C237 C216 C214 C215 C212 PTFB082817_IN_01 RO4350, .020 PTFB082817_OUT_01 RO4350, .020 (62) b082817fh_CD_12-13-2010 Reference circuit assembly diagram (not to scale) Data Sheet 10 of 13 Rev. 02, 2010-12-13 PTFB082817FH Confidential, Limited Internal Distribution Reference Circuit (cont.) Components Information Component Description Suggested Manufacturer P/N Input C101 Chip capacitor, 5.1 pF ATC ATC100B5R1CW C102 Chip capacitor, 5.6 pF ATC ATC100B5R6CW C103 Chip capacitor, 33 pF ATC ATC100B330JW C104 Capacitor, 20000 pF Digi-Key ATC200B203MW C105 Capacitor, 10000 pF Digi-Key ATC200B103MW C106 Chip capacitor, 4.7 pF ATC ATC100B4R7CT C107 Chip capacitor, 4.71 μF ATC 493-2372-2-ND C108, C112 Chip capacitor, 56 pF ATC ATC100B560JT C109 Chip capacitor, 12 pF ATC ATC100B120FW500XB C110 Chip capacitor, 12 pF ATC ATC100B120JW C111 Chip capacitor, 2.2 pF ATC ATC100B2R2CW C801, C804 Chip capacitor, 0.1 μF ATC PCC104BCT-ND C802, C803, C805 Chip capacitor, 0.1 μF ATC PCC1772CT-ND R101, R103, R803 Resistor, 10 W Digi-Key P10ECT-ND R102 Resistor, 5100 W Digi-Key P5.1KECT-ND R801 Resistor, 100 W Digi-Key P10ECT-ND R802 Resistor, 1000 W Digi-Key P1.0KECT-ND R804 Resistor, 1300 W Digi-Key P1.3KGCT-ND R805 Resistor, 1200 W Digi-Key P1.2KGCT-ND S1 Transistor Digi-Key BCP5616TA-ND S2 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND S4 Voltage Regulator Digi-Key LM78L05ACM-ND Capacitor, 10000 pF Digi-Key ATC200B103MW Output C201, C222 C202, C211 Chip capacitor, 10 μF ATC 281M5002106k C203 Chip capacitor, 4.7 pF ATC ATC100B4R7CT C204 Chip capacitor, 56 pF ATC ATC100B560JT C205, C206 Chip capacitor, 3.6 pF ATC ATC100B3R6CW C207, C208 Chip capacitor, 1.3 pF ATC ATC100B1R3CW C209, C210 Chip capacitor, 2.2 pF ATC ATC100B2R2CW C212, C219 Chip capacitor, 1 μF ATC 478-3993-2-ND C214, C217, C218, C237 Chip capacitor, 4.71 μF ATC 490-1864-2-ND C215, C216, C220, C221 Capacitor, 10 μF Digi-Key 587-1818-2-ND Data Sheet 11 of 13 Rev. 02, 2010-12-13 PTFB082817FH Confidential, Limited Internal Distribution Package Outline Specifications Package H-34288-4/2 22.860 [.900] 45° X 2.032 [45° X .080] 2X 5.080 [.200] 2X 1.143 [.045] C L 2X 30° V D V 9.779 [.385] 9.398 [.370] C L 4X R0.508+.381 -.127 R.020+.015 -.005 19.558±.510 [.770±.020] G ] [ 4.889±.510 [.192±.020] 2X 12.700 [.500] 4.039+.254 -.127 .159+.010 -.005 22.352±.200 [.880±.008] [ ] C 66065-A0003- C743- 01-0027 H- 34288- 4_ 2 .dwg 1.575 [.062] (SPH) C L 1.016 [.040] 23.114 [.910] S Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate; V = VDD. 5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 12 of 13 Rev. 02, 2010-12-13 PTFB082817FH V1 Confidential, Limited Internal Distribution Revision History: 2010-12-13 Previous Version: 2010-11-02, Advance Data Sheet Page Subjects (major changes since last revision) All Data sheet reflects released product specifications Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2010-12-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 13 of 13 Rev. 02, 2010-12-13