PTFB191501EV1R250XTMA1

PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description -20 40 Efficiency 15 IMD Low sc on -55 31 33 35 37 39 41 43 45 5 0 47 s • Typical CW performance, 1990 MHz, 30 V - Output power at P–1dB = 150 W - Efficiency = 55% • Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power • Pb-free, RoHS-compliant 10 ACPR -60 Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 35 W - Linear gain = 18 dB - Efficiency = 30% - Intermodulation distortion = –35 dBc d ue 20 Efficiency (%) 25 -50 Broadband internal matching • 35 tin IMD (dBc) -35 -45 • 30 IMD Up -40 pr od VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -30 PTFB191501F Package H-37248-2 Features Two-carrier WCDMA Drive-up -25 PTFB191501E Package H-36248-2 uc t The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. 49 di Output Power (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 1985 MHz, ƒ2 = 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 18 — dB Drain Efficiency ηD — 30 — % Intermodulation Distortion IMD — –35 — dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 15 Rev. 03, 2015-01-14 PTFB191501E PTFB191501F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 150 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency ηD 42 44 — % Intermodulation Distortion IMD — –28 dBc Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.08 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 1.2 A VGS 2.4 2.9 3.4 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings ue Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 200 W CW) RθJC 0.29 °C/W di sc on Parameter Symbol pr od Conditions d Characteristic –30 tin DC Characteristics s Symbol uc t Characteristic Ordering Information Type and Version Package Type Package Description Shipping PTFB191501E V1 H-36248-2 Thermally-enhanced slotted flange, single-ended Tray PTFB191501E V1 R250 H-36248-2 Thermally-enhanced slotted flange, single-ended Tape & Reel 250 pcs PTFB191501F V1 H-37248-2 Thermally-enhanced earless flange, single-ended Tray PTFB191501F V1 R250 H-37248-2 Thermally-enhanced earless flange, single-ended Tape & Reel 250 pcs *See Infineon distributor for future availability. Data Sheet 2 of 15 Rev. 03, 2015-01-14 PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP Drive-up Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 1.20 A, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -40 s 19 Gain 18 17 pr od -45 -50 40 uc t -35 Gain (dB) Drain Efficiency (%) -30 50 20 1990 MHz Low 1990 MHz Up 1960 MHz Low 1960 MHz Up 1930 MHz Low 1930 MHz Up 30 20 Efficiency 10 16 -55 0 15 -60 31 33 35 37 39 41 43 45 47 31 49 33 35 37 Drain Efficiency (%) -25 39 41 43 45 47 49 Output Power (dBm) tin ue d Output Power (dBm) CW Power Sweep Gain & Efficiency vs. Output Power Two-tone Broadband Performance VDD = 30 V, IDQ = 1.20 A, POUT = 63 W 45 di Gain (dB) 55 Gain 18 17 16 Gain / Efficiency (dB / %) 19 60 65 35 25 Efficiency 15 Drain Efficiency (%) 20 15 14 43 45 47 49 51 50 45 -15 Efficiency 40 35 -10 -20 -25 IMD3 30 -30 -35 25 -40 Gain -45 15 -50 1890 1910 1930 1950 1970 1990 2010 2030 53 Output Power (dBm) Data Sheet -5 IRL 20 5 41 55 Return Loss (dB), IMD (dBc) sc on VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz Frequency (MHz) 3 of 15 Rev. 03, 2015-01-14 PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive-up Two-tone Drive-up VDD = 30 V, IDQ = 1.20 A, VDD = 30 V, IDQ = 1.20 A, ƒ1 = 1990 MHz, ƒ2 = 1989 MHz ƒ 1 = 1990 MHz, ƒ2 = 1989 MHz -35 35 -40 30 IMD3 -45 25 -50 20 -55 15 -60 10 5 -65 40 42 44 46 48 50 52 54 Output Power, PEP (dBm ) 55 Gain 19 18 45 35 Efficiency 17 pr od 40 Gain (dB) IMD (dBc) 45 Efficiency -30 Efficiency (%) -25 20 25 16 15 15 40 42 44 Efficiency (%) 50 s 55 -20 uc t -15 5 46 48 50 52 54 tin ue d Output Power, PEP (dBm) Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 1.20 A, Tone Spacing = 1 MHz VDD = 30 V, IDQ = 1.20 A, ƒ 1 = 1990 MHz, ƒ2 = 1989 MHz sc on Two-tone Drive-up at Selected Frequencies -20 -20 3rd 1990 MHz -30 -30 IMD (dBc) 1930 MHz -40 di IMD (dBc) 1960 MHz -50 -60 5th -40 7th -50 -60 -70 41 43 45 47 49 51 -70 53 40 Output Power, PEP (dBm) Data Sheet 45 50 55 Output Power, PEP (dBm) 4 of 15 Rev. 03, 2015-01-14 PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Typical Performance (cont.) CW Performance Gain & Efficiency vs. Output Power CW Performance Gain vs. Output Power VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz VDD = 30 V, ƒ = 1990 MHz 19 21 18 30 17 20 Gain 10 16 s uc t 40 18 IDQ = 1.20 A IDQ = 0.80 A 17 pr od 19 Power Gain (dB) 50 Drain Efficiency (%) 20 Gain (dB) Efficiency –10 °C 25 °C 85 °C IDQ = 1.40 A 60 16 43 44 45 46 47 48 49 50 51 52 53 42 Output Power (dBm) 44 46 48 50 52 54 tin ue d Output Power (dBm) Gate-Source Voltage vs. Case Temperature Voltage normalized to typical gate voltage. Series show current. sc on Single-carrier WCDMA VDD = 30 V, IDQ = 1.20A, f = 1990 MHz 3GPP_WCDMA, PAR = 8dB, BW 3.84MHz -20 40 1.03 -40 20 -50 10 ACP up ACP low -60 Drain Efficiency (%) 30 di ACP (dBc) -30 Normalized Bias Voltage Efficiency 0 31 33 35 37 39 41 43 45 47 1.01 1.00 0.40 A 1.53 A 2.67 A 3.80 A 4.93 A 6.07 A 0.99 0.98 0.97 0.96 0.95 49 -20 Output Power (dBm) Data Sheet 1.02 0 20 40 60 80 100 Case Temperature (°C) 5 of 15 Rev. 03, 2015-01-14 PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Reference Circuit 8 1 In C802 100000 pF C106 10000000 pF TL115 4 3 NC 3 6 TL121 TL117 TL119 s 1 2 1 1 3 1 R102 5100 Ohm 2 2 3 3 C102 1000000 pF 2 TL122 C103 20000 pF TL123 Er=4.5 H=30 mil TMM/TMM4 TL104 X PORT RF_IN 3 2 TL109 TL111 C101 10 pF R103 10 Ohm TL126 TL125 TL120 TL124 TL110 TL127 TL128 pr od 3 1 TL107 TL108 TL112 1 R801 1000 Ohm C803 100000 pF S1 4 S 3 E C105 10 pF TL118 TL129 B 3 S3 uc t R101 2000 Ohm 5 2 C 1 R804 1300 Ohm C104 20000 pF 7 C801 100000 pF R803 1200 Ohm 2 Out NC 2 1 TL116 R802 1000 Ohm S2 VGS1 TL113 TL106 TL130 C107 0.7 pF TL102 TL103 TL114 TL101 TL105 3 2 3 1 2 1 1 5 0 1 e f - v 1 _ B D _ i n _ 0 8 - 3 0 - 0 9 GATE DUT PORT 2 Pin 1 ue d b1 9 TL242 TL237 TL234 1 2 3 TL245 TL220 TL240 sc on TL241 tin Reference circuit input schematic for ƒ = 1990 MHz TL223 TL230 TL227 1 TL229 TL224 2 1 3 2 1 TL226 2 3 3 VDD1 C210 20000 pF C208 1000000 pF C212 10000000 pF C206 10 pF TL210 C201 0.7 pF TL213 TL208 TL201 TL211 2 di DRAIN PORT DUT Pin 1D TL203 TL219 3 1 2 TL204 TL205 TL215 TL202 3 1 1 TL206 TL216 C204 10 pF TL207 TL217 TL218 TL246 2 1 3 4 2 3 4 TL212 C202 0.7 pF TL214 TL247 C203 0.6 pF C213 0.6 pF TL248 PORT RF_OUT 2 X TL209 C205 10 pF C209 20000 pF TL243 TL235 TL236 TL244 TL238 TL221 3 2 TL239 TL222 TL231 1 C207 10000000 pF C211 1000000 pF TL232 TL228 3 2 1 TL225 3 2 1 9 1 5 0 1 e f - v 1 _ B D _ o u t _ 0 8 - 3 0 - 0 TL233 3 2 b 1 1 9 VDD2 Reference circuit output schematic for ƒ = 1990 MHz Data Sheet 7 of 15 Rev. 03, 2015-01-14 PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Reference Circuit (cont.) VDD R802 C801 C802 S3 C105 R102 C102 C103 RF_IN C206 S2 s R801 C803 VDD uc t R101 R804 R803 S1 C210 C208 C201 R103 C107 C212 C204 pr od C106 C104 C101 C202 RF_OUT C213 C203 C207 C211 C209 VDD sc on tin ue d C205 b 1 9 1 5 0 1 e f - v 1 _ C D _ 9 - 2 -0 9 Reference circuit assembly diagram (not to scale)* di Circuit Assembly Information DUT PTFB191501E or PTFB191501F INPUT PCB 0.762 mm [.030"] thick, εr = 4.5 OUTPUT PCB 0.762 mm [.030"] thick, εr = 4.5 LDMOS Transistor TMM 4 TMM 4 2 oz. copper 2 oz. copper *Gerber files for this circuit available on request Data Sheet 8 of 15 Rev. 03, 2015-01-14 PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Reference Circuit (cont.) Components List Suggested Manufacturer Part Number Chip capacitor Chip capacitor Chip capacitor Chip capacitor Capacitor, 10 µF, 35 V Chip capacitor Chip capacitor 10 pF 1000000 pF 20000 pF 10 pF 10000000 pF 0.7 pF 100000 pF ATC ATC ATC ATC Digi-Key ATC ATC ATC100B100FW500XB 445-1411-2-ND ATC100B102FW50XB ATC100B100FW500XB 399-1655-2-ND Tantalum ATC100B0R7BW500XB PCC104BCT-ND Resistor Resistor Resistor Resistor Resistor Resistor Transistor Voltage regulator 2000 ohm 5100 ohm 10 ohm 1000 ohm 1200 ohm 1300 ohm S3 Potentiometer 2k ohms Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Infineon National Semiconductor Digi-Key Output C201 C202 C203 C204 C205 C206 C207 C208 C209 C210 C211 C212 C213 Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Capacitor, 10 µF, 35 V Chip capacitor Chip capacitor Chip capacitor Chip capacitor Capacitor, 10 µF, 35 V Chip capacitor Data Sheet tin 0.7 pF 0.7 pF 0.6 pF 10 pF 10 pF 10 pF 10000000 pF 1000000 pF 20000 pF 20000 pF 1000000 pF 10000000 pF 0.6 pF sc on di uc t pr od d Input C101 C102 C103, C104 C105 C106 C107 C801, C802, C803 R101 R102 R103 R801, R802 R803 R804 S1 S2 Comment s Value ue Schematic ID Component Type P2.0KECT-ND P5.1KECT-ND P100ECT P1.0KECT-ND P1.2KGECT-ND P1.3KGECT-ND BCP56 LM7805 3224W-202ECT-ND ATC 100B0R7BW500XB ATC 100B0R7BW500XB ATC 100B0R6BW500XB ATC 100B100FW500XB ATC 100B100FW500XB ATC 100B100FW500XB Garrett Electronics TPSE106K050R0400 ATC 445-1411-2-ND ATC 100B102FW50XB ATC 100B102FW50XB ATC 445-1411-2-ND Garrett Electronics TPSE106K050R0400 ATC 100B0R6BW500XB 9 of 15 Tantalum Tantalum Rev. 03, 2015-01-14 PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 1990 MHz Electrical 1st/4th Dimension 2nd Dimension W2 6.87 Ω 0.241 λ W1 17.780 mm 132.58 Ω 0.000 λ W MLIN TL103 MSTEP TL104 MLIN 50.98 Ω 0.312 λ W 1.397 mm TL105 MLIN 6.87 Ω 0.029 λ W 17.780 mm TL106 MLIN 11.38 Ω 0.019 λ W 10.160 mm TL107 MLIN 34.60 Ω 0.016 λ W 2.540 mm TL108 MLIN 40.30 Ω 0.180 λ W TL109 MLIN 34.60 Ω 0.016 λ W TL110 MBENDA$ TL111 MSTEP 50.98 TL112 MSTEP 34.60 TL113 MSTEP TL114 MTEE TL115 MTEE TL116 17.780 mm 700 mils 0.025 mm 1 mils W2 17.780 mm 700 mils 55 mils L 25.527 mm 1005 mils 700 mils L 2.159 mm 85 mils 400 mils L 1.397 mm 55 mils 100 mils L 1.270 mm 50 mils 2.032 mm 80 mils L 14.478 mm 570 mils 2.540 mm 100 mils L 1.270 mm 50 mils W 0.889 mm 35 mils 0.031 W1 1.397 mm 55 mils W2 2.540 mm 100 mils 0.025 W1 2.540 mm 100 mils W2 2.032 mm 80 mils 40.30 0.126 W1 2.032 mm 80 mils W2 10.160 mm 400 mils 6.87 Ω 0.241 λ W1 17.780 mm 700 mils W2 17.780 mm 700 mils W3 0.889 mm 35 mils 20.46 Ω 0.066 λ W1 5.080 mm 200 mils W2 5.080 mm 200 mils W3 6.350 mm 250 mils MTEE 53.88 Ω 0.015 λ W1 1.270 mm 50 mils W2 1.270 mm 50 mils W3 3.048 mm 120 mils TL117 MTEE 30.35 Ω 0.038 λ W1 3.048 mm 120 mils W2 3.048 mm 120 mils W3 2.540 mm 100 mils TL118 MTEE 40.30 Ω 0.025 λ W1 2.032 mm 80 mils W2 2.032 mm 80 mils W3 3.048 mm 120 mils TL119 MTEE 30.35 Ω 0.038 λ W1 3.048 mm 120 mils W2 3.048 mm 120 mils W3 2.540 mm 100 mils TL120 MTEE$ 65.15 Ω 0.011 λ W1 0.889 mm 35 mils W2 0.889 mm 35 mils W3 2.032 mm 80 mils TL121 MLIN 30.35 Ω 0.019 λ W 3.048 mm 120 mils L 1.524 mm 60 mils TL122 MLIN 40.30 Ω 0.000 λ W 2.032 mm 80 mils L 0.025 mm 1 mils TL123 MLIN 65.15 Ω 0.030 λ W 0.889 mm 35 mils L 2.540 mm 100 mils TL124 MLIN 65.15 Ω 0.043 λ W 0.889 mm 35 mils L 3.556 mm 140 mils TL125 MLIN 65.15 Ω 0.216 λ W 0.889 mm 35 mils L 18.034 mm 710 mils TL126 MLIN 46.07 Ω 0.011 λ W 1.651 mm 65 mils L 0.889 mm 35 mils TL127 MLIN 46.07 Ω 0.011 λ W 1.651 mm 65 mils L 0.889 mm 35 mils TL128 MLIN 65.15 Ω 0.023 λ W 0.889 mm 35 mils L 1.905 mm 75 mils TL129 MLIN 30.35 Ω 0.019 λ W 3.048 mm 120 mils L 1.524 mm 60 mils TL130 MBENDA W 0.889 mm 35 mils Data Sheet 400 mils L d pr od W1 10.160 mm tin 1 mils sc on di 700 mils 0.025 mm 10 of 15 W3 2.032 mm 80 mils s MTEE TL102 uc t TL101 3rd Dimension ue Schematic ID Rev. 03, 2015-01-14 PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 1990 MHz MCROSS TL202 MTEE TL203 MTAPER TL204 MTAPER 1st/4th Dimension 2nd Dimension W1 25.654 mm 1010 mils W2 1.270 mm W4 1.270 mm 50 mils W3 25.654 mm W3 2.032 mm 80 mils L 3.683 mm 145 mils 0.000 λ W1 1.778 mm 70 mils W2 1.778 mm 70 mils 4.88 Ω 0.026 λ W1 25.654 mm 1010 mils W2 9.144 mm 360 mils 53.88 Ω 9.144 mm380 mils 0.082 λ W1 9.144 mm 53.88 Ω MTAPER 50 mils 132.58 Ω 5.388 Ω TL205 3rd Dimension 53.88 Ω W2 360 mils W2 0.082 λ W1 2.794 mm 132.58 Ω 110 mils W2 MSTEP W1 1.778 mm 70 mils TL207 MSTEP W1 2.540 mm 100 mils TL208 MLIN 43.96 Ω 0.031 λ W 25.654 mm TL209 MLIN 32.33 Ω 0.022 λ W TL210 MLIN 12.48 Ω 0.037 λ TL211 MLIN 4.88 Ω TL212 MLIN 43.96 Ω TL213 MLIN TL214 W2 2.794 mm L 110 mils 2.794 mm110 mils W2 L 1.778 mm 70 mils 1.778 mm70 mils L W2 2.540 mm W2 1.397 mm 1010 mils L 0.025 mm 1 mils 1.270 mm 50 mils L 6.731 mm 265 mils W 1.270 mm 50 mils L 6.731 mm 265 mils 0.125 λ W 25.654 mm 1010 mils L 1.905 mm 75 mils 0.022 λ W 0.025 mm 1 mils L 0.025 mm 1 mils 132.58 Ω 0.000 λ W 0.025 mm MLIN 40.30 Ω 0.000 λ W 2.032 mm d TL215 MLIN 43.96 Ω 0.066 λ W 1.778 mm 70 mils TL216 MLIN 34.60 Ω 0.016 λ W 2.540 mm 100 mils TL217 MLIN 34.60 Ω 0.016 λ TL218 MLIN 50.98 Ω 0.310 λ TL219 MCROSS 1 mils L 0.025 mm 1 mils 80 mils L 0.025 mm 1 mils L 5.334 mm 210 mils L 1.270 mm 50 mils ue tin 3.683 mm145 mils L 1.270 mm 50 mils 1.270 mm50 mils L 1.270 mm 50 mils 1.270 mm50 mils 55 mils W 2.540 mm 100 mils L 1.270 mm 50 mils W 1.397 mm 55 mils L 25.400 mm 1000 mils W2 0.025 mm 1 mils W1 9.144 mm 360 mils W4 0.025 mm 1 mils W1 1.270 mm 50 mils W2 3.048 mm 120 mils W1 1.270 mm 50 mils W2 3.048 mm 120 mils W1 3.048 mm 120 mils W2 9.144 mm 360 mils W1 3.048 mm 120 mils W2 9.144 mm 360 mils sc on 1010 mils 100 mils pr od TL206 9.144 mm360 mils s TL201 Electrical uc t Schematic ID W3 9.144 mm 360 mils MSTEP$ TL221 MSTEP$ TL222 MSTEP$ TL223 MSTEP$ TL224 MTEE 30.35 Ω 0.059 λ W1 9.144 mm 360 mils W2 9.144 mm 360 mils W3 3.048 mm 120 mils TL225 MTEE 53.88 Ω 0.057 λ W1 9.144 mm 360 mils W2 9.144 mm 360 mils W3 5.080 mm 200 mils TL226 MLIN 40.30 Ω 0.000 λ W 9.144 mm 360 mils L 0.127 mm 5 mils TL227 MTEE 40.30 Ω 0.000 λ W1 9.144 mm 360 mils W2 9.144 mm 360 mils W3 2.540 mm 100 mils TL228 MTEE 30.35 Ω 0.059 λ W1 9.144 mm 360 mils W2 9.144 mm 360 mils W3 3.048 mm 120 mils TL229 MTEE 12.48 Ω 0.002 λ W1 9.144 mm 360 mils W2 9.144 mm 360 mils W3 5.080 mm 200 mils TL230 MLIN 12.48 Ω 0.002 λ W 9.144 mm 360 mils L 0.127 mm 5 mils TL231 MLIN 12.48 Ω 0.002 λ W 9.144 mm 360 mils L 0.127 mm 5 mils TL232 MTEE 12.48 Ω 0.002 λ W1 9.144 mm 360 mils W2 9.144 mm 360 mils W3 2.540 mm 100 mils TL233 MLIN 53.88 Ω 0.037 λ W 9.144 mm 360 mils L 0.127 mm 5 mils Data Sheet di TL220 11 of 15 Rev. 03, 2015-01-14 PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 1990 MHz Schematic ID Electrical 1st/4th Dimension 2nd Dimension 3rd Dimension MBENDA$ W 1.270 mm 50 mils TL235 MBENDA$ W 1.270 mm 50 mils TL236 MLIN 53.88 Ω 0.015 λ W 1.270 mm 50 mils L 15.748 mm 620 mils TL237 MLIN 53.88 Ω 0.015 λ W 1.270 mm 50 mils L 15.748 mm 620 mils TL238 MLIN 12.48 Ω 0.121 λ W 1.270 mm 50 mils L 4.699 mm 185 mils TL239 MLIN 12.48 Ω 0.121 λ W 3.048 mm 120 mils L 4.699 mm 185 mils TL240 MLIN 12.48 Ω 0.121 λ W 1.270 mm 50 mils L 4.699 mm TL241 MLIN 12.48 Ω 0.121 λ W 2.032 mm 80 mils L 0.025 mm 1 mils TL242 MTEE$ 12.48 Ω 0.121 λ W1 1.270 mm 50 mils W2 1.270 mm 50 mils TL243 MLIN 12.48 Ω 0.121 λ W 2.032 mm 80 mils L 0.025 mm 1 mils TL244 MTEE$ 30.35 Ω 0.115 λ W1 1.270 mm 50 mils W2 1.270 mm 50 mils TL245 MLIN 40.30 Ω 0.000 λ W 3.048 mm 120 mils L 4.699 mm 185 mils TL246 MTEE 50.98 Ω 0.017 λ W1 1.397 mm 55 mils W2 1.397 mm 55 mils TL247 MLIN 50.98 Ω 0.028 λ W 2.032 mm 80 mils L 0.025 mm 1 mils TL248 MLIN 50.98 Ω 0.028 λ W 1.397 mm 55 mils L 2.261 mm 89 mils uc t s TL234 W3 2.032 mm 80 mils W3 2.032 mm 80 mils W3 2.032 mm 80 mils d pr od 185 mils di sc on tin ue See next page for Package Outline Specifications Data Sheet 12 of 15 Rev. 03, 2015-01-14 PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36248-2 (45° X 2.72 [.107]) CL 4.83±0.51 [.190±.020] uc t S CL pr od FLANGE 9.78 [.385] LID 9.40+0.10 –0.15 19.43 ±0.51 [.370+.004 –.006 ] [.765±.020] s D G 4X R1.52 [R.060] tin ue d 2X 12.70 [.500] 2X R1.63 [R.064] sc on 1.02 [.040] 19.81±0.20 [.780±.008] CL SPH 1.57 [.062] 3.61±0.38 [.142±.015] -A- 34.04 [1.340] 2 4 8 c-a se sh: -3 0 2 4 8 -2 _ p o _ 9 -F -0 8 di 0.0381 [.0015] 27.94 [1.100] Diagram Notes—unless otherwise specified: Data Sheet 1. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] 13 of 15 Rev. 03, 2015-01-14 PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37248-2 ( 45° X 2.72 [.107]) 2X 4.83±0.51 [.190±.020] uc t D +0.10 19.81±0.20 [.780±.008] C L tin ue 2X 12.70 [.500] SPH 1.57 [.062] sc on 19.43±0.51 [.765±.020] G d 4X R0.508 +0.381 –0.127 [R.020+.015 – .005] CL pr od LID 9.40 –0.15 [.370+.004 – .006 ] FLANGE 9.78 [.385] s C L 1.02 [.040] 0.0381 [.0015] -A- S 3.61±0.38 [.142±.015] 20.57 [.810] di 248-cases:h-31248-2_po Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6 Gold plating thickness: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 14 of 15 Rev. 03, 2015-01-14 PTFB191501EF V1 Confidential, Limited Internal Distribution Revision History: 2015-01-14 2009-09-09, Data Sheet Previous Version: Data Sheet Subjects (major changes since last revision) All Products discontinued. Please see PD Notes : PD_215_14. Add performance curves and reference circuit information. s Page uc t We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: pr od highpowerRF@infineon.com Edition 2015-01-14 sc on Published by Infineon Technologies AG 81726 Munich, Germany tin ue d To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer di The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 15 of 15 Rev. 03, 2015-01-14