PTFB211501FV1R0XTMA1

PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description -30 50 tin 40 30 20 ACP Low -50 10 ACP Up -55 33 35 37 39 41 sc 31 43 45 t uc pr Drain Efficiency (%) Efficiency -45 Broadband internal matching • Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% CCDF - Average output power = 40 W - Linear Gain = 18 dB - Efficiency = 32% - Adjacent channel power = –34 dBc d 60 • ue -25 on ACP (dBc) VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz -40 PTFB211501F Package H-37248-2 Features Single-carrier WCDMA Drive Up -35 PTFB211501E Package H-36248-2 od The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. 0 47 • Typical CW performance, 2170 MHz, 30 V - Output power at P–1dB = 150 W - Efficiency = 55% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power • Pb-Free and RoHS compliant 49 di Output Power (dBm) RF Characteristics Single-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 40 W AVG, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.5 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency ηD 27 32 — % IMD — –34 –32 dBc Intermodulation Distortion All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 13 Rev. 04, 2017-07-19 PTFB211501E PTFB211501F RF Characteristics (cont.) Two-tone Measurement (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 140 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz Min Typ Max Unit Gain Gps — 18 — dB Drain Efficiency ηD — 40 — % IMD — –30 — dBc Intermodulation Distortion DC Characteristics Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — 1.0 µA IDSS — — 10.0 µA pr — On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.08 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 1.2 A VGS 1.6 2.1 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA tin od Characteristic t Symbol uc Characteristic Symbol Value Unit VDSS 65 V VGS –6 to +10 V TJ 200 °C TSTG –40 to +150 °C RθJC 0.29 °C/W ue d VDS = 63 V, V GS = 0 V Maximum Ratings on Parameter Drain-Source Voltage sc Gate-Source Voltage Junction Temperature di Storage Temperature Range Thermal Resistance (TCASE = 70°C, 150 W CW) Ordering Information Type and Version Package Description Shipping H-36248-2, bolt-down Tape & Reel, 50 pcs PTFB211501E V1 R250 PTFB211501EV1R250XTMA1 H-36248-2, bolt-down Tape & Reel, 250 pcs PTFB211501F V1 R0 PTFB211501FV1R0XTMA1 Tape & Reel, 50pcs PTFB211501F V1 R250 PTFB211501FV1R250XTMA1 H-37248-2, earless flange PTFB211501E V1 R0 Ordering Code PTFB211501EV1R0XTMA1 H-37248-2, earless flange Tape & Reel, 250 pcs *See Infineon distributor for future availability. Data Sheet 2 of 13 Rev. 04, 2017-07-19 PTFB211501E PTFB211501F Typical Performance (data taken in production test fixture) Single-carrier WCDMA, 3GPP Broadband Two-tone Broadband VDD = 30 V, IDQ = 1.20 A, POUT = 40 W VDD = 30 V, IDQ = 1.20 A, POUT = 63 W 35 -25 Efficiency 30 -30 -35 25 ACP 20 15 2080 2100 Gain 2120 2140 2160 -40 2180 45 uc -20 40 35 30 25 20 -15 -20 Efficiency -25 -30 IMD3 od 40 IRL -35 -40 Gain -45 2200 -45 Return Loss (dB), IMD (dBc) 50 t -15 -10 pr IRL 55 Gain / Efficiency (dB / %) 45 -10 IRL (dB) / ACP Up (dBc) Gain / Efficiency (dB / %) 50 -50 15 2070 2090 2110 2130 2150 2170 2190 2210 Frequency (MHz) tin ue d Frequency (MHz) Two-tone Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ 1 = 2170 MHz, ƒ2 = 2169 MHz ƒ 1 = 2170 MHz, ƒ2 = 2169 MHz 15 44 46 -20 20 Efficiency 42 40 30 16 40 -10 48 50 52 Data Sheet 35 IMD3 -40 -50 0 -60 25 15 5 40 Output Power, PEP (dBm) 45 Efficiency -30 10 54 55 Efficiency (%) 17 50 IMD (dBc) Gain di Gain (dB) 18 sc 19 Efficiency (%) on Two-tone Drive-up VDD = 30 V, IDQ = 1.20 A, 42 44 46 48 50 52 54 Output Power, PEP (dBm) 3 of 13 Rev. 04, 2017-07-19 PTFB211501E PTFB211501F Typical Performance (cont.) Two-tone Drive-up at Selected Frequencies Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.20 A, tone spacing = 1 MHz VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz -20 20 65 19 55 -40 -50 18 17 35 Efficiency pr 16 45 Gain od Gain (dB) IMD (dBc) 2110 MHz 25 15 15 -60 41 43 45 47 49 51 41 53 45 47 49 51 53 51 53 Output Power (dBm) tin ue d Output Power, PEP (dBm) 43 Drain Efficiency (%) uc 2140 MHz -30 t 2170 MHz CW Performance Gain vs. Output Power VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz VDD = 30 V, ƒ = 2170 MHz on CW Performance Gain & Efficiency vs. Output Power Gain 16 30 +25°C +85°C –10°C 15 Efficiency 20 14 Power Gain (dB) 40 IDQ = 1.40 A Drain Efficiency (%) 17 50 di Gain (dB) 18 19 60 sc 19 10 42 43 44 45 46 47 48 49 50 51 IDQ = 1.20 A 17 IDQ = 0.80 A 16 52 41 Output Power (dBm) Data Sheet 18 43 45 47 49 Output Power (dBm) 4 of 13 Rev. 04, 2017-07-19 PTFB211501E PTFB211501F Typical Performance (cont.) Bias Voltage vs. Temperature Intermodulation Distortion vs. Output Power Voltage normalized to typical gate voltage, series show current VDD = 30 V, IDQ = 1.20 A, ƒ 1 = 2170 MHz, ƒ2 = 2169 MHz 1.03 7th 50 55 t 20 14 A 16 A 40 60 80 100 G 0.2 2080 MHz 2200 MHz Z Load Ω MHz R jX R jX 2200 4.29 –8.14 1.49 –4.39 2170 4.36 –8.34 1.52 –4.50 2140 4.45 –8.53 1.55 –4.61 2110 4.55 –8.74 1.58 –4.72 2080 4.67 –8.95 1.62 –4.84 5 of 13 0.1 V Z Source Ω Z Load GT H ELEN S Z0 = 50 Ω 0.1 sc Z Load di 10 A 12 A 0.0 on D Data Sheet 8A Case Temperature (°C) - W AV E LE NGT H ST tin Broadband Circuit Impedance Frequency 4A ue Output Power, PEP (dBm) Z Source 0 d 45 0.98 0.97 -20 -60 40 1 WA