PTFB211803ELV1R0XTMA1

PTFB211803EL PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description 40 -25 35 -35 25 -40 tin IMD Up ACPR -45 -50 IMD Low -55 -60 31 33 35 37 39 41 43 45 47 20 15 Efficiency (%) ue 30 d s uc t • Broadband internal matching -20 sc on IMD (dBc) / ACPR (dBc) VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz Efficiency PTFB211803FL H-34288-4/2 Features Two-carrier WCDMA 3GPP Drive-up -30 PTFB211803EL H-33288-6 pr od The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. • Typical two-carrier WCDMA performance at 2170 MHz, 30 V - Average output power = 40 W - Linear Gain = 17.5 dB - Efficiency = 29.7% - Intermodulation distortion = –34 dBc - Adjacent channel power = –37 dBc • Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 180 W - Efficiency = 55% 10 • Increased negative gate-source voltage range for improved performance in Doherty amplifiers 5 • Integrated ESD protection. 0 • Capable of handling 10:1 VSWR @ 30 V, 180 W (CW) output power 49 • Pb-free and RoHS compliant di Output Power (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test–verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.3 A, POUT = 40 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 17.5 — dB Drain Efficiency hD — 29.5 — % Adjacent Channel Power Ratio ACPR — –38 — dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 14 Rev. 0   PTFB211803EL PTFB211803FL RF Characteristics (cont.) Two-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.3 A, POUT = 38 W average, ƒ1 = 2165 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF Min Typ Max Unit Gain Gps 16 17 — dB Drain Efficiency hD 28 29.5 — % Intermodulation Distortion IMD — –32.5 dBc s Symbol –31.5 Min Typ Max Unit V(BR)DSS 65 — — V IDSS — — 1.0 µA IDSS — — 10.0 µA RDS(on) — 0.05 — W VGS 2.3 3.0 3.3 V IGSS — — 1.0 µA DC Characteristics Symbol Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA Drain Leakage Current VDS = 28 V, VGS = 0 V Drain Leakage Current VDS = 63 V, VGS = 0 V On-State Resistance VGS = 10 V, VDS = 0.1 V Operating Gate Voltage VDS = 30 V, IDQ = 1.3 A Gate Leakage Current VGS = 10 V, VDS = 0 V pr od Conditions ue d Characteristic tin Maximum Ratings uc t Characteristic Symbol Value Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C RqJC 0.3 di sc on Parameter Thermal Resistance (TCASE = 70°C, 180 W CW) Unit °C/W Ordering Information Type and Version Order Code Package Description Shipping PTFB211803EL V1 R0 PTFB211803ELV1R0XTMA1 H-33288-6, bolt-down Tape & Reel, 50pcs PTFB211803EL V1 R250 PTFB211803ELV1R250XTMA1 H-33288-6, bolt-down Tape & Reel, 250 pcs PTFB211803FL V2 R0 PTFB211803FLV2R0XTMA1 H-34288-4/2, earless flange Tape & Reel, 50pcs PTFB211803FL V2 R250 PTFB211803FLV2R250XTMA1 H-34288-4/2, earless flange Tape & Reel, 250 pcs Data Sheet 2 of 14 2EV   PTFB211803EL PTFB211803FL Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP Single-carrier WCDMA Drive-Up VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 40 40 -20 16 10 Efficiency 15 35 37 39 41 43 45 47 -40 25 20 ACP Low -45 -50 15 10 ACP Up -55 0 33 30 uc t 20 -35 pr od 17 Efficiency -30 ACP (dBc) 30 Gain Drain Efficiency (%) Gain (dB) 18 35 s -25 5 0 -60 49 33 37 39 41 43 45 47 49 Output Power (dBm) tin ue d Output Power (dBm) 35 Drain Efficiency (%) 19 VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz Single-carrier WCDMA, 3GPP Broadband CW Performance Gain vs. Output Power sc on VDD = 30 V, IDQ = 1.30 A, PO UT = 47 dBm -10 30 -30 Efficiency ACP 20 -40 Gain 10 Power Gain (dB) -20 2100 2120 2140 2160 2180 IDQ = 1.30 A 16 41 2200 Frequency (MHz) Data Sheet 17 IDQ = 0.90 A 15 -50 2080 IDQ = 1.80 A 18 IRL (dB) / ACP Up (dBc) IRL 40 di Gain (dB) / Efficiency (%) 50 VDD = 30 V, ƒ = 2170 MHz 43 45 47 49 51 53 Output Power (dBm) 3 of 14 Rev. 0   PTFB211803EL PTFB211803FL Typical Performance (cont.) Two-tone Drive-up Two-tone Drive-up VDD = 30 V, IDQ = 1.30 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz VDD = 30 V, IDQ = 1.30 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz 40 -25 30 -35 20 17 16 10 Efficiency 15 42 44 46 48 50 52 40 30 IMD3 20 -55 10 0 -65 0 40 -45 pr od Gain (dB) Gain Efficiency (%) 18 Efficiency 40 54 44 46 48 50 52 54 Output Power, PEP (dBm) tin ue d Output Power, PEP (dBm) 42 Efficiency (%) 19 50 s -15 uc t 50 IMD (dBc) 20 Two-tone Broadband Performance Two-tone Drive-up at Selected Frequencies sc on VDD = 30 V, IDQ = 1.30 A, PO UT = 63 W 35 -20 Efficiency -30 IMD3 25 -40 Gain 15 2170MHz 2140MHz -30 IMD (dBc) IRL -20 -10 Return Loss (dB) / IMD (dBc) 45 di Gain (dB) / Efficiency (%) 55 VDD = 30 V, IDQ = 1.30 A, tone spacing = 1 MHz -50 2080 2100 2120 2140 2160 2180 -40 -50 2200 41 Frequency (MHz) Data Sheet 2110MHz 43 45 47 49 51 53 Output Power, PEP (dBm) 4 of 14 2EV   PTFB211803EL PTFB211803FL Typical Performance (cont.) Power Sweep, CW Gain & Efficiency vs. Output Power Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz 40 Gain 16 15 30 +25°C +85°C –10° C Efficiency 20 14 44 46 48 50 45 35 Efficiency 25 15 52 41 43 45 15 47 49 51 53 Output Power (dBm) tin ue d Output Power (dBm) 17 16 10 42 Gain Drain Efficiency (%) 17 18 s 50 55 uc t 18 19 pr od 60 Gain (dB) 19 Drain Efficiency (%) Gain (dB) VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz Intermodulation Distortion vs. Output Power sc on VDD = 30 V, IDQ = 1.30 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz -20 3rd Order -40 di IMD (dBc) -30 -50 5th 7th -60 -70 40 45 50 55 Output Power, PEP (dBm) Data Sheet 5 of 14 Rev. 0   5 4 0. 0 0. 45 0. nalized to 50 Ohms 2080 MHz 0. MHz 3 R --> PTFB211803EL PTFB211803FL RD G E NE RA T O Z Load W 2080 MHz MHz R jX R jX 2200 2.02 –6.03 1.70 –4.67 2170 2.12 –6.26 1.72 –4.76 2140 2.23 –6.50 1.73 –4.85 2110 2.34 –6.75 1.75 2080 2.47 –7.01 1.77 Z Source 0. 2 d ue –4.95 tin –5.05 0. 3 0. 4 di 0. 6 0. 5 sc on 0. 45 0 0. 5 See next page for reference circuit information Data Sheet 0.4 0.3 0.2 0.1 s 0.1 2200 MHz E W AV