PTMA080302M
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
30 W, 28 V, 700 – 1000 MHz
Description
The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS
integrated amplifier intended for use in all typical modulation formats
from 700 to 1000 MHz. This device is offered in a 20-lead, thermallyenhanced, overmolded package for cool and reliable operation.
Features
Broadband Performance
35
10
30
5
Gain (dB)
Gain
0
20
-5
15
-10
10
-15
Return Loss
5
Retu
urn Loss (dB)
VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA,
fixture tuned for 920 - 960 MHz
25
-20
-25
0
700
800
900
1000
PTMA080302M
Package PG-DSO-20-63
1100
Frequency (MHz)
•
Designed for wide RF modulation bandwidths, and
low memory effects
•
On-chip matching, integrated input DC block,
50-ohm input and ~ 8-ohm output
•
Typical GSM/EDGE performance, 940 MHz, 28 V
- Output power = 15 W Avg.
- Linear gain = 31 dB
- Power added efficiency = 36%
- EVM at 15 W = 1.7 %
- ACPR at 400 kHz = –61 dBc
- ACPR at 600 kHz = –73 dBc
•
Typical CW performance at 940 MHz, 28 V
- Output power at P1dB = 32 W
- Linear gain (1 W) = 31 dB
- Power added efficiency = 46%
•
Capable of handling 10:1 VSWR @ 28 V, 30 W
(CW) output power
•
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
•
RoHS-compliant package
RF Characteristics
GSM/EDGE Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, ƒ = 920 to 960 MHz, POUT = 15 W Avg.
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
31
—
dB
Power-added Efficiency
PAE
—
36
—
%
Error Vector Magnitude
EVM (RMS)
—
1.7
—
%
table continued next page
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet – DRAFT ONLY
1 of 11
Rev. 07, 2012-10-24
PTMA080302M
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
GSM/EDGE Specifications (cont.)
VDD = 28 V, IDQ1 = 150 mA, IDQ2 = 280 mA, ƒ = 920 to 960 MHz, POUT = 15 W Avg.
Characteristic
Modulation Spectrum
Symbol
Min
Typ
Max
Unit
400 kHz offset
ACPR1
—
–61
—
dBc
600 kHz offset
ACPR2
—
–73
—
dBc
ΔG
—
0.2
—
dB
Gain Flatness
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ1 = 150 mA, IDQ2 = 280 mA, POUT = 15 W Avg, ƒ = 940 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
31
32
—
dB
Drain Efficiency
ηD
32.5
35
—
%
Third Order Intermodulation Distortion
IMD3
—
–33
–29
dBc
Single-tone Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ1 = 150 mA, IDQ2 = 280 mA, ƒ = 940 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
32
—
dB
Power-added Efficiency
PAE
—
46
—
%
Output Power
P1dB
—
31
—
W
Symbol
Min
Typ
Max
Unit
DC Characteristics
Stage 1 Characteristics
Conditions
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
VDS = 63 V, VGS = 0 V
IDSS
—
—
10.0
µA
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
On-state Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
1.85
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ1 = 120 mA,
VGS
2.0
2.5
3.0
V
Data Sheet – DRAFT ONLY
2 of 11
Rev. 07, 2012-10-24
PTMA080302M
Confidential, Limited Internal Distribution
DC Characteristics (cont.)
Stage 2 Characteristics
Conditions
Symbol
Min
Typ
Max
Unit
Drain-source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
VDS = 63 V, VGS = 0 V
IDSS
—
—
10.0
µA
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
On-state Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.25
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ2 = 280 mA
VGS
2.0
2.5
3.0
V
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Input Power
PIN
16
dBm
Total Device Dissipation
PD
129.5
W
0.74
W/°C
TSTG
–40 to +150
°C
Stage 1
RθJC
6.7
°C/W
Stage 2
RθJC
1.7
°C/W
Above 25°C derate by
Storage Temperature Range
Thermal Resistance
(TCASE = 70°C, 30 W CW)
Moisture Sensitivity Level
Level
Test Standard
Package Temperature
Unit
3
IPC/JEDEC J-STD-020
260
°C
Ordering Information
Type and Version
Order Code
Package and Description
Shipping
PTMA080302M V1 R250
PTMA080302MV1R250AUMA1
PG-DSO-20-63, Copper heat slug, plastic EMC body
Tape & Reel, 250 pcs.
Data Sheet – DRAFT ONLY
3 of 11
Rev. 07, 2012-10-24
PTMA080302M
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
CW Power Performance
Two-tone Drive-up
VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA,
ƒ = 920, 940, 960 MHz
at selected frequencies
VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA
28
50
Efficiency
24
40
20
30
920 MHz
940 MHz
960 MHz
16
12
20
10
8
32
36
40
44
40
IMD3
-40
30
50
-50
20
Efficiency
-60
0
28
50
920 MHz
940 MHz
960 MHz
-30
IM
MD3 (dBc)
60
Gain
Power Ad
dded Efficiency (%)
32
Gain (dB)
-20
70
10
-70
48
Power Add
ded Efficiency (%)
36
0
27
29
31
33
35
37
39
41
43
Output Power (dBm)
Output Power (dBm)
Power Sweep
EDGE Modulation Spectrum Performance
at selected drain voltages
VDD1=28 V, VDD2 = 24 V, 28 V and 32 V,
IDQ1 = 120 mA, ƒ = 940 MHz
VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA,
ƒ = 942 MHz
34
42
–25 °C
25 °C
90 °C
38
32
Gain
36
30
Ga
ain (dB)
Powe
er Gain (dB)
40
32 V
28 V
34
32
30
28
28
26
24 V
24
26
29
31
33
35
37
39
41
43
45
30
47
34
36
38
40
42
44
46
Output Power (dBm)
Output Power (dBm)
Data Sheet – DRAFT ONLY
32
4 of 11
Rev. 07, 2012-10-24
PTMA080302M
Confidential, Limited Internal Distribution
at selected frequencies
VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA
-40
–25 °C
25 °C
90 °C
40
35
-45
Efficiency
-50
-55
30
400 kHz
25
-60
-65
20
15
-70
600 kHz
-75
10
-80
5
-85
0
30
32
34
36
38
40
42
-40
45
925.2 MHz
942.6 MHz
959.8 MHz
40
35
30
-50
-55
400 kHz
25
-60
-65
20
15
-70
70
600 kHz
10
-75
5
-80
0
-85
30
44
32
34
36
38
40
42
44
Output Power (dBm)
Output Power (dBm)
EDGE EVM
EDGE EVM
at selected temperatures
VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA,
series show ƒ = 942 MHz
VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA,
series are at selected frequencies
70
50
12
10
8
40
30
6
Efficiency
4
20
EVM
10
2
0
0
30
32
34
36
38
40
42
14
925.2 MHz
942.6 MHz
959.8 MHz
60
50
12
10
Efficiency
40
8
30
6
20
4
EVM
10
2
0
0
30
44
32
34
36
38
40
42
44
Output Power (dBm)
Output Power (dBm)
Data Sheet – DRAFT ONLY
Power Adde
ed Efficiency (%)
–25 °C
25 °C
90 °C
60
Error Vecto
or Magnitude(%)
14
70
Power Add
ded Efficiency (%)
-45
Efficiency
Error Vecttor Magnitude(%)
Power Add
ded Efficiency (%)
45
Power Ad
dded Efficiency (%)
EDGE Modulation Spectrum Performance
at selected temperatures
VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA,
ƒ = 942 MHz
Edge Modula
ation Spectrum (dBc)
EDGE Modulation Spectrum Performance
Edge Modullation Spectrum (dBc)
Typical Performance (cont.)
5 of 11
Rev. 07, 2012-10-24
PTMA080302M
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Gate – Source Voltage vs. Temperature
Normalized Gate – S
Source Voltage (threshold),
V
VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA
1.15
1.10
VGS1
VGS2
1.05
1.00
0.95
0.90
Slope = –1.3 mV/°C
0.85
-30
-10
10
30
50
70
90
Temperature (°C)
Broadband Circuit Impedance
Z Load Ω
–3.1
780
9.3
–2.6
800
8.9
–2.1
820
8.6
–1.6
840
8.3
–1.0
860
8.0
–0.5
880
7.8
0.0
900
7.7
0.6
920
7.6
1.1
940
7.5
1.7
960
7.4
2.3
980
7.4
2.9
1000
7.5
3.5
Z0 = 50 Ω
1. 0
1000 MHz
0.4
9.8
0.3
760
0.2
–3.6
0.1
10.3
0.0
740
Z Load
700 MHz
THS
–4.0
L E NG
11.0
0. 1
A VE
720
W
