PTVA035002EVV1XWSA1

PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Pulsed CW Performance • Unmatched input and output • High gain and efficiency • Integrated ESD protection 22 85 20 75 Gain 65 16 55 14 12 10 45 Efficiency 35 a035002 gr 1 48 50 52 54 56 58 60 • Low thermal resistance • Pb-free and RoHS-compliant Drain Efficiency (%) Gain (dB) 450 MHz, VD = 50 V, IDQ = 0.5 A, 12 µsec pulse width, 10% duty cycle 18 PTVA035002EV Package H-36275-4 • Capable of withstanding a 13:1 load mismatch at 57 dBm under pulsed conditions: 12 µsec pulse width, 10% duty cycle 25 Output Power (dBm) RF Characteristics Pulsed CW Class AB Characteristics (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 0.5 A, POUT = 500 W, ƒ = 450 MHz, 12 µsec pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps — 18 — dB Drain Efficiency hD — 64 — % All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 05, 2013-07-10 PTVA035002EV RF Characteristics Pulsed CW Characteristics (tested in Infineon test fixture) VDD = 50 V, VGS = 2.9 V, IDQ = 0.0 A, POUT = 500 W, ƒ = 450 MHz, 12 µsec pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 14.75 15.5 — dB Drain Efficiency hD 63 66 — % DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1.0 µA VDS = 105 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — W Operating Gate Voltage VDS = 50 V, IDQ = 600 mA VGS — 3.70 — V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 300 W CW) RqJC 0.20 °C/W Ordering Information Type and Version Order Code Package Description Shipping PTVA035002EV V1 PTVA035002EVV1XWSA1 H-36275-4, bolt-down Tray Data Sheet 2 of 8 Rev. 05, 2013-07-10 PTVA035002EV Typical Performance (data taken in production test fixture) Power Sweep, Pulsed CW Power Sweep, Pulsed CW 12 µsec pulse width, 10% duty cycle VDD = 50 V, VG = 2.9 V, 12 µsec pulse width, 10% duty cycle, power optimized 16 60 14 50 12 10 40 450 MHz 420 MHz 390 MHz Efficiency 30 a035002 gr 3-1 48 50 52 54 56 58 60 Gain 18 Gain (dB) 70 Gain Drain Effficiency (%) Gain (dB) 18 80 20 60 16 Efficiency 14 40 450 MHz 420 MHz 390 MHz 10 20 8 50 14 50 12 40 30 Efficiency a035002 gr 3 51 53 55 57 59 16 20 IDQ = 0.02 A 12 8 20 Output Power (dBm) Gain (dB) 60 Data Sheet 60 1.5 A 0.5 A 20 Drain Efficiency (%) Gain (dB) 70 49 58 80 Gain 47 56 Pulsed CW Gain VDD = 50 V VDD = 40 V VDD = 30 V 45 54 VDD = 50 V, 450 MHz, 12 µsec pulse width, 10% duty cycle, series show IDQ 16 8 52 Output Power (dBm) Pulsed CW Performance 10 30 a035002ev_gr3-2 48 VGG = 2.9 V, 450 MHz, 2 µsec pulse width, 10% duty cycle, for selected VDD 18 50 12 Output Power (dBm) 20 70 Drain Effficiency (%) 80 20 8 VDD = 50 V, VG = 2.9 V, efficiency optimized a03500 gr 3-4 48 50 52 54 56 58 60 Output Power (dBm) 3 of 8 Rev. 05, 2013-07-10 PTVA035002EV Typical Performance (cont.) Pulsed CW Efficiency VD = 50 V, 450 MHz, 12 µsec pulse width, 10% duty cycle, series show IDQ 80 IDQ = 0.02 A Efficie ency (%) 70 0.5 A 60 50 40 1.5 A 30 20 48 50 52 54 56 58 a035002 gr 6 60 Output Power (dBm) Broadband Circuit Impedance Z Source Ω Frequency MHz R 390 Z Load Ω jX R jX 1.28 –0.12 1.80 –2.22 405 1.35 0.18 1.86 –1.91 420 1.43 0.48 1.92 –1.62 435 1.54 0.76 1.98 –1.35 450 1.67 1.04 2.02 –1.11 Data Sheet 4 of 8 Rev. 05, 2013-07-10 PTVA035002EV Reference Circuit, 390 – 450 MHz TMM10, .050 (63) C105 R803 S3 C803 TMM10, .050 (63) VDD C801 C205 R804 VDD R805 S2 C108 3 C208 C207 C204 1 R109 R110 R112 R114 R113 R111 C109 C206 R107 4 PTVA035002EV C104 S2 S1 S1 R101 R102 R104 R106 R105 R103 C107 RF_IN C102 C802 + R802 R801 R807 R806 2 C201 RF_OUT C202 5 C203 C210 C212 6 VDD C103 R108 S1 C209 C211 C106 PTVA035002_IN_03 C101 PTVA035002_OUT_03 p t v a 0 3 5 0 0 2 e v _ C D _ 0 7 - 0 8 - 2 0 1 3 Reference circuit assembly diagram (not to scale)* Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower Data Sheet 5 of 8 Rev. 05, 2013-07-10 PTVA035002EV Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA035002EV Test Fixture Part No. LTN/PTVA035002EV PCB Rogers TMM10, 1.27 mm [0.050"] thick, 2 oz. copper, εr = 9.2 Components Information Component Description Suggested Manufacturer P/N C101, C102, C104 Capacitor, 300 pF ATC ATC100B301KW200X C103, C108 Capacitor, 20 pF ATC ATC100B200KW500X C105, C106, C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K C107, C109 Capacitor, 6.2 pF ATC ATC100B6R2CT500X R101, R102, R103, R104, R105, R106, R109, R110, R111, R112, R113, R114 Resistor, 5.6 W Panasonic Electronic Components ERJ-8GEYJ5R6V R107, R108 Resistor, 1000 W Panasonic Electronic Components ERJ-8GEYJ102V R801 Resistor, 100 W Panasonic Electronic Components ERJ-8GEYJ101V R802 Resistor, 2000 W Panasonic Electronic Components ERJ-8GEYJ202V R803 Resistor, 3600 W Panasonic Electronic Components ERJ-8GEYJ362V R804 Resistor, 1300 W Panasonic Electronic Components ERJ-3GEYJ132V R805 Resistor, 1200 W Panasonic Electronic Components ERJ-3GEYJ122V R806 Resistor, 2400 W Panasonic Electronic Components ERJ-8GEYJ242V R807 Resistor, 6200 W Panasonic Electronic Components ERJ-8GEYJ622V S1 Transistor Infineon Technologies BCP56 S2 Voltage regulator Texas Instruments LM7805 S3 Potentiometer Bourns Inc. 3224W-1-202E C201, C206, C209 Capacitor, 300 pF ATC ATC100B301KW200X C202 Capacitor, 3 pF ATC ATC100B3R0CW500X C203, C204 Capacitor, 4.3 pF ATC ATC100B4R3CW500X C205, C211 Capacitor, 100 µF United Chemi-Con EMVE101ARA101MKE0S C207, C212 Capacitor, 10 µF TDK Corporation C5750X7S2A106M230KB C208, C210 Capacitor, 2.2 µF TDK Corporation C4532X7R2A225K230KA S1, S2 Inductor, 17.5 nH Coilcraft B06TGLB Input Output Data Sheet 6 of 8 Rev. 05, 2013-07-10 Package Outline Specifications Package H-36275-4 13.72 [.540] 2X 45° X 1.19 [45° X .047] 2x 2.03 [.080] REF CL 2X R1.59 [R.062] D1 3.23±0.51 [.127±.020] D2 S 16.612±0.500 [.654±.020] 9.144 [.360] CL 10.16 [.400] G2 G1 8X R0.51+0.13 -0.51 [ R.020+.005 -.020 ] CL CL 4X 11.68 [.460] 35.56 [1.400] 2.13 [.084] SPH 4.58+0.25 -0.13 31.242±0.280 [1.230±.011] 1.63 [.064] [.180 +.010 -.005 ] H-36275-4_po_01_10-22-2012 CL CL CL 41.15 [1.620] Diagram Notes—unless otherwise specified: Diagram Notes—unless otherwise specified: 1.1. Interpret Interpretdimensions dimensionsand andtolerances tolerancesper perASME ASMEY14.5M-1994. Y14.5M-1994. 2.2. Primary Primarydimensions dimensionsare aremm. mm.Alternate Alternatedimensions dimensionsare areinches. inches. 3.3. AllAlltolerances tolerances± ±0.127 0.127[.005] [.005]unless unlessspecified specifiedotherwise. otherwise. 4.4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. Pins: D1, D2 - drain, - gate, S - source. 5.5. Lead mm [0.005 ±0.002 inch]. Leadthickness: thickness:0.127 0.127±0.051 +0.051/–0.025 [.005 +.002/–.001]. 6.6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15microinch]. microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 7 of 8 Rev. 05, 2013-07-10 PTVA035002EV V1 Revision History: 2013-07-10 Previous Version: 2012-02-24, Data Sheet Page Subjects (major changes since last revision) 2 Updated DC Characteristics and Maximum Ratings tables, Corrected order code 5, 6, 7, 8 Removed circuit schematics, corrected circuit diagram & component information Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2013-07-10 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 05, 2013-07-10