PTVA093002TCV1R250XTMA1

PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz Description The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design, input matching, and a thermally-enhanced surface-mount package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Single-carrier 3GPP WCDMA VDD = 50 V, IDQ = 400 mA, ƒ = 758 MHz 3.84 MHz bandwidth, 10 dB PAR 24 • Typical CW performance in a combined-lead 50-ohm single-ended fixture, 780 MHz, 50 V - Output power at P1dB = 158 W - Gain = 18.2 dB - Efficiency = 52% • Typical pulsed CW performance in a combined-lead 50-ohm single-ended fixture, 870 MHz, 50 V - Output power at P3dB = 280 W - Gain = 16.2 dB - Efficiency = 50% • Integrated ESD protection, Human Body Model class 2 (per JESD22-A114) • Capable of withstanding a 10:1 load mismatch at 50 V, 63 W (CW) output power • Low thermal resistance • Pb-free and RoHS compliant 60 Efficiency 20 40 Gain 16 20 12 0 8 -20 Efficiency (%) Peak/Average Ratio, Gain (dB) PTVA093002TC Package H-49248H-4, formed leads PAR @ 0.01% CCDF 4 -40 0 a093002tc-gr1a 25 30 35 40 45 50 -60 55 Average Output Power (dBm) RF Specifications Single-carrier WCDMA Characteristics (device with flat leads tested in an Infineon Doherty production test fixture) VDD = 50 V, IDQ = 400 mA, VGSpeak = 1.9 V, POUT = 63 W average, ƒ = 803 MHz. 3GPP WCDMA signal: 3.84 MHz bandwidth, 10 dB PAR @0.01% CCDF. Characteristic Symbol Min Typ Max Unit Gain Gps 17.5 18.5 — dB Drain Efficiency ηD 40 45 — % ACPR — –34 –32 dBc Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 04, 2014-06-16 PTVA093002TC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1.0 µA VDS = 105 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.265 — Ω Operating Gate Voltage (main) VDS = 50 V, IDQ = 400 mA VGS — 3.8 — V (peak) VDS = 50 V, IDQ = 0 A VGS — 1.9 — V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 105 V Gate-source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 200 W CW) RθJC 0.44 °C/W Ordering Information Type and Version Order Code Package and Description Shipping PTVA093002TC V1 R250 PTVA093002TCV1R250XTMA1 H-49248H-4, earless, ceramic open-cavity, formed leads, surface mount Tape & Reel, 250 pcs Data Sheet 2 of 10 Rev. 04, 2014-06-16 PTVA093002TC Typical Performance (data taken in a reference test fixture) Single-carrier 3GPP WCDMA Single-carrier WCDMA Drive-up VDD = 50 V, IDQ = 400 mA, ƒ = 780 MHz 3.84 MHz bandwidth, 10 dB PAR VDD = 50 V, IDQ = 400 mA, ƒ = 803 MHz 3.84 MHz bandwidth, 10 dB PAR 24 Peak/Average Ratio, Gain (dB) 40 Gain 16 20 12 0 -20 8 PAR @ 0.01% CCDF -40 4 0 a093002tc-gr1b 25 30 35 40 45 50 -60 20 16 20 12 0 8 -20 PAR @ 0.01% CCDF 4 -40 0 55 a093002tc-gr1c 25 30 Average Output Power (dBm) 50 Broadband Performance 3GPP WCDMA single-carrier VDD = 50 V, IDQ = 400 mA, POUT = 48 dBm, PAR = 10 dB 60 50 19 55 -40 30 -50 20 758 MHz 780 MHz 803 MHz -70 a093002tc-gr2d 30 35 40 45 50 Gain (dB) 20 40 -60 -60 55 60 Drain Efficiency(%) ACP Up & Low (dBc) 45 VDD = 50 V, IDQ = 400 mA, 3.84 MHz bandwidth, 10 dB PAR -30 50 18 Gain 17 45 16 40 10 15 0 14 Efficiency 35 a093002tc-gr3 700 55 Average Output Power (dBm) Data Sheet 40 Single-carrier 3GPP WCDMA ACP Up ACP Low 25 35 Average Output Power (dBm) -10 -20 40 Gain 750 800 Drain Efficiency (%) 20 60 Efficiency Efficiency (%) 60 Efficiency Efficiency (%) Peak/Average Ratio, Gain (dB) 24 30 850 Frequency (MHz) 3 of 10 Rev. 04, 2014-06-16 PTVA093002TC Typical Performance (cont.) Broadband Performance CW Performance 3GPP WCDMA single-carrier VDD = 50 V, IDQ = 400 mA, POUT = 48 dBm, PAR = 10 dB VDD = 50 V, IDQ = 400 mA (series show frequency) -10 -5 60 25 Return Loss -15 ACP Up -20 -25 -30 ACP Low 20 800 850 10 900 31 35 Frequency (MHz) 39 IDQ = 400 mA, ƒ = 758 MHz IDQ = 400 mA, ƒ = 780 MHz 60 Efficiency 40 Gain 20 15 Power Gain (dB) 20 VDD = 46 V VDD = 50 V VDD = 54 V 10 a093002tc-gr6a 35 39 43 47 55 25 Efficiency (%) Power Gain (dB) 51 CW Performance at selected VDD Efficiency 51 0 20 40 Gain 15 20 VDD = 46 V VDD = 50 V VDD = 54 V 10 55 a093002tc-gr6b 27 Output Power (dBm) Data Sheet 47 CW Performance at selected VDD 60 31 43 Output Power (dBm) 25 27 0 a093002tc-gr5 27 Efficiency (%) 750 Gain 15 758 MHz 780 MHz 803 MHz -35 a093002tc-gr4 700 40 -30 -40 650 20 Gain (dB) -20 Efficiency (%) -10 Return Loss (dB) ACP Low, ACP Up (dBc) Efficiency 31 35 39 43 47 51 0 55 Output Power (dBm) 4 of 10 Rev. 04, 2014-06-16 PTVA093002TC Typical Performance (cont.) CW Small Signal Performance CW Performance at selected VDD VDD = 50 V, IDQ = 400 mA IDQ = 400 mA, ƒ = 803 MHz 60 20 0 40 Gain 15 20 Power Gain (dB) 20 Efficiency (%) Power Gain (dB) Efficiency VDD = 46 V VDD = 50 V VDD = 54 V 10 a093002tc-gr6c 27 31 35 39 43 47 51 0 Gain 18 -5 16 -10 Return Loss 14 -15 12 55 a093002tc-gr7 700 Output Power (dBm) 750 800 850 Input Return Loss (dB) 25 -20 900 Frequency (MHz) See next page for Load Pull Data Sheet 5 of 10 Rev. 04, 2014-06-16 PTVA093002TC Load Pull Performance Z Source D1 Z Load S G1 G2 D2 Main side pulsed CW signal: 160 µsec, 10% duty cycle; 50 V, VGS = 3.8 V, IDQ = 350 mA P1dB Class AB Max Output Power Freq [MHz] Zs [Ω] 758 791 803 Zl Max PAE [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] 1.62 – j4.90 2.53 – j2.78 21.16 53.39 218 2.16 – j5.30 2.59 – j2.99 21.12 53.32 215 2.54 – j5.29 2.16 – j2.82 21.08 53.39 218 Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] 59.8 2.25 – j0.37 23.46 51.01 126 71.9 60.7 1.78 – j0.51 23.61 50.31 107 73.2 61.4 1.81 – j0.56 23.59 50.38 109 74.1 Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, IDQ = 75 mA P1dB Class C Max Output Power Freq [MHz] Zs [Ω] MHz Zl Max PAE [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] Ohm Ohm dB dBm W 758 1.62 – j4.90 2.47 – j2.74 20.43 53.46 791 2.16 – j5.30 2.15 – j2.66 20.46 803 2.54 – j5.29 2.14 – j2.82 20.30 Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] % Ohm dB dBm W % 222 63.9 2.14 – j0.55 22.20 51.32 135 75.0 53.38 218 66.1 1.92 – j0.99 22.02 51.41 138 76.3 53.49 224 65.7 1.91 – j0.89 22.08 51.19 131 77.4 Reference Circuit, tuned for 758 – 803 MHz DUT PTVA093002TC Test Fixture Part No. LTD/PTVA093002TC V1 PCB Rogers RO4360, 0.508 mm [.020"] thick, 2 oz. copper, εr = 6.4 Find Gerber files for this reference fixture on the Infineon Web site at (www.infineon.com/rfpower) Data Sheet 6 of 10 Rev. 04, 2014-06-16 PTVA093002TC Reference Circuit, tuned for 758 – 803 MHz (cont.) RO4360, .020 (62) VGG C104 VDD RO4360, .020(194) C205 C105 C201 C204 C209 C202 C203 C210 C106 C208 R101 C207 PTVA093002TC R103 C101 RF_IN U1 C103 C102 C206 RF_OUT R102 C109 C217 C108 C215 C213 VDD C218 C216 C214 C107 C211 C212 PTVA093002TC_OUT_03 PTVA093002TC_IN_03 c 09 3 0 02 t c_ c d_ 2 01 4 - 06 - 10 Reference circuit assembly diagram (not to scale) Component Information Component Description Manufacturer P/N C101 Chip capacitor, 3.6 pF ATC ATC100A3R6CW150XB C102 Chip capacitor, 3.9 pF ATC ATC800A3R9CW150XB C104, C107 Capacitor, 10 µF Murata Electronics North America LLL31BC70G106MA01L C105, C106, C108, C109 Chip capacitor, 6 pF ATC ATC100A6R0CW150XB R101, R102 Resistor, 10 Ohm Panasonic – ECG ERJ-3GEYJ100V R103 Resistor, 50 Ohm Anaren RFP-060120A15Z50 U1 Hybrid Coupler, 4 dB, 90° Anaren X3C07P-04S Input (table continued on page 8) Data Sheet 7 of 10 Rev. 04, 2014-06-16 PTVA093002TC Reference Circuit (cont.) Component Information (cont.) Component Description Manufacturer P/N C206 Chip capacitor, 3.3 pF ATC ATC100A3R3CW150XB C207 Chip capacitor, 5.6 pF ATC ATC800A5R6CW150XB C208, C210, C217, C218 Chip capacitor, 6 pF ATC ATC100A6R0CW150XB C207, C209 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C209, C211 Capacitor, 100 µF, 100 V United Chemi-Con EMVE101ARA101MKE0S Output Pinout Diagram (top view) S D2 Peak Main G1 G2 Pin D1, D2 G1, G2 S H-34284H-4_gw_pd_10-10-2012 D1 Description Drain Gate Source (flange) Lead connections for PTVA093002TC Data Sheet 8 of 10 Rev. 04, 2014-06-16 PTVA093002TC Package Outline Specifications Package H-49248H-4, formed leads (8.89 [.350]) 2X 45° x .64 [.025] [ D1 9.78 [.385] G1 4X R0.51+0.38 –0.13 R.020 +.015 –.005 ] ] D2 CL [ 4X 1.49±0.25 [.059±.010] 4X 1.00+0.25 –0.10 .039+.010 –.004 (5.08 [.200]) CL 14.75±0.50 [.581±.020] G2 CL 4X 3.81 [.150] 4X 5° TYP. 4X 0.13±0.08 [.005±.003] SPH 2X 12.70 [.500] 3.76±0.25 [.148±.010] 19.81±0.20 [.780±.008] (1.02 [.040]) h- 4 9 2 4 8 h - 4 _ g w _ r 0 1 _ 0 6 - 0 2 - 2 0 1 4 20.57 [.810] S Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D1, D2 – drain; G1, G2 – gate; S – source (flange). 5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 6. Gold plating thickness: flange – 0.25 micron [10 microinch] max; leads – 1.14 ± 0.38 micron [45 ± 15 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page (www.infineon.com/rfpower) Data Sheet 9 of 10 Rev. 04, 2014-06-16 PTVA093002TC V1 Revision History Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2014-01-08 Advance All New product, proposed only. 02 2014-01-29 Advance All Package type number and configuration revised. 03 2014-05-02 Advance All Package type number revised. 04 2014-06-16 Production All Data Sheet now represents released product specifications, including reference circuit and performance information We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2014-06-16 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 04, 2014-06-16