PTVA123501ECV2XWSA1

PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTVA123501EC Package H-36248-2 PTVA123501FC Package H-37248-2 Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 μs pulse width, 12% duty cycle POUT (dBm) 55 Output Power 50 80 Features 70 • Broadband internal input and output matching • High gain and efficiency • Integrated ESD protection • Low thermal resistance • Excellent ruggedness • Pb-free and RoHS compliant • Capable of withstanding a 10:1 load mismatch (all phase angles) at 55.5 dBm under pulsed conditions: 300 µs pulse width, 12% duty cycle, VDD = 50 V 60 45 50 40 40 1200 MHz 1300 MHz 35 30 1400 MHz Efficiency 30 a123501ec_g1-1 30 32 34 Drain Efficiency (%) 60 36 38 40 20 42 PIN (dBm) RF Characteristics Pulsed RF Performance (tested in Infineon test fixture) VDD = 50 V, IDQ = 0.15 A, POUT = 350 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 µs pulse width, 12% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17 — dB Drain Efficiency D 54 55 — % Return Loss IRL — –12 –9 dB All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 13 Rev. 04.1, 2014-06-26 PTVA123501EC PTVA123501FC RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 150 mA, Input signal (tr = 5 ns, tf = 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test P1dB Mode of Operation ƒ (MHz) IRL (dB) Pulsed RF 1200 Pulsed RF Pulsed RF P3dB Max Pdroop (pulse) dB @ 350 W tr (ns) @ 350 W tf (ns) @ 350 W Gain (dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) –14 16.2 59 375 14.2 59 415 0.10 4 5< 1300 –14 16.0 59 390 14.0 59 435 0.15 4 5< 1400 –12 15.8 56 375 13.8 57 415 0.15 4 5< Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 150 mA, 30 ms pulse width, 30% duty cycle, class AB test Mode of Operation ƒ (MHz) P3dB P1dB Gain (dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) Pdroop (pulse) dB @ 300 W Pulsed RF 1200 16 47 316 14 48 350 0.23 Pulsed RF 1300 16 47 324 14 48 355 0.25 Pulsed RF 1400 15.5 45 315 13.5 47 355 0.29 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1.0 µA VDS = 105 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 —  Operating Gate Voltage VDS = 50 V, IDQ = 150 mA VGS 3 3.35 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 300 W CW) RJC 0.34 °C/W Data Sheet 2 of 13 Rev. 04.1, 2014-06-26 PTVA123501EC Ordering Information Type and Version Order Code Package Description Shipping PTVA123501EC V2 PTVA123501ECV2XWSA1 H-36248-2, bolt-down Tray PTVA123501EC V2 R250 PTVA123501ECV2R250XTMA1 H-36248-2, bolt-down Tape & Reel, 250 pcs PTVA123501FC V1 PTVA123501FCV1XWSA1 H-37248-2, earless Tray PTVA123501FC V1 R250 PTVA123501FCV1R250XTMA1 H-37248-2, earless Tape & Reel, 250 pcs See next page for Typical RF Performance Data Sheet 3 of 13 Rev. 04.1, 2014-06-26 PTVA123501EC PTVA123501FC Typical RF Performance (data taken in production test fixture) Power Sweep, Pulsed RF Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 μs pulse width, 12% duty cycle IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 μs pulse width, 12% duty cycle Output Power 18 70 17 50 60 45 50 40 40 1200 MHz 1300 MHz 35 34 14 1200 MHz 30 13 20 12 1300 MHz 36 38 40 42 a123501ec_g1-2 30 32 34 38 40 42 PIN (dBm) PIN (dBm) Pulsed RF Performance Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 300 μs pulse width, 12% duty cycle IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 300 μs pulse width, 12% duty cycle 0.2 70 18 16 60 Efficiency 14 1150 55 Power Droop (dB) 65 Drain Efficiency (%) 17 15 1250 1300 1350 1400 -14 0.1 -16 IRL 0.05 -18 -20 1500 a123501ec_g1-4 1200 1300 1400 Frequency (MHz) Frequency (MHz) Data Sheet 0.15 0 1100 50 1450 a123501ec_g1-3 1200 -12 Power Droop Gain Gain (dB) 36 IRL (dB) 32 15 1400 MHz a123501ec_g1-1 30 16 1400 MHz Efficiency 30 Gain Gain (dB) POUT (dBm) 55 80 Drain Efficiency (%) 60 4 of 13 Rev. 04.1, 2014-06-26 PTVA123501EC Typical RF Performance (cont.) Power Sweep, Pulsed RF Power Sweep, Pulsed RF IDQ = 150 mA,VDD = 50 V, TCASE = 25°C, 2 ms pulse width, 10% duty cycle IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 2 ms pulse width, 10% duty cycle Output Power 18 70 17 50 60 45 50 40 40 1200 MHz 1300 MHz Efficiency 30 a123501ec_g2-1 31 33 35 37 39 41 Gain 15 14 1200 MHz 1300 MHz 13 1400 MHz 1400 MHz 30 16 12 20 a123501ec_g2-2 31 43 33 35 39 41 43 PIN (dBm) PIN (dBm) Pulsed RF Performance Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 2 ms pulse width, 10% duty cycle IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 2 ms pulse width, 10% duty cycle 17 65 Gain 16 60 Efficiency 15 14 1150 55 Power Droop (dB) 70 Drain Efficiency (%) 18 Gain (dB) 37 1250 1300 1350 1400 0.25 -12 Power Droop 0.2 0.15 -14 -16 IRL 0.05 1100 50 1450 -18 -20 1500 a123501ec_g2-4 1200 1300 1400 Frequency (MHz) Frequency (MHz) Data Sheet -10 0.1 a123501ec_g2-3 1200 0.3 IRL (dB) 35 Gain (dB) POUT (dBm) 55 80 Drain Efficiency (%) 60 5 of 13 Rev. 04.1, 2014-06-26 PTVA123501EC PTVA123501FC Typical RF Performance (cont.) Power Sweep, Pulsed RF Power Sweep, Pulsed RF IDQ = 150 mA,VDD = 50 V, TCASE = 25°C, 16 ms pulse width, 20% duty cycle IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 16 ms pulse width, 20% duty cycle Output Power 18 70 17 50 60 45 50 40 40 1200 MHz 35 1300 MHz Efficiency 14 30 13 20 12 1200 MHz 1300 MHz 37 39 41 a123501ec_g3-2 31 43 33 35 PIN (dBm) 39 41 43 PIN (dBm) Pulsed RF Performance Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 16 ms pulse width, 20% duty cycle IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 16 ms pulse width, 20% duty cycle 70 17 65 Gain 16 60 15 55 -6 0.35 Power Droop (dB) 18 Drain Efficiency (%) Gain (dB) 37 -8 0.3 Power Droop 0.25 -10 0.2 -12 IRL (dB) 35 15 1400 MHz a123501ec_g3-1 33 Gain 1400 MHz 30 31 16 Gain (dB) POUT (dBm) 55 80 Drain Efficiency (%) 60 IRL -14 0.15 Efficiency 14 1150 50 1450 0.1 1100 a123501ec_g3-3 1200 1250 1300 1350 1400 Frequency (MHz) Data Sheet -16 1500 a123501ec_g3-4 1200 1300 1400 Frequency (MHz) 6 of 13 Rev. 04.1, 2014-06-26 PTVA123501EC Typical RF Performance (cont.) Power Sweep, Pulsed RF Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 16 ms pulse width, 50% duty cycle IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 16 ms pulse width, 50% duty cycle Output Power 18 70 17 50 60 45 50 40 40 1200 MHz 35 30 1300 MHz Efficiency 1400 MHz 30 35 37 39 41 Gain 15 14 1200 MHz 1300 MHz 1400 MHz 12 a123501ec_g4-2 31 43 33 35 39 41 43 PIN (dBm) PIN (dBm) Pulsed RF Performance Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 16 ms pulse width, 50% duty cycle IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 16 ms pulse width, 50% duty cycle 70 65 Gain 14 60 13 55 Efficiency 12 1100 Power Droop (dB) 15 0.4 Drain Efficiency (%) 16 Gain (dB) 37 50 1500 1300 1400 Frequency (MHz) Data Sheet 0.3 -4 Power Droop 0.2 -6 0.1 -8 0 1100 a123501ec_g4-3 1200 -2 IRL IRL (dB) 33 16 13 20 a123501ec_g4-1 31 Gain (dB) POUT (dBm) 55 80 Drain Efficiency (%) 60 -10 1500 a123501ec_g4-4 1200 1300 1400 Frequency (MHz) 7 of 13 Rev. 04.1, 2014-06-26 PTVA123501EC PTVA123501FC Broadband Circuit Impedance Z Source  Z Load  D Freq [MHz] R jX R jX 1200 1.25 –1.99 1.96 –2.23 1300 1.54 –1.52 1.59 –2.03 1400 1.66 –1.58 1.26 –1.75 Z Source Z Load G S Load Pull Performance Load Pull at Max POUT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [] 1200 1.91 – j2.04 41.40 56.40 436.52 15 53.80 1.30 – j2.03 1300 2.72 – j3.13 42.24 56.54 450.82 14.30 54.48 1.25 – j1.94 1400 4.83 – j1.46 41.66 56.31 427.56 14.65 53.27 1.03 – j1.94 Load Pull at Max GT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [] 1200 1.91 – j2.04 38.10 54.72 296.48 16.62 57.89 3.03 – j3.11 1300 2.72 – j3.13 38.84 54.83 304.09 15.99 62.54 3.22 – j1.63 1400 4.83 – j1.46 37.21 53.42 219.79 16.21 57.25 2.30 – j0.09 Load Pull at Max Efficiency Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [] 1200 1.91 – j2.04 39.60 55.80 380.19 16.20 60.71 2.22 – j2.43 1300 2.72 – j3.13 39.44 55.23 333.43 15.79 63.71 2.81 – j1.90 1400 4.83 – j1.46 39.39 55.19 330.37 15.80 62.26 2.40 – j1.45 Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [] 1200 1.91 – j2.04 39.18 55.58 361.41 16.4 60.5 2.41 – j2.50 1300 2.72 – j3.13 39.50 55.30 338.84 15.8 62.6 2.73 – j1.51 1400 4.83 – j1.46 40 55.60 363.08 15.6 60.7 1.86 – j1.37 Data Sheet 8 of 13 Rev. 04.1, 2014-06-26 PTVA123501EC Reference Circuit C201 C803 C801 R803 C802 R804 RO6006, .025 (62) C206 C208 + S3 S2 R802 S1 R801 VDD R202 C101 R101 C104 R102 C207 C103 C211 R103 C203 C202 C102 RF_IN RF_OUT C205 C105 C106 C204 VDD R201 C209 C210 PTVA123501EC_IN_02 RO6006, .025 (62) PTVA123501EC_OUT_02 p t v a 1 2 3 5 0 1 e c _ C D _ 0 7 - 1 6 - 2 0 1 3 Reference circuit assembly diagram (not to scale)* Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower Data Sheet 9 of 13 Rev. 04.1, 2014-06-26 PTVA123501EC PTVA123501FC Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA123501EC or PTVA123501FC Test Fixture Part No. LTN/PTVA123501EC V2 or LTN/PTVA123501FC V1 PCB Rogers 6006, 0.635 mm [0.025"] thick, 2 oz. copper, r = 6.15 Components Information Component Description Suggested Manufacturer P/N C101 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C102, C103 Capacitor, 39 pF ATC ATC100B390KW500XB C104 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C105 Capacitor, 3 pF ATC ATC100A3R0CW150XB C106 Capacitor, 0.5 pF ATC ATC100A0R5CW150XB Input C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101 Resistor, 1000  Panasonic Electronic Components ERJ-8GEYJ102V R102 Resistor, 5600  Panasonic Electronic Components ERJ-8GEYJ562V R103, R804 Resistor, 10  Panasonic Electronic Components ERJ-8GEYJ100V R801 Resistor, 2000  Panasonic Electronic Components ERJ-8GEYJ202V R802 Resistor, 1200  Panasonic Electronic Components ERJ-3GEYJ122V R803 Resistor, 1300  Panasonic Electronic Components ERJ-3GEYJ132V S1 Transistor Infineon Technologies BCP56 S2 Voltage Regulator Texas Instruments LM7805 S3 Potentiometer, 2k  Bourns Inc. 3224W-1-202E C201 Capacitor, 6800 µF Panasonic Electronic Components ECO-S2AP682EA C202 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST C203 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C204, C205, C207 Capacitor, 39 pF ATC ATC100B390KW500XB C206, C210 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C208, C209 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C211 Capacitor, 10 µF Panasonic Electronic Components EEV-HD1H100P R201, R202 Resistor, 5600  Panasonic Electronic Components ERJ-8GEYJ562V Output Data Sheet 10 of 13 Rev. 04.1, 2014-06-26 PTVA123501EC Package Outline Specifications Package H-36248-2 ƒ; >ƒ;@ &/ “ >“@ ' 6 )/$1*( >@ /,'  ²  “ > ²@ >“@ &/ ;5 >5@ * ;5 >5@ ; >@  >@ “ >“@  >@ 63+ >@ & / “ >“@ +BSRBB  >@ Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Data Sheet 11 of 13 Rev. 04.1, 2014-06-26 PTVA123501EC PTVA123501FC Package Outline Specifications (cont.) Package H-37248-2 ƒ; >ƒ;@ &/ “ >“@     > 5  @ ;5 '    >   @ /,' )/$1*( >@ “ >“@ &/ * ; >@ 63+ >@ “ >“@  >@ +BSRB “ >“@ 6 &/  >@ Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 12 of 13 Rev. 04.1, 2014-06-26 PTVA123501EC V2/ PTVA123501FC V1 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-06-05 Preliminary All Data Sheet reflects preliminary specification 02 2013-03-06 Production All Data Sheet reflects released product specification 03 2013-07-11 Production All 1 9 12 Updated to include FC version Revised Pulsed RF performance table Minor cosmetic changes only Added package outline 04 2014-04-29 Production All 1 Revised product from V1 to V2 Revised target RF Charateristics table 04.1 2014-06-26 Production All 3 Corrected FC version to V1 throughout Corrected package to H-36248-2 and H-37248-2 in ordering table We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2014-06-26 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 13 of 13 Rev. 04.1, 2014-06-26