S29VS/XS-R MirrorBit® Flash Family
S29VS256R, S29VS128R, S29XS256R, S29XS128R
256/128 Megabit (32/16 Megabyte)
1.8 V Burst 16-bit Data Bus, Simultaneous Read/Write,
Multiplexed MirrorBit Flash Memory
S29VS/XS-R MirrorBit ® Flash Family Cover Sheet
Data Sheet (Advance Information)
Notice to Readers: This document states the current technical specifications regarding the Spansion
product(s) described herein. Each product described herein may be designated as Advance Information,
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.
Publication Number S29VS_XS-R_00
Revision 08
Issue Date July 30, 2012
Da t a
Sh e e t
( A d va n ce
In for ma t i on )
Notice On Data Sheet Designations
Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of
product information or intended specifications throughout the product life cycle, including development,
qualification, initial production, and full production. In all cases, however, readers are encouraged to verify
that they have the latest information before finalizing their design. The following descriptions of Spansion data
sheet designations are presented here to highlight their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion Inc. is developing one or more specific
products, but has not committed any design to production. Information presented in a document with this
designation is likely to change, and in some cases, development on the product may discontinue. Spansion
Inc. therefore places the following conditions upon Advance Information content:
“This document contains information on one or more products under development at Spansion Inc.
The information is intended to help you evaluate this product. Do not design in this product without
contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a commitment
to production has taken place. This designation covers several aspects of the product life cycle, including
product qualification, initial production, and the subsequent phases in the manufacturing process that occur
before full production is achieved. Changes to the technical specifications presented in a Preliminary
document should be expected while keeping these aspects of production under consideration. Spansion
places the following conditions upon Preliminary content:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. The Preliminary status of this document indicates that product qualification has been
completed, and that initial production has begun. Due to the phases of the manufacturing process that
require maintaining efficiency and quality, this document may be revised by subsequent versions or
modifications due to changes in technical specifications.”
Combination
Some data sheets contain a combination of products with different designations (Advance Information,
Preliminary, or Full Production). This type of document distinguishes these products and their designations
wherever necessary, typically on the first page, the ordering information page, and pages with the DC
Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first
page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal changes
are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include
those affecting the number of ordering part numbers available, such as the addition or deletion of a speed
option, temperature range, package type, or VIO range. Changes may also include those needed to clarify a
description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following
conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. Spansion Inc. deems the products to have been in sufficient production volume such
that subsequent versions of this document are not expected to change. However, typographical or
specification corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local sales office.
2
S29VS/XS-R MirrorBit® Flash Family
S29VS_XS-R_00_08 July 30, 2012
S29VS/XS-R MirrorBit® Flash Family
S29VS256R, S29VS128R, S29XS256R, S29XS128R
256/128 Megabit (32/16 Megabyte)
1.8 V Burst 16-bit Data Bus, Simultaneous Read/Write,
Multiplexed MirrorBit Flash Memory
Data Sheet (Advance Information)
Features
Single 1.8 V supply for read/program/erase (1.70–1.95 V)
10-year data retention (typical)
65 nm MirrorBit Technology
Cycling Endurance: 100,000 cycles per sector (typical)
Address and Data Interface Options
RDY output indicates data available to system
– Address and Data Multiplexed for reduced I/O count
(ADM) S29VS-R
– Address-High, Address-Low, Data Multiplexed for minimum I/O
count (AADM) S29XS-R
Simultaneous Read/Write operation
Command set compatible with JEDEC (42.4) standard
Hardware sector protection via VPP pin
Handshaking by monitoring RDY
Offered Packages
– 44-ball FBGA (6.2 mm x 7.7 mm x 1.0 mm)
32-word Write Buffer
Low VCC write inhibit
Bank architecture
– Eight-bank
Four 32-KB sectors at the top or bottom of memory array
255/127 of 128-KB sectors
Programmable linear (8/16-word) with wrap around and
continuous burst read modes
Secured Silicon Sector region consisting of 128 words each
for factory and customer
Write operation status bits indicate program and erase
operation completion
Suspend and Resume commands for Program and Erase
operations
Asynchronous program operation, independent of burst
control register settings
VPP input pin to reduce factory programming time
Support for Common Flash Interface (CFI)
General Description
The Spansion S29VS256/128R and S29XS256/128R are MirrorBit® Flash products fabricated on 65 nm process technology.
These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two
separate banks using multiplexed data and address pins. These products can operate up to 108 MHz and use a single VCC of
1.7 V to 1.95 V that makes them ideal for the demanding wireless applications of today that require higher density, better
performance, and lowered power consumption. The S29VS256/128R operates in ADM mode, while the S29XS256/128R can
operate in the AADM mode.
Performance Characteristics
Read Access Times
Speed Option (MHz)
Current Consumption (typical values)
108
Continuous Burst Read @ 108 MHz
32 mA
Max. Synch. Latency, ns (tIA)
72.34
Simultaneous Operation @ 108 MHz
71 mA
Max. Synch. Burst Access, ns (tBACC)
6.75
Program/Erase
30 mA
Max. Asynch. Access Time, ns (tACC)
80
Standby Mode
30 µA
Max OE# Access Time, ns (tOE)
15
Typical Program & Erase Times
Single Word Programming
170 µs
Effective Write Buffer Programming (VCC) Per Word
14.1 µs
Effective Write Buffer Programming (VPP) Per Word
Publication Number S29VS_XS-R_00
9 µs
Sector Erase (16 Kword Sector)
350 ms
Sector Erase (64 Kword Sector)
800 ms
Revision 08
Issue Date July 30, 2012
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.
Da t a
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Table of Contents
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
4
1.
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.1
Valid Combinations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.
Input/Output Descriptions & Logic Symbol. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.
Block Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.
Physical Dimensions/Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2
Special Handling Instructions for FBGA Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.
Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.
Address Space Maps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.1
Data Address & Quantity Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.2
Flash Memory Array. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.3
Address/Data Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.4
Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.5
Device ID and CFI (ID-CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
14
15
17
18
19
7.
Device Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.1
Asynchronous Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.2
Synchronous (Burst) Read Mode and Configuration Register . . . . . . . . . . . . . . . . . . . . . . . .
7.3
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.4
Blank Check. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.5
Simultaneous Read/Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.6
Writing Commands/Command Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.7
Program/Erase Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.8
Handshaking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.9
Hardware Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.10 Software Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
21
22
22
28
31
31
32
32
38
39
39
8.
Sector Protection/Unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.1
Sector Lock/Unlock Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.2
Sector Lock Range Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.3
Hardware Data Protection Methods. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.4
SSR Lock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.5
Secure Silicon Region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
39
39
40
40
41
41
9.
Power Conservation Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.1
Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.2
Automatic Sleep Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.3
Output Disable (OE#). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
43
43
43
43
10.
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.2 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.3 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.4 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.5 AC Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.6 Key to Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.7 VCC Power Up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.8 CLK Characterization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.9 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
44
44
44
45
46
46
46
47
47
48
11.
Appendix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
11.1 Command Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
11.2 Device ID and Common Flash Memory Interface Address Map . . . . . . . . . . . . . . . . . . . . . . 58
12.
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
S29VS/XS-R MirrorBit® Flash Family
S29VS_XS-R_00_08 July 30, 2012
Dat a
S he e t
( Ad van ce
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Figures
Figure 3.1
Figure 4.1
Figure 4.2
Figure 7.1
Figure 10.1
Figure 10.2
Figure 10.3
Figure 10.4
Figure 10.5
Figure 10.6
Figure 10.7
Figure 10.8
Figure 10.9
Figure 10.10
Figure 10.11
Figure 10.12
Figure 10.13
Figure 10.14
Figure 11.1
Figure 11.2
Figure 11.3
Figure 11.4
Figure 11.5
Figure 11.6
Figure 11.7
Figure 11.8
Figure 11.9
Figure 11.10
Figure 11.11
Figure 11.12
Figure 11.13
July 30, 2012 S29VS_XS-R_00_08
Simultaneous Operation Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
44-Ball Very Thin Fine-Pitch Ball Grid Array, Top View, Balls Facing Down . . . . . . . . . . . . . 10
VDJ044—44-Ball Very Thin Fine-Pitch Ball Grid Array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Synchronous Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Maximum Negative Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Maximum Positive Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Input Pulse and Test Point. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
VCC Power-up Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
CLK Characterization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Synchronous Read Mode - ADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Asynchronous Mode Read - ADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Asynchronous Program Operation Timings - ADM Interface. . . . . . . . . . . . . . . . . . . . . . . . . 50
Reset Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Latency with Boundary Crossing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Latency with Boundary Crossing into Bank Performing Embedded Operation . . . . . . . . . . . 52
Example of Programmable Wait States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Back-to-Back Read/Write Cycle Timings - ADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Asynchronous Read - AADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63
Asynchronous Read Followed By Read - AADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . .63
Asynchronous Read Followed By Write - AADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . .64
Asynchronous Write - AADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .64
Asynchronous Write Followed By Read - AADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . .65
Asynchronous Write Followed By Write - AADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . .65
Synchronous Read Wrapped Burst Address Low Only - AADM Interface . . . . . . . . . . . . . . .66
Synchronous Read Continuous Burst - AADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . .66
Synchronous Read Wrapped Burst - AADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .67
Synchronous Read Followed By Read Burst - AADM Interface . . . . . . . . . . . . . . . . . . . . . . .67
Synchronous Read Followed By Write - AADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . .68
Synchronous Write Followed By Read Burst - AADM Interface . . . . . . . . . . . . . . . . . . . . . . .68
Synchronous Write Followed By Write - AADM Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . .69
S29VS/XS-R MirrorBit® Flash Family
5
Da t a
Sh e e t
( A d va n ce
In for ma t i on )
Tables
Table 2.1
Table 6.1
Table 6.2
Table 6.3
Table 6.4
Table 6.5
Table 6.6
Table 6.7
Table 6.8
Table 7.1
Table 7.2
Table 7.3
Table 7.4
Table 7.5
Table 7.6
Table 7.7
Table 7.8
Table 7.9
Table 7.10
Table 7.11
Table 7.12
Table 7.13
Table 7.14
Table 7.15
Table 7.16
Table 7.17
Table 7.18
Table 7.19
Table 7.20
Table 7.21
Table 7.22
Table 7.23
Table 7.24
Table 7.25
Table 7.26
Table 7.27
Table 7.28
Table 8.1
Table 8.2
Table 8.3
Table 10.1
Table 10.2
Table 11.1
Table 11.2
6
Input/Output Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
System Versus Flash View of Address . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
S29VS/XS256R Sector and Memory Address Map (Top Boot) . . . . . . . . . . . . . . . . . . . . . . .15
S29VS/XS256R Sector and Memory Address Map (Bottom Boot) . . . . . . . . . . . . . . . . . . . . .15
S29VS/XS128R Sector and Memory Address Map (Top Boot) . . . . . . . . . . . . . . . . . . . . . . .16
S29VS/XS128R Sector and Memory Address Map (Bottom Boot) . . . . . . . . . . . . . . . . . . . . .16
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
ID-CFI Address Map Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Secured Silicon Region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Initial Wait State vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
Address Latency for 10 -13 Wait States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
Address Latency for 9 Wait States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
Address Latency for 8 Wait States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Address Latency for 7 Wait States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Address Latency for 6 Wait States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Address Latency for 5 Wait States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Address Latency for 4 Wait States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Address Latency for 3 Wait States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Burst Address Groups . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Status Register Reset State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Status Register - Bit 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Status Register - Bit 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
Status Register - Bit 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
Status Register - Bit 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
Status Register - Bit 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Status Register - Bit 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Status Register - Bit 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Status Register - Bit 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
Write Buffer Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
Program Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
Program Resume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
Sector Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
Chip Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
Erase Resume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39
Secured Silicon Region Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
Secured Silicon Region Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
Secured Silicon Region Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
VCC Power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .47
Warm-Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51
Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56
ID/CFI Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58
S29VS/XS-R MirrorBit® Flash Family
S29VS_XS-R_00_08 July 30, 2012
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Ordering Information
The ordering part number is formed by a valid combination of the following:
S29VS
256
R
xx
BH
W
00
0
Packing Type
0 = Tray (standard; see note (Note 1))
3 = 13-inch Tape and Reel
Model Number
00 = Top
01 = Bottom
Temperature Range
W = Wireless (–25°C to +85°C)
Package Type and Material
BH = Very Thin Fine-Pitch BGA, Low Halogen Lead (Pb)-Free Package
Speed Option (Burst Frequency)
0S = 83 MHz
AA = 104 MHz
AB = 108 MHz
Process Technology
R = 65 nm MirrorBit® Technology
Flash Density
256 = 256 Mb
128 = 128 Mb
Device Family
S29VS256R =1.8 Volt-only Simultaneous Read/Write, Burst-Mode Address and Data
Multiplexed Flash Memory
S29XS256R =1.8 Volt-only Simultaneous Read/Write, Burst-Mode Address Low,
Address High and Data Multiplexed Flash Memory
1.1
Valid Combinations
Valid Combination list configurations are planned to be supported in volume for this device. Consult your local
sales office to confirm availability of specific valid combinations and to check on newly released
combinations.
S29VS-R Valid Combinations (1) (2)
Base Ordering
Part Number
Speed Option
Package Type, Material,
and Temperature Range
Packing
Type
Model
Numbers
Package Type
(2)
0S, AA, AB
BHW (3)
0, 3 (1)
00, 01
6.2 mm x 7.7 mm, 44-ball
S29VS256R
S29VS128R
S29XS256R
S29XS128R
Notes:
1. Type 0 is standard. Specify other options as required.
2. BGA package marking omits leading S29 and packing type designator from ordering part number.
3. Industrial Temperature Range is also available. For device specification differences, please refer to the Specification Supplement with
Publication Number S29VS_XS-R_SP.
July 30, 2012 S29VS_XS-R_00_08
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Input/Output Descriptions & Logic Symbol
Table 2.1 identifies the input and output package connections provided on the device.
Table 2.1 Input/Output Descriptions
Symbol
Type
Amax – A16
A/DQ15 – A/DQ0
I/O
CE#
Input
Flash Chip Enable. Asynchronous relative to CLK.
OE#
Input
Output Enable. Asynchronous relative to CLK for the Burst mode.
WE#
Input
Write Enable
VCC
Supply
Device Power Supply
VCCQ
Supply
Input/Output Power Supply (must be ramped simultaneously with VCC)
VSS
I/O
Ground
VSSQ
I/O
Input/Output Ground
NC
No Connect
No Connected internally
RDY
Output
Ready. Indicates when valid burst data is ready to be read
Input
The first rising edge of CLK in conjunction with AVD# low latches address input and activates burst
mode operation. After the initial word is output, subsequent rising edges of CLK increment the
internal address counter. CLK should remain low during asynchronous access
AVD#
Input
Address Valid input. Indicates to device that the valid address is present on the address inputs
(address bits A15 – A0 are multiplexed, address bits Amax – A16 are address only).
VIL = for asynchronous mode, indicates valid address; for burst mode, cause staring address to be
latched on rising edge of CLK.
VIH = device ignores address inputs
RESET#
Input
Hardware Reset. Low = device resets and returns to reading array data.
VPP
Input
Accelerated input.
At VHH, accelerates programming; automatically places device in unlock bypass mode.
At VIL, disables all program and erase functions.
Should be at VIH for all other conditions.
RFU
Reserved
Reserved for future use
CLK
8
Description
Higher order address lines. Amax = A23 for VS256R, A22 for VS128R.
On the XS256R and XS128R, these inputs can be left unconnected in AADM mode.
Multiplexed Address/Data input/output
S29VS/XS-R MirrorBit® Flash Family
S29VS_XS-R_00_08 July 30, 2012
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Block Diagrams
Figure 3.1 Simultaneous Operation Circuit
Bank Address
Bank 0
Latches and
Control Logic
VSS
VSSQ
Y-Decoder
VCC
DQ15–DQ0
Amax–A0
X-Decoder
OE#
VPP
RESET#
WE#
CE#
AVD#
RDY
Bank 1
Latches and
Control Logic
Y-Decoder
Bank Address
DQ15–DQ0
X-Decoder
Amax–A0
STATE
CONTROL
&
COMMAND
REGISTER
DQ15–DQ0
Status
Control
Amax–A0
DQ15–DQ0
Bank (n-1)
Latches and
Control Logic
Bank Address
Amax–A0
Y-Decoder
X-Decoder
DQ15–DQ0
Bank (n)
Latches and
Control Logic
Bank Address
Y-Decoder
X-Decoder
DQ15–DQ0
Notes:
1. Amax = A23 for S29VS/XS256R, A22 for S29VS/XS128R.
2. Bank(n) = 8 (S29VS/XS256/128R).
July 30, 2012 S29VS_XS-R_00_08
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Physical Dimensions/Connection Diagrams
This section shows the I/O designations and package specifications for the S29VS-R.
4.1
Related Documents
The following documents contain information relating to the S29VS-R devices. Click on the title or go to
www.spansion.com, or request a copy from your sales office.
Considerations for X-ray Inspection of Surface-Mounted Flash Integrated Circuits
4.2
Special Handling Instructions for FBGA Package
Special handling is required for Flash Memory products in FBGA packages.
Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The
package and/or data integrity may be compromised if the package body is exposed to temperatures above
150°C for prolonged periods of time.
4.2.1
44-Ball Very Thin Fine-Pitch Ball Grid Array, S29VS256R/S29XS256R/
S29VS128R/S29XS128R
Figure 4.1 44-Ball Very Thin Fine-Pitch Ball Grid Array, Top View, Balls Facing Down
1
2
3
4
5
6
7
8
9
10
11
12
13
14
A
NC
NC
B
C
RDY
A21
VSS
CLK
VCC
WE#
VPP
A19
A17
A22
VCCQ
A16
A20
AVD#
A23
RESET#
NC
A18
CE#
VSSQ
VSS
A/DQ7
A/DQ6
A/DQ13 A/DQ12
A/DQ3
A/DQ2
A/DQ9
A/DQ8
OE#
A/DQ15 A/DQ14
VSSQ
A/DQ5
A/DQ11 A/DQ10
VCCQ
A/DQ1
A/DQ0
D
E
F
A/DQ4
G
H
NC
NC
Notes:
1. Ball D7 is NC for S29VS128R.
2. Balls D7, C12, C4, D5, C10, D10, C11, D4 are NC for S29XS256R and S29XS128R
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S29VS/XS-R MirrorBit® Flash Family
S29VS_XS-R_00_08 July 30, 2012
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VDJ044-44-Ball Very Thin Fine-Pitch Ball Grid Array, 6.2mm x 7.7 mm
Figure 4.2 VDJ044—44-Ball Very Thin Fine-Pitch Ball Grid Array
NOTES:
PACKAGE
VDJ 044
JEDEC
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
N/A
2. ALL DIMENSIONS ARE IN MILLIMETERS.
7.70 mm x 6.20 mm NOM
PACKAGE
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010
EXCEPT AS NOTED).
SYMBOL
MIN
NOM
MAX
NOTE
A
0.86
0.93
1.00
OVERALL THICKNESS
A1
0.18
0.23
0.28
BALL HEIGHT
A2
0.64
0.71
0.78
BODY THICKNESS
D
7.60
7.70
7.80
BODY SIZE
E
6.10
6.20
6.30
BODY SIZE
D1
4.50 BSC.
BALL FOOTPRINT
E1
1.50 BSC.
BALL FOOTPRINT
MD
10
ROW MATRIX SIZE D DIRECTION
ME
4
ROW MATRIX SIZE E DIRECTION
N
44
Øb
0.25
0.30
TOTAL BALL COUNT
0.35
BALL DIAMETER
e
0.50 BSC.
BALL PITCH
SD / SE
0.25 BSC.
SOLDER BALL PLACEMENT
DEPOPULATED SOLDER BALLS
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3616 \ 16-039.27 \ 12.5.6
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Product Overview
The S29VS/XS-R family is 1.8-V only, simultaneous read/write, burst-mode, Flash devices. These devices
have a 16 bit (word) wide data bus. All read accesses provide 16 bits of data on each bus transfer cycle. All
writes take 16 bits of data from each bus transfer cycle.
Device
Mbits
Mbytes
Mwords
Banks
Mbytes / Bank
S29VS128R/S29XS128R
128
16
8
8
2
S29VS256R/S29XS256R
256
32
16
8
4
The Flash memory array is divided into banks. A bank is the address range within which one program, or
erase operation may be in progress at the same time as one read operation is in progress in any other bank
of the memory. This multiple bank structure enables Simultaneous Read and Write (SRW) so that code may
be executed or data read from one bank while a group of data is programmed, or erased as a background
task in one other bank.
Each bank is divided into sectors. A sector is the minimum address range of data which can be erased to an
all Ones state. Most of the sectors are 128 KBytes each. Depending on the option ordered, either the top-4
sectors or the bottom-4 sectors are 32 KBytes each. These are called boot sectors because they are often
used for holding boot code or parameters that need to be protected or erased separately from other data in
the Flash array.
Programming is done via a 64 Byte write buffer. It is possible to program from one to 32 words (64 bytes) in
each programming operation.
The S29VS/XS family is capable of continuous, synchronous (burst) read or linear read (8- or 16-word
aligned group) with wrap around. A wrapped burst begins at the initial location and continues to the end of an
8, or 16-word aligned group then “wraps-around” to continue at the beginning of the 8, or 16-word aligned
group. The burst completes with the last word before the initial location. Word wrap around burst is generally
used for processor cache line fill.
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S29VS/XS-R MirrorBit® Flash Family
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Address Space Maps
There are five address spaces within each device:
A Non-Volatile Flash Memory Array used for storage of data that may be randomly accessed by
asynchronous or burst read operations.
A Read Only Memory Array used for factory programmed permanent device characteristics information.
This area contains the Device Identification (ID) and Common Flash Interface (CFI) information.
A One Time Programmable (OTP) Non-volatile Flash array used for factory programmed permanent data,
and customer programmable permanent data. This is called the Secure Silicon Region (SSR).
An OTP location used to permanently protect the SSR. This is call the SSR Lock.
A volatile register used to configure device behavior options. This is called the Configuration Register.
The main Flash Memory Array is the primary and default address space but, it may be partially overlaid by the
other four address spaces with one alternate address space available at any one time. The location where the
alternate address space is overlaid is defined by the address provided in the command that enables each
overlay. The portion of the command address that is sufficient to select a sector is used to select the sector
that is overlaid by an alternate Address Space Overlay (ASO).
Any address range, within the overlaid sector, not defined by an overlay address map, is reserved for future
use. All read accesses outside of an address map within the selected sector, return non-valid data. The
locations will display actively driven data but the meaning of whatever ones or zeros appear are not defined.
There are three operation modes for each bank that determine what portions of the address space are
readable at any given time:
Read Mode
Embedded Algorithm (EA) Mode
Address Space Overlay (ASO) Mode
Each bank of the device can be in any operation mode but, only one bank can be in EA or ASO mode at any
one time.
In Read Mode, a Flash Memory Array bank may be directly read by asynchronous or burst accesses from the
host system bus. The Control Unit (CU) puts all banks in Read mode during Power-on, a Hardware Reset,
after a Command Reset, or after a bank is returned to Read mode from EA mode.
In EA mode the Flash memory array data in a bank is stable but undefined, and effectively unavailable for
read access from the host system. While in EA mode the bank is used by the CU in the execution of
commands. Typical EA mode operations are programming or erasing of data in the Flash array. All other
banks are available for read access while the one bank is in EA mode. This ability to read from one bank
while another bank is used in the execution of a command is called Simultaneous Read and Write (SRW) and
allows for continued operation of the system via the reading of data or execution of code from other banks
while one bank is programming or erasing data as a relatively long time frame background task.
In ASO mode, one of the overlay address spaces are overlaid in a bank (entered). That bank is in ASO mode
and no other bank may be in EA or ASO mode. All EA activity must be completed before entering any ASO
mode. A command for entering an EA or ASO mode while another bank is in EA or ASO mode will be
ignored.
While an ASO mode is active (entered) in a bank, a read for Flash array data to any other bank is allowed.
ASO mode selects a specific sector for the overlaid address space. Other sectors in the ASO bank still
provide Flash array data and may be read during ASO mode.
The ASOs are functionally tied to the lowest address bank. The commands used to overlay (enter) these
areas must select a sector address within the lowest address bank.
While SSR Lock, SSR, or Configuration Register is overlaid only the SSR Lock, SSR, or Configuration
Register respectively may be programmed in the overlaid sector. While any of these ASO areas are being
programmed the ASO bank switches to EA mode. The ID/CFI and factory portion of the SSR ASO is not
customer programmable.
The address nomenclature used in this document is a shorthand form that shows addresses are formed from
a concatenation of high order bits, sufficient to select a Sector Address (SA), with low order bits to select a
location within the sector. When in Read mode and reading from the Flash Array the entire address is used to
July 30, 2012 S29VS_XS-R_00_08
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select a specific word for asynchronous read or the starting word address of a burst read. When writing a
command, the address bits between SA and the command specified least significant bits must be Zero to
allow for future extension of an overlay address map.
6.1
Data Address & Quantity Nomenclature
A Bit is a single One or Zero data value. A Byte is a group of 8 bits aligned on an 8 bit boundary. A Word is a
group of 16 bits aligned on a 16 bit boundary.
Throughout this document quantities of data are generally expressed in terms of byte units. Example:
most sectors have 128 Kilo Bytes of data and is written as 128 KBytes or 128 KB. Addresses are also
expressed in byte units. A 128 KByte sector has an address range from 00000h to 1FFFFh Byte locations.
Byte units are used because most host systems and software for these systems use byte resolution
addresses. Software & hardware developers most often calculate code and data sizes in terms of bytes, so
this is more familiar terminology than describing data sizes in bits or words. In general, data units will not be
abbreviated if possible so that full unit names of Byte, Word, or bit are used. However, there may be cases
where capital B is used for byte units and lower case b is used for bit units, in situations where space is
limited such as in table column headers.
In some cases data quantities will also be expressed in word or bit units in addition to the quantity shown in
bytes. This may be done as an aid to readers familiar with prior device generation documentation which often
provided only word or bit unit values. Word units may also be used to emphasize that, in the memory devices
described in this documentation, data is always exchanged with the host system in word units. Each bus
cycle transfer of read or write data on the host system bus is a transfer 16 bits of data. A read bus cycle is
always a16 bit wide transfer of data to the host system whether the host system chooses to look at all the bits
or not. A write bus cycle is always a transfer of 16 bits to the memory device and the device will store all 16
bits to a register. In the case of a program operation all 16 bits of each word to be programmed will be stored
in the Flash array.
Because data is always transferred in word units, the memory devices being discussed use only the address
signals from the system necessary to select words. The host system byte address uses system address a0 to
select bytes and a1 to select words. Flash memories with word wide data paths have traditionally started their
address signal numbering with A0 being the selector for words because a byte select input is not needed. So,
system address a-maximum to a1 are connected to Flash A-maximum to A0 (the documentation convention
here is to use lower case for system address signal numbering and upper case for Flash address signals). In
prior generation Flash documentation, address values used in commands to the flash were documented from
the viewpoint of the Flash device - the bit pattern appearing on Flash address inputs A10 to A0. However,
most software is written with addresses expressed in bytes. This means the address patterns shown in Flash
command tables have traditionally been shifted by one bit to express them as byte address values in Flash
control programs. Example: a prior generation Flash data sheet would show a command write of data value
xxA0h to address 555h; this is an address pattern of 10101010101b on Flash address inputs A10 to A0; but
software would define this as a byte address value of AAAh since the least significant address bit is not used
by the Flash); which is 101010101010b on system address bus a11 to a0. Because system a11 to a1 is
connected to Flash A10 to A0 the Flash word address of 555h and the system byte address of AAAh provides
the same bit pattern on the same address inputs. Because all address values are being documented as
system byte addresses, that are more familiar to software writers, the command tables have addresses that
are shifted from those shown in prior generation devices.
14
S29VS/XS-R MirrorBit® Flash Family
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Flash Memory Array
The Non-Volatile Flash Memory Array is organized as shown in the following tables. Devices are factory
configured to have either all uniform size sectors or four smaller sectors at either the top of the device.
Table 6.1 System Versus Flash View of Address
System Address Signals
a11
a10
1
0
System Byte Address Hex
Binary Pattern
a9
a8
a7
a6
1
0
1
0
A
Flash Word Address Hex
A10
a4
a3
a2
1
0
1
a0
0
1
0
A1
A0
A
5
A9
a1
A
5
Flash Address Signals
a5
A8
A7
A6
5
A5
A4
A3
A2
Table 6.2 S29VS/XS256R Sector and Memory Address Map (Top Boot)
224
Sector Size
(KByte)
Bank
128
Sector
Range
Address
Range (word)
Address
Range (byte)
0
SA000-SA031
000000h–1FFFFFh
000000h–3FFFFFh
1
SA032–SA063
2
SA064–SA095
3
SA096–SA127
4
SA128–SA159
5
SA160–SA191
SA192–SA223
… … … … … …
Sector
Count
… … … … … …
Bank
Size
(Mbit)
SA224–SA254
E00000h–FEFFFFh
1C00000h–1FDFFFFh
SA255
FF0000h–FF3FFFh
1FE0000h–1FE7FFFh
SA256
FF4000h-FF7FFFh
1FE8000h-1FEFFFFh
SA257
FF8000h–FFBFFFh
1FF0000h–1FF7FFFh
SA258
FFC000h–FFFFFFh
1FF8000h–1FFFFFFh
32
6
31
4
128
7
32
Notes
Sector Starting
Address –
Sector Ending
Address
Note:
All tables have been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges
that are not explicitly listed (such as SA008–SA009) have sector starting and ending addresses that form the same pattern as all other
sectors of that size. For example, all 128 KB sectors have the byte address pattern x000000h–x1FFFFh.
Table 6.3 S29VS/XS256R Sector and Memory Address Map (Bottom Boot)
Bank
Size
(Mbit)
Sector
Count
4
Sector Size
(Kbyte)
Bank
Address
Range (word)
Address
Range (byte)
SA000
000000h–003FFFh
000000h–007FFFh
SA001
004000h–007FFFh
008000h–00FFFFh
010000h–017FFFh
00C000h–00FFFFh
018000h–01FFFFh
SA004–SA034
010000h–1FFFFFh
020000h–3FFFFFh
1
SA035–SA066
2
SA067–SA098
3
SA099–SA130
4
SA131–SA162
5
SA163–SA194
6
SA195–SA226
… … … … … …
008000h–00BFFFh
SA003
… … … … … …
128
SA002
7
SA227–SA258
E00000h–FFFFFFh
1C00000h–1FFFFFFh
32
224
Notes
32
0
31
Sector
Range
128
Sector Starting
Address –
Sector Ending Address
Note:
All tables have been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges
that are not explicitly listed (such as SA008–SA009) have sector starting and ending addresses that form the same pattern as all other
sectors of that size. For example, all 128 KB sectors have the byte address pattern x000000h–x1FFFFh.
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Sector
Count
112
Sector Size
(KByte)
128
Bank
Sector
Range
Address
Range (word)
Address
Range (byte)
0
SA000-SA015
000000h–0FFFFFh
000000h–1FFFFFh
1
SA016–SA031
2
SA032–SA047
3
SA048–SA063
4
SA064–SA079
5
SA080–SA095
6
SA096–SA111
… … … … … …
Bank
Size
(Mbit)
… … … … … …
Table 6.4 S29VS/XS128R Sector and Memory Address Map (Top Boot)
SA112–SA126
700000h–7EFFFFh
E00000h–FDFFFFh
SA127
7F0000h–7F3FFFh
FE0000h–FE7FFFh
SA128
7F4000h-7F7FFFh
FE8000h-FEFFFFh
SA129
7F8000h–7FBFFFh
FF0000h–FF7FFFh
SA130
7FC000h–7FFFFFh
FF8000h–FFFFFFh
16
15
128
7
4
Notes
Sector Starting
Address –
Sector Ending
Address
32
Note:
All tables have been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges
that are not explicitly listed (such as SA008–SA009) have sector starting and ending addresses that form the same pattern as all other
sectors of that size. For example, all 128 KB sectors have the byte address pattern x000000h–x1FFFFh.
Table 6.5 S29VS/XS128R Sector and Memory Address Map (Bottom Boot)
Bank
Size
(Mbit)
Sector
Count
4
Sector Size
(Kbyte)
Bank
Address
Range (word)
Address
Range (byte)
SA000
000000h–003FFFh
000000h–007FFFh
SA001
004000h–007FFFh
008000h–00FFFFh
SA002
008000h–00BFFFh
010000h–017FFFh
SA003
00C000h–00FFFFh
018000h–01FFFFh
SA004–SA018
010000h–0FFFFFh
020000h–1FFFFFh
1
SA019–SA034
2
SA035–SA050
3
SA051–SA066
4
SA067–SA082
5
SA083–SA098
6
SA099–SA114
… … … … … …
… … … … … …
128
7
SA115–SA130
700000h–7FFFFFh
E00000h–FFFFFFh
16
112
Notes
32
0
15
Sector
Range
128
Sector Starting
Address –
Sector Ending
Address
Note:
All tables have been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges
that are not explicitly listed (such as SA008–SA009) have sector starting and ending addresses that form the same pattern as all other
sectors of that size. For example, all 128 KB sectors have the byte address pattern x000000h–x1FFFFh.
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6.3
S he e t
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Address/Data Interface
There are two options for connection to the address and data buses.
Address and Data Multiplexed (ADM) mode. On the S29VS-R devices, the upper address is supplied on
separate signal inputs and the lower 16-bits of address are multiplexed with 16-bit data on the A/DQ15 to
A/DQ0 I/Os.
Address-high, Address-low, and Data Multiplexed (AADM) mode. On the S29XS-R devices, the upper and
lower address are multiplexed with 16-bit data on the A/DQ15 to A/D0 signal I/Os.
The two options allow use with the traditional address/data multiplexed NOR interface (S29NS family), or an
address multiplexed/data multiplexed interface with the lowest signal count.
6.3.1
ADM Interface (S29VS256R and S29VS128R)
A number of processors use ADM interface as a way to reduce pin count. The system permanently connects
the upper address bits (A[MAX:16] to the device. When AVD# is LOW it connects A[15:0] to DQ[15:0]. The
address is latched on the rising edge of AVD#. When AVD# is HIGH, the system connects the data bus to
DQ[15:0]. This results in 16-pin savings from the traditional Address and Data in Parallel (ADP) interface.
6.3.2
AADM Interface (S29XS256R and S29XS128R)
Signal input and output (I/O) connections on a high complexity component such as an Application Specific
Integrated Circuit (ASIC) are a limited resource. Reducing signal count on any interface of the ASIC allows for
either more features or lower package cost. The memory interface described in this section is intended to
reduce the I/O signal count associated with the Flash memory interface with an ASIC.
The interface is called Address-High, Address-Low, and Data Multiplexed (AADM) because all address and
data information is time multiplexed on a single 16-bit wide bus. This interface is electrically compatible with
existing ADM 16-bit wide random access static memory interfaces but uses fewer address signals. In that
sense AADM is a signal count subset of existing static memory interfaces. This interface can be implemented
in existing memory controller designs, as an additional mode, with minimal changes. No new
I/O technology is needed and existing memory interfaces can continue to be supported while the electronics
industry adopts this new interface. ASIC designers can reuse the existing memory address signals above
A15 for other functions when an AADM memory is in use.
By breaking up the memory address in to two time slots the address is naturally extended to be a 32-bit word
address. But, using two bus cycles to transfer the address increases initial access latency by increasing the
time address is using the bus. However, many memory accesses are to locations in memory nearby the
previous access. Very often it is not necessary to provide both cycles of address. This interface stores the
high half of address in the memory so that if the high half of address does not change from the previous
access, only the low half of address needs to be sent on the bus. If a new upper address is not captured at
the beginning of an access the last captured value of the upper address is used. This allows accesses within
the same 128-KByte address range to provide only the lower address as part of each access.
In AADM mode two signal rising edges are needed to capture the upper and lower address portions in
asynchronous mode or two signal combinations over two clocks is needed in synchronous mode. In
asynchronous mode the upper address is captured by an AVD# rising edge when OE# is Low; the lower
address is captured on the rising edge of AVD# with OE# High. In synchronous mode the upper address is
captured at the rising clock edge when AVD# and OE# are Low; the lower address is captured at the rising
edge of clock when AVD# is Low and OE# is High.
CE# going High at any time during the access or OE# returning High after RDY is first asserted High during
an access, terminates the read access and causes the address/data bus direction to switch back to input
mode. The address/data bus direction switches from input to output mode only after an Address-Low capture
when AVD# is Low and OE# is High. This prevents the assertion of OE# during Address-High capture from
causing a bus conflict between the host address and memory data signals. Note, in burst mode, this implies
at least one cycle of CE# or OE# High before an Address-high for a new access may be placed on the bus so
that there is time for the memory to recognize the end of the previous access, stop driving data outputs, and
ignore OE# so that assertion of OE# with the new Address-high does not create a bus conflict with a new
address being driven on the bus. At high bus frequencies more than one cycle may be need in order to allow
time for data outputs to stop driving and new address to be driven (bus turn around time).
During a write access, the address/data bus direction is always in the input mode.
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The upper address is set to Zero or all Ones, for bottom or top boot respectively, during a Hardware Reset,
operate in ADM mode during the early phase of boot code execution where only a single address cycle would
be issued with the lower 16 bit of the address reaching the memory in AADM mode. The default high order
address bits will direct the early boot accesses to the 128 Kbytes at the boot end of the device. Note that in
AADM interface mode this effectively requires that one of the boot sectors is selected for any address overlay
mode because in the initial phase of AADM mode operation the host memory controller may only issue the
low order address thus limiting the early boot time address space to the 128 Kbytes at the boot end of the
device.
6.3.3
Default Access Mode
Upon power-up or hardware reset, the device defaults to the Asynchronous Access mode.
6.4
Bus Operations
Table 6.6 describes the required state of each input signal for each bus operation.
Table 6.6 Device Bus Operations
Operation
CE#
OE#
WE#
Standby (CE# deselect)
H
X
X
Hardware Reset
X
X
X
CLK
AVD#
A28-A16
A/DQ 15-A/DQ0
RESET#
X
X
X
High-Z
H
X
X
X
High-Z
L
Standby & Reset
Asynchronous Mode Operations
Asynchronous Address Latch
L
H
X
X
Addr In
Addr In
H
L
L
H
X
X
Addr In
H
L
H
X
X
X
Addr In
H
Asynchronous Read
L
L
H
X
H
X
Data Output Valid
H
Asynchronous Write Latched Data
L
H
X
H
X
Data Input Valid
H
(S29VS256R and S29VS128R)
Asynchronous Upper Address Latch
(S29XS256R and S29XS128R Only)
Asynchronous Lower Address Latch
(S29XS256R and S29XS128R Only)
Synchronous Mode Operations
Latch Starting Burst Address by CLK
- ADM mode
Latch Upper Starting Burst Address by CLK
(S29XS256R and S29XS128R Only)
Latch Lower Starting Burst Address by CLK
(S29XS256R and S29XS128R Only)
Burst Read and advance to next address (1)
L
H
H
L
Addr In
Addr In
H
L
L
H
L
X
Addr In
H
L
H
H
L
X
Addr In
H
L
L
H
H
X
Data Output Valid
H
X
X
X
X
High-Z
H
Terminate current Burst cycle
Legend:
L = Logic 0, H = Logic 1, X = can be either VIL or VIH.
X
= rising edge.
Note:
1. Data is delivered by a read operation only after the burst initial wait state count has been satisfied.
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6.5
S he e t
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I nfor m at i on )
Device ID and CFI (ID-CFI)
There are two traditional methods for systems to identify the type of Flash memory installed in the system.
One has been traditionally been called Autoselect and is now referred to as Device Identification (ID). A
command is used to enable an address space overlay where up to 16 word locations can be read to get
JEDEC manufacturer identification (ID), device ID, and some configuration and protection status information
from the Flash memory. The system can use the manufacturer and device IDs to select the appropriate driver
software to use with the Flash device. The other method is called Common Flash Interface (CFI). It also uses
a command to enable an address space overlay where an extendable table of standard information about
how the Flash memory is organized and behaves can be read. With this method the driver software does not
have to be written with the specifics of each possible memory device in mind. Instead the driver software is
written in a more general way to handle many different devices but adjusts the driver behavior based on the
information in the CFI table stored in the Flash memory. Traditionally these two address spaces have used
separate commands and were separate overlays. However, the mapping of these two address spaces are
non-overlapping and so can be combined in to a single address space and appear together in a single
overlay. Either of the traditional commands used to access (enter) the Autoselect (ID) or CFI overlay will
cause the now combined ID-CFI address map to appear.
A write at any sector address, in bank zero, having the least significant byte address value of AAh, with xx98h
or xx90h data, switches the addressed sector to an overlay of the ID-CFI address map. These are called IDCFI Enter commands and are only valid when written to the specified bank when it is in read mode. The IDCFI address map appears within, and replaces Flash Array data of, the selected sector address range. The
ID-CFI enter commands use the same address and data values used on previous generation memories to
access the JEDEC Manufacturer ID (Autoselect) and Common Flash Interface (CFI) information,
respectively. While the ID-CFI address space is overlaid, any write with xxF0h data to the device will remove
the overlay and return the selected sector to showing Flash memory array data. Thus, the ID-CFI address
space and commands are backward compatible with standard memory discovery algorithms.
Within the ID-CFI address map there are two subsections:
Table 6.7 ID-CFI Address Map Overview
Byte Address
Description
Size Allocated (Bytes)
Read/Write
(SA) + 00000h to 0001Fh
JEDEC ID
(traditional Autoselect values)
32
Read Only
(SA) + 00020h to CEh h
CFI data structure
174
Read Only
For the complete address map see Tables in Section 11.2, Device ID and Common Flash Memory Interface
Address Map on page 58.
6.5.1
JEDEC Device ID
The Joint Electron Device Engineering Council (JEDEC) standard JEP106T defines a method for reading the
manufacturer ID and device ID of a compliant memory. This information is primarily intended for programming
equipment to automatically match a device with the corresponding programming algorithm.
The JEDEC ID information is structured to work with any memory data bus width e.g. x8, x16, x32. The code
values are always byte wide but are located at bus width address boundaries such that incrementing the
device address inputs will read successive byte, word, or double word locations with the codes always
located in the least significant byte location of the data bus. Because the data bus is word wide each code
byte is located in the lower half of each word location and the high order byte is always zero.
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Sh e e t
( A d va n ce
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Common Flash Memory Interface
The Common Flash Interface (CFI) specification defines a standardized data structure that may be read from
a flash memory device, which allows vendor-specified software algorithms to be used for entire families of
devices. The data structure contains information for system configuration such as various electrical and
timing parameters, and special functions supported by the device. Software support can then be deviceindependent, JEDEC ID-independent, and forward-and-backward-compatible for the specified flash device
families.
The system can read CFI information at the addresses within the selected sector as shown in Section 11.2,
Device ID and Common Flash Memory Interface Address Map on page 58.
Like the JEDEC Device ID information, CFI information is structured to work with any memory data bus width
e.g. x8, x16, x32. The code values are always byte wide but are located at data bus width address boundaries
such that incrementing the device address reads successive byte, word, or double word locations with the
codes always located in the least significant byte location of the data bus. Because the data bus is word wide
each code byte is located in the lower half of each word location and the high order byte is always zero.
For further information, please refer to the Spansion CFI Version 1.4 (or later) Specification and the Spansion
CFI Publication 100 (see also JEDEC publications JEP137-A and JESD68.01). Please contact JEDEC
(http://www.jedec.org) for their standards and the Spansion CFI Publications may be found at the Spansion
Web site (http://www.spansion.com/Support/AppNotes/CFI_v1.4_VendorSpec_Ext_A1.pdf at the time of this
document’s publication).
6.5.3
Secured Silicon Region
The Secured Silicon region provides an extra Flash memory area that can be programmed once and
permanently protected from further changes. The Secured Silicon Region is 512 bytes in length. It consists of
256 bytes for factory data and 256 bytes for customer-secured data.
The Secured Silicon Region (SSR) is overlaid in the sector address specified by the SSR enter command.
Table 6.8 Secured Silicon Region
Byte Address Range
6.5.4
Secure Silicon Region
Size
(SA) + 0000h to 00FFh
Factory
256 Bytes
(SA) + 0100h to 01FFh
Customer
256 Bytes
Configuration Register
The Configuration Register Enter command is only valid when written to a bank that is in Read mode. The
configuration register mode address map appears within, and replaces Flash Array data of, the selected
sector address range. The meaning of the configuration register bits is defined in the configuration register
operation description. In configuration register mode, a write of 00F0h to any address will return the sector to
Read mode.
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S he e t
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Device Operations
This section describes the read and write bus operations, program, erase, simultaneous read/write,
handshaking, and reset features of the Flash devices.
The address space of the Flash Memory Array is divided into banks. There are three operation modes for
each bank:
Read Mode
Embedded Algorithm (EA) Mode
Address Space Overlay (ASO) Mode
Each bank of the device can be in any operation mode but, only one bank can be in EA or ASO mode at any
one time.
In Read Mode a Flash Memory Array bank may be read by simply selecting the memory, supplying the
address, and taking read data when it is ready. This is done by asynchronous or burst accesses from the host
system bus. The CU puts all banks in Read mode during Power-on, a Hardware Reset, after a Command
Reset, or after a bank is returned to Read mode from EA mode.
During a burst read access valid read data is indicated by the RDY signal being High. When RDY is Low burst
read data is not valid and wait states must be added. The use of the RDY signal to indicate when valid data is
transferred on the system data bus is called handshaking or flow control.
EA and ASO modes are initiated by writing specific address and data patterns into command registers (see
Table 11.1 on page 56). The command registers do not occupy any memory locations; they are loaded by
write bus cycles with the address and data information needed to execute a command. The contents of the
registers serve as input to the Control Unit (CU) and the CU dictates the function of the device. Writing
incorrect address and data values or writing them in an improper sequence may place the device in an
unknown state, in which case the system must write the reset command to return all banks to Read mode.
The Flash memory array data in a bank that is in EA mode, is stable but undefined, and effectively
unavailable for read access from the host system. While in EA mode the bank is used by the CU in the
execution of commands. Typical command operations are programming or erasing of data in the Flash array.
All other banks are available for read access while the one bank is in EA mode. This ability to read from one
bank while another bank is used in the execution of a command is called Simultaneous Read and Write
(SRW) and allows for continued operation of the system via the reading of data or code from other banks
while one bank is programming or erasing data as a relatively long time frame background task. Only a status
register read command can be used in a bank in EA mode to retrieve the EA status.
While any one of the overlay address spaces are overlaid in a bank (entered) that bank is in ASO mode and
no other bank may be in EA or ASO mode. All EA activity must be completed or suspended before entering
any ASO mode. A command for entering an EA or ASO mode while another bank is in EA or ASO mode will
be ignored.
While an ASO mode is active (entered) in a bank, a read for Flash array data to any other bank is allowed.
ASO mode selects a specific sector for the overlaid address space. Other sectors in the ASO bank still
provide Flash array data and may be read during ASO mode.
While SSR Lock, SSR, or Configuration Register is overlaid only the SSR Lock, SSR, or Configuration
Register respectively may be programmed in the overlaid sector. While any of these ASO areas are being
programmed the ASO bank switches to EA mode. The ID/CFI and factory portion of the SSR ASO is not
customer programmable. An attempt to program in these areas will fail.
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7.1
Sh e e t
( A d va n ce
In for ma t i on )
Asynchronous Read
The device defaults to reading array data asynchronously after device power-up or hardware reset. The
device is in the Asynchronous mode when Bit 15 of the Configuration register is set to '1'. To read data from
the memory array, the system must first assert CE# and AVD# to VIL with WE# at VIH and a valid address.
Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable
access time (tCE) is the delay from stable CE# to valid data at the outputs. See 10.9.2, AC Characteristics–
Asynchronous Read on page 49. Any input on CLK is ignored while in Asynchronous mode.
7.1.1
S29VS-R ADM Access
With CE# at VIL, WE# at VIH, and OE# at VIH, the system presents the address to the device and drives AVD#
to VIL. AVD# is kept at VIL for at least tAVDP ns. The address is latched on the rising edge of AVD#.
7.1.2
S29XS-R AADM Access
With CE# at VIL, WE# at VIH, and OE# at VIL, the system presents the upper address bits to DQ and drives
AVD# to VIL. The upper address bits are latched when AVD# transitions to VIH. The system then drives AVD#
to VIL again, with OE# at VIH and the lower address bits on the DQ signals. The lower address bits are
latched on the next rising edge of AVD#.
7.2
Synchronous (Burst) Read Mode and Configuration Register
The device is capable of continuous sequential burst operation and linear burst operation of a preset length.
In order to use Synchronous (Burst) Read Mode the configuration register bit 15 must be set to 0.
Prior to entering burst mode, the system should determine how many wait states are needed for the initial
word of each burst access (see table below), what mode of burst operation is desired, how the RDY signal
transitions with valid data, and output drive strength. The system would then write the configuration register
command sequence. See Configuration Register on page 26 for further details.
When the appropriate number of Wait States have occurred, data is output after the rising edge of the CLK.
Subsequent words are output tBACC after the rising edge of each successive clock cycle, which automatically
increments the internal address counter. RDY indicates the initial latency and any subsequent waits.
7.2.1
S29VS-R ADM Access
To burst read data from the memory array in ADM mode, the system must assert CE# to VIL, and provide a
valid address while driving AVD# to VIL for one cycle. OE# must remain at VIH during the one cycle that AVD#
is at VIL. The data appears on A/DQ15 -A/DQ0 when CE# remains at VIL, after OE# is driven to VIL and the
synchronous access times are satisfied. The next data in the burst sequence is read on each clock cycle that
OE# and CE# remain at VIL.
OE# does not terminate a burst access if it rises to VIH during a burst access. The outputs will go to high
impedance but the burst access will continue until terminated by CE# going to VIH, or AVD# returns to VIL
with a new address to initiate a another burst access.
7.2.2
S29XS-R AADM Access
To burst read data from the memory array in AADM mode, the system must assert CE# to VIL, OE# must be
driven to VIL with AVD# for one cycle while the upper address is valid. The rising edge of CLK when OE# and
AVD# are at VIL captures the upper 16 bits of address. The rising edge of CLK when OE# is at VIH and AVD#
is at VIL latches the lower 16 bits of address. The data appears on A/DQ15 -A/DQ0 when CE# remains at VIL,
after OE# is driven to VIL and the synchronous access times are satisfied. The next data in the burst
sequence is read on each clock cycle that OE# and CE# remain at VIL.
Once OE# returns to VIH during a burst read the OE# no longer enables the outputs until after AVD# is at VIL
with OE# at VIH - which signals that address-low has been captured for the next burst access. This is so that
OE# at VIL may be used in conjunction with AVD# at VIL to indicate address-high on the A/DQ signals without
enabling the A/DQ outputs, thus avoiding data output contention with Address-high.
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The device has a fixed internal address boundary that occurs every 256 Bytes (128 words). A boundary
crossing latency of one or two additional wait states may be required. The device also reads data in 16 byte
(8 word) aligned and length groups. When the initial address is not aligned at the beginning of a 16 byte
boundary, additional wait states may be needed when crossing the first 16 byte boundary. The number of
additional wait states depends on the clock frequency and starting address location.
The following Tables show the latency for initial and boundary crossing wait state operation (note that ws =
wait state).
Table 7.1 Initial Wait State vs. Frequency
Wait State
Frequency (Maximum MHz)
3
27
4
40
5
54
6
66
7
80
8
95
9
104
10
120
Note:
The default initial wait state delay after power on or reset is 13 wait states.
Table 7.2 Address Latency for 10 -13 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
+2 ws (1)
D8
1
D1
D2
D3
D4
D5
D6
D7
1 ws
+2 ws
D8
2
D2
D3
D4
D5
D6
D7
1 ws
1 ws
+2 ws
D8
3
D3
D4
D5
D6
D7
1 ws
1 ws
1 ws
+2 ws
D8
4
D4
D5
D6
D7
1 ws
1 ws
1 ws
1 ws
+2 ws
D8
5
D5
D6
D7
1 ws
1 ws
1 ws
1 ws
1 ws
+2 ws
D8
6
D6
D7
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
+2 ws
D8
7
D7
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
+2 ws
D8
10 -13 wait states
Note:
1. This column applies to the 256 Byte boundary only.
Table 7.3 Address Latency for 9 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
+1 ws (1)
D8
1
D1
D2
D3
D4
D5
2
D2
D3
D4
D5
D6
D6
D7
1 ws
+1 ws
D8
D7
1 ws
1 ws
+1 ws
3
D3
D4
D5
D6
D8
D7
1 ws
1 ws
1 ws
+1 ws
D8
4
D4
D5
D6
D7
1 ws
1 ws
1 ws
1 ws
+1 ws
D8
5
D5
D6
6
D6
D7
D7
1 ws
1 ws
1 ws
1 ws
1 ws
+1 ws
D8
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
+1 ws
7
D7
1 ws
1 ws
D8
1 ws
1 ws
1 ws
1 ws
1 ws
+1 ws
D8
9 wait states
Note:
1. This column applies to the 256 Byte boundary only.
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Table 7.4 Address Latency for 8 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
1
D1
D2
D3
D4
D5
D6
D7
1 ws
D8
2
D2
D3
D4
D5
D6
D7
1 ws
1 ws
D8
D3
D4
D5
D6
D7
1 ws
1 ws
1 ws
D8
3
D8
8 wait states
4
D4
D5
D6
D7
1 ws
1 ws
1 ws
1 ws
D8
5
D5
D6
D7
1 ws
1 ws
1 ws
1 ws
1 ws
D8
6
D6
D7
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
D8
7
D7
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
D8
D7
D8
D9
Table 7.5 Address Latency for 7 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
1
D1
D2
D3
D4
D5
D6
D7
D8
2
D2
D3
D4
D5
D6
D7
1 ws
D8
D9
3
D3
D4
D5
D6
D7
1 ws
1 ws
D8
D9
4
D4
D5
D6
D7
1 ws
1 ws
1 ws
D8
D9
5
D5
D6
D7
1 ws
1 ws
1 ws
1 ws
D8
D9
6
D6
D7
1 ws
1 ws
1 ws
1 ws
1 ws
D8
D9
7
D7
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
D8
D9
7 wait states
Table 7.6 Address Latency for 6 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
D8
1
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
D4
D5
D6
D7
D8
D9
D10
3
D3
D4
D5
D6
D7
1 ws
D8
D9
D10
6 wait states
4
D4
D5
D6
D7
1 ws
1 ws
D8
D9
D10
5
D5
D6
D7
1 ws
1 ws
1 ws
D8
D9
D10
6
D6
D7
1 ws
1 ws
1 ws
1 ws
D8
D9
D10
7
D7
1 ws
1 ws
1 ws
1 ws
1 ws
D8
D9
D10
Table 7.7 Address Latency for 5 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
D8
1
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
D4
D5
D6
D7
D8
D9
D10
3
D3
D4
D5
D6
D7
D8
D9
D10
D11
4
D4
D5
D6
D7
1 ws
D8
D9
D10
D11
5
D5
D6
D7
1 ws
1 ws
D8
D9
D10
D11
5 wait states
24
6
D6
D7
1 ws
1 ws
1 ws
D8
D9
D10
D11
7
D7
1 ws
1 ws
1 ws
1 ws
D8
D9
D10
D11
S29VS/XS-R MirrorBit® Flash Family
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Table 7.8 Address Latency for 4 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
1
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
D4
D5
D6
D7
D8
D9
D10
D3
D4
D5
D6
D7
D8
D9
D10
D11
4
D4
D5
D6
D7
D8
D9
D10
D11
D12
5
D5
D6
D7
1 ws
D8
D9
D10
D11
D12
3
D8
4 wait states
6
D6
D7
1 ws
1 ws
D8
D9
D10
D11
D12
7
D7
1 ws
1 ws
1 ws
D8
D9
D10
D11
D12
D8
Table 7.9 Address Latency for 3 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
1
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
D4
D5
D6
D7
D8
D9
D10
3
D3
D4
D5
D6
D7
D8
D9
D10
D11
4
D4
D5
D6
D7
D8
D9
D10
D11
D12
5
D5
D6
D7
D8
D9
D10
D11
D12
D13
6
D6
D7
1 ws
D8
D9
D10
D11
D12
D13
7
D7
1 ws
1 ws
D8
D9
D10
D11
D12
D13
3 wait states
7.2.3
Continuous Burst
The device continues to output sequential burst data from the memory array, wrapping around to address
0000000h after it reaches the highest addressable memory location, until the system drives CE# high,
RESET# low, or AVD# low in conjunction with a new address. See Table 6.6, Device Bus Operations
on page 18.
If the host system crosses a bank boundary while reading in burst mode, and the subsequent bank is not
programming or erasing, an address boundary crossing latency might be required. If the host system crosses
the bank boundary while the subsequent bank is programming or erasing, continuous burst halts (RDY will be
disabled and data will continue to be driven).
7.2.4
8-, 16-Word Linear Burst with Wrap Around
Table 7.10 Burst Address Groups
Mode
Group Size
Group Byte Address Ranges
8-word
16 bytes
0-Fh, 10-1Fh, 20-2Fh,...
16-word
32 bytes
0-1Fh, 20-3Fh, 30-4Fh,...
The remaining two modes are fixed length linear burst with wrap around, in which a fixed number of words are
read from consecutive addresses. In each of these modes, the burst addresses read are determined by the
group within which the starting address falls. The groups are sized according to the number of words read in
a single burst sequence for a given mode (see Table 7.10).
As an example: if the starting address in the 8-word mode is system byte address 3Ch, the address range to
be read would be byte address 30-3Fh, and the burst sequence would be 3C-3E-30-32-34-36-38-3Ah. The
burst sequence begins with the starting address written to the device, wraps back to the first address in the
selected group, and outputs a maximum of 8 words. No additional wait states will be required within the 8word burst. The 8th word will continue to be driven until the burst operation is aborted (CE# goes to VIH, a
new address is latched in for a new burst operation, or a hardware reset). In a similar fashion, the 16-word
Linear Wrap modes begin their burst sequence on the starting address written to the device, and then wrap
back to the first address in the selected address group. Additional wait states could be added the first time the
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device crosses from one to the other group of 8 words in a 16-word burst. The number will depend on the
starting address and the wait state set within the configuration register. See Table 7.3 on Page 21 to
Table 7.9 on page 25. Note that in these two burst read modes the address pointer does not cross the
boundary that occurs every 128 words; thus, no 128-word address boundary crossing wait states are
inserted for linear burst with wrap.
Figure 7.1 Synchronous Read
Load Initial Address
Address = RA
RA = Read Address
Wait Programmable
Wait State Setting
CR0.14 - CR0.11 sets initial access time
(from address latched to
valid data) from 3 to 13 clock cycles
Read Initial Data
RD = DQ[15:0]
RD = Read Data
Wait X Clocks (if required):
Additional Latency Due to Starting
Address and Clock Frequency
Read Next Data
RD = DQ[15:0]
No
Yes
Crossing
Boundary?
No
End of Data?
Yes
Completed
7.2.5
Configuration Register
Configuration register (CR) sets various operational parameters associated with burst mode. Upon power-up
or hardware reset, the device defaults to the idle state, and the configuration register settings are in their
default state. The host system should determine the proper settings for the configuration register, and then
execute the Set Configuration Register command sequence, before attempting burst operations. The
Configuration Register can also be read using a command sequence (see Table 11.1 on page 56). The table
below describes the register settings and indicates the default state of each bit after power-on or a hardware
reset. The configuration register bits are not affected by a command reset.
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Table 7.11 Configuration Register
CR BIt
Function
CR.15
Device Read Mode
CR.14
CR.13
CR.12
Programmable
Read Wait States
CR.11
CR.10
RDY Polarity
CR.9
Reserved
CR.8
RDY Timing
CR.7
Output Drive Strength
CR.6
Reserved
CR.5
Reserved
CR.4
Reserved
CR.3
Reserved
CR.2
CR.1
Burst Length
CR.0
7.2.5.1
Settings (Binary)
0 = Synchronous Read Mode
1 = Asynchronous Read Mode (Default)
0000 =
Reserved
0001 =
3rd
Initial data is valid on the
0010 =
4th
0011 =
5th
..
.
rising CLK edge after
addresses are latched
..
.
1011 =
13th (Default)
1100 = Reserved
1101 = Reserved
1110 = Reserved
1111 = Reserved
0 = RDY signal is active low
1 = RDY signal is active high (Default)
0 = Reserved
1 = Reserved (Default)
0 = RDY active one clock cycle before data
1 = RDY active with data (Default)
0 = Full Drive= Current Driver Strength (Default)
1 = Half Drive
0 = Reserved
1 = Reserved (Default)
0 = Reserved (Default)
1 = Reserved
0 = Reserved (Default)
1 = Reserved
0 = Reserved
1 = Reserved (Default)
000 = Continuous (Default)
010 = 8-Word (16-Byte) Linear Burst with wrap around
011 = 16-Word (32-Byte) Linear Burst with wrap around
(All other bit settings are reserved)
Device Read Mode
Configuration Register bit 15 (CR.15) controls whether read accesses via the bus interface are in
asynchronous or burst mode. Asynchronous mode is the default after power-on or hardware reset. Write
accesses are always conducted with asynchronous mode timing, independent of the read mode.
7.2.5.2
Wait States
Configuration Register bits 14 to 11 (CR.[14..11]) define the number of delay cycles after the AVD# Low cycle
that captures the initial address until the cycle that read data is valid. The bits from 14 to 11 are in most to
least significant order. The random address access at the beginning of each read burst takes longer than the
subsequent read cycles. The memory bus interface must be told how many cycles to wait before driving valid
data then advancing to the next data word. The number of initial wait cycles will vary with the memory clock
rate. The number of wait states is found in the wait state table information above. The minimum number of
wait cycles is three. The maximum is 13. The default after power-on or hardware reset is 13 cycles.
When the appropriate number of Wait States have occurred, data is output after the rising edge of the CLK.
Subsequent words are output tBACC after the rising edge of each successive clock cycle, which automatically
increments the internal address counter.
7.2.5.3
RDY Polarity
Configuration Register bit 10 (CR.10) controls whether the RDY signal indicates valid data when High or
when Low. When this bit is zero the RDY signal indicates data is valid when the signal is Low. When this bit is
one the RDY signal indicates data is valid when the signal is High. The default for this bit is set to one after
power-on or a hardware reset.
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RDY Timing
Configuration Register bit 8 (CR.8) controls whether the RDY signal indicates valid data on the same cycle
that data is valid or one cycle before data is valid. When this bit is zero the RDY signal indicates data is valid
in the same cycle the data is valid. When this bit is one the RDY signal indicates data is valid one cycle before
data is valid. The default for this bit is set to one after power-on or a hardware reset.
7.2.5.5
Output Drive Strength
Configuration Register bit 7 (CR.7) controls whether the data outputs drive with full or half strength. When this
bit is zero the data outputs drive with full strength. When this bit is one the data outputs drive with half
strength. The default for this bit is cleared to zero after power-on or a hardware reset.
7.2.5.6
Burst Length
Configuration Register bits 2 to 0 (CR.[2..0]) define the length of burst read accesses. The bits from 2 to 0 are
in most to least significant order. See the register table for code meaning & default value.
7.3
Status Register
The status of program and erase operations is provided by a status register. A status register read command
is written followed by a read of the status register for each access of the status register information. The Clear
Status Register Command will reset the status register. The status register can be read in synchronous or
asynchronous mode.
Table 7.12 Status Register Reset State
Bit 7
Device Ready
Bit.
Overall status
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Erase Suspend
Status Bit
Erase Status
Bit
Program
Status Bit
RFU
Program
Suspend
Status Bit
Sector Lock
Status Bit
Bank Status Bit
DRB
ESSB
ESB
PSB
RFU
PSSB
SLSB
BSB
1 at Reset
0 at Reset
0 at Reset
0 at Reset
0 at Reset
0 at Reset
0 at Reset
0 at Reset
Notes:
1. Status bits higher than Bit 7 are undefined.
2. Bit 7 reflects the device status.
3. If the device is busy, Bit 0 is used to check whether the addressed bank is busy or some other bank is busy.
4. All the other bits reflect the status of the device.
Table 7.13 Status Register - Bit 7
Bit 7
Device Ready
Bit.
Overall status
DRB
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Erase Suspend
Status Bit
Erase Status
Bit
Program
Status Bit
RFU
Program
Suspend
Status Bit
Sector Lock
Status Bit
Bank Status Bit
ESSB
ESB
PSB
RFU
PSSB
SLSB
BSB
Invalid
Invalid
Invalid
Invalid
Invalid
Invalid
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
0
Device busy
programming
or erasing
1
Device ready
Notes:
1. Bit 7 is set when there is no erase or program operation in progress in the device.
2. Bits 1 through 6 are valid if and only if Bit 7 is set.
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Table 7.14 Status Register - Bit 6
Bit 7
Device Ready
Bit.
Overall status
DRB
1
Bits 6:1 only
valid when Bit
7=1
1
Bit 6:1 only
valid when Bit
7=1
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Erase Suspend
Status Bit
Erase Status
Bit
Program
Status Bit
RFU
Program
Suspend
Status Bit
Sector Lock
Status Bit
Bank Status Bit
ESSB
ESB
PSB
RFU
PSSB
SLSB
BSB
X
X
X
X
X
X
X
X
X
X
X
X
0
No Erase in
Suspension
1
Erase in
Suspension
Notes:
1. Upon issuing the “Erase Suspend” Command, the user must continue to read status until DRB becomes 1 before accessing another
sector within the same bank.
2. Cleared by “Erase Resume” Command.
Table 7.15 Status Register - Bit 5
Bit 7
Device Ready
Bit.
Overall status
DRB
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Erase Suspend
Status Bit
Erase Status
Bit
Program
Status Bit
RFU
Program
Suspend
Status Bit
Sector Lock
Status Bit
Bank Status Bit
ESSB
ESB
PSB
RFU
PSSB
SLSB
BSB
X
Erase
successful
X
X
X
X
X
X
X
X
X
X
1
Bits 6:1 only
valid when Bit
7=1
0
1
Bit 6:1 only
valid when Bit
7=1
X
1
Erase error
Notes:
1. ESB bit reflects “success” or “failure” of the most recent erase operation.
2. Cleared by “Clear Status Register” Command as well as by hardware reset.
Table 7.16 Status Register - Bit 4
Bit 7
Device Ready
Bit.
Overall status
DRB
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Erase Suspend
Status Bit
Erase Status
Bit
Program
Status Bit
RFU
Program
Suspend
Status Bit
Sector Lock
Status Bit
Bank Status Bit
ESSB
ESB
PSB
RFU
PSSB
SLSB
BSB
X
X
Program
successful
X
X
X
X
X
X
X
X
X
X
1
Bits 6:1 only
valid when Bit
7=1
0
1
Bit 6:1 only
valid when Bit
7=1
1
Program fail
Notes:
1. PSB bit reflects “success” or “failure” of the most recent program operation.
2. Cleared by “Clear Status Register” Command as well as by hardware reset.
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Table 7.17 Status Register - Bit 3
Bit 7
Device Ready
Bit.
Overall status
DRB
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Erase Suspend
Status Bit
Erase Status
Bit
Program
Status Bit
RFU
Program
Suspend
Status Bit
Sector Lock
Status Bit
Bank Status Bit
ESSB
ESB
PSB
RFU
PSSB
SLSB
BSB
X
X
X
X
X
X
X
1
Bits 6:1 only
valid when Bit
7=1
Notes:
1. This Register is reserved for future use.
2. Cleared by “Clear Status Register” Command as well as by hardware reset.
Table 7.18 Status Register - Bit 2
Bit 7
Device Ready
Bit.
Overall status
DRB
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Erase Suspend
Status Bit
Erase Status
Bit
Program
Status Bit
RFU
Program
Suspend
Status Bit
Sector Lock
Status Bit
Bank Status Bit
ESSB
ESB
PSB
RFU
PSSB
SLSB
BSB
X
X
X
X
No Program in
suspension
X
X
X
X
X
X
Program in
suspension
X
X
1
Bits 6:1 only
valid when Bit
7=1
0
1
Bit 6:1 only
valid when Bit
7=1
1
Notes:
1. Upon issuing the “Program Suspend” Command, the user must continue to read status until DRB becomes 1 before accessing another
sector within the same bank.
2. Cleared by “Program Resume” Command.
Table 7.19 Status Register - Bit 1
Bit 7
Device Ready
Bit.
Overall status
DRB
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Sector Lock
Status Bit
Bank Status Bit
BSB
Erase Suspend
Status Bit
Erase Status
Bit
Program
Status Bit
RFU
Program
Suspend
Status Bit
ESSB
ESB
PSB
RFU
PSSB
SLSB
X
X
X
X
X
Sector not
locked during
operation
X
X
X
X
X
Sector locked
error
0
1
Bits 6:1 only
valid when Bit
7=1
1
Bit 6:1 only
valid when Bit
7=1
X
1
X
Notes:
1. SLSB indicates that a program or erase operation failed to program or erase because the sector was locked or the operation was
attempted on the protected Secure Silicon Region.
2. SLSB reflects the status of the most recent program or erase operation.
3. SLSB is cleared by “Clear Status Register” or by hardware reset.
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Table 7.20 Status Register - Bit 0
Bit 7
Device Ready
Bit.
Overall status
DRB
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Erase Suspend
Status Bit
Erase Status
Bit
Program
Status Bit
RFU
Program
Suspend
Status Bit
Sector Lock
Status Bit
Bank Status Bit
ESSB
ESB
PSB
RFU
PSSB
SLSB
BSB
0
0
Bits 6:1 only
valid when Bit
7=1
Program or
Erase op. in
addressed
Bank
X
X
X
X
X
X
X
X
X
X
X
X
Program or
Erase op. in
other Bank
1
0
Bit 6:1 only
valid when Bit
7=1
No active
Program or
Erase op.
0
Bits 6:1 only
valid when Bit
7=1
1
X
X
X
X
X
X
X
X
X
X
X
X
1
Bit 6:1 only
valid when Bit
7=1
1
invalid
Note:
1. BSB is used to check if a program or erase operation in progress in the current bank.
7.4
Blank Check
The Blank Check command will confirm if the selected sector is erased.
The Blank Check command does not allow for reads to the array during the Blank Check. Reads to the array
while this command is executing will return unknown data.
Blank Check is only functional in Asynchronous Read mode (Configuration Register - CR [15] = 1).
To initiate a Blank Check on Sector X, write 33h to address 555h in Sector X. while the device is in the Idle
state (not during program suspend, not during erase suspend, ...).
The Blank Check command may not be written while the device is actively programming or erasing. Blank
Check does not support simultaneous operations.
Use the Status Register read to confirm if the device is still busy and when compete if the sector is blank or
not.
Bit 5 of the Status Register will be cleared to zero if the sector is erased and set to one if not erased.
Bit 7 & Bit 0 of the Status Register will show if the device is performing a Blank Check (similar to an erase
operation).
As soon as any bit is found to not be erased, the device will halt the operation and report the results.
Once the Blank Check is completed, the device will to return to the Idle State.
7.5
Simultaneous Read/Write
The simultaneous read/write feature allows the host system to read data from one bank of memory while
programming or erasing another bank of memory. An erase operation may also be suspended to read from or
program another location within the same bank (note: programming to the sector being erased is not
allowed). Figure 10.14, Back-to-Back Read/Write Cycle Timings - ADM Interface on page 54 shows how
read and write cycles may be initiated for simultaneous operation with zero latency. Refer to the DC
Characteristics on page 45 table for read-while-program and read-while-erase current specification.
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7.6
Sh e e t
( A d va n ce
In for ma t i on )
Writing Commands/Command Sequences
The device accepts Asynchronous write bus operations. During an asynchronous write bus operation, the
system must drive CE# and WE# to VIL and OE# to VIH when providing an address and data. While an
address is valid, AVD# must be driven to VIL. Addresses are latched on the rising edge of AVD#, data is
latched on the rising edge of WE#.
All writes to the memory are single word length and follow asynchronous timing. However, it is allowed to
leave the host and memory interfaces in synchronous mode as long as the host synchronous timing for a
single word synchronous write can meet the timing requirements of the memory device write cycle. Generally
a synchronous write would include Clock toggling during the write but, it is also allowed for Clock to be at VIL
during the write.
If the device is in the Synchronous Read Mode (CR.15 = 0), the addresses are latched on the rising edge of
CLK when AVD# is at VIL, while data is latched on the rising edge of WE#. If CLK is held at VIL, addresses are
latched on the rising edge of AVD#. CLK should not be held at VIH when writing commands while the device
is in Synchronous Read Mode. See the Table 6.6, Device Bus Operations on page 18 for the signal
combinations that define each phase of a write bus operation to the device. Each write is a command or part
of a command sequence to the device. The address provided in each write operation may be a bit pattern
used to help identify the write as a command to the device. The upper portion of the address may also select
the bank or sector in which the command operation is to be performed. A Bank Address (BA) is the set of
address bits required to uniquely select a bank. Similarly, a Sector Address (SA) is the address bits required
to uniquely select a sector. The data in each write identifies the command operation to be performed or
supplies information needed to perform the operation. See Table 11.1, Command Definitions on page 56 for
a listing of the commands accepted by the device. ICC2 in DC Characteristics on page 45 represents the
active current specification for an Embedded Algorithm operation.
7.7
Program/Erase Operations
When the Embedded Program algorithm is complete, the device returns to the calling routing (Erase
Suspend, SSR Lock, Secure Silicon Region, or Idle State).
The system can determine the status of the program operation by reading the Status Register. Refer to
Status Register on page 28 for information on these status bits.
A 0 cannot be programmed back to a 1. A succeeding read shows that the data is still 0. Only erase
operations can convert a 0 to a 1
.
old data
new data
results
0011
0101
0001
Any commands written to the device during the Embedded Program Algorithm are ignored except the
Program Suspend, and Status Read command. Any commands written to the device during the Embedded
Erase Algorithm are ignored except Erase Suspend and Status Read command. Reading from a bank that
is not programming or erasing is allowed.
A hardware reset immediately terminates the program/erase operation and the program command
sequence should be reinitiated once the device has returned to the idle state, to ensure data integrity.
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Write Buffer Programming
Write Buffer Programming allows the system to write 1 to 64 bytes in one programming operation. The Write
Buffer Programming command sequence is initiated by first writing the Write Buffer Load command written at
the Sector Address + 555h in which programming occurs. Next, the system writes the number of word
locations minus 1 at the Sector Address + 2AAh. This tells the device how many write buffer addresses are
loaded with data and therefore when to expect the Program Buffer to Flash confirm command. The Sector
Address must match during the Write Buffer Load command and during the Write Word Count command and
the Sector must be unlocked or the operation will abort and return to the initiating state.
The write buffer is used to program data within a 64 byte page aligned on a 64 byte boundary. Thus, a full
page Write Buffer programming operation must be aligned on a page boundary. Programming operations of
less than a full page may start on any word boundary but may not cross a page boundary.
The system then writes the starting address/data combination. This starting address is the first address/data
pair to be programmed, and selects the write-buffer-page address. The Sector address must match the Write
Buffer Load Sector Address or the operation will abort and return to the initiating state. All subsequent
address/data pairs must be in sequential order. All write buffer addresses must be within the same page. If
the system attempts to load data outside this range, the operation aborts after the Write to Buffer command is
executed and the device will indicate a Program Fail in the Status Register at bit location 4 (PSB). A “Clear
Status Register” must be issued to clear the PSB status bit.
The counter decrements for each data load operation.
Once the specified number of write buffer locations have been loaded, the system must then write the
Program Buffer to Flash command at the Sector Address + 555h. The device then goes busy. The Embedded
Program algorithm automatically programs and verifies the data for the correct data pattern. The system is
not required to provide any controls or timings during these operations. If the incorrect number of write buffer
locations have been loaded and the Program Buffer to Flash command is issued, the Status Register will
indicate a program fail at bit location 4 (PSB). A “Clear Status Register” must be issued to clear the PSB
status bit.
The write-buffer embedded programming operation can be suspended using the Program Suspend
command. When the Embedded Program algorithm is complete, the device then returns to Erase Suspend,
SSR Lock, Secure Silicon Region, or Idle state. The system can determine the status of the program
operation by reading the Status Register. Refer to Status Register on page 28 for information on these status
bits.
The Write Buffer Programming Sequence can be Aborted in the following ways:
Load a value greater than the buffer size during the Number of Locations step.
Write an address that is outside the Page of the Starting Address during the write buffer data loading stage
of the operation.
The Write Buffer Programming Sequence can be stopped and reset by the following: Hardware Reset or
Power cycle.
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Software Functions and Sample Code
Table 7.21 Write Buffer Program
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Write Buffer Load Command
Write
Sector Address + AAAh
Sector Address + 555h
0025h
2
Write Word Count
Write
Sector Address + 555h
Sector Address + 2AA
Word Count (N–1)h
3 to 34
Load Buffer Word N
Write
Last
Write Buffer to Flash
Write
Number of words (N) loaded into the write buffer can be from 1 to 32 words.
Program Address, Word N
Sector Address + AAAh
Word N
Sector Address + 555h
0029h
Notes:
1. Base = Base Address.
2. Last = Last cycle of write buffer program operation; depending on number of words written, the total number of cycles may be from 6 to
37.
3. For maximum efficiency, it is recommended that the write buffer be loaded with the highest number of words (N words) possible.
The following is a C source code example of using the write buffer program function. Refer to the Spansion
Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Write Buffer Programming Command
*/
/* NOTES: Write buffer programming limited to 32 words. */
/*
All addresses to be written to the flash in
*/
/*
one operation must be within the same flash
*/
/*
page. A flash page begins at addresses
*/
/*
evenly divisible by 0x20.
*/
UINT16 *src = source_of_data;
/* address of source data
*/
UINT16 *dst = destination_of_data;
/* flash destination address
*/
UINT16 wc
= words_to_program -1;
/* word count (minus 1)
*/
*( (UINT16 *)sector_address + 0x555 )
= 0x0025; /* write write buffer load command */
*( (UINT16 *)sector_address + 0x2AA)
= wc;
/* write word count (minus 1)
*/
do{
*dst = *src; /* ALL dst MUST BE SAME PAGE */ /* write source data to destination */
dst++;
/* increment destination pointer
*/
src++;
/* increment source pointer
*/
wc--;
/* decrement word count
*/
}while ( wc >= 0 ); /* do it again
*/
*( (UINT16 *)sector_address + 0x555)
/* poll for completion */
34
= 0x0029;
/* write confirm command
S29VS/XS-R MirrorBit® Flash Family
*/
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7.7.2
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Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming operation or a
Write to Buffer programming operation so that data can read from any non-suspended sector. When the
Program Suspend command is written during a programming process, the device halts the programming
operation within tPSL (program suspend latency) and updates the status bits. Addresses are don't-cares when
writing the Program Suspend command.
After the programming operation has been suspended, the system can read array data from any nonsuspended sector and page. The Program Suspend command may also be issued during a programming
operation while an erase is suspended. In this case, data may be read from any addresses not in Erase
Suspend or Program Suspend.
After the Program Resume command is written, the device reverts to programming and the status bits are
updated. The system can determine the status of the program operation by reading the Status Register, just
as in the standard program operation. See Status Register on page 28 for more information.
The system must write the Program Resume command to exit the Program Suspend mode and continue the
programming operation. Further writes of the Program Resume command are ignored. Another Program
Suspend command can be written after the device has resumed programming.
Software Functions and Sample Code
Table 7.22 Program Suspend
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
Bank Address
0051h
The following is a C source code example of using the program suspend function. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program suspend command */
*( (UINT16 *)bank_addr + 0x000 ) = 0x0051;
/* write suspend command
*/
Table 7.23 Program Resume
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Sector Address + 000h
Sector Address + 000h
0050h
The following is a C source code example of using the program resume function. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program resume command */
*( (UINT16 *)sector_address + 0x000 ) = 0x0050;
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/* write resume command
*/
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7.7.3
Sh e e t
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In for ma t i on )
Sector Erase
The sector erase function erases one sector in the memory array. (See Table 11.1 on page 56) The device
does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically
programs and verifies the entire memory for an all zero data pattern prior to electrical erase. After a
successful sector erase, all locations within the erased sector contain FFFFh. The system is not required to
provide any controls or timings during these operations. Sector Erase requires 2 commands. Each of the
Sector Addresses must match, the lower addresses must be correct, and the sector must be unlocked
previously by executing the Sector Unlock command and must not be locked by the Sector Lock Range
command.
When the Embedded Erase algorithm is complete, the bank returns to idle state and addresses are no longer
latched. Note that while the Embedded Erase operation is in progress, the system can read data from the
non-erasing banks. The system can determine the status of the erase operation by reading the Status
Register. See Status Register on page 28 for information on these status bits.
Once the sector erase operation has begun, only reading from outside the erase bank, read of Status
Register, and the Erase Suspend command are valid. All other commands are ignored. However, note that a
hardware reset immediately terminates the erase operation. If that occurs, the sector erase command
sequence must be reinitiated once the device has returned to idle state, to ensure data integrity.
See Program/Erase Operations on page 32 for parameters and timing diagrams.
Software Functions and Sample Code
Table 7.24 Sector Erase
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Setup Command
Write
Sector Address + AAAh
Sector Address + 555h
0080h
2
Sector Erase Command
Write
Sector Address + 555h
Sector Address + 2AA
0030h
The following is a C source code example of using the sector erase function. Refer to the Spansion Low Level
Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory
software development guidelines.
/* Example: Sector Erase Command */
*( (UINT16 *)sector_address + 0x555 ) = 0x0080;
*( (UINT16 *)sector_address + 0x2AA)
7.7.4
= 0x0030;
/* write setup command
/* write sector erase command
*/
*/
Chip Erase
The chip erase function erases the complete memory array. (See Table 11.1 on page 56). The device does
not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs
and verifies the entire memory for an all zero data pattern prior to electrical erase. After a successful chip
erase, all locations within the device contain FFFFh. The system is not required to provide any controls or
timings during these operations. Chip Erase requires 2 commands. Each of the Sector Addresses must
match, the lower addresses must be correct, and Sector 0 must be unlocked previously by executing the
Sector Unlock command. If any sector has been locked by the Sector Lock Range command, the Chip Erase
command will not start.
When the Embedded Erase algorithm is complete, the device returns to idle state and addresses are no
longer latched. Note that while the Embedded Erase operation is in progress, the system can not read data
from the device. The system can determine the status of the erase operation by reading the Status Register.
See Status Register on page 28 for information on these status bits.
Once the chip erase operation has begun, only a Status Read, Hardware RESET or Power cycle are valid. All
other commands are ignored. However, note that a Hardware Reset or Power Cycle immediately terminates
the erase operation. If that occurs, the chip erase command sequence must be reinitiated once the device
has returned to idle state, to ensure data integrity.
See Program/Erase Operations on page 32 for parameters and timing diagrams.
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Software Functions and Sample Code
Table 7.25 Chip Erase
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Setup Command
Write
Base + AAAh
Base + 555h
0080h
2
Chip Erase Command
Write
Base + 555h
Base + 2AA
0010h
The following is a C source code example of using the chip erase function. Refer to the Spansion Low Level
Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory
software development guidelines.
/* Example: Chip Erase Command */
/* Note: Cannot be suspended
7.7.5
*/
*( (UINT16 *)base_addr + 0x555 ) = 0x0080;
/* write setup command
*/
*( (UINT16 *)base_addr + 0x2AA ) = 0x0010;
/* write chip erase command
*/
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, the device. This command is valid only during the sector erase operation. The
Erase Suspend command is ignored if written during the chip erase operation.
When the Erase Suspend command is written during the sector erase operation, the device requires a
maximum of tESL (erase suspend latency) to suspend the erase operation and update the status bits.
After the erase operation has been suspended, the bank enters the erase-suspend mode. The system can
read data from or program data to the device. Reading at any address within erase-suspended sectors
produces undetermined data. The system can read the Status Register to determine if a sector is actively
erasing or is erase-suspended. Refer to Status Register on page 28 for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend mode. The
system can determine the status of the program operation by reading the Status Register, just as in the
standard program operation.
To resume the sector erase operation, the system must write the Erase Resume command. The device will
revert to erasing and the status bits will be updated. Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after the chip has resumed erasing.
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Software Functions and Sample Code
Table 7.26 Erase Suspend
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
Bank Address
00B0h
The following is a C source code example of using the erase suspend function. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Erase suspend command */
*( (UINT16 *)bank_addr + 0x000 ) = 0x00B0;
/* write suspend command
*/
Table 7.27 Erase Resume
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Sector Address + 000h
Sector Address + 000h
0030h
The following is a C source code example of using the erase resume function. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Erase resume command */
*( (UINT16 *)sector_address + 0x000 ) = 0x0030;
/* write resume command
*/
/* The flash needs adequate time in the resume state */
7.7.6
Accelerated Program/Sector Erase
Accelerated write buffer programming, and sector erase operations are enabled through the VPP function.
This method is faster than the standard chip program and sector erase command sequences.
The accelerated write buffer program and sector erase functions must not be used more than 50
times per sector. In addition, accelerated write buffer program and sector erase should be performed at
room temperature (30°C ±10°C).
If the system asserts VHH on VPP, the device automatically uses the higher voltage on the input to reduce the
time required for program and erase operations. Removing VHH from the VPP input, upon completion of the
embedded program or erase operation, returns the device to normal operation.
Simultaneous operations are not supported while VPP is at VHH. The VPP pin must not be at VHH for
operations other than accelerated write buffer programming, accelerated sector erase, and status register
read or device damage may result.
The VPP pin must not be left floating or unconnected; inconsistent behavior of the device may result.
There is a minimum of 100 ms required between accelerated write buffer programming and a subsequent
accelerated sector erase.
7.8
Handshaking
The handshaking feature allows the host system to detect when data is ready to be read by simply monitoring
the RDY (Ready) pin, which is a dedicated output controlled by CE#.
When CE# input is Low, the RDY output signal is actively driven. When both of the CE# inputs are High the
RDY output is high-impedance. When CE# input and OE# input is Low, the A/DQ15-A/DQ0 output signals are
actively driven. When both of the CE# inputs are High, or the OE# input is High, the A/DQ15-A/DQ0 outputs
are high-impedance.
When the device is operated in synchronous mode, and OE# is low (active), the initial word of burst data
becomes available after the rising edge of the RDY. CR.8 in the Configuration Register allows the host to
specify whether RDY is active at the same time that data is ready, or one cycle before data is ready (see
Table 7.11 on page 27).
When the device is operated in asynchronous mode, RDY will be high when CE# is low (active).
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Hardware Reset
The RESET# input provides a hardware method of resetting the device to idle state. When RESET# is driven
low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all
outputs, resets the configuration register, and ignores all read/write commands for the duration of the reset
operation. The device also resets the internal state machine to idle state. Hardware Reset clears the AADM
upper address register to zero.
To ensure data integrity the operation that was interrupted should be reinitiated once the device is ready to
accept another command sequence.
When RESET# is held at VSS, the device draws CMOS standby current (ICC4). If RESET# is held at VIL, but
not at VSS, the standby current is greater.
See Figure 10.10 for timing diagrams
7.10
Software Reset
Software reset is part of the command set (see Table 11.1 on page 56) that also returns the device to idle
state and must be used for the following conditions:
1. Exit ID/CFI mode
2. Exit Secure Silicon Region mode
3. Exit Configuration Register mode
4. Exit SSR Lock mode
Reset commands are ignored once programming/erasure has begun until the operation is complete.
Software Functions and Sample Code
Table 7.28 Reset
Cycle
Operation
Byte Address
Word Address
Data
Reset Command
Write
Base + xxxh
Base + xxxh
00F0h
Note:
Base = Base Address.
The following is a C source code example of using the reset function. Refer to the Spansion Low Level Driver
User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software
development guidelines.
/* Example: Reset (software reset of Flash state machine) */
*( (UINT16 *)base_addr + 0x000 ) = 0x00F0;
8. Sector Protection/Unprotection
The Sector Protection/Unprotection feature disables or enables programming or erase operations in one or
multiple sectors and can be implemented through software and/or hardware methods, which are independent
of each other. This section describes the various methods of protecting data stored in the memory array.
8.1
Sector Lock/Unlock Command
The Sector Lock/Unlock command sequence allows the system to protect all sectors from accidental writes
or, unprotect one sector to allow programming or erasing of the sector. When the device is first powered up,
all sectors are unlocked. To lock all sectors (enter protected mode), a Sector Lock/Unlock command must be
issued to any Sector Address. Once this command is issued, only one sector at a time can be unlocked until
power is cycled. To unlock a sector, the system must write the Sector Lock/Unlock command sequence. Two
cycles are first written: addresses are x555h and x2AAh, and data is 60h. During the third cycle, the sector
address (SLA) and unlock command (60h) are written, while specifying with address A6 whether that sector
should be locked (A6 = VIL) or unlocked (A6 = VIH).
A Program or Erase operation will check the unlocked Sector Address only at the beginning of the Program or
Erase operation. It is not necessary to keep the sector being Programmed or Erased unlocked during the
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operation. The system can change the unlocked Sector after programming or erasing the sector has begun.
An Erase Resume or Program Resume command does not check the value of the unlocked Sector.
If A6 is set to VIL,then all sectors in the array will be locked. Only one sector at a time can be unlocked.
If a Sector Lock/Unlock command is issued to a sector that is protected by the Sector Lock Range command,
all sectors in the part will be locked.
8.2
Sector Lock Range Command
This command allows a range of sectors to be protected from program or erase (locked) until a hardware
reset or power is removed from the device. Once this command is issued, all sectors are protected and the
Sector Lock/Unlock command is ignored for the selected range of sectors. Sectors outside of the selected
range must be unlocked one sector at a time using the Sector Unlock command in order to be erased/
programmed.
Two cycles are first written: addresses are x555h and x2AAh, and data is 60h. During the third cycle, the
sector address (SLA) and load sector address command (61h) is written. This cycle sets the lower sector
address of the range. During the fourth cycle, the sector address (SLA) and load sector address command
(61h) is written. This cycle sets the upper sector address of the range. The addresses reference a large
sector address range (128 KB). If a sector address matches the location of the four small sectors, all of the
small sectors will be protected as a group. The sectors selected by the lower and upper address, as well as
all sectors between these sectors, are protected from program and erase until a hardware reset or power is
removed. If the lower and upper sector addresses are for the same sector then only that one sector is locked.
Flash address input A6 (system byte address bit a7) during both address cycles must be zero (A6 = VIL) for
the addresses to be accepted as valid.
If the first sector address cycle contains an address which is higher than the second sector address cycle,
then the command sequence will be invalid. If A6 is set to one (A6 = VIH) on either address cycle, the
command sequence will disable subsequent Sector Lock Range commands.
A valid Sector Lock Range command sequence is accepted only once after a Hardware Reset or initial power
up. Additional Sector Lock Range commands will be ignored.
If a Sector Unlock command tries to unlock a Sector within the Sector Lock Range, the Sector will remain in
locked state. Similarly, if a Sector that is currently unlocked by the Sector Unlock command is overlapped by
a subsequent Sector Lock Range, that sector will be locked and program erase operations to that region will
be ignored.
This command is generally used by trusted boot code. After power on reset boot code has the option to check
for any need to update sectors before locking them for the remainder of power on time. Once boot code is
satisfied with the content of sectors to be protected the Sector Lock Range command is used to lock sectors
against any program or erase during normal system operation. This adds an extra layer of protection for
critical data that must be protected against accidental or malicious corruption. Yet, maintains flexibility for
trusted boot code to perform occasional updates of the data. It is important to issue the Sector Lock Range
command even if no sectors are to be protected so that sectors that should remain available for update
cannot be later locked by accidental or malicious code behavior.
8.3
Hardware Data Protection Methods
There are additional hardware methods by which intended or accidental erasure of any sectors can be
prevented via hardware means. The following subsections describes these methods:
8.3.1
VPP Method
Once VPP input is set to VIL, all program and erase functions are disabled and hence all Sectors (including the
Secure Silicon Region) are protected.
8.3.2
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down.
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The command register and all internal program/erase circuits are disabled. Subsequent writes are ignored
until VCC is greater than VLKO. The system must provide the proper signals to the control inputs to prevent
unintentional writes when VCC is greater than VLKO.
8.3.3
Write Pulse Glitch Protection
Noise pulses of less than 3 ns (typical) on OE#, WE#, or CE# do not initiate a write cycle.
8.3.4
Power-Up Write Inhibit
If CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept write commands. The
internal state machine is automatically reset to the idle state on power-up.
8.4
SSR Lock
The SSR Lock consists of two bits. The Customer Secure Silicon Region Protection Bit is bit 0. The Factory
Secure Silicon Region Protection Bit is bit 1. All other bits in this register return “1.” If the Customer Secure
Silicon Region Protection Bit is set to “0,” the Customer Secure Silicon Region is protected and can not be
programmed. If this bit is set to “1,” the Customer Secure Silicon Region is available for programming. Once
this area has been programmed, the SSR Lock bit 0 should be programmed to “0.”
8.5
Secure Silicon Region
The Secure Silicon Region provides an extra Flash memory region that may be programmed once and
permanently protected from further programming or erase.
Reads can be performed in the Asynchronous or Synchronous mode.
Sector address supplied during the Secure Silicon Entry command selects the Flash memory array sector
that is overlaid by the Secure Silicon Region address map.
Continuous burst mode reads within Secure Silicon Region wrap from address FFh back to address 00h.
Reads outside of the overlaid sector return memory array data.
The Secure Silicon Region is not accessible when the device is executing an Embedded Algorithm (nor
during Program Suspend, Erase Suspend, or while another AOS is active).
See the Secure Silicon address map for address range of this area.
8.5.1
Factory Secure Silicon Region
The Factory Secure Silicon Region is always protected when shipped from the factory and has the Factory
SSR Lock Bit (bit 1) permanently set to a zero. This prevents cloning of a factory locked part and ensures the
security of the ESN and customer code once the product is shipped to the field.
8.5.2
Customer Secure Silicon Region
The Customer Secure Silicon Region is typically shipped unprotected, Customer SSR Lock Bit (bit 0) set to a
one, allowing customers to utilize that sector in any manner they choose.
The Customer Secure Silicon Region can be read any number of times, but each word CL can be
programmed only once and the region locked only once. The Customer Secure Silicon Region lock must
be used with caution as once locked, there is no procedure available for unlocking the Customer Secure
Silicon Region area and none of the bits in the Customer Secure Silicon Region memory space can be
modified in any way. The Customer Indicator Bit is located in the SSR Lock at bit location 0.
Once the Customer Secure Silicon Region area is protected, any further attempts to program in the area
will fail with status indicating the area being programmed is protected.
July 30, 2012 S29VS_XS-R_00_08
S29VS/XS-R MirrorBit® Flash Family
41
Da t a
8.5.3
Sh e e t
( A d va n ce
In for ma t i on )
Secure Silicon Region Entry and Exit Command Sequences
The system can access the Secure Silicon Region region by issuing the one-cycle Enter Secure Silicon
Region Entry command sequence from the IDLE State. The device continues to have access to the Secure
Silicon Region region until the system issues the Exit Secure Silicon Region command sequence, performs a
Hardware RESET, or until power is removed from the device.
See Command Definition Table [Secure Silicon Region Command Table, Appendix
Table 11.1 on page 56 for address and data requirements for both command sequences.
The Secure Silicon Region Entry Command allows the following commands to be executed
Read customer and factory Secure Silicon Regions
Program the customer Secure Silicon Region
Read data out of all sectors not re-mapped to Secure Silicon Region
Secure Silicon Region Exit
Software Functions and Sample Code
The following are C functions and source code examples of using the Secured Silicon Sector Entry, Program,
and exit commands. Refer to the Spansion Low Level Driver User’s Guide (available soon on
www.spansion.com) for general information on Spansion Flash memory software development guidelines.
Table 8.1 Secured Silicon Region Entry
Cycle
Operation
Byte Address
Word Address
Data
Entry Cycle
Write
Sector Address + AAAh
Sector Address + 555h
0088h
/* Example: SecSi Sector Entry Command */
*( (UINT16 *)sector_address + 0x555 ) = 0x0088;
/* write Secsi Sector Entry Cmd
*/
Table 8.2 Secured Silicon Region Program
Cycle
Operation
Byte Address
Word Address
Data
Program Setup
Write
Sector Address + AAAh
Sector Address + 555h
0025h
Write Word Count
Write
Sector Address + 555h
Sector Address + 2AA
Word Count (N–1)h
Number of words (N) loaded into the write buffer can be from 1 to 32 words.
Load Buffer Word N
Write
Write Buffer to Flash
Write
Program Address, Word N
Sector Address + AAAh
Word N
Sector Address + 555h
0029h
/* Once in the SecSi Sector mode, you program */
/* words using the programming algorithm.
*/
Table 8.3 Secured Silicon Region Exit
Cycle
Operation
Byte Address
Word Address
Data
Exit Cycle
Write
Base Address
Base Address
00F0h
/* Example: SecSi Sector Exit Command */
*( (UINT16 *)base_addr + 0x000 ) = 0x00F0;
42
/* write SecSi Sector Exit cycle */
S29VS/XS-R MirrorBit® Flash Family
S29VS_XS-R_00_08 July 30, 2012
Dat a
9.
9.1
S he e t
( Ad van ce
I nfor m at i on )
Power Conservation Modes
Standby Mode
In the standby mode current consumption is greatly reduced, and the outputs (A/DQ15-A/DQ0) are placed in
the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when
the CE# and RESET# inputs are both held at VCC ± 0.2 V. The device requires standard access time (tCE or
tIA) for read access, before it is ready to read data. If the device is deselected during erasure or programming,
the device draws active current until the operation is completed. ICC3 in DC Characteristics on page 45
represents the standby current specification
9.2
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption while in asynchronous mode and
while the device is not in a suspended state. The device automatically enables this mode when addresses
remain stable for tACC + 20 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control
signals. Standard address access timings (tACC or tPACC) provide new data when addresses are changed.
While in sleep mode, output data is latched and always available to the system. While in synchronous mode,
the automatic sleep mode is disabled. ICC6 in DC Characteristics on page 45 represents the automatic sleep
mode current specification.
9.3
Output Disable (OE#)
When the OE# input is at VIH, output (A/DQ15-A/DQ0) from the device is disabled and placed in the high
impedance state. RDY is not controlled by OE#.
July 30, 2012 S29VS_XS-R_00_08
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43
Da t a
Sh e e t
( A d va n ce
In for ma t i on )
10. Electrical Specifications
10.1
Absolute Maximum Ratings
Storage Temperature Plastic Packages
–65°C to +150°C
Ambient Temperature with Power Applied
–65°C to +125°C
Voltage with Respect to Ground: All Inputs and I/Os except as noted
below (Note 1)
–0.5 V to VIO + 0.5 V
VCC (Note 1)
–0.5 V to +2.5 V
VIO
–0.5 V to +2.5 V
VPP (Note 2)
–0.5 V to +9.5 V
Output Short Circuit Current (Note 3)
100 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may undershoot VSS to –2.0 V for periods of up
to 20 ns. See Figure 10.1. Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage transitions outputs may overshoot to VCC
+ 2.0 V for periods up to 20 ns. See Figure 10.2.
2. Minimum DC input voltage on pin VPP is -0.5V. During voltage transitions, VPP may overshoot VSS to –2.0 V for periods of up to 20 ns.
See Figure 10.1. Maximum DC voltage on pin VPP is +9.5 V, which may overshoot to 10.5 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not
implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
Figure 10.1 Maximum Negative Overshoot Waveform
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
20 ns
Figure 10.2 Maximum Positive Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
1.0 V
10.2
20 ns
20 ns
Operating Ranges
Wireless (W) Devices
Ambient Temperature (TA)
–25°C to +85°C
Industrial (I) Devices
Ambient Temperature (TA)
(Refer to Publication Number S29VS_XS-R_SP for Industrial
Temperature specific differences)
–40°C to +85°C
Supply Voltages
VCC Supply Voltages
+1.70 V to +1.95 V
+1.70 V to +1.95 V
VIO Supply Voltages
VCC(min) VIO(min) - 200mV
Note:
Operating ranges define those limits between which the functionality of the device is guaranteed.
44
S29VS/XS-R MirrorBit® Flash Family
S29VS_XS-R_00_08 July 30, 2012
Dat a
10.3
S he e t
( Ad van ce
I nfor m at i on )
DC Characteristics
10.3.1
CMOS Compatible
Parameter
Max
Unit
ILI
Input Load Current
Description
VIN = VSS to VCC, VCC = VCCmax
Test Conditions (Notes 1 & 2)
Min
±1
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCCmax
±1
µA
35
38
mA
39
44
mA
28
30
mA
32
36
mA
28
30
mA
32
36
mA
83 MHz
CE# = VIL, OE# = VIH,
WE# = VIH, burst length = 8
104 MHz
108 MHz
83 MHz
ICCB
VCC Active burst Read Current
CE# = VIL, OE# = VIH,
WE# = VIH, burst length = 16
104 MHz
108 MHz
CE# = VIL, OE# = VIH,
WE# = VIH,
burst length = Continuous
83 MHz
104 MHz
108 MHz
Typ
IIO1
VIO Non-active Output
OE# = VIH, RDY = Tri-State
20
30
µA
IIO2
VIO Standby
CE# = RESET# = VCC ± 0.2V
2
3
µA
ICC1
VCC Active Asynchronous
Read Current
CE# = VIL, OE# = VIH,
WE# = VIH
ICC2
VCC Active Write Current
(3) (7)
CE# = VIL, OE# = VIH,
VPP = VIH
ICC3
VCC Standby Current
CE# = RESET# = VCC ± 0.2 V
ICC4
VCC Reset Current
RESET# = VIL, CLK = VIL
10 MHz
40
60
mA
5 MHz
20
40
mA
1 MHz
10
20
mA
VPP
1
5
µA
VCC
30
40
mA
VPP
1
5
µA
VCC
83 MHz
VCC Active Current
(Read While Write)
(Continuous Burst) (6)
CE# = VIL, OE# = VIH, VPP = VIH 104 MHz
ICC6
VCC Sleep Current (4)
CE# = VIL, OE# = VIH
IPP
Accelerated Program Current
(5)
CE# = VIL, OE# = VIH,
VPP = 9.5 V
ICC5
30
40
µA
150
250
µA
65
70
71
76
20
40
mA
108 MHz
µA
VPP
7
10
mA
VCC
25
28
mA
V
VIL
Input Low Voltage
VIO = 1.8 V
–0.2
0.4
VIH
Input High Voltage
VIO = 1.8 V
VIO – 0.4
VIO + 0.4
VOL
Output Low Voltage
IOL = 100 µA, VCC = VCC min = VIO
VOH
Output High Voltage
IOH = –100 µA, VCC = VCC min = VIO
VHH
Voltage for Accelerated
Program
8.5
9.5
V
VLKO
Low VCC Lock-out Voltage
1.0
1.1
V
0.1
VIO – 0.1
V
V
Notes:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. VCC= VIO
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Device enters automatic sleep mode when addresses are stable for tACC + 20 ns. Typical sleep mode current is equal to ICC3.
5. Total current during accelerated programming is the sum of VPP and VCC currents.
6. ICC5 applies while reading the status register during program and erase operations.
7. Effect of status register polling during write not included.
July 30, 2012 S29VS_XS-R_00_08
S29VS/XS-R MirrorBit® Flash Family
45
Da t a
10.4
Sh e e t
( A d va n ce
In for ma t i on )
Capacitance
Symbol
Description
CIN
Input Capacitance
(Address, CE#, OE#, WE#,
AVD#, WE#, CLK, RESET#)
VIN = 0
COUT
Output Capacitance
(DQ, RDY)
VOUT = 0
Min.
Typ.
Max.
Unit
Single Die
2.0
4.5
6.0
pF
Dual Die
4.0
9.0
12.0
pF
Test Condition
Single Die
2.0
4.5
6.0
pF
Dual Die
4.0
9.0
12.0
pF
Notes:
1. Test conditions TA = 25°C, f = 1.0 MHz
2. Sampled, not 100% tested.
10.5
AC Test Conditions
Operating Range
Input level
0.0 to VIO
Input comparison level
VIO/2
Output data comparison level
VIO/2
Load capacitance (CL)
30 pF
Transition time (tT) (input rise and fall times)
Transition time (tT) (CLK input rise and fall times)
83 MHz
2.50 ns
104 MHz
1.85 ns
108 MHz
1.85 ns
83 MHz
2.50 ns
104 MHz
1.85 ns
108 MHz
1.85 ns
Figure 10.3 Input Pulse and Test Point
VIO
VIO /2
Input and Output
Test Point
VIO /2
0V
Figure 10.4 Output Load
Device
Under
Test
*CL = 30 pF including scope
and Jig capacitance
10.6
Key to Switching Waveforms
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
46
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High-Z)
S29VS/XS-R MirrorBit® Flash Family
S29VS_XS-R_00_08 July 30, 2012
Dat a
10.7
S he e t
( Ad van ce
I nfor m at i on )
VCC Power Up
Table 10.1 VCC Power-up
Parameter
Description
Test Setup
Speed
tVCS
VCC Setup Time
Min
300
Unit
µs
tVIOS
VIO Setup Time
Min
300
µs
tRH
Time between RESET# (high) and CE# (low)
Min
200
ns
Notes:
1. RESET# must be high after VCC and VIO are higher than VCC minimum.
2. VCC VIO – 200 mV during power-up.
3. VCC & VIO ramp rate could be non-linear
4. VCC and VIO are recommended to be ramped up simultaneously.
Figure 10.5 VCC Power-up Diagram
.
tVCS
VCC min
VCC
tVIOS
VIO min
VIO
VIH
RESET#
tRH
CE#
10.8
CLK Characterization
Parameter
fCLK
Description
108 MHz
Max
108
Min
DC (1)
CLK Frequency
Unit
MHz
tCLK
CLK Period
Min
9.26
ns
tCL/tCH
CLK Low/High Time
Min
0.40 tCLK
ns
Note:
1. DC for operations other than continuous and 16 word (32 byte) synchronous burst read. See AC Characteristics Table.
Figure 10.6 CLK Characterization
tCLK
tCH
tCL
CLK
July 30, 2012 S29VS_XS-R_00_08
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47
Da t a
10.9
Sh e e t
( A d va n ce
In for ma t i on )
AC Characteristics
10.9.1
AC Characteristics–Synchronous Burst Read
Parameter (Notes)
Symbol
83 MHz
104 MHz
108 MHz
DC (0) for operations other than continuous and
32 byte synchronous burst.
Unit
KHz
Clock Frequency
CLK
Min
Clock Cycle
tCLK
Min
12
9.6
9.26
ns
CLK Rise Time
tCLKR
Max
2.5
1.92
1.852
ns
CLK Fall Time
tCLKF
tCLKH/L
Min
5
tIA
Max
tBACC
Max
AVD# Setup Time to CLK
tAVDS
Min
AVD# Hold Time from CLK
tAVDH
Min
Address Setup Time to CLK
tACS
Min
Address Hold Time from CLK
tACH
Min
Data Hold Time from Next Clock Cycle
tBDH
Min
CLK High or Low Time
Internal Access Time
Burst Access Time Valid Clock to Output
Delay
120 in 32 Byte burst
1000 in continuous burst
4
3.86
ns
72.34
ns
6.75
ns
4
3.38
ns
3
2.89
ns
4
2.89
ns
75
9
7.6
5
3
2
4.82
ns
2
ns
Output Enable to Data
tOE
Max
15
ns
CE# Disable to Output High-Z (2)
tCEZ
Max
10
ns
OE# Disable to Output High-Z (2)
tOEZ
Max
CE# Setup Time to CLK
tCES
Min
CLK to RDY valid
tRACC
Max
tCR
Max
10
ns
tAVDP
Min
6
ns
CE# low to RDY valid
AVD# Pulse Width
10
ns
4
9
7.6
3.38
ns
6.75
ns
Notes:
1. Not 100% tested.
2. If OE# is disabled before CE# is disabled, the output goes to High-Z by tOEZ.
If CE# is disabled before OE# is disabled, the output goes to High-Z by tCEZ.
If CE# and OE# are disabled at the same time, the output goes to High-Z by tOEZ.
3. AVD can not be low for 2 subsequent CLK cycles.
Figure 10.7 Synchronous Read Mode - ADM Interface
tCES
7 cycles for initial access is shown as an illustration.
CE#
1
2
3
4
5
6
7
CLK
tAVDS
AVD#
tAVDP
tAVDH
tACS
Amax–
A16
AC
A/DQ15–
A/DQ0
AC
tACH
DD
tIA
tCR
48
DE
DB
tBDH
OE#
RDY
tBACC
DC
tOE
tRACC
Hi-Z
S29VS/XS-R MirrorBit® Flash Family
S29VS_XS-R_00_08 July 30, 2012
Dat a
10.9.2
S he e t
( Ad van ce
I nfor m at i on )
AC Characteristics–Asynchronous Read
Symbol
Min
Max
Access Time from CE# Low
Parameter
tCE
–
80
Asynchronous Access Time from address valid
tACC
–
80
Read Cycle Time
tRC
80
–
AVD# Low Time
tAVDP
6
–
Address Setup to rising edge of AVD#
tAAVDS
4
–
Address Hold from rising edge of AVD#
tAAVDH
3.5
–
Output Enable to Output Valid
tOE
–
15
CE# Setup to AVD# falling edge
tCAS
0
–
CE# Disable to Output & RDY High-Z (1)
tCEZ
–
10
OE# Disable to Output High-Z (1)
tOEZ
–
10
AVD# High to OE# Low
tAVDO
4
–
tCR
–
10
WE# Disable to AVD# Enable
tWEA
9.6
–
WE# Disable to OE# Enable
tOEH
4
–
CE# low to RDY valid
Unit
ns
Notes:
1. Not 100% tested.
2. If OE# is disabled before CE# is disabled, the output goes to High-Z by tOEZ.
If CE# is disabled before OE# is disabled, the output goes to High-Z by tCEZ.
If CE# and OE# are disabled at the same time, the output goes to High-Z by tOEZ.
Figure 10.8 Asynchronous Mode Read - ADM Interface
CE#
tOE
OE#
tOEH
WE#
tCE
A/DQ15–
A/DQ0
tOEZ
RA
Valid RD
tACC
RA
Amax–A16
tAAVDH
AVD#
tCAS
tAVDP
tAAVDS
tCR
RDY
tCEZ
Hi-Z
Hi-Z
Notes:
1. AVD# Transition occurs after CE# is driven to Low and Valid Address Transition occurs before AVD# is driven to Low.
2. VA = Valid Read Address, RD = Read Data.
July 30, 2012 S29VS_XS-R_00_08
S29VS/XS-R MirrorBit® Flash Family
49
Da t a
10.9.3
Sh e e t
( A d va n ce
In for ma t i on )
AC Characteristics–Erase/Program Timing
Parameter
Symbol
Min
Typ
Max
tWC
60
–
–
ns
AVD# low pulse width
tAVDP
6
–
–
ns
Address Setup to rising edge of AVD#
tAAVDS
4
–
–
ns
Address Hold from rising edge of AVD#
tAAVDH
3.5
–
–
ns
Read Recovery Time Before Write
tGHWL
0
–
–
ns
Data Setup to rising edge of WE#
tDS
20
–
–
ns
Data Hold from rising edge of WE#
tDH
0
–
–
ns
CE# Setup to falling edge of WE#
tCS
4
–
–
ns
CE# Hold from rising edge of WE#
tCH
0
–
–
ns
WE# Pulse Width
tWP
25
–
–
ns
WE# Pulse Width High
tWPH
20
–
–
ns
WE# Cycle Time (1)
Unit
Latency Between Read and Write Operations
tSRW
0
–
–
ns
AVD# Disable to WE# Disable
tVLWH
23.5
–
–
ns
WE# Disable to AVD# Enable
tWEA
9.6
–
–
ns
tCR
–
–
10
ns
CE# Disable to Output High-Z
tCEZ
–
–
10
ns
OE# Disable to WE# Enable
tWEH
4
–
–
ns
Erase Suspend Latency
tESL
–
–
30
µs
Program Suspend Latency
tPSL
–
–
30
µs
Erase Resume to Erase Suspend
tERS
30
–
–
µs
Program Resume to Program Suspend
tPRS
30
–
–
µs
CE# low to RDY valid
Note:
1. Sampled, not 100% tested.
Figure 10.9 Asynchronous Program Operation Timings - ADM Interface
Program Command Sequence (last two cycles)
VIH
Read Status Data
CLK
VIL
tVLWH
tAVDP
AVD#
tAAVDH
tAAVDS
Amax–
A16
A/DQ15–
A/DQ0
BA(555h)
SA(555h)
PA
PA
PD
SA(555h)
BA(555h)
29h
BA
70h
BA
Status
tDS
tDH
tCAS
CE#
tCH
OE#
tWP
WE#
tCS
tWPH
tWC
tVCS + tRH
VCC
50
S29VS/XS-R MirrorBit® Flash Family
S29VS_XS-R_00_08 July 30, 2012
Dat a
10.9.4
S he e t
( Ad van ce
I nfor m at i on )
Hardware Reset (Reset#)
Table 10.2 Warm-Reset
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tRP
RESET# Pulse
Width
Min
50
ns
tRH
Reset High Time
Before Read
Min
200
ns
tRPH
RESET# Low to CE#
Low
Min
10
us
Figure 10.10 Reset Timings
CE#, OE#
tRH
RESET#
tRP
tRPH
Figure 10.11 Latency with Boundary Crossing
Address boundary occurs every 128 words, beginning at address
00007Fh: (0000FFh, 00017Fh, etc.) Address 000000h is also a boundary crossing.
Address
(hex)
CLK
AVD#
7C
7D
7E
7F
7F
80
83
tRACC
tRACC
latency
tRACC
RDY
(Note 2)
OE#,
CE#
82
(stays high)
RDY
(Note 1)
Data
81
tRACC
latency
D124
D125
D126
D127
D128
D129
D130
(stays low)
Notes:
1. RDY active with data (CR.8 = 1 in the Configuration Register).
2. RDY active one clock cycle before data (CR.8 = 0 in the Configuration Register).
3. Figure shows the device not crossing a bank in the process of performing an erase or program.
July 30, 2012 S29VS_XS-R_00_08
S29VS/XS-R MirrorBit® Flash Family
51
Da t a
Sh e e t
( A d va n ce
In for ma t i on )
Figure 10.12 Latency with Boundary Crossing into Bank Performing Embedded Operation
Address boundary occurs every 128 words, beginning at address
00007Fh: (0000FFh, 00017Fh, etc.) Address 000000h is also a boundary crossing.
Address
(hex)
CLK
AVD#
7C
7D
7E
7F
7F
80
D127
00h
81
82
83
(stays high)
tRACC
RDY
(Note 1)
tRACC
RDY
(Note 2)
Data
OE#,
CE#
D124
D125
D126
00h
00h
00h
(stays low)
Notes:
1. RDY active with data (CR.8 = 1 in the Configuration Register).
2. RDY active one clock cycle before data (CR.8 = 0 in the Configuration Register).
3. Figure shows the device crossing a bank in the process of performing an erase or program.
52
S29VS/XS-R MirrorBit® Flash Family
S29VS_XS-R_00_08 July 30, 2012
Dat a
10.9.5
S he e t
( Ad van ce
I nfor m at i on )
Wait State Configuration Register Setup
Figure 10.13 Example of Programmable Wait States
Data
D0
D1
Rising edge of next
clock cycle following
last wait state triggers
next burst data
AVD#
Total number of clock cycles
following addresses being latched
OE#
1
2
3
4
6
5
7
CLK
1
0
2
4
3
5
6
7
Total number of clock edges following addresses being latched
Configuration
Register
Programmable Wait States
0000 =
Reserved
0001 =
3rd
0010 =
4th
0011 =
5th
CR.13
0100 =
6th
CR.12
0101 =
CR.14
CR.11
0110 =
7th
initial data is valid on the
8th
0111 =
9th
1000 =
10th
.
.
.
.
.
.
1011 =
13th
rising CLK edge after addresses are latched
1100 =
Reserved
1111 =
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Figure 10.14 Back-to-Back Read/Write Cycle Timings - ADM Interface
Last Cycle in
Program or
Sector Erase
Command Sequence
Read status (at least two cycles) in same bank
and/or array data from other bank
tWC
tRC
Begin another
write or program
command sequence
tRC
tWC
CE#
OE#
tOE
tOEH
tGHWL
WE#
tWPH
tWP
tACC
tDS
tOEZ
tDH
Data
RD
WD
25h
RD
tSR/W
Addresses
WA
RA
RA
SA(555h)
tAAVDS
AVD#
tAAVDH
Note:
Breakpoints in waveforms indicate that system may alternately read array data from the non-busy bank while checking the status of the
program or erase operation in the busy bank. The system should read status twice to ensure valid information.
54
S29VS/XS-R MirrorBit® Flash Family
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10.9.6
S he e t
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I nfor m at i on )
Erase and Programming Performance
Parameter
Typ (Note 1)
Max (Note 2)
128 Kbyte
VCC
0.8/1.3
3.5/5.5
Sector Erase Time
32 Kbyte
VCC
0.35/0.6
2.0/3.5
(Note 6)
128 Kbyte
VPP
0.8/1.3
3.5/5.5
32 Kbyte
VPP
0.35/0.6
2.0/3.5
78/126 (128 Mbit)
200/325 (128 Mbit)
155/251 (256 Mbit)
400/650 (256 Mbit)
78/126 (128 Mbit)
154/250 (128 Mbit)
155/251 (256 Mbit)
308/500 (256 Mbit)
VCC
170
800
VCC
14.1
94
VPP
9
48
VCC
450
3000
VPP
288
1540
118 (128 Mbit)
157 (128 Mbit)
236 (256 Mbit)
315 (256 Mbit)
76 (128 Mbit)
80 (128 Mbit)
151 (256 Mbit)
160 (256 Mbit)
VCC
Unit
Comments
s
(Note 3)
µs
Excludes system level
overhead (Note 4)
s
Excludes system level
overhead (Note 4)
Chip Erase Time (Note 6), (Note 7)
VPP
Single Word Program Time (using
Program Buffer)
Effective Word Programming Time using
Program Write Buffer
Total 32-Word Buffer Programming Time
VCC
Chip Programming Time
(using 32 word buffer)
VPP
Erase Suspend/Erase Resume (tESL)
30
µs
Program Suspend/Program Resume
(tPSL)
30
µs
Blank Check
1
ms
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 1.8 V VCC, 10,000 cycles. Additionally, programming typically
assumes a checkerboard pattern.
2. Under worst case conditions of –25°C, VCC = 1.70 V, 100,000 cycles.
3. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
4. System-level overhead is the time required to execute the bus-cycle sequence for the program command. See Table 11.1 on page 56 for
further information on command definitions.
5. The device has a minimum erase and program cycle endurance of 10,000 cycles.
6. The first value excludes pre-programming time, while the second value is inclusive of pre-programming time for the FFFFh pattern, with
status polling rate as 400 ns.
7. The erase time is calculated from the time of issuing erase command to the completion of erase operation (indicated by status register)
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11. Appendix
This section contains information relating to software control or interfacing with the Flash device.
11.1
Command Definitions
All values are in hexadecimal. The S29VS-R family of devices are 16-bit word address oriented. Most system
address buses, regardless of data bus size, are byte oriented. It is common practice for system designers to
shift the address busses. That is, Flash Address A0 is connected to system Address A1, etc. To
accommodate the system designers, addresses are listed in both word address and byte address where
applicable. The flash address (word) is listed above the system address (byte).
Command Sequence
Cycles
Table 11.1 Command Definitions (Sheet 1 of 2)
Bus Cycles (Notes 1–4)
First
Second
Addr
Data
RA
RD
1
X
F0
3-34
(SA) 555
(SA) AAA
25
Buffer to Flash
1
(SA) 555
(SA) AAA
29
Chip Erase
2
(SA) 555
(SA) AAA
Sector Erase
2
Read Status Register
Third
Addr
Data
(SA) 2AA
(SA) 554
WC
80
(SA) 2AA
(SA) 554
10
(SA) 555
(SA) AAA
80
(SA) 2AA
(SA) 554
30
2
(SA) 555
(SA) AAA
70
(SA)
RR
Clear Status Register
1
(SA) 555
(SA) AAA
71
Program Suspend (5)
1
XXX
51
Program Resume (5)
1
(SA) 000
50
Erase Suspend (6)
1
XXX
B0
Erase Resume (6)
1
(SA) 000
30
Read
Reset
Write Buffer Load (8)
(SA) 555
Addr
(SA) PA
(11)
Fourth
Data
Addr
Data
PD
PA (12)
PD
SLA
61
Blank Check (13)
1
Sector Lock/Unlock
3
555
AAA
60
2AA
554
60
SLA
60
Sector Lock Range
4
555
AAA
60
2AA
554
60
SLA
61
(SA) X00
PD
(SA) AAA
33
ID/CFI
ID/CFI Command Definitions
(SA) X55
ID/CFI Entry (7) (10)
1
ID/CFI Read
1
(SA) RA
data
ID/CFI Exit
1
XXX
FO
(SA) XAA
90 or 98
Configuration Register
Configuration Command Definitions
56
(SA) 555
Configuration Register
Entry (7) (10)
1
Write Buffer Load
3
Buffer to Flash
(Configuration Register)
1
Configuration Register
Read
1
(SA) X00
RR
Configuration Register Exit
1
XXX
FO
(SA) AAA
(SA) 555
(SA) AAA
(SA) 555
(SA) AAA
D0
25
(SA) 2AA
(SA) 554
0
29
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Command Sequence
Cycles
Table 11.1 Command Definitions (Sheet 2 of 2)
Bus Cycles (Notes 1–4)
First
Addr
Second
Data
Addr
Third
Data
Fourth
Addr
Data
(SA) 00
PD
(SA) PA
PD
Addr
Data
(SA) PA
PD
SSR Lock
SSR Lock Command Definitions
(SA) 555
SSR Lock Entry
(7) (10)
1
Write Buffer Load (8)
3
Buffer to Flash
1
SSR Lock Read
1
(SA) XXX
SSR Lock Exit
1
XXX
(SA) AAA
(SA) 555
(SA) AAA
(SA) 555
(SA) AAA
40
25
(SA) 2AA
(SA) 554
0
29
RR
F0
Secure Silicon Region
Secure Silicon Region Command Definitions
Secure Silicon Region Entry
(7) (10)
Write Buffer Load (8)
1
3-34
(SA) 555
(SA) AAA
(SA) 555
(SA) AAA
(SA) 555
88
25
Buffer to Flash
1
Secure Silicon Region Read
1
(SA) RA
RD
Secure Silicon Region Exit
1
XXX
F0
(SA) AAA
(SA) 2AA
(SA) 554
WC
29
Legend:
X = Don’t care
RA = Address of the location to be read.
RD = Read Data from location RA during read operation.
RR = Read Register value
PA = Address of the memory location to be programmed.
PD = Data to be programmed at location PA.
BA = Address bits sufficient to select a bank
SA = Address bits sufficient to select a sector
SLA = Sector Lock Address
WBL = Write Buffer Location. Address must be within the same write buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes:
1. See Section 7., Device Operations on page 21 for description of bus operations.
2. Except for the following, all bus cycles are write cycle: read cycle during Read, ID/CFI Read (Manufacturing ID, Device ID, Indicator Bits), Configuration Register
read, Secure Silicon Region Read, SSR Lock Read, and 2nd cycle of Status Register Read.
3. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD, PD, and WD.
4. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. The system must write the reset
command to return the device to reading array data.
5. The Program Resume command is valid only during the Program Suspend mode/state.
6. The Erase Resume command is valid only during the Erase Suspend mode/state.
7. Command is valid when all banks are ready to read array data.
8. The total number of cycles in the command sequence is determined by the number of words written to the write buffer.
9. VPP must be at VHH during the entire operation of this command.
10. Entry commands are needed to enter a specific mode to enable instructions only available within that mode.
11. Must be the lowest word address of the words being programmed within the 32 word write buffer page. This is not necessarily the lowest address of the page.
Data words are loaded into the write page buffer in sequential order from lowest to highest address.
12. Subsequent addresses must fall within the same Sector and Page as the initial starting address.
13. Blank Check is only functional in Asynchronous Read mode (Configuration Register - CR [15] = 1).
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Device ID and Common Flash Memory Interface Address Map
The Device ID fields occupy the first 32 bytes of address space followed by the Common Flash Interface data
structure. The Common Flash Interface (CFI) specification defines a standardized data structure containing
device specific parameter, structure, and feature set information, which allows vendor-specified software
algorithms to be used for entire families of devices. Software support can then be device-independent,
JEDEC ID-independent, and forward- and back-ward-compatible for the specified flash device families. Flash
driver software can be standardized for long-term compatibility.
This device enters the ID/CFI mode when the system writes the ID/CFI Query command, 90h or 98h, to
address (SA)55h any time all banks are in read mode (the CU is in Idle State). The system can then read ID
and CFI information at the addresses, within the selected sector, given in the following tables. To terminate
reading ID/CFI, the system must write the reset command.
Table 11.2 ID/CFI Data (Sheet 1 of 5)
Device Identification
DATA
Word Offset Address
Byte Offset Address
VS256R/XS256R
(SA) + 00h
(SA) + 00h
VS128R/XS128R
(SA) + 01h
(SA) + 02h
(SA) + 02h
(SA) + 04h
Reserved
(SA) + 03h
(SA) + 06h
Reserved
Reserved
(SA) + 04h
(SA) + 08h
Reserved
Reserved
(SA) + 05h
(SA) + 0Ah
Reserved
Reserved
(SA) + 06h
(SA) + 0Ch
0010h
ID Version
0001h
007Eh
(Top/Bottom)
Description
Spansion Manufacturer ID
007Eh
(Top/Bottom)
DQ15 - DQ8 = Reserved
DQ7 - Factory Lock Bit: 1 = Locked;
0 = Not Locked
DQ6 - Customer Lock Bit: 1 = Locked;
0 = Not locked
DQ5 - DQ0 = Reserved
Device ID, Word 1 Extended ID address code. Indicates
an extended two byte device ID is located at byte address
1Ch and 1Eh.
Reserved
(SA) + 07h
(SA) + 0Eh
(SA) + 08h
(SA) + 10h
Reserved
(SA) + 09h
(SA) + 12h
Reserved
Reserved
(SA) + 0Ah
(SA) + 14h
Reserved
Reserved
(SA) + 0Bh
(SA) + 16h
Reserved
Reserved
Indicator Bits
Reserved
05h
Bit 0 - Status Register Support
1 = Status Register Supported
0 = Status register not Supported
(SA) + 0Ch
(SA) + 18h
Bit 1 - DQ Polling Support
1 = DQ bits polling supported
0 = DQ bits polling not supported
Lower Software Bits
Bit 3-2 - Command Set Support
11 = Reserved
10 = Reserved
01 = Reduced Command Set
00 = Old Command Set
Bit 4- F - Reserved
58
Reserved
Upper Software Bits
Reserved
(SA) + 0Dh
(SA) + 1Ah
(SA) + 0Eh
(SA) + 1Ch
0064h/Top;
0066h/Bottom
0063h/Top;
0065h/Bottom
High Order Device ID, Word 2
(SA) + 0Fh
(SA) + 1Eh
0001h
(Top/Bottom)
0001h
(Top/Bottom)
Low Order Device ID, Word 3
S29VS/XS-R MirrorBit® Flash Family
S29VS_XS-R_00_08 July 30, 2012
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Table 11.2 ID/CFI Data (Sheet 2 of 5)
DATA
Word Offset Address
Byte Offset Address
VS256R/XS256R
VS128R/XS128R
Description
CFI Query Identification String
(SA) + 10h
(SA) + 20h
0051h
(SA) + 11h
(SA) + 22h
0052h
(SA) + 12h
(SA) + 24h
0059h
(SA) + 13h
(SA) + 26h
0002h
(SA) + 14h
(SA) + 28h
0000h
(SA) + 15h
(SA) + 2Ah
0040h
(SA) + 16h
(SA) + 2Ch
0000h
(SA) + 17h
(SA) + 2Eh
0000h
(SA) + 18h
(SA) + 30h
0000h
(SA) + 19h
(SA) + 32h
0000h
(SA) + 1Ah
(SA) + 34h
0000h
Query Unique ASCII string “QRY”
CFI
Primary Algorithm Command Set (Spansion = 0002h)
Address for Primary Extended Table
Alternate Algorithm Command Set (00h = none exists)
Address for Secondary Algorithm extended Query Table
(00h = none exists)
Common Flash Interface
System Interface String
VCC Logic Supply Minimum Program/Erase
or Write voltage
(SA) + 1Bh
(SA) + 36h
0017h
(SA) + 1Ch
(SA) + 38h
0019h
(SA) + 1Dh
(SA) + 3Ah
0085h
VPP [Programming] Supply Minimum Program/Erase
voltage (00h = no VPP pin present)
(SA) + 1Eh
(SA) + 3Ch
0095h
VPP [Programming] Supply Maximum Program/Erase
voltage (00h = no VPP pin present)
(SA) + 1Fh
(SA) + 3Eh
0008h
Typical Word Programming Time per single word 2N s
(e.g. < or = 32 s)
(SA) + 20h
(SA) + 40h
0009h
Typical Program Time for programming the complete
buffer 2N s (e.g. < or = 256 s) (00h = not supported)
(SA) + 21h
(SA) + 42h
000Ah
Typical Time for Sector Erase 2N ms
(SA) + 22h
(SA) + 44h
(SA) + 23h
(SA) + 46h
0003h
Max. Program Time per single word
[2N times typical value]
(SA) + 24h
(SA) + 48h
0003h
Max. Program Time using buffer [2N times typical value]
(SA) + 25h
(SA) + 4Ah
0003h
Max. Time for sector erase [2N times typical value]
(SA) + 26h
(SA) + 4Ch
0003h
Max. Time for full chip erase [2N times typical value]
(00h = not supported)
July 30, 2012 S29VS_XS-R_00_08
0012h
D7-D4: Volt
D3-D0: 100 millivolt
VCC Logic Supply Maximum Program/Erase
or Write voltage
D7-D4: Volt
D3-D0: 100 millivolt
0011h
S29VS/XS-R MirrorBit® Flash Family
Typical Time for full chip erase 2N s
(00h = not supported)
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Table 11.2 ID/CFI Data (Sheet 3 of 5)
DATA
Word Offset Address
Byte Offset Address
VS256R/XS256R
VS128R/XS128R
Description
Device Geometry Definition
(SA) + 27h
(SA) + 4Eh
0019h
0018h
Device Size = 2N byte
Common Flash Interface
Flash Device Interface
0h = x8
1h = x16
2h = x8/x16
3h = x32 [lower byte]
(SA) + 28h
(SA) + 50h
0001h
(SA) + 29h
(SA) + 52h
0000h
[upper byte] (00h = not supported)
(SA) + 2Ah
(SA) + 54h
0006h
Max. number of bytes in multi-byte buffer write = 2N
[lower byte]
(SA) + 2Bh
(SA) + 56h
0000h
[upper byte] (00h = not supported)
(SA) + 2Ch
(SA) + 58h
0002h
Number of Erase Block Regions within device
(Number of regions within the device containing one or
more contiguous Erase Blocks of the same size)
(SA) + 2Dh
(SA) + 2Eh
00FEh
007Eh
(Top Boot)
(Top Boot)
(SA) + 5Ah
0003h
0003h
(Bottom Boot)
(Bottom Boot)
(SA) + 5Ch
0000h
[upper byte]
0000h (Top Boot)
(SA) + 2Fh
Erase Block Region 1 information
[lower byte] - Number of Erase sectors of identical size
within the Erase Block Region.
00h = 1 sector;
01h = 2 sectors
02h = 3 sectors
03h = 4 sectors
(SA) + 5Eh
0080h (Bottom Boot)
[lower byte] - Sector Size in bytes divided by 256
(n [bytes]h = sector size / 256)
0002h (Top Boot)
(SA) + 30h
(SA) + 60h
[upper byte]
0000h (Bottom Boot)
(SA) + 31h
0003h
0003h
(Top Boot)
(Top Boot)
00FEh
007Eh
(SA) + 62h
Erase block Region 2 Information
(Bottom Boot)
(SA) + 32h
(SA) + 64h
(Bottom Boot)
0000h
0080h (Top Boot)
(SA) + 33h
(SA) + 66h
0000h (Bottom Boot)
[upper byte]
[lower byte] - Sector Size in bytes divided by 256
(n [bytes]h = sector size / 256)
0000h (Top Boot)
(SA) + 34h
(SA) + 68h
[upper byte]
0002h (Bottom Boot)
60
S29VS/XS-R MirrorBit® Flash Family
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Table 11.2 ID/CFI Data (Sheet 4 of 5)
DATA
Word Offset Address
Byte Offset Address
VS256R/XS256R
VS128R/XS128R
Description
Primary Algorithm-Specific Extended Query
(SA) + 40h
(SA) + 80h
0050h
(SA) + 41h
(SA) + 82h
0052h
(SA) + 42h
(SA) + 84h
0049h
(SA) + 43h
(SA) + 86h
0031h
(SA) + 44h
(SA) + 88h
0034h
Minor CFI version number, ASCII
Address Sensitive Unlock (Bits 1-0):
00b = Required
01b = Not required
Process Technology (Bits 5-2)
0011b = 130 nm Floating-Gate Technology
0100b = 110 nm MirrorBit Technology
0101b = 90 nm Floating-Gate Technology
0110b = 90 nm MirrorBit Technology
1000b = 65 nm MirrorBit Technology
(SA) + 45h
(SA) + 8Ah
0020h
(SA) + 46h
(SA) + 8Ch
0002h
(SA) + 47h
(SA) + 8Eh
0001h
(SA) + 48h
(SA) + 90h
0000h
Query Unique ASCII string “PRI”
Major CFI version number, ASCII
Erase Suspend
0= Not supported
1 = To Read Only
2 = To Read & Write
Common Flash Interface
Sector Protection per Group
0 = not Supported
X = number of sectors in per group
Sector Temporary Unprotect
00h = Not Supported
01h = Supported
(SA) + 49h
(SA) + 92h
(SA) + 4Ah
(SA) + 94h
(SA) + 4Bh
(SA) + 96h
(SA) + 4Ch
(SA) + 98h
Sector Protect/Unprotect scheme
08h = Advanced Sector Protection
09h = Single-Sector Lock + Sector Lock Range
0009h
00E0h
0070h
0001h
0000h
Simultaneous Operations
Number of Sectors in all banks except Boot Bank
Burst Mode Type
00h = Not Supported
01h = Supported
Page Mode Type
00h = Not Supported
01h = 4-Word Page
02h = 8-Word Page
04h = 16-Word Page
(SA) + 4Dh
(SA) + 9Ah
0085h
VPP (Acceleration) Supply Minimum
00h = Not Supported
D7-D4: Volt
D3-D0: 100 millivolt
(SA) + 4Eh
(SA) + 9Ch
0095h
VPP (Acceleration) Supply Maximum
00h = Not Supported
D7-D4: Volt
D3-D0: 100 millivolt
Top/Bottom Sector Flag
(SA) + 4Fh
(SA) + 9Eh
(SA) + 50h
(SA) + A0h
03h (Top Boot)
02h (Bottom Boot)
00h = Uniform
01h = Dual Boot
02h = Bottom boot
03h = Top boot
Program Suspend
July 30, 2012 S29VS_XS-R_00_08
0001h
S29VS/XS-R MirrorBit® Flash Family
00h = Not Supported
01h= Supported
61
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Table 11.2 ID/CFI Data (Sheet 5 of 5)
DATA
Word Offset Address
Byte Offset Address
VS256R/XS256R
VS128R/XS128R
Description
Common Flash Interface
Unlock Bypass
(SA) + 51h
(SA) + A2h
0000h
(SA) + 52h
(SA) + A4h
0008h
Secure Silicon Region (Customer SSR Area) Size 2N
bytes
(SA) + 53h
(SA) + A6h
000Eh
Hardware Reset Low Time-out until reset is completed
during an embedded algorithm - Maximum 2N ns
(e.g. 10 s => n = E)
(SA) + 54h
(SA) + A8h
000Eh
Hardware Reset Low Time-out until reset is completed not
during an embedded algorithm - Maximum 2N ns
(e.g. 10 s => n = E)
(SA) + 55h
(SA) + AAh
0005h
Erase Suspend Time-out Maximum 2N µs
(SA) + 56h
(SA) + ACh
0005h
Program Suspend Time-out Maximum 2N µs
(SA) + 57h
(SA) + AEh
0008h
Bank Organization: X= Number of banks
Common Flash Interface
(SA) + 58h
0020h
0010h
(Top Boot)
(Top Boot)
0023h
0013h
(Bottom Boot)
(Bottom Boot)
(SA) + B0h
Bank 0 Region Information.
X= Number of sectors in bank
(SA) + 59h
(SA) + B2h
0020h
0010h
Bank 1 Region Information.
X= Number of sectors in bank
(SA) + 5Ah
(SA) + B4h
0020h
0010h
Bank 2 Region Information.
X= Number of sectors in bank
(SA) + 5Bh
(SA) + B6h
0020h
0010h
Bank 3 Region Information.
X= Number of sectors in bank
(SA) + 5Ch
(SA) + B8h
0020h
0010h
Bank 4 Region Information.
X= Number of sectors in bank
(SA) + 5Dh
(SA) + BAh
0020h
0010h
Bank 5 Region Information.
X= Number of sectors in bank
(SA) + 5Eh
(SA) + BCh
0020h
0010h
Bank 6 Region Information.
X= Number of sectors in bank
(SA) + 5Fh
62
00h = Not Supported
01h = Supported
0020h
0010h
(Bottom Boot)
(Bottom Boot)
0023h
0013h
(Top Boot)
(Top Boot)
(SA) + BEh
S29VS/XS-R MirrorBit® Flash Family
Bank 7 Region Information.
X= Number of sectors in bank
S29VS_XS-R_00_08 July 30, 2012
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Figure 11.1 Asynchronous Read - AADM Interface
CLK may be at VIL or VIH or Active
CLK
CE#
tAVDP
tAVDP
tCAS
tAVDP
OE# low with AVD# low signals the presence of Address-High.
The Address-High cycle is optional. When the high part of address does
not change only the Address-Low cycle is needed.
AVD#
tAAVDS
tAAVDS
tAAVDH
tAAVDH
OE# enables data output only after the Address-Low cycle in which AVD# is Low and OE# is High
OE# is ignored after OE# returns high between accesses until the next Address-Low is received
OE#
WE#
tACC
tAAVDS
tAAVDH
tCE
tAAVDS
tOE
tAAVDH
A/DQ15A/DQ0
tCEZ
tOEZ
tACC
Add-Hi
Add-Low
Data
tCR
tCR
RDY
Figure 11.2 Asynchronous Read Followed By Read - AADM Interface
CLK may be at VIL or VIH or Active
CLK
CE#
tCAS
tAVDP
AVD#
tAVDO
tAAVDS
tAAVDH
tAVDO
OE#
tWEA
tOEH
WE#
tACC
tACC
tOE
tACC
tCE
tAAVDS
A/DQ15A/DQ0
tACC
tOE
tOEZ
tAAVDH
AH
AL
D
tAAVDS
tAAVDH
AH
AL
tCR
tCEZ
tOEZ
D
tCEZ
RDY
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Figure 11.3 Asynchronous Read Followed By Write - AADM Interface
CLK may be at VIL or VIH or Active
CLK
CE#
tCAS
tAVDP
AVD#
tAVDO
tAAVDS
tAAVDH
tAAVDS
tAAVDH
OE#
tCS
tWEA
tOEH
tVLWH
tWP
tWPH
tCH
tWC
WE#
tACC
tCE
tACC
tAAVDS
tAAVDH
A/DQ15A/DQ0
AH
tOE
tDH
tOEZ
AL
D
tDS
AH
AL
tCEZ
D
tCR
tCEZ
RDY
Figure 11.4 Asynchronous Write - AADM Interface
CLK may be at VIL or VIH or Active
CLK
CE#
OE# low with AVD# low signals the presence of Address-High. The Address-High cycle is optional.
When the high part of address does not change only the Address-Low cycle is needed.
OE# enables data output only after the Address-Low cycle in which AVD# is Low and OE# is High.
OE# is ignored after OE# returns high between accesses until the next Address-Low is received.
tCAS
tAVDP
tAVDP
tAVDP
AVD#
tAAVDH
tAAVDS
OE#
tWEA
tCS
tWPH
tVLWH
tWP
tWC
tCH
WE#
tAAVDH
A/DQ15A/DQ0
tAAVDS
Add-High
tAAVDS
tAAVDH
Add-Low
tCR
tDS
tDH
Data
tCEZ
RDY
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Figure 11.5 Asynchronous Write Followed By Read - AADM Interface
CLK may be at VIL or VIH or Active
CLK
CE#
tCAS
tAVDP
AVD#
tAAVDS
tAAVDH
tAVDO
OE#
tWEA
tCS
tWPH
tVLWH
tWP
tOEH
tWC
tCH
WE#
tACC
A/DQ15A/DQ0
tAAVDS
tAAVDH
AH
tOE
tDS
AL
tDH
tOEZ
tCEZ
tACC
D
AH
AL
D
tCR
tCEZ
RDY
Figure 11.6 Asynchronous Write Followed By Write - AADM Interface
CLK may be at VIL or VIH or Active
CLK
CE#
tCAS
tAVDP
AVD#
tAAVDS
tAAVDH
tAAVDS
tAAVDH
OE#
tWEA
tCH
tVLWH
tVLWH
tWP
tCS
tWPH
tWP
tWC
WE#
tAAVDS
tAAVDH
A/DQ15A/DQ0
tAAVDS
AH
tDS
tDH
tAAVDH
AL
tDH
D
tDS
AH
tCR
AL
D
tCEZ
RDY
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Figure 11.7 Synchronous Read Wrapped Burst Address Low Only - AADM Interface
tIA
CLK
tCES
CE#
OE# low with AVD# low signals the presence of Address-High.
The Address-High cycle is optional. When the high part of address does
not change only the Address-Low cycle is needed.
tAVDS
tAVDP
tAVDH
Address-Low only cycle
AVD#
tAVDS
OE# enables data output only after the Address-Low cycle in which AVD# is Low and OE# is High.
OE# is ignored after OE# returns high between accesses until the next Address-Low is received.
tAVDH
OE#
WE#
tBACC
tBDH
tACS
tACH
A/DQ15 - A/DQ0
AH
tBDH
tOEZ
tOEZ
tOE
tOE
AL
tBACC
AL
tRACC
tCR
tRACC
tRACC
tRACC
tCEZ
RDY(with data)
tRACC
tRACC
tRACC
RDY(before data)
Figure 11.8 Synchronous Read Continuous Burst - AADM Interface
tIA
tIA
CLK
In continuous burst, wait states equal to the internal access
time are inserted between the end of one cache line and the
start of the next cache line
tCES
CE#
tAVDS
tAVDH
tAVDP
AVD#
tAVDS
tAVDH
OE#
WE#
tBACC
tACS
tACH
tBACC
tBDH
tOE
tOEZ
A/DQ15-A/DQ0
tRACC
tCR
tRACC
tRACC
tCEZ
RDY(with data)
tRACC
tRACC
tRACC
RDY(before data)
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Figure 11.9 Synchronous Read Wrapped Burst - AADM Interface
tIA
CLK
15 initial access cycles setting shown.
tIA measured from CLK rising edge during AVD# Low
to CLK rising edge at beginning of first data out.
tCES
CE#
tAVDS
OE# low with AVD# low signals the presence of Address-High.
The Address-High cycle is optional. When the high part of address does
not change only the Address-Low cycle is needed.
tAVDP
tAVDH
AVD#
tAVDS
OE# enables data output only after the Address-Low cycle in which AVD# is Low and OE# is High.
OE# is ignored after OE# returns high between accesses until the next Address-Low is received.
tAVDH
OE#
WE#
tBACC
tBDH
tACS
tACH
A/DQ15-A/DQ0
AH
tOEZ
tOE
AL
tRACC
tCR
tRACC
tCEZ
RDY(with data)
tRACC
tCEZ
RDY(before data)
Figure 11.10 Synchronous Read Followed By Read Burst - AADM Interface
tIA
tIA
CLK
tCES
CE#
tAVDS
tAVDP
tAVDH
AVD#
tAVDS
tAVDH
OE#
WE#
tBACC
tBDH
tACS
tACH
A/DQ15 - A/DQ0
AH
tOEZ
ASIC_tCO
tOE
tOE
AL
tRACC
tCR
AH
tRACC
tRACC
tOEZ
tBACC
AL
tRACC
tCEZ
RDY(with data)
tRACC
tRACC
tRACC
RDY(before data)
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Figure 11.11 Synchronous Read Followed By Write - AADM Interface
tIA
CLK
tCES
CE#
tAVDP
tAVDH
tAVDS
tAVDP
AVD#
OE#
tOEH
tWPH
tVLWH
tWC
tWEA
tWP
tCH
WE#
tBACC
tBDH
tACS
tDH
A/DQ15-A/DQ0
tACH
AH
tOE
tBACC
tDS
tOEZ
AL
AH
tRACC
tCR
tRACC
tRACC
AL
Write Data
tRACC
tCEZ
RDY(with data)
tRACC
tRACC
tRACC
RDY(before data)
Figure 11.12 Synchronous Write Followed By Read Burst - AADM Interface
tIA
CLK
CE#
tCAS
tAVDH
tAVDS
tAVDP
tCES
AVD#
OE#
tVLWH
tWPH
tWEA
tWP#
tWC
WE#
A/DQ15-A/DQ0
tOEH
Address-High
Cycles Optional
Address-High
Cycles Optional
tBACC
tBDH
tAAVDH
tAAVDS
AH
AL
tDH
tDS
Write Data
tOEZ
tOE
AH
tBACC
AL
tCR
tRACC
tRACC
tCR
tRACC
tRACC
tRACC
tCEZ
RDY(with data)
RDY(before data)
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Figure 11.13 Synchronous Write Followed By Write - AADM Interface
CLK
CE#
tCAS
tAVDP
AVD#
tAAVDS
tAAVDH
tAAVDS
tAAVDH
OE#
tWEA
tWPH
tVLWH
tWP
tCS
tVLWH
tWC
tWC
tWP
tCH
WE#
A/DQ15A/DQ0
tAAVDS
tAAVDH
AH
AL
tCR
tDH
tAAVDS
tAAVDH
AH
AL
tDS
Write Data
tRACC
tRACC
tDS
Write Data
tRACC
tDH
tCEZ
RDY
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12. Revision History
Section
Description
Revision 01 (May 15, 2008)
Initial release
Revision 02 (August 1, 2008)
DC Characteristics
Changed some values in the CMOS Compatible table
Device ID and Common Flash Memory
Interface Address Map
Changed some values in the ID/CFI Data table
Memory Address Map
Added memory address map
Revision 03 (September 12, 2008)
Physical Dimensions/Connection
Diagrams
Updated ball positions
Revision 04 (March 10, 2009)
Blank Check Command
Functional in Asynchronous Read Mode only
DC Characteristics
Changed some ICCB values
Global
Added 108 MHz; removed 66 MHz
Revision 05 (May 26, 2010)
Global
Modified document title
Features
Clarified some points
Ordering Information and Valid
Combinations
Added Industrial Temperature range option
Address/Data Interface
Corrected typo
Device Bus Operations Table
Corrected A/DQ15-A/DQ0 column information for Asynchronous Read
Asynchronous Read
Clarified asynchronous read operation.
S29XS-R AADM Access
Clarified asynchronous AADM read access.
S29VS-R ADM Access
Standardized logic Low and High descriptions to VIL and VIH. Clarified wait states required by initial
access and internal boundary crossings.
S29XS-R AADM Access
Standardized logic Low and High descriptions to VIL and VIH. Clarified wait states required by initial
access and internal boundary crossings.
Writing Commands/Command
Sequences
Clarified device behavior.
Program/Erase Operations
Removed redundant information.
Sector Lock Range Command
Clarified Sector Lock Range behavior
Figure Synchronous Read Mode
Added “ADM Interface” label
Figure Asynchronous Mode Read
Added “ADM Interface” label
Figure Asynchronous Program
Operation Timings
Added “ADM Interface” label
Figure Back-to-Back Read/Write Cycle
Timings
Added “ADM Interface” label
Figure Latency with Boundary Crossing
Corrected CR8 setting in Notes 1 and 2
Figure Latency with Boundary Crossing
into Bank Performing Embedded
Operation
Corrected CR8 setting in Notes 1 and 2
Figures Asynchronous Read - AADM
Interface to Asynchronous Write
Followed By Write - AADM Interface
Clarified CLK waveform behavior
Figure Synchronous Write Followed By
Read Burst - AADM Interface
Corrected Figure title
ADM Interface (S29VS256R and
S29VS128R)
Clarified traditional interface
Table Wait State vs. Frequency
Modified title and added note
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Section
Table Address Latency for 10 -13 Wait
States
Description
Added note
Table Address Latency for 9 Wait States Added note
Figure Synchronous Read
Removed note 1
CLK Characterization
Removed note 2
Erase and Programming Performance
Corrected note 2
Revision 06 (July 22, 2010)
DC Characteristics
Changed ICC Read test conditions to OE#=H with relevant values
Performance Characteristics
Updated tables
Erase and Programming Performance
Changed typical programming times
Revision 07 (November 18, 2010)
Erase and Programming Performance
ID/CFI Data
Changed maximum chip erase times
Corrected Data and Description for Word Offset 03h, 55h, 56h
Corrected Data for Word Offset 1Dh, 1Eh, 52h
Revision 08 (July 30, 2012)
Command Definitions
July 30, 2012 S29VS_XS-R_00_08
Corrected number of cycles for Write Buffer Load
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Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright © 2008-2012 Spansion Inc. All rights reserved. Spansion®, the Spansion logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™ and
combinations thereof, are trademarks and registered trademarks of Spansion LLC in the United States and other countries. Other names used
are for informational purposes only and may be trademarks of their respective owners.
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