S80KS5123GABHA020

S80KS5123 512 Mb: HYPERRAM™ self-ref re sh dynamic RAM ( DRAM ) w it h O cta l xSPI i nter face 1.8 V Features • Interface - xSPI (octal) Interface - 1.8 V Interface support • Single ended clock (CK) - 11 bus signals • Optional Differential clock (CK, CK#) - 12 bus signals - Chip Select (CS#) - 8-bit data bus (DQ[7:0]) - Hardware reset (RESET#) - Bidirectional read-write data strobe (RWDS) • Output at the start of all transactions to indicate refresh latency • Output during read transactions as read data strobe • Input during write transactions as write data mask • Performance, power, and packages - 200-MHz maximum clock rate - DDR - transfers data on both edges of the clock - Data throughput up to 400 MBps (3,200 Mbps) - Configurable burst characteristics • Linear burst • Wrapped burst lengths: 16 bytes (8 clocks) 32 bytes (16 clocks) 64 bytes (32 clocks) 128 bytes (64 clocks) • Hybrid option - one wrapped burst followed by linear burst on 256 Mb. Linear Burst across die boundary is not supported. - Configurable output drive strength - Power modes • Hybrid sleep mode • Deep power down - Arrays refresh • Partial memory array (1/8, 1/4, 1/2, and so on) • Full - Package • 24-ball FBGA - Operating Temperature Range • Industrial (I): –40 °C to +85 °C • Industrial Plus (V): –40 °C to +105 °C • Automotive, AEC-Q100 Grade 3: –40 °C to +85 °C • Automotive, AEC-Q100 Grade 2: –40 °C to +105°C • Automotive, AEC-Q100 Grade 1: –40 °C to +125 °C • Technology - 25-nm DRAM Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document page 1 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Performance summary Performance summar y Read transaction timings Unit Maximum clock rate at 1.8 V VCC/VCCQ 200 MHz Maximum access time, (tACC) 35 ns Maximum current consumption Unit Burst read or write (linear burst at 200 MHz) 40 mA/44 mA Standby (105 °C) 3.1 mA Deep power down (105 °C) 30 μA Logi c blo ck diagram CS# CS# CK/CK# CK/CK# RWDS RWDS X Decoders 256 Mb HYPERRAM™ - Die1 0 HyperRAM I/O DQ[7:0] Control Logic Memory Y Decoders DQ[7:0] Data Latch RESET# Data Path X Decoders 256 Mb HYPERRAM™ - Die HyperRAM 2 1 CS# CK/CK# Memory RWDS I/O DQ[7:0] RESET# Control Logic Y Decoders Data Latch RESET# Data Path Datasheet 2 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Table of contents Table of contents 1 General description.........................................................................................................................5 1.1 xSPI (Octal) interface ..............................................................................................................................................5 2 Product overview ...........................................................................................................................7 2.1 xSPI (octal) interface...............................................................................................................................................7 3 Signal description ...........................................................................................................................8 3.1 Input/output summary...........................................................................................................................................8 4 xSPI (octal) transaction details ........................................................................................................9 4.1 Command/address/data bit assignments...........................................................................................................10 4.2 RESET ENABLE transaction ..................................................................................................................................11 4.3 RESET transaction.................................................................................................................................................11 4.4 READ ID transaction ..............................................................................................................................................12 4.5 DEEP POWER DOWN transaction .........................................................................................................................13 4.6 READ transaction ..................................................................................................................................................13 4.7 WRITE transaction.................................................................................................................................................14 4.8 WRITE ENABLE transaction ..................................................................................................................................14 4.9 WRITE DISABLE Transaction.................................................................................................................................15 4.10 READ ANY REGISTER transaction .......................................................................................................................15 4.11 WRITE ANY REGISTER transaction......................................................................................................................16 4.12 Data placement during memory READ/WRITE transactions ............................................................................17 4.13 Data placement during register READ/WRITE transactions..............................................................................18 5 Memory space ..............................................................................................................................19 5.1 xSPI (octal) interface.............................................................................................................................................19 5.2 Density and row boundaries ................................................................................................................................19 6 Register space access ....................................................................................................................20 6.1 xSPI (octal) interface.............................................................................................................................................20 6.2 Device identification registers..............................................................................................................................21 6.3 Device configuration registers .............................................................................................................................22 7 Interface states ............................................................................................................................28 8 Power conservation modes............................................................................................................29 8.1 Interface standby ..................................................................................................................................................29 8.2 Active clock stop ...................................................................................................................................................29 8.3 Hybrid sleep ..........................................................................................................................................................30 8.4 Deep power down .................................................................................................................................................31 9 Electrical specifications.................................................................................................................32 9.1 Absolute maximum ratings ..................................................................................................................................32 9.2 Input signal overshoot..........................................................................................................................................32 9.3 Latch-up characteristics .......................................................................................................................................33 9.4 Operating ranges ..................................................................................................................................................33 9.5 DC characteristics .................................................................................................................................................34 9.6 Power-up initialization .........................................................................................................................................38 9.7 Power down ..........................................................................................................................................................39 9.8 Hardware reset......................................................................................................................................................40 10 Timing specifications ..................................................................................................................41 10.1 Key to switching waveforms...............................................................................................................................41 10.2 AC test conditions ...............................................................................................................................................41 10.3 CLK characteristics .............................................................................................................................................42 10.4 AC characteristics................................................................................................................................................43 10.5 Timing reference levels.......................................................................................................................................46 11 Physical interface .......................................................................................................................47 11.1 FBGA 24-ball 5 x 5 array footprint ......................................................................................................................47 11.2 Physical diagram.................................................................................................................................................48 Datasheet 3 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Table of contents 12 Ordering information ..................................................................................................................49 12.1 Ordering part number.........................................................................................................................................49 12.2 Valid combinations .............................................................................................................................................50 12.3 Valid combinations - Automotive grade / AEC-Q100.........................................................................................50 13 Acronyms ...................................................................................................................................51 14 Document conventions................................................................................................................52 14.1 Units of measure .................................................................................................................................................52 Revision history ..............................................................................................................................53 Datasheet 4 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V General description 1 General description The 512-Mb HYPERRAM™ device is a high-speed CMOS, self-refresh DRAM, with xSPI (Octal) interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the xSPI interface master (host). Since the host is not required to manage any refresh operations, the DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as pseudo static RAM (PSRAM). Since the DRAM cells cannot be refreshed during a read or write transaction, there is a requirement that the host limit read or write burst transfers lengths to allow internal logic refresh operations when they are needed. The host must confine the duration of transactions and allow additional initial access latency, at the beginning of a new transaction, if the memory indicates a refresh operation is needed. The dual-die, 512-Mb HYPERRAM™ chip supports data transactions with additional (2X) latency only. 1.1 xSPI (Octal) interface xSPI (Octal) is a SPI-compatible low signal count, DDR interface supporting eight I/Os. The DDR protocol in xSPI (Octal) transfers two data bytes per clock cycle on the DQ input/output signals. A read or write transaction on xSPI (Octal) consists of a series of 16-bit wide, one clock cycle data transfers at the internal RAM array with two corresponding 8-bit wide, one-half-clock-cycle data transfers on the DQ signals. All inputs and outputs are LV-CMOS compatible. Device are available as 1.8 V VCC/VCCQ (nominal) for array (VCC) and I/O buffer (VCCQ) supplies, through different ordering part number (OPN). Each transaction on xSPI (Octal) must include a command whereas address and data are optional. The transactions are structures as follows: • Each transaction begins with CS# going LOW and ends with CS# returning HIGH. • The serial clock (CK) marks the transfer of each bit or group of bits between the host and memory. All transfers occur on every CK edge (DDR mode). • Each transaction has a 16-bit command which selects the type of device operation to perform. The 16-bit command is based on two 8-bit opcodes. The same 8-bit opcode is sent on both edges of the clock. • A command may be stand-alone or may be followed by address bits to select a memory location in the device to access data. • Read transactions require a latency period after the address bits and can be zero to several CK cycles. CK must continue to toggle during any read transaction latency period. During the command and address parts of a transaction, the memory indicates that an additional latency period is needed for a required refresh time (tRFH) by driving the RWDS signal to the HIGH state. • Write transactions to registers do not require a latency period. • Write transactions to the memory array require a latency period after the address bits and can be zero to several CK cycles. CK must continue to toggle during any write transaction latency period. During the command and address parts of a transaction, the memory indicates that an additional latency period is needed for a required refresh time (tRFH) by driving the RWDS signal to the HIGH state. • In all transactions, command and address bits are shifted in the device with the most significant bits (MSb) first. The individual data bits within a data byte are shifted in and out of the device MSb first as well. All data bytes are transferred with the lowest address byte sent out first. Datasheet 5 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V General description CS# CK#, CK High: 2X Latency Count Low: 1X Latency Count RWDS CMD [7:0] DQ[7:0] CMD [7:0] Command (Host drives DQ[7:0]) xSPI (octal) command only transaction (DDR)[1] Figure 1 CS# CK#, CK High: 2X Latency Count Low: 1X Latency Count RWDS CMD [7:0] DQ[7:0] CMD [7:0] ADR [31:24] ADR [23:16] ADR [15:8] ADR [7:0] Command - Address (Host drives DQ[7:0], Memory drives RWDS) RG [15:8] RG [7:0] Write Data xSPI (octal) write with no latency transaction (DDR) (register writes)[2] Figure 2 CS# CK#, CK Latency Count (2X) RWDS DQ[7:0] High: 2X Latency Count Low: 1X Latency Count RWDS acts as Data Mask CMD [7:0] CMD [7:0] ADR [31:24] ADR [23:16] ADR [15:8] ADR [7:0] DinA [7:0] Command - Address (Host drives DQ[7:0] and Memory drives RWDS) DinA+1 [7:0] DinA+2 [7:0] DinA+3 [7:0] Write Data (Host drives DQ[7:0]) xSPI (octal) write with 2X latency transaction (DDR) (memory array writes)[1, 3, 5] Figure 3 CS# CK#, CK Latency Count (2X) RWDS High: 2X Latency Count Low: 1X Latency Count RWDS & Data are edge aligned DQ[7:0] CMD [7:0] CMD [7:0] ADR [31:24] ADR [23:16] ADR [15:8] ADR [7:0] DoutA [7:0] Command - Address (Host drives DQ[7:0] and Memory drives RWDS) Figure 4 DoutA+1 [7:0] DoutA+2 [7:0] DoutB+3 [7:0] Read Data (Memory drives RWDS) xSPI (octal) read with 2X latency transaction (DDR) (all reads)[1, 5] Notes 1. The initial latency “Low = 1x Latency Count” is not applicable in dual-die, 512 Mb HYPERRAM™. 2. Write with no latency transaction is used for register writes only. 3. RWDS is driven by HYPERRAM™ during Command and Address cycles for 2X latency and then driven by the host for data masking. 4. Data DinA and DinA+2 are masked. 5. RWDS is driven by HYPERRAM™ during Command & Address cycles for 2X latency and then driven again phase aligned with data. Datasheet 6 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Product overview 2 Product overview The 512-Mb HYPERRAM™ device is 1.8 V array and I/O, synchronous self-refresh Dynamic RAM (DRAM). The HYPERRAM™ device provides an xSPI (Octal) slave interface to the host system. The xSPI (Octal) interface has an 8-bit (1 byte) wide DDR data bus and use only word-wide (16-bit data) address boundaries. Read transactions provide 16 bits of data during each clock cycle (8 bits on both clock edges). Write transactions take 16 bits of data from each clock cycle (8 bits on each clock edge). RESET# CS# CK CK# VCC VCCQ DQ[7:0] RWDS VSS VSSQ Figure 5 xSPI (octal) HYPERRAM™ interface[6] 2.1 xSPI (octal) interface Read and write transactions require three clock cycles to define the target row/column address and then an initial access latency of tACC. During the CA part of a transaction, the memory indicates an additional latency for a required refresh time (tRFH) by driving the RWDS signal to the HIGH state. During a read (or write) transaction, after the initial data value has been output (or input), additional data can be read from (or written to) the row on subsequent clock cycles in either a wrapped or linear sequence. When configured in linear burst mode, the device will automatically fetch the next sequential row from the memory array to support a continuous linear burst. Simultaneously accessing the next row in the array while the read or write data transfer is in progress, allows for a linear sequential burst operation that can provide a sustained data rate of 400 MBps (1 byte (8 bit data bus) * 2 (data clock edges) * 200 MHz = 400 MBps). Note 6. CK# is used in differential clock mode, but optional. Datasheet 7 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Signal description 3 Signal description 3.1 Input/output summary The xSPI (Octal) HyperRAM signals are shown in Table 1. Active Low signal names have a hash symbol (#) suffix. Table 1 I/O summary Symbol Type Description CS# Input Chip select. Bus transactions are initiated with a HIGH to LOW transition. Bus transactions are terminated with a Low to High transition. The master device has a separate CS# for each slave. CK, CK#[7] Input Differential clock. Command, address, and data information is output with respect to the crossing of the CK and CK# signals. Use of differential clock is optional. Single ended clock. CK# is not used, only a single ended CK is used. The clock is not required to be free-running. DQ[7:0] Input/output Data input/output. Command, address, and data information is transferred on these signals during read and write transactions. RWDS Read-write data strobe. During the command/address portion of all bus transactions RWDS is a slave output and indicates whether additional initial latency is required. Slave output during read data transfer, data is edge aligned Input/output with RWDS. Slave input during data transfer in write transactions to function as a data mask. The dual-die, 512-Mb HYPERRAM™ chip supports data transactions with additional (2X) latency only. RESET# Hardware RESET. When LOW, the slave device will self initialize and return to Input, internal the Standby state. RWDS and DQ[7:0] are placed into the HIGH-Z state when pull-up RESET# is LOW. The slave RESET# input includes a weak pull-up, if RESET# is left unconnected it will be pulled up to the HIGH state. VCC VCCQ VSS VSSQ RFU Power supply Array power. Power supply Input/output power. Power supply Array ground. Power supply Input/output ground. No connect Reserved for future use. May or may not be connected internally, the signal/ball location should be left unconnected and unused by PCB routing channel for future compatibility. The signal/ball may be used by a signal in the future. Note 7. CK# is used in differential clock mode, but optional connection. Tie the CK# input pin to either VccQ or VssQ if not connected to the host controller, but do not leave it floating. Datasheet 8 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V xSPI (octal) transaction details 4 xSPI (octal) transaction details The xSPI (octal) master begins a transaction by driving CS# LOW while clock is idle. Then the clock begins toggling while CA words are transferred. For memory Read and Write transactions, the xSPI (octal) master then continues clocking for a number of cycles defined by the latency count setting in configuration register 0 (register write transactions do not require any latency count). The initial latency count required for a particular clock frequency is based on RWDS. If RWDS is LOW during the CA cycles, one latency count is inserted. If RWDS is HIGH during the CA cycles, an additional latency count is inserted. Once these latency clocks have been completed the memory starts to simultaneously transition the RWDS and output the target data. The dual-die, 512-Mb HYPERRAM™ chip supports data transactions with additional (2X) latency only. During the read data transfers, read data is output edge aligned with every transition of RWDS. Data will continue to be output as long as the host continues to transition the clock while CS# is LOW. Note that burst transactions should not be so long as to prevent the memory from doing distributed refreshes. During the write data transfers, write data is center-aligned with the clock edges. The first byte of data in each word is captured by the memory on the rising edge of CK and the second byte is captured on the falling edge of CK. RWDS is driven by the host master interface as a data mask. When data is being written and RWDS is HIGH the byte will be masked and the array will not be altered. When data is being written and RWDS is LOW the data will be placed into the array. Because the master is driving RWDS during write data transfers, neither the master nor the HyperRAM device are able to indicate a need for latency within the data transfer portion of a write transaction. The acceptable write data burst length setting is also shown in configuration register 0. Wrapped bursts will continue to wrap within the burst length and linear burst will output data in a sequential manner across row boundaries. When a linear burst read reaches the last address in the array, continuing the burst beyond the last address will provide data from the beginning of the address range. Linear burst across die boundary is not supported. In case of the linear burst access, if the address auto increments to the specific die boundary (either die 0 or die 1), the address will wrap around the specific die boundary. Read transfers can be ended at any time by bringing CS# HIGH when the clock is idle. The clock is not required to be free-running. The clock may remain idle while CS# is HIGH. Datasheet 9 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V xSPI (octal) transaction details 4.1 Command/address/data bit assignments Table 2 Command set[8-12] Code CA-Data Address (bytes) Latency cycles Data (bytes) REST ENABLE 0x66 8-0-0 0 0 0 RESET 0x99 8-0-0 0 0 0 0x9F 8-8-8 4 (0x00) 3-7 4 0xB9 8-0-0 0 0 0 0xEE 8-8-8 4 3-7 1 to  0xDE 8-8-8 4 3-7 1 to  WRITE ENABLE 0x06 8-0-0 0 0 0 WRITE DISABLE 0x04 8-0-0 0 0 0 0x65 8-8-8 4 3-7 2 0x71 8-8-8 4 0 2 Command Prerequisite Software reset RESET ENABLE Identification READ ID[8] Power modes DEEP POWER DOWN Read memory array READ (DDR) Write memory array WRITE (DDR) WRITE ENABLE Write enable / disable Read registers READ ANY REGISTER Write registers WRITE ANY REGISTER WRITE ENABLE Notes 8. The two identification registers contents are read together - identification 0 followed by identification 1. 9. Write enable provides protection against inadvertent changes to memory or register values. It sets the internal write enable latch (WEL) which allows write transactions to execute afterwards. 10.Write disable can be used to disable write transactions from execution. It resets the internal write enable latch (WEL). 11.The WEL latch stays set to ‘1’ at the end of any successful memory write transaction. After a power down / power up sequence, or a hardware/software reset, WEL latch is cleared to ‘0’. 12. The internal WEL latch is cleared to ‘0’ at the end of any successful register write transaction. Datasheet 10 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V xSPI (octal) transaction details 4.2 RESET ENABLE transaction The RESET ENABLE transaction is required immediately before a RESET transaction. Any transaction other than RESET following RESET ENABLE will clear the reset enable condition and prevent a later RESET transaction from being recognized. CS# CK#, CK High: 2X Latency Count Low: 1X Latency Count RWDS CMD [7:0] DQ[7:0] CMD [7:0] Command (Host drives DQ[7:0]) Figure 6 RESET ENABLE transaction (DDR)[13] 4.3 RESET transaction The RESET transaction immediately following a RESET ENABLE will initiate the software reset process. The software reset provides a software method of returning the device to the standby state. During tSR (400 ns, max) the device will draw ICC5 current. A software reset will: • Cause the configuration registers to return to their default values • Halt self-refresh operation during the software reset process - memory array data is considered invalid After software reset finishes, the self-refresh operation will resume. Because self-refresh operation is stopped, and the self-refresh row counter is reset to its default value, some rows may not be refreshed within the required array refresh interval. This may result in the loss of DRAM array data. The host system should consider DRAM array data is lost after software reset and reload any required data. CS# CK#, CK RWDS High: 2X Latency Count Low: 1X Latency Count CMD [7:0] DQ[7:0] CMD [7:0] Command (Host drives DQ[7:0]) Figure 7 Datasheet RESET transaction (DDR)[13] 11 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V xSPI (octal) transaction details 4.4 READ ID transaction The READ ID transaction provides read access to device identification registers 0 and 1. The registers contain the manufacturer’s identification along with device identification. The read data sequence is as follows. Table 3 READ ID data sequence Address space Byte order Byte position A Register 0 Big-endian B A Register 1 Big-endian B Word data bit DQ 15 7 14 6 13 5 12 4 11 3 10 2 9 1 8 0 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 0 15 7 14 6 13 5 12 4 11 3 10 2 9 1 8 0 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 0 Note 13. The initial latency “Low = 1x Latency Count” is not applicable in dual-die, 512-Mb HYPERRAM™. Datasheet 12 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V xSPI (octal) transaction details CS# CK#, CK Latency Count (2X) RWDS High: 2X Latency Count Low: 1X Latency Count RWDS & Data are edge aligned DQ[7:0] CMD [7:0] CMD [7:0] 0x00 0x00 0x00 IDRG 0 [15:8] 0x00 Command - Address (Host drives DQ[7:0] and Memory drives RWDS) IDRG 0 [7:0] IDRG 1 [15:8] IDRG 1 [7:0] Read Data (Memory drives RWDS) Figure 8 READ ID with 2X latency transaction (DDR)[14] 4.5 DEEP POWER DOWN transaction DEEP POWER DOWN transaction brings the device into Deep Power Down state which is the lowest power consumption state. Writing a “0” to CR0[15] will also bring the device in deep power down state. All register contents are lost in Deep Power Down State and the device powers-up in its default state. CS# CK#, CK High: 2X Latency Count Low: 1X Latency Count RWDS CMD [7:0] DQ[7:0] CMD [7:0] Command (Host drives DQ[7:0]) Figure 9 DEEP POWER DOWN transaction (DDR)[14] 4.6 READ transaction The READ transaction reads data from the memory array. It has a latency requirement (dummy cycles) which allows the device’s internal circuitry enough time to access the addressed memory location. During these latency cycles, the host can tristate the data bus DQ[7:0]. CS# CK#, CK Latency Count (2X) RWDS High: 2X Latency Count Low: 1X Latency Count RWDS & Data are edge aligned DQ[7:0] CMD [7:0] CMD [7:0] ADR [31:24] ADR [23:16] ADR [15:8] ADR [7:0] DoutA [7:0] Command - Address (Host drives DQ[7:0] and Memory drives RWDS) Figure 10 DoutA+1 [7:0] DoutA+2 [7:0] DoutB+3 [7:0] Read Data (Memory drives RWDS) READ with 2X latency transaction (DDR)[14, 15] Notes 14. The initial latency “Low = 1x Latency Count” is not applicable in dual-die, 512-Mb HYPERRAM™. 15. RWDS is driven by HYPERRAM™ during Command and Address cycles for 2X latency and then is driven again phase aligned with data. Datasheet 13 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V xSPI (octal) transaction details 4.7 WRITE transaction The WRITE transaction writes data to the memory array. It has a latency requirement (dummy cycles) which allows the device’s internal circuitry enough time to access the addressed memory location. During these latency cycles, the host can tristate the data bus DQ[7:0]. WRITE ENABLE transaction which sets the WEL latch must be executed before the first WRITE. The WEL latch stays set to ‘1’ at the end of any successful memory write transaction. It must be reset by WRITE DISABLE transaction to prevent any inadvertent writes to the memory array. CS# CK#, CK Latency Count (2X) RWDS DQ[7:0] High: 2X Latency Count Low: 1X Latency Count RWDS acts as Data Mask CMD [7:0] CMD [7:0] ADR [31:24] ADR [23:16] ADR [15:8] ADR [7:0] DinA [7:0] Command - Address (Host drives DQ[7:0] and Memory drives RWDS) DinA+1 [7:0] DinA+2 [7:0] DinA+3 [7:0] Write Data (Host drives DQ[7:0]) Figure 11 WRITE with 2X latency transaction (DDR)[16, 17, 18] 4.8 WRITE ENABLE transaction The WRITE ENABLE transaction must be executed prior to any transaction that modifies data either in the memory array or the registers. CS# CK#, CK High: 2X Latency Count Low: 1X Latency Count RWDS CMD [7:0] DQ[7:0] CMD [7:0] Command (Host drives DQ[7:0]) Figure 12 WRITE ENABLE transaction (DDR)[17] Notes 16. RWDS is driven by HYPERRAM™ during command and address cycles for 2X latency and then is driven again phase aligned with data. 17. The initial latency “Low = 1x Latency Count” is not applicable in dual-die, 512-Mb HYPERRAM™. 18. Data DinA and DinA+2 are masked. Datasheet 14 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V xSPI (octal) transaction details 4.9 WRITE DISABLE Transaction The WRITE DISABLE transaction inhibits writing data either in the memory array or the registers. CS# CK#, CK High: 2X Latency Count Low: 1X Latency Count RWDS CMD [7:0] DQ[7:0] CMD [7:0] Command (Host drives DQ[7:0]) Figure 13 WRITE DISABLE transaction (DDR)[20] 4.10 READ ANY REGISTER transaction The READ ANY REGISTER transaction reads all the device registers. It has a latency requirement (dummy cycles) which allows the device’s internal circuitry enough time to access the addressed register location. During these latency cycles, the host can tristate the data bus DQ[7:0]. CS# CK#, CK RWDS Latency Count (2X) High: 2X Latency Count Low: 1X Latency Count RWDS & Data are edge aligned DQ[7:0] CMD [7:0] CMD [7:0] ADR [31:24] ADR [23:16] ADR [15:8] ADR [7:0] Command - Address (Host drives DQ[7:0] and Memory drives RWDS) Figure 14 RG [15:8] RG [7:0] Read Data (Memory drives RWDS) READ ANY REGISTER with 2X latency transaction (DDR)[19, 20] Notes 19. RWDS is driven by HYPERRAM™ during Command & Address cycles for 2X latency and then driven again phase aligned with data. 20. The initial latency “Low = 1x Latency Count” is not applicable in dual-die, 512-Mb HYPERRAM™. Datasheet 15 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V xSPI (octal) transaction details 4.11 WRITE ANY REGISTER transaction The WRITE ANY REGISTER transaction writes to the device registers. It does not have a latency requirement (dummy cycles). CS# CK#, CK RWDS DQ[7:0] High: 2X Latency Count Low: 1X Latency Count CMD [7:0] CMD [7:0] ADR [31:24] ADR [23:16] ADR [15:8] Command - Address (Host drives DQ[7:0], Memory drives RWDS) Figure 15 ADR [7:0] RG [15:8] RG [7:0] Write Data xSPI (octal) write with no latency transaction (DDR) (register writes)[21-23] Notes 21. The initial latency “Low = 1x latency count” is not applicable in dual-die, 512-Mb HYPERRAM™. 22. Write with no latency transaction is used for register writes only. 23. Data Mask on RWDS is not supported. Datasheet 16 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V xSPI (octal) transaction details 4.12 Data placement during memory READ/WRITE transactions Data placement during memory read/write is dependent upon the host. The device will output data (read) as it was written in (write). Hence both big endian and little endian are supported for the memory array. Table 4 Address space Data placement during memory READ and WRITE Byte order Byte position A Bigendian B Memory A Littleendian B Datasheet Word data bit DQ 15 7 14 6 13 5 12 4 11 3 10 2 9 1 8 0 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 0 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 0 15 7 14 6 13 5 12 4 11 3 10 2 9 1 8 0 Bit order When data is being accessed in memory space: The first byte of each word read or written is the “A” byte and the second is the “B” byte. The bits of the word within the A and B bytes depend on how the data was written. If the word lower address bits 7–0 are written in the A byte position and bits 15–8 are written into the B byte position, or vice versa, they will be read back in the same order. So, memory space can be stored and read in either little-endian or big-endian order. 17 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V xSPI (octal) transaction details 4.13 Data placement during register READ/WRITE transactions Data placement during register read/write is big endian. Table 5 Address space Data placement during register READ/WRITE transactions Byte order Byte position A Register Bigendian B Datasheet Word data bit DQ 15 7 14 6 13 5 12 4 11 3 10 2 9 1 8 0 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 0 18 of 54 Bit order When data is being accessed in register space: During a read transaction on the xSPI (octal) two bytes are transferred on each clock cycle. The upper order byte A (word[15:8]) is transferred between the rising and falling edges of RWDS (edge aligned). The lower order byte B (Word[7:0]) is transferred between the falling and rising edges of RWDS. During a write, the upper order byte A (Word[15:8]) is transferred on the CK rising edge and the lower order byte B (Word[7:0]) is transferred on the CK falling edge. So, register space is always read and written in Big-endian order because registers have device dependent fixed bit location and meaning definitions. 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Memory space 5 Memory space 5.1 xSPI (octal) interface Table 6 Memory space address map (byte based - 8 bits with least significant bit A(0) always set to ‘0’) Unit type Count System byte address bits Address bits Rows within 512 Mb device 65536 (rows) A24–A9 37–22 64 (half-pages) A9–A4 9–4 Each row has 64 Half-pages. Each Half-page has 16 bytes. Each column has 1K bytes. 3–0 Half-page (HP) address is also referenced as upper column address. A word within a HP address is also referenced as lower column address. A0 always set to “0” Row Half-page 5.2 16 (byte addresses) A3–A0 Notes – Density and row boundaries The DRAM array size (density) of the device can be determined from the total number of system address bits used for the row and column addresses as indicated by the row address bit count and column address bit count fields in the ID0 register. For example: a 512-Mb HYPERRAM™ device has 10 column address bits and 16 row address bits for a total of 26 address bits (byte address) = 226 = 64M bytes (32M words). The 10 column address bits indicate that each row holds 210 = 1K bytes or 512 words. The row address bit count indicates there are 65536 rows to be refreshed within each array refresh interval. The row count is used in calculating the refresh interval. Datasheet 19 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Register space access 6 Register space access 6.1 xSPI (octal) interface Table 7 Register space address map (address bit A0 always set to ‘0’) Registers Write/read Address (byte addressable) Identification registers 0 (ID0[15:0]) - die 0 Read 0x00000000 Identification registers 0 (ID0[15:0]) - die 1 Read 0x02000000 Identification registers 1 (ID1[15:0]) - die 0 Read 0x00000002 Identification registers 1 (ID1[15:0]) - die 1 Read 0x02000002 Configuration registers 0 (ID0[15:0]) - Die 0 Read 0x00000004 Configuration registers 0 (ID0[15:0]) - die 1 Read 0x02000004 Configuration registers 1 (ID1[15:0]) - die 0 Read 0x00000006 Configuration registers 1 (ID1[15:0]) - die 1 Read 0x02000006 Configuration register 0 - die 0 / 1[24] Write 0x00000004 Configuration register 1 - die 0 / 1[24] Write 0x00000006 Note 24. Register write executes write to both die at the same time. Datasheet 20 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Register space access 6.2 Device identification registers There are two read-only, nonvolatile, word registers, that provide information on the device selected when CS# is LOW. The device information fields identify: • Manufacturer • Type • Density - Row address bit count - Column address bit count • Refresh type Table 8 Identification register 0 (ID0) bit assignments Bits Function [15:14] Reserved 00b - die 0 01b - die 1 13 Reserved 0 - default [12:8] Settings (binary) Row address bit count 00000 - one row address bit ... 11111 - thirty-two row address bits ... 01111 - sixteen row address bits (512 Mb) [7:4] Column address bit count [3:0] Manufacturer 0000 - one column address bits ... 1001 - ten column address bits (default) ... 1111 - sixteen column address bits 0110b ID0 value for S80KS5123 is 0x0E96 if read from Die 0 or 0x4F96 if read from Die 1. Refer to Table 7 for register map of each die. Table 9 Datasheet Identification register 1 (ID1) bit assignments Bits Function [15:4] Reserved [3:0] Device type Settings (Binary) 0000_0000_0000 (default) 0001 - HYPERRAM™ 2.0 21 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Register space access 6.3 Device configuration registers 6.3.1 Configuration register 0 (CR0) Configuration register 0 (CR0) is used to define the power state and access protocol operating conditions for the HYPERRAM™ device. Configurable characteristics include: • Wrapped burst length (16, 32, 64, or 128 byte aligned and length data group) • Wrapped burst type - Legacy wrap (sequential access with wrap around within a selected length and aligned group) - Hybrid wrap (Legacy wrap once then linear burst at start of the next sequential group) • Initial latency • Variable latency - Whether an array read or write transaction will use fixed or variable latency. If fixed latency is selected the memory will always indicate a refresh latency and delay the read data transfer accordingly. If variable latency is selected, latency for a refresh is only added when a refresh is required at the same time a new transaction is starting. • Output drive strength • Deep power down (DPD) mode Datasheet 22 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Register space access Table 10 Configuration register 0 (CR0) bit assignments CR0 bit Function Settings (binary) [15] Deep power down enable 1 - Normal operation (default). HYPERRAM™ will automatically set this value to ‘1’ after DPD exit 0 - Writing 0 causes the device to enter deep power down Device automatically sets the value of CR0[15] to ‘1’ after exit DPD. [14:12] Drive strength [11:8] Reserved [7:4] Initial latency [3] Fixed latency enable 000 - 34 ohms (default) 001 - 115 ohms 010 - 67 ohms 011 - 46 ohms 100 - 34 ohms 101 - 27 ohms 110 - 22 ohms 111 - 19 ohms 1 - Reserved (default) Reserved for future use. When writing this register, these bits should be set to 1 for future compatibility. 0000 - 5 clock latency @ 133 MHz Max frequency 0001 - 6 clock latency @ 166 MHz Max frequency 0010 - 7 clock latency @ 200 MHz Max frequency (default) 0011 - Reserved 0100 - Reserved ... 1101 - reserved 1110 - 3 clock latency @ 85 Max frequency 1111 - 4 clock latency @ 104 Max frequency 0 - reserved 1 - fixed 2 times initial latency (default) The 512-Mb dual-die stack only supports fixed latency. In fixed latency mode, when CS# asserted LOW, 1. The RWDS signal of each die of dual-die 512-Mb will always drive to HIGH during CA phase. 2. The RWDS signal of the non-selected die of dual-die 512-Mb will always drive to Hi-Z after CA phase. 3. The RWDS signal of the selected die of dual-die 512-Mb will drive to L after CA phase. [2] Hybrid burst enable 0: Wrapped burst sequence to follow hybrid burst sequencing 1: Wrapped burst sequence in legacy wrapped burst manner (default) This bit setting is effective only when the “Burst Type” bit in the Command/Address register is set to ‘0’, i.e. CA[45] = ‘0’; otherwise, it is ignored. [1:0] Datasheet Burst length 00 - 128 bytes 01 - 64 bytes 10 - 16 bytes 11 - 32 bytes (default) 23 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Register space access Wrapped burst A wrapped burst transaction accesses memory within a group of words aligned on a word boundary matching the length of the configured group. Wrapped access groups can be configured as 16, 32, 64, or 128 bytes alignment and length. During wrapped transactions, access starts at the CA selected location within the group, continues to the end of the configured word group aligned boundary, then wraps around to the beginning location in the group, then continues back to the starting location. Wrapped bursts are generally used for critical word first instruction or data cache line fill read accesses. Wrapped burst across die boundary is not supported. Hybrid burst The beginning of a hybrid burst will wrap within the target address wrapped burst group length before continuing to the next half-page of data beyond the end of the wrap group. Continued access is in linear burst order until the transfer is ended by returning CS# HIGH. This hybrid of a wrapped burst followed by a linear burst starting at the beginning of the next burst group, allows multiple sequential address cache lines to be filled in a single access. The first cache line is filled starting at the critical word. Then the next sequential line in memory can be read in to the cache while the first line is being processed. Hybrid burst across die boundary is not supported. Table 11 CR0[2] control of wrapped burst sequence Bit Default value CR0[2] 1b Table 12 Burst type Hybrid 128 Hybrid 64 Hybrid Burst Enable CR0[2] = 0: Wrapped burst sequence to follow hybrid burst sequencing CR0[2] = 1: Wrapped burst sequence in legacy wrapped burst manner Example wrapped burst sequences (addressing) Wrap boundary (bytes) 128 wrap once then linear 64 wrap once then linear Hybrid 64 64 wrap once then linear Hybrid 16 16 wrap once then linear Hybrid 16 16 wrap once then linear Datasheet Setting details Start address (hex) Sequence of byte addresses (hex) of data words XXXXXX03 03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 1A, 1B, 1C, 1D, 1E, 1F, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 2A, 2B, 2C, 2D, 2E, 2F, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 3A, 3B, 3C, 3D, 3E, 3F, 00, 01, 02 (Wrap complete, now linear beyond the end of the initial 128 byte wrap group) 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 4A, 4B, 4C, 4D, 4E, 4F, 50, 51, ... XXXXXX02 02, 04, 06, 08, 0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 20, 22, 24, 26, 28, 2A, 2C, 2E, 30, 32, 34, 36, 38, 3A, 3C, 3E, 00 (wrap complete, now linear beyond the end of the initial 64 byte wrap group) 40, 42, 44, 46, 48, 4A, 4C, 4E, 50, 52, ... XXXXXX2E 2E, 30, 32, 34, 36, 38, 3A, 3C, 3E, 00, 02, 04, 06, 08, 0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 20, 22, 24, 26, 28, 2A, 2C (wrap complete, now linear beyond the end of the initial 64 byte wrap group) 40, 42, 44, 46, 48, 4A, 4B, 4C, 4D, 4E, 4F, 50, 52, ... XXXXXX02 02, 04, 06, 08, 0A, 0C, 0E, 00 (wrap complete, now linear beyond the end of the initial 16 byte wrap group) 10, 12, 14, 16, 18, 1A, .. XXXXXX0C 0C, 0E, 00, 02, 04, 06, 08, 0A (wrap complete, now linear beyond the end of the initial 16 byte wrap group) 10, 12, 14, 16, 18, 1A, ... 24 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Register space access Table 12 Example wrapped burst sequences (addressing) (Continued) Burst type Wrap boundary (bytes) Start address (hex) Sequence of byte addresses (hex) of data words Hybrid 32 32 wrap once then linear XXXXXX0A 0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 00, 02, 04, 06, 08 (wrap complete, now linear beyond the end of the initial 32 byte wrap group) 20, 22, 24, 26, 28, 2A, ... Wrap 64 64 XXXXXX02 02, 04, 06, 08, 0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 20, 22, 24, 26, 28, 2A, 2C, 2E, 30, 32, 34, 36, 38, 3A, 3C, 3E, 00, ... Wrap 64 64 XXXXXX2E 2E, 30, 32, 34, 36, 38, 3A, 3C, 3E, 00, 02, 04, 06, 08, 0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 20, 22, 24, 26, 28, 2A, 2C, 2E, 30, …. Wrap 16 16 XXXXXX02 02, 04, 06, 08, 0A, 0C, 0E, 00, ... Wrap 16 16 XXXXXX0C 0C, 0E, 00, 02, 04, 06, 08, 0A, ... Wrap 32 32 XXXXXX0A 0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 00, 02, 04, 06, 08, ... Linear Linear burst XXXXXX02 02, 04, 06, 08, 0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 20, 22, ... Initial latency Memory space read and write transactions or register space read transactions require some initial latency to open the row selected by the CA. This initial latency is tACC. The number of latency clocks needed to satisfy tACC depends on the clock input frequency can vary from 3 to 7 clocks. The value in CR0[7:4] selects the number of clocks for initial latency. The default value is 7 clocks, allowing for operation up to a maximum frequency of 200MHz prior to the host system setting a lower initial latency value that may be more optimal for the system. In the event a distributed refresh is required at the time a memory space read or write transaction or register space read transaction begins, the RWDS signal goes High during the CA to indicate that an additional initial latency is being inserted to allow a refresh operation to complete before opening the selected row. Register space write transactions always have zero initial latency. RWDS may be HIGH or LOW during the CA period. The level of RWDS during the CA period does not affect the placement of register data immediately after the CA, as there is no initial latency needed to capture the register data. A refresh operation may be performed in the memory array in parallel with the capture of register data. Fixed latency A configuration register option bit CR0[3] is provided to make all memory space read and write transactions or register space read transactions require the same initial latency by always driving RWDS HIGH during the CA to indicate that two initial latency periods are required. This fixed initial latency is independent of any need for a distributed refresh, it simply provides a fixed (deterministic) initial latency for all of these transaction types. Fixed latency is the default POR or reset configuration. Drive strength DQ and RWDS signal line loading, length, and impedance vary depending on each system design. Configuration register bits CR0[14:12] provide a means to adjust the DQ[7:0] and RWDS signal output impedance to customize the DQ and RWDS signal impedance to the system conditions to minimize high speed signal behaviors such as overshoot, undershoot, and ringing. The default POR or reset configuration value is 000b to select the mid point of the available output impedance options. The impedance values shown are typical for both pull-up and pull-down drivers at typical silicon process conditions, nominal operating voltage (1.8 V) and 50 °C. The impedance values may vary from the typical values depending on the process, voltage, and temperature (PVT) conditions. Impedance will increase with slower process, lower voltage, or higher temperature. Impedance will decrease with faster process, higher voltage, or lower temperature. Each system design should evaluate the data signal integrity across the operating voltage and temperature ranges to select the best drive strength settings for the operating conditions. Datasheet 25 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Register space access Deep power down When the HYPERRAM™ device is not needed for system operation, it may be placed in a very low power consuming state called Deep Power Down (DPD), by writing 0 to CR0[15]. When CR0[15] is cleared to 0, the device enters the DPD state within tDPDIN time and all refresh operations stop. The data in RAM is lost, (becomes invalid without refresh) during DPD state. Exiting DPD requires driving CS# LOW then HIGH, POR, or a reset. Only CS# and RESET# signals are monitored during DPD mode. For additional details, see “Deep power down” on page 31. 6.3.2 Configuration register 1 Configuration register 1 (CR1) is used to define the refresh array size, refresh rate and hybrid sleep for the HYPERRAM™ device. Configurable characteristics include: • Partial array refresh • Hybrid sleep state • Refresh rate Table 13 CR1 bit Configuration register 1 (CR1) bit assignments Function Setting (binary) 11111111 - reserved (default) [15:8] Reserved [7] Burst type [6] Master clock type 1 - single ended - CK (default) 0 - differential - CK#, CK [5] Hybrid sleep 1 - causes the device to enter hybrid sleep State 0 - normal operation (default) Partial array refresh 000 - full array (default) 001 - bottom 1/2 Array 010 - bottom 1/4 Array 011 - bottom 1/8 Array 100 - none 101 - top 1/2 Array 110 - top 1/4 Array 111 - top 1/8 Array [4:2] [1:0] When writing this register, these bits should keep 0xFFh for future compatibility. 1 - linear burst (default) 0 - wrapped burst 10 - 1 µs tCSM (Industrial Plus temperature range devices) Distributed 11 - reserved refresh interval 00 - reserved (read only) 01 - 4 µs tCSM (Industrial temperature range devices) Burst type Two burst types, namely linear and wrapped, are supported in xSPI (Octal) mode by HYPERRAM™. CR1[7] selects which type to use. Master clock type Two clock types, namely single ended and differential, are supported. CR1[6] selects which type to use. • In the single ended clock mode (by default), CK# input is not enabled; hence it may be left either floating or biased to HIGH or LOW. • In the differential clock mode (when enabled), the CK# input can’t be left floating. It must be either driven by the host, or biased to HIGH or LOW. Datasheet 26 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Register space access Partial array refresh The partial array refresh configuration restricts the refresh operation in HYPERRAM™ to a portion of the memory array specified by CR1[5:3]. This reduces the standby current. The default configuration refreshes the whole array. Hybrid sleep (HS) When the HYPERRAM™ is not needed for system operation but data in the device needs to be retained, it may be placed in Hybrid Sleep state to save more power. Enter hybrid sleep state by writing 1 to CR1[5]. Bringing CS# LOW will cause the device to exit HS state and set CR1[5] to 0. Also, POR, or a hardware reset will cause the device to exit Hybrid Sleep state. Note that a POR or a hardware reset disables refresh where the memory core data can potentially get lost. Distributed refresh interval The HYPERRAM™ device is built with volatile DRAM array which requires periodic refresh of all bits in it. The refresh operation can be done by an internal self-refresh logic that will evenly refresh the memory array automatically. The automatic refresh operation can only be done when the memory array is not actively read or written by the host system. The refresh logic waits for the end of any active read or write before doing a refresh, if a refresh is needed at that time. If a new read or write begins before the refresh is completed, the memory will drive RWDS high during the CA period to indicate that an additional initial latency time is required at the start of the new access in order to allow the refresh operation to complete before starting the new access. The evenly distributed refresh operations require a maximum refresh interval between two adjacent refresh operations. The maximum distributed refresh interval varies with temperature as shown in Table 14. Table 14 Array refresh interval per temperature Operating temperature TA 85 °C 85 °C  TA  125 °C Refresh interval tCSM CR1[1:0] 4 μs 01b 1 μs 10b The distributed refresh operation requires that the host does not perform burst transactions longer than the distributed refresh interval to prevent the memory from unable doing the distributed refreshes operation when it is needed. This sets an upper limit on the length of read and write transactions so that the automatic distributed refresh operation can be done between transactions. This limit is called the CS# low maximum time (tCSM) and the tCSM will be equal to the maximum distributed refresh interval. The host system is required to respect the tCSM value by terminating each transaction before violating tCSM. This can be done by host memory controller splitting long transactions when reaching the tCSM limit, or by host system hardware or software not performing a single burst read or write transaction that would be longer than tCSM. As noted in Table 14, the maximum refresh interval is longer at lower temperatures such that tCSM could be increased to allow longer transactions. The host may determine the operating temperature from a temperature sensor in the system and use the tCSM value from the table accordingly, or it may determine dynamically by reading the read only CR1[1:0] bits in order to set the distributed refresh interval prior to the HYPERRAM™ access. Datasheet 27 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Interface states 7 Interface states Table 15 describes the required value of each signal for each interface state. Table 15 Interface states Interface state Power-off VCC / VCCQ CS# CK, CK# DQ7–DQ0 RWDS RESET# < VLKO X X HIGH-Z HIGH-Z X X X HIGH-Z HIGH-Z X X X HIGH-Z HIGH-Z L Interface standby  VCC / VCCQ min  VCC / VCCQ min  VCC / VCCQ min H X HIGH-Z HIGH-Z H CA  VCC / VCCQ min L T Master output valid Y H Read initial access latency (data bus turn around period)  VCC / VCCQ min L T HIGH-Z L H Write initial access latency (RWDS turn around period)  VCC / VCCQ min L T HIGH-Z HIGH-Z H Read data transfer  VCC / VCCQ min L T Slave output valid Slave output valid Z or T H Write data transfer with initial latency  VCC / VCCQ min L T Master output valid Master output valid X or T H Write data transfer without initial latency [25]  VCC / VCCQ min L T Master output valid Slave output L or HIGH-Z H Active clock stop [26]  VCC / VCCQ min L Idle Master or slave output valid or HIGH-Z Y H Deep power down  VCC / VCCQ min  VCC / VCCQ min H X or T HIGH-Z HIGH-Z H H X or T HIGH-Z HIGH-Z H Power-on (cold) reset Hardware (warm) reset Hybrid sleep Legend L = VIL; H = VIH; X = Either VIL or VIH; Y = Either VIL or VIH or VOL or VOH; Z = Either VOL or VOH; L/H = Rising edge; H/L = Falling edge; T = Toggling during information transfer; Idle = CK is LOW and CK# is HIGH; Valid = All bus signals have stable L or H level Notes 25. Writes without initial latency (with zero initial latency), do not have a turn around period for RWDS. The HYPERRAM™ device will always drive RWDS during the CA period to indicate whether extended latency is required. Since master write data immediately follows the CA period the HYPERRAM™ device may continue to drive RWDS LOW or may take RWDS to HIGH-Z. The master must not drive RWDS during Writes with zero latency. Writes with zero latency do not use RWDS as a data mask function. All bytes of write data are written (full word writes). 26. Active Clock Stop is described in “Active clock stop” on page 29. DPD is described in “Deep power down” on page 31. Datasheet 28 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Power conservation modes 8 Power conservation modes 8.1 Interface standby Standby is the default, low power, state for the interface while the device is not selected by the host for data transfer (CS# = HIGH). All inputs, and outputs other than CS# and RESET# are ignored in this state. 8.2 Active clock stop Design Note: Active clock stop feature is pending device characterization to determine if it will be supported. The active clock stop state reduces device interface energy consumption to the ICC6 level during the data transfer portion of a read or write operation. The device automatically enables this state when clock remains stable for tACC + 30 ns. While in Active Clock Stop state, read data is latched and always driven onto the data bus. ICC6 shown in “DC characteristics” on page 34. Active clock stop state helps reduce current consumption when the host system clock has stopped to pause the data transfer. Even though CS# may be LOW throughout these extended data transfer cycles, the memory device host interface will go into the active clock stop current level at tACC + 30 ns. This allows the device to transition into a lower current state if the data transfer is stalled. Active read or write current will resume once the data transfer is restarted with a toggling clock. The active clock stop state must not be used in violation of the tCSM limit. CS# must go HIGH before tCSM is violated. Clock can be stopped during any portion of the active transaction as long as it is in the LOW state. Note that it is recommended to avoid stopping the clock during register access. CS# Clock Stopped CK#, CK RWDS Latency Count (1X) High: 2X Latency Count Low: 1X Latency Count RWDS & Data are edge aligned DQ[7:0] CMD [7:0] CMD [7:0] ADR [31:24] ADR [23:16] ADR [15:8] ADR [7:0] DoutA [7:0] Command - Address (Host drives DQ[7:0] and Memory drives RWDS) Figure 16 Datasheet DoutB [7:0] Output Driven DoutA+1 [7:0] DoutB+1 [7:0] Read Data Active clock stop during read transaction (DDR) 29 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Power conservation modes 8.3 Hybrid sleep In the hybrid sleep (HS) state, the current consumption is reduced (IHS). HS state is entered by writing a 1 to CR1[5]. The device reduces power within tHSIN time. The data in memory space and register space is retained during HS state. Bringing CS# LOW will cause the device to exit HS state and set CR1[5] to 0. Also, POR, or a hardware reset will cause the device to exit hybrid sleep state. Note that a POR or a hardware reset disables refresh where the memory core data can potentially get lost. Returning to standby state requires tEXITHS time. Following the exit from HS due to any of these events, the device is in the same state as entering hybrid sleep. CS# CK#, CK RWDS High: 2X Latency Count Low: 1X Latency Count tHSIN DQ[7:0] CMD [7:0] CMD [7:0] ADR [31:24] ADR [23:16] ADR [15:8] ADR [7:0] Command - Address (Host drives DQ[7:0], Memory drives RWDS) Figure 17 RG [15:8] RG [7:0] Write Data CR0 Value Enter Hybrid Sleep tHSIN HS Enter HS transaction[27] CS# tCSHS Figure 18 Exit HS transaction Table 16 Hybrid sleep timing parameters Parameter tEXTHS Description Min Max Unit tHSIN Hybrid sleep CR1[5] = 0 register write to DPD power level – 3 µs tCSHS CS# pulse width to exit HS 60 3000 ns tEXTHS CS# exit hybrid sleep to standby wakeup time – 100 µs Note 27. The initial latency “Low = 1x latency count” is not applicable in dual-die, 512-Mb HYPERRAM™. Write with no latency transaction is used for register writes only. Datasheet 30 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Power conservation modes 8.4 Deep power down In the deep power down (DPD) state, current consumption is driven to the lowest possible level (IDPD). DPD state is entered by writing a 0 to CR0[15]. The device reduces power within tDPDIN time and all refresh operations stop. The data in memory space is lost, (becomes invalid without refresh) during DPD state. Driving CS# LOW then HIGH will cause the device to exit DPD state. Also, POR, or a hardware reset will cause the device to exit DPD state. Returning to standby state requires tEXTDPD time. Returning to standby state following a POR requires tVCS time, as with any other POR. Following the exit from DPD due to any of these events, the device is in the same state as following POR. Note In xSPI (Octal), deep power down transaction or write any register transaction can be used to enter DPD. CS# CK#, CK RWDS High: 2X Latency Count Low: 1X Latency Count tDPDIN DQ[7:0] CMD [7:0] CMD [7:0] ADR [31:24] ADR [23:16] ADR [15:8] ADR [7:0] Command - Address (Host drives DQ[7:0], Memory drives RWDS) Figure 19 RG [15:8] RG [7:0] Write Data CR0 Value Enter Deep Power Down tDPDIN DPD Enter DPD transaction[28] CS# tCSDPD tEXTDPD Figure 20 Exit DPD transaction Table 17 Deep power down timing parameters Parameter Description Min Max Unit tDPDIN Deep power down CR0[15] = 0 register write to DPD power level – 3 µs tCSDPD CS# pulse width to exit DPD 200 3000 ns tEXTDPD CS# exit deep power down to standby wakeup time – 150 µs Note 28. The initial latency “Low = 1x latency count” is not applicable in dual-die, 512-Mb HYPERRAM™. Write with no latency transaction is used for register writes only. Datasheet 31 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Electrical specifications 9 Electrical specifications 9.1 Absolute maximum ratings Storage temperature plastic packages Ambient temperature with power applied Voltage with respect to ground All signals[29] Output short circuit current[30] Voltage on VCC, VCCQ pins relative to VSS Electrostatic discharge voltage: Human body model (JEDEC Std JESD22-A114-B) Charged device model (JEDEC Std JESD22-C101-A) 9.2 –65 °C to +150 °C –65 °C to +135 °C –0.5 V to + (VCC + 0.5 V) 100 mA –0.5 V to +2.5 V 2000 V 500 V Input signal overshoot During DC conditions, input or I/O signals should remain equal to or between VSS and VCC. During voltage transitions, inputs or I/Os may negative overshoot VSS to –1.0 V or positive overshoot to VCC + 1.0 V, for periods up to 20 ns. VSSQ to VCCQ - 1.0V ≤ 20 ns Figure 21 Maximum negative overshoot waveform ≤ 20 ns VCCQ + 1.0V VSSQ to VCCQ Figure 22 Maximum positive overshoot waveform Notes 29. Minimum DC voltage on input or I/O signal is -1.0V. During voltage transitions, input or I/O signals may undershoot VSS to -1.0V for periods of up to 20 ns. See Figure 21. Maximum DC voltage on input or I/O signals is VCC +1.0V. During voltage transitions, input or I/O signals may overshoot to VCC +1.0V for periods up to 20 ns. See Figure 22. 30. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 31. Stresses above those listed under “Absolute maximum ratings” on page 32 may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. Datasheet 32 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Electrical specifications 9.3 Latch-up characteristics 9.3.1 Latch-up specification Table 18 Latch-up specification[32] Description Min Max Input voltage with respect to VSSQ on all input only connections –1.0 VCCQ + 1.0 Input voltage with respect to VSSQ on all I/O connections –1.0 VCCQ + 1.0 VCCQ current –100 +100 9.4 Unit V mA Operating ranges Operating ranges define those limits between which the functionality of the device is guaranteed. 9.4.1 Temperature ranges Table 19 Temperature ranges Parameter Ambient temperature Symbol TA Spec Device Min Max Industrial (I) –40 85 Industrial Plus (V) –40 105 Automotive, AEC-Q100 Grade 3 (A) –40 85 Automotive, AEC-Q100 Grade 2 (B) –40 105 Automotive, AEC-Q100 Grade 1 (M) –40 125 9.4.2 Power supply voltages Table 20 Power supply voltages Description VCC power supply Unit °C Min Max Unit 1.7 2.0 V Note 32. Excludes power supplies VCC/VCCQ. Test conditions: VCC = VCCQ, one connection at a time tested, connections not being tested are at VSS. Datasheet 33 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Electrical specifications 9.5 DC characteristics Table 21 DC Characteristics (CMOS compatible) Parameter Description Test conditions 512 Mb Min Typ[33] Max – 4 ILI2 Input leakage current device reset signal HIGH VIN = VSS to VCC, VCC = VCC max – ILI4 Input leakage current VIN = VSS to VCC, device reset signal LOW[34] VCC = VCC max – – 30 ICC1 VCC active read current operating temperature range – 28 40 ICC2 VCC active write current operating temperature range VCC standby current (–40 °C to +85 °C) ICC4 VCC standby current (–40 °C to +105 °C) CS# = VSS, CK @ 200 MHz, VCC = VCC max Unit µA mA – 32 44 CS# = VCC, VCC = 2.0 V; full array – 2400 CS# = VCC, VCC = 2.0 V; bottom 1/2 array – 1700 CS# = VCC, VCC = 2.0 V; bottom 1/4 array – 1400 CS# = VCC, VCC = 2.0 V; bottom 1/8 array – CS# = VCC, VCC = 2.0 V; top 1/2 array – 1700 CS# = VCC, VCC = 2.0 V; top 1/4 array – 1400 CS# = VCC, VCC = 2.0 V; top 1/8 array – 1200 CS# = VCC, VCC = 2.0 V; full array – 3100 CS# = VCC, VCC = 2.0 V; bottom 1/2 array – 2300 CS# = VCC, VCC = 2.0 V; bottom 1/4 array – 1900 CS# = VCC, VCC = 2.0 V; bottom 1/8 array – CS# = VCC, VCC = 2.0 V; top 1/2 array – 2300 CS# = VCC, VCC = 2.0 V; top 1/4 array – 1900 CS# = VCC, VCC = 2.0 V; top 1/8 array – 1700 940 1200 µA 940 1700 Notes 33. Not 100% tested. 34. RESET# LOW initiates exits from DPD and hybrid sleep state and initiates the draw of ICC5 reset current, making ILI during RESET# LOW insignificant. Datasheet 34 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Electrical specifications Table 21 Parameter ICC4 DC Characteristics (CMOS compatible) (Continued) Description VCC standby current (–40 °C to +125 °C) Test conditions ICC6 Typ[33] Max – 4000 CS# = VCC, VCC = VCC max; bottom 1/2 array – 3100 CS# = VCC, VCC = VCC max; bottom 1/4 array – 2500 CS# = VCC, VCC = VCC max; bottom 1/8 array – CS# = VCC, VCC = VCC max; top 1/2 array – 3100 CS# = VCC, VCC = VCC max; top 1/4 array – 2500 CS# = VCC, VCC = VCC max; top 1/8 array – 2200 940 2200 – – 1.6 – – 2 Reset current (–40 °C to +125 °C) – – 3 Active clock stop current (–40 °C to +85 °C) – Reset current (–40 °C to +105 °C) Active clock stop current (–40 °C to +105 °C) CS# = VCC, RESET# = VSS, VCC = VCC max CS# = VSS, RESET# = VCC, VCC = VCC max Active clock stop current (–40 °C to +125 °C) ICC7 VCC current during power up[34] IDPD[34] Deep power down current (–40 °C to +85 °C) Deep power down current (–40 °C to +105 °C) Hybrid sleep current (–40 °C to +85 °C) – 38 25 – CS# = VCC, VCC = VCC max, VCCQ = VCC CS# = VCC, VCC = VCC max Deep power down current (–40 °C to +125 °C) IHS[34] Min CS# = VCC, VCC = VCC max; full array Reset current (–40 °C to +85 °C) ICC5 512 Mb Unit μA mA 45 60 – – 70 – – 20 – – 24 – – 35 µA CS# = VCC, VCC = VCC max; full Array – CS# = VCC, VCC = VCC max; bottom 1/2 Array – CS# = VCC, VCC = VCC max; bottom 1/4 Array – 2200 280 1600 1200 Notes 33. Not 100% tested. 34. RESET# LOW initiates exits from DPD and hybrid sleep state and initiates the draw of ICC5 reset current, making ILI during RESET# LOW insignificant. Datasheet 35 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Electrical specifications Table 21 Parameter DC Characteristics (CMOS compatible) (Continued) Description Hybrid sleep current (–40 °C to +85 °C) Hybrid sleep current (–40 °C to +105 °C) IHS[34] Hybrid sleep current (–40 °C to +125 °C) Test conditions 512 Mb Min Typ[33] Max CS# = VCC, VCC = VCC max; bottom 1/8 Array – 1000 CS# = VCC, VCC = VCC max; top 1/2 Array – 1600 CS# = VCC, VCC = VCC max; top 1/4 Array – 1200 CS# = VCC, VCC = VCC max; top 1/8 Array – 1000 CS# = VCC, VCC = 2.0 V; full array – 2500 CS# = VCC, VCC = 2.0 V; bottom 1/2 array – 1700 CS# = VCC, VCC = 2.0 V; bottom 1/4 array – 1300 CS# = VCC, VCC = 2.0 V; bottom 1/8 array – 1100 CS# = VCC, VCC = 2.0 V; top 1/2 array – CS# = VCC, VCC = 2.0 V; top 1/4 array – 1300 CS# = VCC, VCC = 2.0 V; top 1/8 array – 1100 CS# = VCC, VCC = 2.0 V; full array – 3000 CS# = VCC, VCC = 2.0 V; bottom 1/2 array – 2300 CS# = VCC, VCC = 2.0 V; bottom 1/4 array – 1800 CS# = VCC, VCC = 2.0 V; bottom 1/8 array – 1500 CS# = VCC, VCC = 2.0 V; top 1/2 array – 2300 CS# = VCC, VCC = 2.0 V; top 1/4 array – 1800 CS# = VCC, VCC = 2.0 V; top 1/8 array – 1500 Unit 1700 280 µA VIL Input low voltage – –0.15 × VCCQ – 0.30 × VCCQ VIH Input high voltage – 0.70 × VCCQ – 1.15 × VCCQ VOL Output low voltage IOL = 100 µA for DQ[7:0] – – 0.20 VOH Output high voltage IOH = 100 µA for DQ[7:0] VCCQ – 0.20 – – V Notes 33. Not 100% tested. 34. RESET# LOW initiates exits from DPD and hybrid sleep state and initiates the draw of ICC5 reset current, making ILI during RESET# LOW insignificant. Datasheet 36 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Electrical specifications 9.5.1 Capacitance Characteristics Table 22 Capacitive characteristics[35-37] Description Parameter 512 Mb Max Input capacitance (CK, CK#, CS#) CI 6 Delta input capacitance (CK, CK#) CID 0.50 Output capacitance (RWDS) CO 6 IO capacitance (DQx) CIO 6 CIOD 0.50 IO capacitance delta (DQx) Table 23 Parameter[38] Unit pF Thermal resistance Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) Test conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 24-ball FBGA Unit package 51 °C/W 8 Notes 35. These values are guaranteed by design and are tested on a sample basis only. 36. Contact capacitance is measured according to JEP147 procedure for measuring capacitance using a vector network analyzer. VCC, VCCQ are applied and all other signals (except the signal under test) floating. DQ’s should be in the high impedance state. 37. Note that the capacitance values for the CK, CK#, RWDS and DQx signals must have similar capacitance values to allow for signal propagation time matching in the system. The capacitance value for CS# is not as critical because there are no critical timings between CS# going active (LOW) and data being presented on the DQs bus. 38. This parameter is guaranteed by characterization; not tested in production. Datasheet 37 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Electrical specifications 9.6 Power-up initialization HYPERRAM™ products include an on-chip voltage sensor used to launch the power-up initialization process. VCC and VCCQ must be applied simultaneously. When the power supply reaches a stable level at or above VCC(min), the device will require tVCS time to complete its self-initialization process. The device must not be selected during power-up. CS# must follow the voltage applied on VCCQ until VCC (min) is reached during power-up, and then CS# must remain high for a further delay of tVCS. A simple pull-up resistor from VCCQ to Chip Select (CS#) can be used to insure safe and proper power-up. If RESET# is LOW during power up, the device delays start of the tVCS period until RESET# is HIGH. The tVCS period is used primarily to perform refresh operations on the DRAM array to initialize it. When initialization is complete, the device is ready for normal operation. Vcc_VccQ VCC Minimum Device Access Allowed tVCS CS# RESET# Figure 23 Power-up with RESET# HIGH Vcc_VccQ VCC Minimum CS# tVCS Device Access Allowed RESET# Figure 24 Power-up with RESET# LOW Table 24 Power-up and reset parameters[39-41] Parameter Description VCC VCC power supply tVCS VCC and VCCQ  minimum and RESET# HIGH to first access Min Max Unit 1.7 2.0 V – 150 µs Notes 39. Bus transactions (read and write) are not allowed during the power-up reset time (tVCS). 40. VCCQ must be the same voltage as VCC. 41. VCC ramp rate may be non-linear. Datasheet 38 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Electrical specifications 9.7 Power down HYPERRAM™ devices are considered to be powered-off when the array power supply (VCC) drops below the VCC Lock-Out voltage (VLKO). During a power supply transition down to the VSS level, VCCQ should remain less than or equal to VCC. At the VLKO level, the HYPERRAM™ device will have lost configuration or array data. VCC must always be greater than or equal to VCCQ (VCC  VCCQ). During power-down or voltage drops below VLKO, the array power supply voltages must also drop below VCC Reset (VRST) for a Power Down period (tPD) for the part to initialize correctly when the power supply again rises to VCC minimum. See Figure 25. If during a voltage drop the VCC stays above VLKO the part will stay initialized and will work correctly when VCC is again above VCC minimum. If VCC does not go below and remain below VRST for greater than tPD, then there is no assurance that the POR process will be performed. In this case, a hardware reset will be required ensure the device is properly initialized. VCC (Max) VCC No Device Access Allowed VCC (Min) tVCS VLKO Device Access Allowed VRST t PD Time Figure 25 Power down or voltage drop The following section describes HYPERRAM™ device dependent aspects of power down specifications. Table 25 Power-down voltage and timing[42] Symbol Parameter Min Max Unit VCC VCC power supply 1.7 2.0 V VLKO VCC lock-out below which re-initialization is required 1.5 – V VRST VCC low Voltage needed to ensure initialization will occur 0.7 – V tPD Duration of VCC  VRST 50 – µs Note 42. VCC ramp rate can be non-linear. Datasheet 39 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Electrical specifications 9.8 Hardware reset The RESET# input provides a hardware method of returning the device to the standby state. During tRPH the device will draw ICC5 current. If RESET# continues to be held LOW beyond tRPH, the device draws CMOS standby current (ICC4). While RESET# is LOW (during tRP), and during tRPH, bus transactions are not allowed. A hardware reset will do the following: • Cause the configuration registers to return to their default values • Halt self-refresh operation while RESET# is LOW - memory array data is considered as invalid • Force the device to exit the Hybrid Sleep state • Force the device to exit the Deep Power Down state After RESET# returns HIGH, the self-refresh operation will resume. Because self-refresh operation is stopped during RESET# LOW, and the self-refresh row counter is reset to its default value, some rows may not be refreshed within the required array refresh interval per Table 14. This may result in the loss of DRAM array data during or immediately following a hardware reset. The host system should assume DRAM array data is lost after a hardware reset and reload any required data. tRP RESET# tRH tRPH CS# Figure 26 Hardware reset timing diagram Table 26 Power-up and reset parameters Parameter Description Min Max tRP RESET# pulse width 200 – tRH Time between RESET# (HIGH) and CS# (LOW) 200 – tRPH RESET# LOW to CS# LOW 400 – Datasheet 40 of 54 Unit ns 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Timing specifications 10 Timing specifications The following section describes HYPERRAM™ device dependent aspects of timing specifications. 10.1 Key to switching waveforms Valid_High_or_Low High_to_Low_Transition Low_to_High_Transition Invalid High_Impedance Figure 27 Key to switching waveforms 10.2 AC test conditions Device Under Test Figure 28 Test setup Table 27 Test specification[43] CL Parameter All speeds Units 15 pF 1.13 V/ns 0.0–VCCQ V Input timing measurement reference levels VCCQ/2 V Output timing measurement reference levels VCCQ/2 V Output load capacitance, CL Minimum input rise and fall slew rates (1.8 V)[44] Input pulse levels VccQ Input VccQ / 2 Measurement Level VccQ / 2 Output Vss Figure 29 Input waveforms and measurement levels[45] Notes 43. Input and output timing is referenced to VCCQ/2 or to the crossing of CK/CK#. 44. All AC timings assume this input slew rate. 45. Input timings for the differential CK/CK# pair are measured from clock crossings. Datasheet 41 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Timing specifications 10.3 CLK characteristics tCK tCKHP tCKHP CK# VIX (Max) VCCQ / 2 VIX (Min) CK Figure 30 Clock characteristics[46] Table 28 Clock Timings[47-49] Parameter Symbol 200 MHz Unit Min Max tCK 5 – ns CK half period - duty cycle tCKHP 0.45 0.55 tCK CK half period at frequency Min = 0.45 tCK Min Max = 0.55 tCK Min tCKHP 2.25 2.75 ns CK period Table 29 Clock AC/DC electrical characteristics[50, 51] Parameter Symbol Min Max Unit –0.3 VCCQ + 0.3 DC input voltage VIN DC input differential voltage VID(DC) VCCQ × 0.4 VCCQ + 0.6 AC input differential voltage VID(AC) VCCQ × 0.6 VCCQ + 0.6 AC differential crossing voltage VIX VCCQ × 0.4 VCCQ × 0.6 V Notes 46. CK# is shown as a dashed waveform. 47. Clock jitter of ±5% is permitted 48. Minimum frequency (maximum tCK) is dependent upon maximum CS# Low time (tCSM), Initial Latency, and Burst Length. 49. CK and CK# input slew rate must be 1 V/ns (2 V/ns if measured differentially). 50. VID is the magnitude of the difference between the input level on CK and the input level on CK#. 51. The value of VIX is expected to equal VCCQ/2 of the transmitting device and must track variations in the DC level of VCCQ. Datasheet 42 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Timing specifications 10.4 AC characteristics 10.4.1 Read transactions Table 30 HYPERRAM™ specific read timing parameters Parameter Symbol Chip select high between transactions tCSHI 200 MHz Min Max 6 – HYPERRAM™ read-write recovery time tRWR 35 – Chip select setup to next CK rising edge tCSS 4 – Data strobe valid tDSV – 5 Input setup tIS 0.5 – Input hold tIH 0.5 – HYPERRAM™ read initial access time tACC 35 – Clock to DQs low Z tDQLZ 0 – CK transition to DQ valid tCKD 1 5 CK transition to DQ invalid tCKDI 0 4.2 tDV[52, 53] 1.45 – CK transition to RWDS valid tCKDS 1 5 RWDS transition to DQ valid tDSS –0.4 +0.4 RWDS transition to DQ invalid tDSH –0.4 +0.4 Chip select hold after CK falling edge tCSH 0 – Chip select inactive to RWDS high-Z tDSZ – 5 Chip select inactive to DQ High-Z tOZ – 5 Refresh time tRFH 35 – tCKDSR 1 5.5 Data valid (tDV min = the lesser of: tCKHP min – tCKD max + tCKDI max) or tCKHP min – tCKD min + tCKDI min) CK transition to RWDS Low @ CA phase @ read Unit ns Notes 52. Refer to Figure 32 for data valid timing. 53. The tDV timing calculation is provided for reference only, not to determine the spec limit. The spec limit is guaranteed by testing. Datasheet 43 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Timing specifications tCSHI CS# tCSS tRWR=Read Write Recovery tCSH Additional latency tACC 4 cycle latency 1 4 cycle latency 2 tCSS CK#, CK tDSV High: 2X Latency Count RWDS tDSZ tCKDS tCKDSR tOZ tDSS CMD [7:0] DQ[7:0] tDQLZ tIH tIS CMD [7:0] ADR [31:24] ADR [23:16] ADR [15:8] ADR [7:0] tDSH Dn A RWDS and Data are edge aligned Command - Address Host drives DQ[7:0] and Memory drives RWDS Figure 31 tCKD Dn+1 A Dn+2 A Dn+3 A Memory drives DQ[7:0] and RWDS Read timing diagram[54] CS# tCKHP tCSHS tCSS CK CK# tDSZ tCKDS tOZ RWDS tDQLZ Dn A DQ[7:0] Figure 32 tCKD tCKD tCKDI tDSS tDSH tDV Dn B Dn+1 A Dn+1 B Data valid timing[55-57] Notes 54. Refer to Figure 32 for data valid timing. 55. tCKD and tCKDI parameters define the beginning and end position of data valid period. 56. tDSS and tDSH define how early or late DQ may transition relative to RWDS. This is a potential skew between the CK to DQ delay tCKD and CK to RWDS delay tCKDS. 57. Since DQ and RWDS are the same output types, the tCKD, tCKDI and tCKDS values track together (vary by the same ratio). Datasheet 44 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Timing specifications 10.4.2 Write transactions Table 31 Write timing parameters Parameter Symbol 200 MHz Min Max Read-write recovery time tRWR 35 – Access time tACC 35 – Refresh time tRFH 35 – Chip select maximum low time (85 °C) tCSM – 4 Chip select maximum low time (105 °C) tCSM – 1 RWDS data mask valid tDMV 0 – Unit ns µs CS# tCSH tRWR=Read Write Recovery Additional Latency tCSS CK#, CK tDSV tDSZ tDMV tIS DQ[7:0] CMD [7:0] tIS tIH 4 cycle latency 1 High: 2X Latency Count RWDS tIS tIH tIH CMD [7:0] ADR [31:24] ADR [23:16] ADR [15:8] ADR [7:0] Dn A CK and Data Are center aligned Command - Address Dn+1 A Dn+2 A Dn+3 A Host drives DQ[7:0] and RWDS Host drives DQ[7:0] and Memory drives RWDS Figure 33 Write timing diagram[58] Note 58. The initial latency “Low = 1x latency count” is not applicable in dual-die, 512-Mb HYPERRAM™. Datasheet 45 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Timing specifications 10.5 Timing reference levels tCK VCCQ CK, CK# VT VSSQ tIS tIH tIS tIH VCCQ VIH(min) VT RWDS VIL(max) VSSQ tIS tIH tIS tIH VCCQ VIH(min) VT DQ[7:0] VIL(max) VSSQ Figure 34 DDR input timing reference levels tSCK VCCQ RWDS VT VSSQ VCCQ tDSS tDSH VOH(min) VT DQ[7:0] VOL(max) VSSQ Figure 35 Datasheet DDR output timing reference levels 46 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Physical interface 11 Physical interface 11.1 FBGA 24-ball 5 x 5 array footprint HYPERRAM™ devices are provided in Fortified Ball Grid Array (FBGA), 1 mm pitch, 24-ball, 5 x 5 ball array footprint, with 6 mm × 8 mm body. 1 5 2 3 4 RFU CS# CK# CK Vss Vcc RFU VssQ RFU RWDS DQ2 RFU VccQ DQ1 DQ0 DQ3 DQ4 DQ7 DQ6 DQ5 VccQ VssQ A RESET# RFU B C D E Figure 36 Datasheet 24-ball FBGA, 6 x 8 mm, 5 x 5 ball footprint, top view 47 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Physical interface 11.2 Physical diagram NOTES: DIMENSIONS SYMBOL MIN. NOM. MAX. 1. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020. 4. "e" REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION. A - - 1.00 A1 0.20 - - D 8.00 BSC E 6.00 BSC D1 4.00 BSC E1 4.00 BSC MD 5 ME 5 N 24 b 0.35 0.40 eE 1.00 BSC eD 1.00 BSC SD 0.00 BSC SE 0.00 BSC DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION. N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME. 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 "SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE 0.45 POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW "SD" OR "SE" = 0. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND "SE" = eE/2. 8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 9. A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 10. JEDEC SPECIFICATION NO. REF: N/A 002-15550 *A Figure 37 Datasheet 24-ball BGA (8.0 mm × 6.0 mm × 1.0 mm) package outline 48 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Ordering information 12 Ordering information 12.1 Ordering part number The ordering part number is formed by a valid combination of the following: S80KS 512 3 GA B H I 02 0 Packing type 0 = Tray 3 = 13” Tape and Reel Model number (additional ordering options) 02 = Standard 6 × 8 × 1.0 mm package (VAA024) Temperature range / grade I = Industrial (–40 °C to + 85 °C) A = (–40 °C to + 85 °C) B = (–40 °C to + 105 °C) M = Automotive, AEC-Q100 Grade 1 (–40 °C to + 125 °C) Package materials H = Low-Halogen, Pb-free Package type B = 24-ball FBGA, 1.00 mm pitch (5x5 ball footprint) Speed GA = 200 MHz Device technology 2 = HYPERBUS™ 3 = Octal xSPI 4 = HYPERBUS™ Extended-IO Density 512 = 512 Mb Device family S80KS - Infineon® Memory 1.8 V-only, HYPERRAM™ Self-refresh DRAM Datasheet 49 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Ordering information 12.2 Valid combinations The Recommended Combinations table lists configurations planned to be available in volume. Table 32 will be updated as new combinations are released. Contact your local sales representative to confirm availability of specific combinations and to check on newly released combinations. Table 32 Device family Valid combinations - standard Density Technology Speed Package, material, and temperature Model number Packing type Ordering part number Package marking S80KS 512 3 GA BHI 02 0 S80KS5123GABHI020 8KS5123GAHI02 S80KS 512 3 GA BHI 02 3 S80KS5123GABHI023 8KS5123GAHI02 S80KS 512 3 GA BHV 02 0 S80KS5123GABHV020 8KS5123GAHV02 S80KS 512 3 GA BHV 02 3 S80KS5123GABHV023 8KS5123GAHV02 12.3 Valid combinations - Automotive grade / AEC-Q100 Table 33 list configurations that are Automotive Grade / AEC-Q100 qualified and are planned to be available in volume. The table will be updated as new combinations are released. Contact your local sales representative to confirm availability of specific combinations and to check on newly released combinations. Production part approval process (PPAP) support is only provided for AEC-Q100 grade products. Products to be used in end-use applications that require ISO/TS-16949 compliance must be AEC-Q100 grade products in combination with PPAP. Non-AEC-Q100 grade products are not manufactured or documented in full compliance with ISO/TS-16949 requirements. AEC-Q100 grade products are also offered without PPAP support for end-use applications that do not require ISO/TS-16949 compliance. Table 33 Device family S80KS Valid combinations - Automotive grade / AEC-Q100 Density Technology 512 3 Speed Package, material, and temperature Model number Packing type Ordering part number Package marking GA BHA 02 0 S80KS5123GABHA020 8KS5123GAHA02 S80KS 512 3 GA BHA 02 3 S80KS5123GABHA023 8KS5123GAHA02 S80KS 512 3 GA BHB 02 0 S80KS5123GABHB020 8KS5123GAHB02 S80KS 512 3 GA BHB 02 3 S80KS5123GABHB023 8KS5123GAHB02 S80KS 512 3 GA BHM 02 0 S80KS5123GABHM020 8KS5123GAHM02 S80KS 512 3 GA BHM 02 3 S80KS5123GABHM023 8KS5123GAHM02 Datasheet 50 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Acronyms 13 Acronyms Table 34 Acronyms used in this document Acronym Description CMOS complementary metal oxide semiconductor DCARS DDR Center-Aligned Read Strobe DDR double data rate DPD deep power down DRAM dynamic RAM HS hybrid sleep MSb most significant bit POR power-on reset PSRAM pseudo static RAM PVT process, voltage, and temperature RWDS read-write data strobe SPI serial peripheral interface xSPI expanded serial peripheral interface Datasheet 51 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Document conventions 14 Document conventions 14.1 Units of measure Table 35 Units of measure Symbol Unit of Measure °C degree Celsius MHz megahertz µA microampere µs microsecond mA milliampere mm millimeter ns nanosecond  ohm % percent pF picofarad V volt W watt Datasheet 52 of 54 002-31340 Rev. *C 2021-09-27 512 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Revision history Revision histor y Document version Date of release *C 2021-09-27 Datasheet Description of changes Publish to web. 53 of 54 002-31340 Rev. *C 2021-09-27 Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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