SDT08S60

SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery IF 8 A PG-TO220-2-2. • No temperature influence on the switching behavior • No forward recovery Type SDT08S60 Package PG-TO220-2-2. Ordering Code Q67040S4647 Marking Pin 1 Pin 2 D08S60 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous forward current, TC=100°C IF RMS forward current, f=50Hz IFRMS Surge non repetitive forward current, sine halfwave IFSM Value 8 Unit A 11.3 26 TC=25°C, tp=10ms IFRM 32 IFMAX 80 i 2t value, TC=25°C, tp=10ms ∫i2dt 3.4 A²s Repetitive peak reverse voltage VRRM 600 V Surge peak reverse voltage VRSM 600 Power dissipation, TC=25°C Ptot 65 W Operating and storage temperature Tj , Tstg -55... +175 °C Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp=10µs, TC=25°C Rev. 2.2 Page 1 2008-06-02 SDT08S60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.3 Thermal resistance, junction - ambient, leaded RthJA - - 62 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Static Characteristics Diode forward voltage V VF IF=8A, Tj=25°C - 1.5 1.7 IF=8A, Tj=150°C - 1.7 2.1 Reverse current µA IR V R=600V, T j=25°C - 28 300 V R=600V, T j=150°C - 70 1500 Rev. 2.2 Page 2 2008-06-02 SDT08S60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qc - 24 - nC trr - n.a - ns AC Characteristics Total capacitive charge V R=400V, IF=8A, diF/dt=200A/µs, T j=150°C Switching time V R=400V, IF=8A, diF/dt=200A/µs, T j=150°C Total capacitance C pF V R=0V, T C=25°C, f=1MHz - 280 - V R=300V, T C=25°C, f=1MHz - 26 - V R=600V, T C=25°C, f=1MHz - 18 - Rev. 2.2 Page 3 2008-06-02 SDT08S60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f (TC) parameter: Tj≤175 °C 70 SDT08S60 9 W A 60 55 7 6 45 IF Ptot 50 40 5 35 4 30 25 3 20 2 15 10 1 5 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 TC °C 180 TC 3 Typ. forward characteristic 4 Typ. forward power dissipation vs. IF = f (VF) average forward current parameter: Tj , tp = 350 µs PF(AV)=f(IF) TC=100°C, d = tp/T 36 16 IF 12 W 150°C 125°C 100°C 25°C -40°C 28 PF(AV) A 10 d=1 d=0,5 d=0,2 d=0,1 24 20 8 16 6 12 4 8 2 0 0 Rev. 2.2 4 0.25 0.5 0.75 1 1.25 1.5 1.75 2 V 2.5 VF Page 4 0 0 2 4 6 8 10 12 16 A IF(AV) 2008-06-02 SDT08S60 5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance I R=f(VR) ZthJC = f (t p) parameter : D = t p/T 2 10 10 1 µA 10 0 10 1 0 10 150°C 125°C 100°C 25°C ZthJC IR SDT08S60 K/W 10 -1 10 -2 10 D = 0.50 -1 0.20 10 0.10 -3 0.05 10 single pulse -2 0.02 10 -4 10 -3 100 150 200 250 300 350 400 450 500 10 -5 -7 10 V 600 VR 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy C= f(V R) EC=f(V R) parameter: TC = 25 °C, f = 1 MHz 5 300 pF µJ 4 240 220 3.5 EC C 200 180 160 3 2.5 140 2 120 100 1.5 80 1 60 40 0.5 20 0 0 10 Rev. 2.2 10 1 10 2 3 10 V VR Page 5 0 0 100 200 300 400 V 600 VR 2008-06-02 SDT08S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 35 nC Qc 25 20 IF*2 IF IF*0.5 15 10 5 0 0 100 200 300 400 500 600 700 800A/µs 1000 diF /dt Rev. 2.2 Page 6 2008-06-02 SDT08S60 PG-TO-220-2-2 Rev. 2.2 Page 7 2008-06-02 SDT08S60 Rev. 2.2 Page 8 2008-06-02