SGB15N60HSATMA1

SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • PG-TO-263-3-2 (D²-PAK) (TO-263AB) High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC Eoff Tj Marking Package 600V 15A 200µJ 150°C G15N60HS PG-TO-263-3-2 Parameter Symbol Value Collector-emitter voltage VCE DC collector current IC SGB15N60HS Maximum Ratings Unit 600 V A TC = 25°C 27 TC = 100°C 15 Pulsed collector current, tp limited by Tjmax ICpul s 60 Turn off safe operating area - 60 VGE ±20 ±30 V tSC 10 µs Ptot 138 W -55...+150 °C VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage static transient (tp