SGP20N60HS
SGW20N60HS
High Speed IGBT in NPT-technology
C
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
G
E
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
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PG-TO-220-3-1
PG-TO-247-3
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
VCE
IC
Eoff
Tj
Marking
SGP20N60HS
600V
20
240µJ
150°C
G20N60HS
PG-TO-220-3-1
SGW20N60HS
600V
20
240µJ
150°C
G20N60HS
PG-TO-247-3
Type
Package
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
DC collector current
IC
Value
Unit
600
V
A
TC = 25°C
36
TC = 100°C
20
Pulsed collector current, tp limited by Tjmax
ICpuls
80
Turn off safe operating area
-
80
Avalanche energy single pulse
IC = 20A, VCC=50V, RGE=25Ω
start TJ=25°C
EAS
115
mJ
Gate-emitter voltage static
transient (tp
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