SGW15N120

SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G PG-TO-220-3-1 E PG-TO-247-3 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE IC Eoff Tj Marking SGP15N120 1200V 15A 1.5mJ 150°C GP15N120 SGW15N120 1200V 15A 1.5mJ 150°C Type Package PG-TO-220-3-1 SGW15N120 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A TC = 25°C 30 TC = 100°C 15 Pulsed collector current, tp limited by Tjmax ICpuls 52 Turn off safe operating area - 52 Gate-emitter voltage VGE ±20 V Avalanche energy, single pulse EAS 85 mJ tSC 10 µs Ptot 198 W -55...+150 °C VCE ≤ 1200V, Tj ≤ 150°C IC = 15A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time2 VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 1 2 260 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. Power Semiconductors 1 Rev. 2.6 Nov. 09 SGP15N120 SGW15N120 Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.63 K/W Characteristic IGBT thermal resistance, RthJC junction – case Thermal resistance, RthJA junction – ambient PG-TO-220-3-1 62 PG-TO-247-3 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max. 1200 - - 2.5 3.1 3.6 T j = 15 0° C - 3.7 4.3 3 4 5 T j = 25° C - - 200 T j = 15 0° C - - 800 - - 100 nA 11 - S pF Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 10 00 µA Collector-emitter saturation voltage VCE(sat) V V G E = 15V, I C = 15A T j = 25° C Gate-emitter threshold voltage VGE(th) I C = 60 0µA, V C E =V G E Zero gate voltage collector current ICES V C E =1200V,V G E =0V µA Gate-emitter leakage current IGES V C E =0V,V GE =20V Transconductance gfs V C E = 20V, I C = 15A Input capacitance Ciss V C E = 25V, - 1250 1500 Output capacitance Coss V G E = 0V, - 100 120 Reverse transfer capacitance Crss f= 1 M Hz - 65 80 Gate charge QGate V C C = 9 60V, I C = 15A - 130 175 nC - 7 - nH - A Dynamic Characteristic V G E = 1 5V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current 2) 2) PG -TO -220-3-1 PG -TO -247-3 IC(SC) V G E = 1 5V,t S C ≤5µs 100V ≤ V C C ≤1200V, T j ≤ 150° C 13 - 145 Allowed number of short circuits: 1s. Power Semiconductors 2 Rev. 2.6 Nov. 09 SGP15N120 SGW15N120 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 18 24 - 23 30 - 580 750 - 22 29 - 1.1 1.5 - 0.8 1.1 - 1.9 2.6 Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25° C, V C C = 8 00V, I C = 15A, V G E = 1 5V/ 0 V, R G = 3 3Ω , L σ 1 ) = 180nH, 1) C σ = 4 0 pF Energy losses include “tail” and diode reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. - 38 46 - 30 36 - 652 780 - 31 37 - 1.9 2.3 - 1.5 2.0 - 3.4 4.3 Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) T j = 15 0° C V C C = 8 00V, I C = 15A, V G E = 1 5V/ 0 V, R G = 3 3Ω , L σ 1 ) = 180nH, 1) C σ = 4 0 pF Energy losses include “tail” and diode reverse recovery. ns mJ Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E. Power Semiconductors 3 Rev. 2.6 Nov. 09 SGP15N120 SGW15N120 70A 100A Ic tp=2µs 15µs 50A 40A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 60A TC=80°C 30A TC=110°C 20A 10A 50µs 10A 200µs 1A 1ms Ic DC 0A 10Hz 100Hz 1kHz 10kHz 0.1A 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 33Ω) 1V 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 35A 200W 30A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 175W 150W 125W 100W 75W 50W 20A 15A 10A 5A 25W 0W 25°C 25A 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.6 Nov. 09 50A 50A 40A 40A V G E =17V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT SGP15N120 SGW15N120 15V 30A 13V 11V 9V 20A 7V 10A 0A 0V 1V 2V 3V 4V 5V 6V 30A TJ=+150°C TJ=+25°C TJ=-40°C 10A 7V 9V 11V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE IC, COLLECTOR CURRENT 40A 5V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) Power Semiconductors 13V 11V 9V 20A 7V 10A 1V 2V 3V 4V 5V 6V 7V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) 50A 0A 3V 15V 30A 0A 0V 7V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) 20A V G E =17V 6V 5V IC=30A 4V IC=15A 3V IC=7.5A 2V 1V 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.6 Nov. 09 SGP15N120 SGW15N120 1000ns 1000ns td(off) t, SWITCHING TIMES t, SWITCHING TIMES td(off) 100ns td(on) tf 100ns td(on) tf tr tr 10ns 0Ω 10ns 0A 10A 20A 30A 40A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 33Ω, dynamic test circuit in Fig.E ) VGE(th), GATE-EMITTER THRESHOLD VOLTAGE td(off) t, SWITCHING TIMES 50Ω 6V 1000ns 100ns td(on) tr tf 10ns -50°C 25Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 15A, dynamic test circuit in Fig.E ) 0°C 50°C 100°C max. 4V typ. 3V min. 2V 1V 0V -50°C 150°C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 15A, RG = 33Ω, dynamic test circuit in Fig.E ) Power Semiconductors 5V 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 Rev. 2.6 Nov. 09 SGP15N120 SGW15N120 14mJ *) Eon and Ets include losses due to diode recovery. Ets* E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 12mJ 5mJ *) Eon and Ets include losses due to diode recovery. 10mJ 8mJ Eon* 6mJ 4mJ Eoff 2mJ 0mJ 0A 10A 20A 30A 40A 3mJ Eon* 2mJ Eoff 1mJ 0mJ 0Ω 50A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 33Ω, dynamic test circuit in Fig.E ) Ets* 4mJ 25Ω 50Ω 75Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 15A, dynamic test circuit in Fig.E ) 4mJ 3mJ Eon* 2mJ Eoff 1mJ 0mJ -50°C 0°C 50°C 100°C D=0.5 Ets* ZthJC, TRANSIENT THERMAL IMPEDANCE E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. 150°C 10 K/W 0.1 0.05 R,(K/W) 0.09751 0.29508 0.13241 0.10485 0.02 -2 10 K/W 0.01 τ, (s) 0.67774 0.11191 0.00656 0.00069 R1 -3 10 K/W 1µs single pulse 10µs 100µs R2 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 1ms 10ms 100ms 1s tp, PULSE WIDTH Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 15A, RG = 33Ω, dynamic test circuit in Fig.E ) Power Semiconductors 0.2 -1 Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Rev. 2.6 Nov. 09 SGP15N120 SGW15N120 20V Ciss 15V C, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 1nF UCE=960V 10V 5V 100pF 0V 0nC Coss Crss 50nC 100nC 150nC 0V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 15A) 10V 20V 30V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) IC(sc), SHORT CIRCUIT COLLECTOR CURRENT tsc, SHORT CIRCUIT WITHSTAND TIME 30µs 20µs 10µs 0µs 10V 11V 12V 13V 14V 250A 200A 150A 100A 50A 0A 10V 15V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25°C) Power Semiconductors 300A 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C) 8 Rev. 2.6 Nov. 09 SGP15N120 SGW15N120 PG-TO220-3-1 Power Semiconductors 9 Rev. 2.6 Nov. 09 SGP15N120 SGW15N120 Power Semiconductors 10 Rev. 2.6 Nov. 09 SGP15N120 SGW15N120 i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tr r tS QS Ir r m tF 10% Ir r m QF dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Power Semiconductors Figure E. Dynamic test circuit Leakage inductance Lσ =180nH, and stray capacity Cσ =40pF. 11 Rev. 2.6 Nov. 09 SGP15N120 SGW15N120 Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 11/19/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.6 Nov. 09