SGW30N60HS

SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • PG-TO-220-3-1 PG-TO-247-3 High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type Tj VCE IC Eoff) SGP30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1 SGW30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-247-3 Marking Package Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current IC Value 600 Unit V A TC = 25°C 41 TC = 100°C 30 Pulsed collector current, tp limited by Tjmax ICpuls 112 Turn off safe operating area - 112 Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C EAS 165 mJ Gate-emitter voltage static transient (tp