SIDC24D30SIC3
Silicon Carbide Schottky Diode
FEATURES:
Applications:
•
•
•
•
•
•
Revolutionary semiconductor material Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on the switching
behavior
No forward recovery
Chip Type
VBR
SIDC24D30SIC3
300V
IF
10A
A
SMPS, snubber, secondary side
rectification
Die Size
Package
1.706 x 1.38 mm2
sawn on foil
C
Ordering Code
Q67050-A4163A103
MECHANICAL PARAMETER:
Raster size
1.706x 1.38
Anode pad size
1.405 x 1.08
Area total / active
2.354 / 1.548
mm
Thickness
355
µm
Wafer size
75
mm
Flat position
0
deg
mm
Max. possible chips per wafer
1649 pcs
Passivation frontside
Photoimide
Anode metalization
3200 nm Al
Cathode metalization
Die bond
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Wire bond
Al, ≤ 350µm
Reject Ink Dot Size
∅ ≥ 0.3 mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
2
SIDC24D30SIC3
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
300
Surge peak reverse voltage
V RSM
300
IF
10
Continuous forward current limited by
Tjmax
Single pulse forward current
Condition
Value
I FSM
TC =25° C, tP =10 ms sinusoidal
36
I FRM
TC = 100° C, T j = 1 5 0 ° C,
D=0.1
45
Non repetitive peak forward current
I FMAX
TC =25° C, tp=10µs
100
Operating junction and storage
temperature
Tj , Ts t g
(depending on wire bond configuration)
Maximum repetitive forward current
limited by Tjmax
Unit
V
A
-55...+175
°C
Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified
Parameter
Reverse leakage current
Forward voltage drop
Symbol
Conditions
Value
min.
Typ.
max.
Unit
IR
V R =300V
Tj= 2 5 ° C
15
200
µA
VF
I F= 1 0 A
Tj= 2 5 ° C
1.5
1.7
V
Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component
Parameter
Total capacitive charge
Symbol
QC
Conditions
Value
min.
Typ.
max.
Unit
I F =10A
di/dt=200A/µs
Tj = 150 °C
23
nC
Tj = 150 °C
n.a.
ns
V R = 1V
600
V R =150V
55
V R =300V
40
V R =200V
Switching time
t rr
I F =10A
di/dt=200A/µs
VR = 2 0 0 V
Total capacitance
C
I F =10A
di/dt=200A/µs
T j =25°C
f=1MHz
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
pF
SIDC24D30SIC3
CHIP DRAWING:
1705
1380
1080
40
R1
1405
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
SIDC24D30SIC3
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES
SDP10S30
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 München
© Infineon Technologies AG 2000
All Rights Reserved.
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characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
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address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
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