SIDC81D60E6

Preliminary SIDC81D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC81D60E6 600V 200A A This chip is used for: • EUPEC power modules and discrete devices C Applications: • SMPS, resonant applications, drives Die Size Package 9 x 9 mm2 sawn on foil Ordering Code Q67050-A4012A001 MECHANICAL PARAMETER: Raster size Area total / active Anode pad size 9x9 81 / 69.39 mm 2 8.28 x 8.28 Thickness 70 µm Wafer size 150 mm Flat position 180 deg Max. possible chips per wafer 169 pcs Passivation frontside Photoimide Anode metallisation 3200 nm AlSiCu Cathode metallisation Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 4203M, Edition 1, 8.01.2002 Preliminary SIDC81D60E6 Maximum Ratings Parameter Symbol Repetitive peak reverse voltage VRRM 600 IF 200 Continuous forward current limited by Tjmax Single pulse forward current (depending on wire bond configuration) Maximum repetitive forward current limited by Tjmax Operating junction and storage temperature Condition I FSM Value tP = 10 ms sinusoidal V A tbd I FRM Unit 600 Tj , Ts t g -55...+150 °C Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Parameter Symbol Reverse leakage current IR Cathode-Anode breakdown Voltage V Br Forward voltage drop VF Conditions V R =600V Tj= 2 5 ° C I R= 4 m A Tj= 2 5 ° C I F =200A Tj= 2 5 ° C Value min. Typ. max. 27 600 Unit µA V 1.25 V Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component Parameter Reverse recovery time Symbol t rr1 t rr2 Conditions I F= 2 0 0 A di/dt=4000A/ µs V R =300V Value min. Typ. Tj = 2 5 ° C ns Tj = 1 2 5 ° C I F= 2 0 0 A Tj = 2 5 ° C IRRM2 di/dt=4000A/ µs VR = 3 0 0 V Tj = 1 2 5 ° C 300 Qrr1 I F= 2 0 0 A Tj= 2 5 ° C 13.1 Qrr2 di/dt=4000A/ µs VR = 3 0 0 V Tj= 1 2 5 ° C 21.8 Peak rate of fall of reverse di r r 1 /dt recovery current di r r 2 /dt I F= 2 0 0 A T j = 25 ° C tbd Softness S1 I F= 2 0 0 A S2 di/dt=4000A/ µs VR = 3 0 0 V Reverse recovery charge di/dt=4000A/ µs VR = 3 0 0 V 247.7 A µC Tj= 1 2 5 ° C Tj= 2 5 ° C Tj= 1 2 5 ° C Edited by INFINEON Technologies AI PS DD HV3, L 4203M, Edition 1, 8.01.2002 Unit tbd IRRM1 Peak recovery current max. A / µs tbd 1 Preliminary SIDC81D60E6 CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 4203M, Edition 1, 8.01.2002 Preliminary SIDC81D60E6 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet INFINEON TECHNOLOGIES / EUPEC tbd Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strasse 53 D-81541 München © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 4203M, Edition 1, 8.01.2002