SIGC158T120R3LEX1SA2

IG BT TRENCHSTOPTM IGBT3 Chip SIGC158T120R3LE Dat a She et Indust rial Po wer C o ntrol SIGC158T120R3LE Table of Contents Features and Applications ............................................................................................................................... 3 Mechanical Parameters .................................................................................................................................... 3 Maximum Ratings ............................................................................................................................................. 4 Static and Electrical Characteristics .............................................................................................................. 4 Further Electrical Characteristics ................................................................................................................... 5 Chip Drawing ..................................................................................................................................................... 6 Revision History ............................................................................................................................................... 7 Relevant Application Notes ............................................................................................................................. 7 Legal Disclaimer ............................................................................................................................................... 8 L7698N, L7698U, L7698F 2 Rev. 2.3, 19.08.2015 SIGC158T120R3LE TRENCHSTOPTM IGBT3 Chip Features:  1200V trench & field stop technology  Low turn-off losses  Short tail current  Positive temperature coefficient  Easy paralleling Recommended for:  Power modules Applications:  Drives Chip Type VCE ICn 1 Die Size Package SIGC158T120R3LE 1200V 150A 12.56mm x 12.56mm Sawn on foil Mechanical Parameters Die size 12.56 x 12.56 Emitter pad size See chip drawing mm Gate pad size 2 1.320 x 0.821 Area total 157.75 Thickness 120 µm Wafer size 200 mm Maximum possible chips per wafer 156 Passivation frontside Photoimide Pad metal 3200nm AlSiCu Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during production process Backside metal Die bond Electrically conductive epoxy glue and soft solder Wire bond Al, ≤500µm  0.65mm; max. 1.2mm Reject ink dot size for original and sealed MBB bags Ambient atmosphere air, temperature 17°C – 25°C, 99% Nitrogen or inert gas, humidity