SKP04N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
C
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
PG-TO-220-3-1
- parallel switching capability
(TO-220AB)
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
Pb-free lead plating; RoHS compliant
1
Qualified according to JEDEC for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SKP04N60
G
VCE
IC
VCE(sat)
Tj
Marking
Package
600V
4A
2.3V
150C
K04N60
PG-TO-220-3-1
E
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
DC collector current
IC
Value
600
Unit
V
A
TC = 25C
9.4
TC = 100C
4.9
Pulsed collector current, tp limited by Tjmax
ICpul s
19
Turn off safe operating area
-
19
VCE 600V, Tj 150C
IF
Diode forward current
TC = 25C
10
TC = 100C
4
Diode pulsed current, tp limited by Tjmax
IFpul s
19
Gate-emitter voltage
VGE
20
V
tSC
10
s
Ptot
50
W
-55...+150
C
260
°C
2
Short circuit withstand time
VGE = 15V, VCC 600V, Tj 150C
Power dissipation
TC = 25C
Operating junction and storage temperature
Tj , Tstg
Soldering temperature
Ts
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: 1s.
1
Rev. 2.3
12.06.2013
SKP04N60
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
2.5
K/W
RthJCD
4.5
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
RthJA
Thermal resistance,
62
PG-TO-220-3-1
junction – ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
1.7
2.0
2.4
-
2.3
2.8
1.2
1.4
1.8
T j =1 5 0 C
-
1.25
1.65
3
4
5
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 5 00 A
Collector-emitter saturation voltage
VCE(sat)
V G E = 15 V , I C = 4 A
T j =2 5 C
T j =1 5 0 C
VF
Diode forward voltage
V
V G E = 0V , I F = 4 A
T j =2 5 C
Gate-emitter threshold voltage
VGE(th)
I C = 20 0 A , V C E = V G E
Zero gate voltage collector current
ICES
V C E = 60 0 V, V G E = 0 V
A
T j =2 5 C
-
-
20
T j =1 5 0 C
-
-
500
-
-
100
nA
3.1
-
S
pF
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
Transconductance
gfs
V C E = 20 V , I C = 4 A
Input capacitance
Ciss
V C E = 25 V ,
-
264
317
Output capacitance
Coss
V G E = 0V ,
-
29
35
Reverse transfer capacitance
Crss
f= 1 MH z
-
17
20
Gate charge
QGate
V C C = 48 0 V, I C =4 A
-
24
31
nC
-
7
-
nH
-
40
-
A
Dynamic Characteristic
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
2)
IC(SC)
V G E = 15 V ,t S C 10 s
V C C 6 0 0 V,
T j 1 5 0 C
Allowed number of short circuits: 1s.
2
Rev. 2.3
12.06.2013
SKP04N60
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
22
26
-
15
18
-
237
284
-
70
84
-
0.070
0.081
-
0.061
0.079
-
0.131
0.160
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =2 5 C ,
V C C = 40 0 V, I C = 4 A,
V G E = 0/ 15 V ,
R G =67 ,
1)
L = 18 0 nH ,
1)
C = 18 0 pF
Energy losses include
“tail” and diode
reverse recovery.
trr
T j =2 5 C ,
-
180
-
tS
V R = 2 00 V , I F = 4 A,
-
15
-
tF
d i F / d t =2 0 0 A/ s
-
165
-
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
ns
Diode reverse recovery charge
Qrr
-
130
-
nC
Diode peak reverse recovery current
Irrm
-
2.5
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
180
-
A/s
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
22
26
-
16
19
-
264
317
-
104
125
-
0.115
0.132
-
0.111
0.144
-
0.226
0.277
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =1 5 0 C
V C C = 40 0 V, I C = 4 A,
V G E = 0/ 15 V ,
R G = 67 ,
1)
L = 18 0 nH ,
1)
C = 18 0 pF
Energy losses include
“tail” and diode
reverse recovery.
trr
T j =1 5 0 C
-
230
-
tS
V R = 2 00 V , I F = 4 A,
-
23
-
tF
d i F / d t =2 0 0 A/ s
-
227
-
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
ns
Diode reverse recovery charge
Qrr
-
300
-
nC
Diode peak reverse recovery current
Irrm
-
4
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
200
-
A/s
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
3
Rev. 2.3
12.06.2013
SKP04N60
Ic
t p =2 s
10A
15 s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
20A
T C =80°C
10A
T C =110°C
50 s
1A
200 s
1ms
0.1A
DC
Ic
0A
10Hz
0.01A
100Hz
1kHz
10kHz
1V
100kHz
60W
12A
50W
10A
40W
30W
20W
10W
0W
25°C
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 150C)
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 67)
10V
8A
6A
4A
2A
50°C
75°C
100°C
0A
25°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 150C)
50°C
75°C
100°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150C)
4
Rev. 2.3
12.06.2013
15A
15A
12A
12A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
SKP04N60
VGE=20V
9A
15V
13V
11V
9V
7V
5V
6A
3A
0A
0V
1V
2V
3V
4V
6A
0A
0V
5V
15V
13V
11V
9V
7V
5V
Tj=+25°C
12A
-55°C
+150°C
10A
8A
6A
4A
2A
2V
4V
6V
8V
10V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
14A
IC, COLLECTOR CURRENT
9A
3A
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25C)
0A
0V
VGE=20V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
IC = 8A
3.0V
IC = 4A
2.5V
2.0V
1.5V
1.0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2.3
12.06.2013
SKP04N60
td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
t d(off)
tf
100ns
t d(on)
100ns
tf
t d(on)
tr
10ns
0A
2A
4A
6A
8A
tr
10ns
0
10A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, RG = 67,
Dynamic test circuit in Figure E)
50
100
150
200
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, IC = 4A,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.5V
t, SWITCHING TIMES
td(off)
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
5.0V
4.5V
4.0V
max.
3.5V
typ.
3.0V
2.5V
min.
2.0V
150°C
-50°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 4A, RG = 67,
Dynamic test circuit in Figure E)
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.2mA)
6
Rev. 2.3
12.06.2013
SKP04N60
0.6mJ
0.4mJ
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
0.5mJ
E ts *
0.4mJ
0.3mJ
E on *
0.2mJ
E off
0.1mJ
0.0mJ
0A
2A
4A
6A
8A
0.3mJ
E ts *
0.2mJ
E off
0.1mJ
E on *
0.0mJ
0
10A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, RG = 67,
Dynamic test circuit in Figure E)
50
100
150
200
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, IC = 4A,
Dynamic test circuit in Figure E)
0.3mJ
D=0.5
0
ZthJC, TRANSIENT THERMAL IMPEDANCE
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery.
0.2mJ
E ts *
0.1mJ
E on *
E off
10 K/W
0.2
0.1
0.05
-1
10 K/W 0.02
R,(K/W)
0.815
0.698
0.941
0.046
0.01
-2
10 K/W
R1
single pulse
0.0mJ
0°C
-3
50°C
100°C
10 K/W
1µs
150°C
10µs 100µs
, (s)
0.0407
5.24*10-3
4.97*10-4
4.31*10-5
R2
C 1 = 1 / R 1 C 2 = 2 /R 2
1m s
10m s 100m s
1s
tp, PULSE WIDTH
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 4A, RG = 67,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
7
Rev. 2.3
12.06.2013
SKP04N60
25V
C iss
15V
120V
C, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
20V
480V
10V
100pF
C oss
5V
C rss
10pF
0V
0nC
10nC
20nC
30nC
0V
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 4A)
30V
70A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
tsc, SHORT CIRCUIT WITHSTAND TIME
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
25 s
20 s
15 s
10 s
5 s
0 s
10V
10V
11V
12V
13V
14V
60A
50A
40A
30A
20A
10A
0A
10V
15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25C)
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE 600V, Tj = 150C)
8
Rev. 2.3
12.06.2013
SKP04N60
500ns
560nC
trr, REVERSE RECOVERY TIME
IF = 8A
300ns
200ns
IF = 4A
IF = 2A
100ns
0ns
40A/s
120A/s
200A/s
280A/s
Qrr, REVERSE RECOVERY CHARGE
480nC
400ns
d i F / d t, DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
IF = 8A
IF = 4A
IF = 2A
2A
120A/s
200A/s
280A/s
OF REVERSE RECOVERY CURRENT
d i r r /d t, DIODE PEAK RATE OF FALL
Irr, REVERSE RECOVERY CURRENT
240nC
IF = 2A
160nC
80nC
120A/s
200A/s
280A/s
360A/s
400A/s
6A
0A
40A/s
IF = 4A
d i F / d t, DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
8A
4A
320nC
0nC
40A/s
360A/s
IF = 8A
400nC
320A/s
240A/s
160A/s
80A/s
0A/s
40A/s
360A/s
d i F / d t, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
120A/s
200A/s
280A/s
360A/s
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
9
Rev. 2.3
12.06.2013
SKP04N60
8A
2.0V
I F = 8A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
6A
4A
150°C
100°C
25°C
2A
I F = 4A
1.5V
-55°C
0A
0.0V
0.5V
1.0V
1.5V
1.0V
2.0V
ZthJCD, TRANSIENT THERMAL IMPEDANCE
VF, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
-40°C
0°C
40°C
80°C
120°C
Tj, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as
a function of junction temperature
D=0.5
0
10 K/W
0.2
0.1
0.05
R,(K/W)
0.128
0.387
0.346
1.360
2.280
0.02
-1
10 K/W
0.01
single pulse
R2
C 1 = 1 / R 1 C 2 = 2 /R 2
-2
10 K/W
1µs
R1
, (s)
0.085
7.30*10-3
4.69*10-3
7.34*10-4
5.96*10-5
10µs
100µs
1ms
10ms 100ms
1s
tp, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)
10
Rev. 2.3
12.06.2013
SKP04N60
11
Rev. 2.3
12.06.2013
SKP04N60
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
1
2
r1
r2
n
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L =180nH
an d Stray capacity C =180pF.
Figure B. Definition of switching losses
12
Rev. 2.3
12.06.2013
SKP04N60
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
13
Rev. 2.3
12.06.2013