SKW07N120

SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C  Lower Eoff compared to previous generation  Short circuit withstand time – 10 s  Designed for: - Motor controls - Inverter - SMPS  NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1  Qualified according to JEDEC for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW07N120 G E PG-TO-247-3 VCE IC Eoff Tj Marking Package 1200V 8A 0.7mJ 150C K07N120 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A TC = 25C 16.5 TC = 100C 7.9 Pulsed collector current, tp limited by Tjmax ICpul s 27 Turn off safe operating area - 27 VCE  1200V, Tj  150C IF Diode forward current TC = 25C 13 TC = 100C 7 Diode pulsed current, tp limited by Tjmax IFpul s 27 Gate-emitter voltage VGE 20 V tSC 10 s Ptot 125 W -55...+150 C 2 Short circuit withstand time VGE = 15V, 100V  VCC  1200V, Tj  150C Power dissipation TC = 25C Operating junction and storage temperature Tj , Tstg Soldering temperature, Ts 260 wavesoldering, 1.6mm (0.063 in.) from case for 10s 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. IFAG IPC TD VLS 1 Rev. 2_3 12.06.2013 SKW07N120 Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 1 K/W RthJCD 2.5 RthJA 40 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - 2.5 3.1 3.6 - 3.7 4.3 2.0 2.4 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 8 A T j =2 5 C T j =1 5 0 C VF Diode forward voltage V V G E = 0V , I F = 7 A T j =2 5 C T j =1 5 0 C - 1.75 3 4 Gate-emitter threshold voltage VGE(th) I C = 35 0 A , V C E = V G E Zero gate voltage collector current ICES V C E =1200V,V G E =0V 5 A T j =2 5 C - - 100 T j =1 5 0 C - - 400 - - 100 nA 6 - S pF Gate-emitter leakage current IGES V C E =0V,V G E =20V Transconductance gfs V C E = 20 V , I C = 8 A Input capacitance Ciss V C E = 25 V , - 720 870 Output capacitance Coss V G E = 0V , - 90 110 Reverse transfer capacitance Crss f= 1 MH z - 40 50 Gate charge QGate V C C = 96 0 V, I C =8 A - 70 90 nC - 13 - nH - 75 - A Dynamic Characteristic V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C  10 s 10 0 V V C C  12 0 0 V, T j  1 5 0 C Allowed number of short circuits: 1s. IFAG IPC TD VLS 2 Rev. 2_3 12.06.2013 SKW07N120 Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value Unit min. typ. max. - 27 35 - 29 38 - 440 570 - 21 27 - 0.6 0.8 - 0.4 0.55 - 1.0 1.35 60 ns C IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 C , V C C = 80 0 V, I C = 8 A, V G E = 15 V /0 V , R G = 47 , 1) L  =1 8 0n H, 1) C  = 4 0p F Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =2 5 C , - tS V R = 8 00 V , I F = 8 A, - tF d i F / d t =4 0 0 A/ s - Diode reverse recovery charge Qrr - 0.3 Diode peak reverse recovery current Irrm - 9 Diode peak rate of fall of reverse recovery current during t F d i r r /d t - 400 A A/s Switching Characteristic, Inductive Load, at Tj=150 C Parameter Symbol Conditions Value Unit min. typ. max. - 30 36 - 26 31 - 490 590 - 30 36 - 1.0 1.2 - 0.7 0.9 - 1.7 2.1 170 ns IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 5 0 C V C C = 80 0 V, I C = 8 A, V G E = 15 V /0 V , R G = 47 , 1) L  =1 8 0n H, 1) C  = 4 0p F Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 5 0 C - tS V R = 8 00 V , I F = 8 A, - tF d i F / d t =5 0 0 A/ s - Diode reverse recovery charge Qrr - 1.1 C Diode peak reverse recovery current Irrm - 15 A Diode peak rate of fall of reverse recovery current during t F d i r r /d t - 110 A/s 1) Leakage inductance L and stray capacity C due to dynamic test circuit in figure E. IFAG IPC TD VLS 3 Rev. 2_3 12.06.2013 SKW07N120 35A Ic tp=5s 30A 15s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 25A TC=80°C 20A 15A TC=110°C 10A 5A 0A 10Hz Ic 100Hz 50s 200s 1A 1ms DC 0.1A 1kHz 10kHz 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 47) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj  150C) 150W 20A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 125W 100W 75W 50W 15A 10A 5A 25W 0W 25°C 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  150C) IFAG IPC TD VLS 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE  15V, Tj  150C) 4 Rev. 2_3 12.06.2013 25A 25A 20A 20A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT SKW07N120 VGE=17V 15V 13V 11V 9V 7V 15A 10A 5A 0A 0V 1V 2V 3V 4V 5V 6V 0A 0V 7V 15A TJ=+150°C TJ=+25°C TJ=-40°C 5A 7V 9V 11V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE IC, COLLECTOR CURRENT 20A 5V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) IFAG IPC TD VLS 1V 2V 3V 4V 5V 6V 7V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C) 25A 0A 3V 10A 5A VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C) 10A 15A VGE=17V 15V 13V 11V 9V 7V 6V IC=16A 5V 4V IC=8A 3V IC=4A 2V 1V 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2_3 12.06.2013 SKW07N120 1000ns td(off) t, SWITCHING TIMES t, SWITCHING TIMES td(off) tf 100ns td(on) 100ns tf td(on) tr tr 10ns 0A 5A 10A 15A 10ns 0 20A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 4 7, dynamic test circuit in Fig.E ) 20 40 60 80 100 RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 8A, dynamic test circuit in Fig.E ) t, SWITCHING TIMES td(off) 100ns tr td(on) tf 10ns -50°C 0°C 50°C 100°C VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 6V 4V max. 3V typ. 2V min. 1V 0V -50°C 150°C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 8A, RG = 47, dynamic test circuit in Fig.E ) IFAG IPC TD VLS 5V 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 Rev. 2_3 12.06.2013 SKW07N120 2.5mJ E, SWITCHING ENERGY LOSSES 5mJ 4mJ Ets* Eon* 3mJ Eoff 2mJ 1mJ *) Eon and Ets include losses due to diode recovery. E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. 0mJ 0A 5A 10A 15A 2.0mJ 1.5mJ Eon* Eoff 1.0mJ 0.5mJ 0.0mJ 0 20A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 4 7, dynamic test circuit in Fig.E ) Ets* 20 40 60 80 100 RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 8A, dynamic test circuit in Fig.E ) 2.0mJ Ets* 1.5mJ Eon* 1.0mJ Eoff 0.5mJ 0.0mJ -50°C 0 10 K/W ZthJC, TRANSIENT THERMAL IMPEDANCE E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. D=0.5 0.2 -1 0.1 10 K/W 0.05 R,(K/W) 0.1020 0.40493 0.26391 0.22904 0.02 -2 0.01 10 K/W R1 single pulse -3 0°C 50°C 100°C 10 K/W 1µs 150°C 100µs R2 C 1 =  1 / R 1 C 2 =  2 /R 2 1ms 10ms 100ms 1s tp, PULSE WIDTH Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 8A, RG = 47, dynamic test circuit in Fig.E ) IFAG IPC TD VLS 10µs , (s) 0.77957 0.21098 0.01247 0.00092 Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Rev. 2_3 12.06.2013 SKW07N120 20V 15V Ciss C, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 1nF UCE=960V 10V 100pF 5V Coss Crss 0V 0nC 20nC 40nC 60nC 80nC 0V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 8A) 20V 30V 150A IC(sc), SHORT CIRCUIT COLLECTOR CURRENT tsc, SHORT CIRCUIT WITHSTAND TIME 30s 25s 20s 15s 10s 5s 0s 10V 10V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 11V 12V 13V 14V 50A 0A 10V 15V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25C) IFAG IPC TD VLS 100A 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V  VCE  1200V, TC = 25C, Tj  150C) 8 Rev. 2_3 12.06.2013 SKW07N120 350ns 1.50µC 1.25µC 250ns Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 300ns IF=7A 200ns 150ns 100ns IF=3.5A 50ns 0ns 200A/s 400A/s 600A/s IF=7A 1.00µC 0.75µC 0.50µC 0.25µC 0.00µC 200A/s 800A/s d i F / d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E ) IF=3.5A 400A/s 600A/s 800A/s d i F / d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E ) 25A 15A 10A IF=3.5A 5A 0A 200A/s 400A/s 600A/s IF=3.5A 200A/s IF=7A 100A/s 0A/s 200A/s 800A/s d i F / d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E ) IFAG IPC TD VLS OF REVERSE RECOVERY CURRENT IF=7A d i r r /d t, DIODE PEAK RATE OF FALL Irr, REVERSE RECOVERY CURRENT 300A/s 20A 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E ) 9 Rev. 2_3 12.06.2013 SKW07N120 3.0V 20A IF=14A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 2.5V 15A TJ=150°C 10A TJ=25°C 5A 2.0V IF=7A 1.5V IF=3.5A 1.0V 0.5V 0A 0V 1V 2V 3V 0.0V 0°C 4V 40°C 80°C 120°C Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature D=0.5 0 10 K/W 0.2 0.1 R,(K/W) 0.75885 0.88470 0.85670 0.05 -1 10 K/W 0. 0 01 .0 2 ZthJCD, TRANSIENT THERMAL IMPEDANCE VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage R1 single pulse 10µs 100µs , (s) 0.09354 0.00543 0.00042 R2 C 1 =  1 / R 1 C 2 =  2 /R 2 1ms 10ms 100ms 1s tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T) IFAG IPC TD VLS 10 Rev. 2_3 12.06.2013 SKW07N120 IFAG IPC TD VLS 11 Rev. 2_3 12.06.2013 SKW07N120 i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses IFAG IPC TD VLS Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF. 12 Rev. 2_3 12.06.2013 SKW07N120 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IPC TD VLS 13 Rev. 2_3 12.06.2013