SMBTA64E6327

SMBTA64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking SMBTA64 s2V Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage VCBO 30 Emitter-base voltage VEBO 10 DC collector current IC 500 mA Peak collector current ICM 800 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TS = 81 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS ≤210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Mar-01-2005 SMBTA64 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. V(BR)CES 30 - - V(BR)CBO 30 - - V(BR)EBO 10 - - ICBO - - 100 nA ICBO - - 10 µA IEBO - - 100 nA DC Characteristics Collector-emitter breakdown voltage V IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 10 V, IC = 0 - hFE DC current gain 1) IC = 10 mA, VCE = 5 V 10000 - - IC = 100 mA, V CE = 5 V 20000 - - Collector-emitter saturation voltage1) VCEsat - - 1.5 IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) VBEsat - - 2 125 - - V IC = 100 mA, IB = 0.1 mA AC Characteristics fT Transition frequency MHz IC = 50 mA, VCE = 5 V, f = 20 MHz 1) Pulse test: t ≤ 300µs, D = 2% 2 Mar-01-2005 SMBTA64 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO ) 400 mW C CB0 ( C EB0 ) 12 pF BC 846...850 EHP00361 10 320 Ptot 280 8 C EB 240 200 6 160 4 120 80 C CB 2 40 0 0 15 30 45 60 75 90 105 120 0 10 -1 °C 150 TS 5 10 0 V VCB0 Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp) VCE = 5V EHP00362 10 3 Ptot max Ptot DC EHP00363 10 3 MHz tp tp D= T 10 1 (VEB0 ) fT 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 -1 0 5 10 0 5 10 1 mA 10 2 ΙC tp 3 Mar-01-2005 SMBTA64 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat), hFE = 20 IC = f (VCEsat), hFE = 20 EHP00364 10 2 ΙC Ι C mA 100 C 25 C -50 C 10 1 EHP00215 10 3 mA 150 ˚C 25 ˚C -50 ˚C 10 2 5 5 10 1 5 10 0 10 0 5 5 10 -1 10 -1 0 0.2 0.4 0.6 V 0.8 1.2 0 0.2 0.4 0.6 Collector cutoff current ICBO = f (TA) DC current gain hFE = f (IC ) VCB = 30V VCE = 5V Ι CB0 EHP00415 h FE 5 max 10 100 C 25 C 5 10 2 -50 C 5 typ 2 EHP00365 10 3 nA 10 3 0.8 V CEsat V BEsat 10 4 V 5 10 1 10 1 5 5 10 0 0 50 100 ˚C 10 0 10 -2 150 5 10 -1 5 10 0 5 10 1 mA 10 2 ΙC TA 4 Mar-01-2005 Package SOT23 Package Outline 1.1 MAX. 2.9 ±0.1 2 2.6 MAX. 10˚ MAX. 1.3 ±0.1 1 +0.2 acc. to DIN 6784 10˚ MAX. 3 0.4 +0.1 -0.05 0.1 MAX. B A 0.08...0.15 C 0.95 2˚... 30˚ 1.9 0.25 M B C 0.20 M A Foot Print 0.9 1.1 0.9 0.8 0.8 1.2 Marking Layout Manufacturer Pin 1 Date code (Year/Month) 2003, July Type code BCW66 Example Packing Code E6327: Reel ø180 mm = 3.000 Pieces/Reel Code E6433: Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 3.15 8 2.65 2.13 0.9 1.15 Impressum Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.