SPA06N60C3

SPA06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS(on),max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances P-TO220-3-31 • Extreme dv /dt rated • Improved transconductance • Fully isolated package (2500 V AC; 1 minute) Type Package Ordering Code Marking SPA06N60C3 PG-TO220-3-31 Q67040-S4631 06N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current 1) ID Value T C=25 °C 6.2 T C=100 °C 3.9 Pulsed drain current1) I D,pulse T C=25 °C 18.6 Avalanche energy, single pulse E AS I D=3.1 A, V DD=50 V 200 Avalanche energy, repetitive t AR1),2) E AR I D=6.2 A, V DD=50 V 0.5 Avalanche current, repetitive t AR1) I AR Drain source voltage slope dv /dt Gate source voltage Unit A mJ 6.2 A I D=6.2 A, V DS=480 V, T j=125 °C 50 V/ns V GS static ±20 V V GS AC (f >1 Hz) ±30 Power dissipation P tot T C=25 °C 32 W Operating and storage temperature T j, T stg -55 ... 150 °C Rev. 1.3 Rev 1.4 page 1 1 2010-12-21 2017-08-17 SPA06N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - - 3.92 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 80 Soldering temperature T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V - 700 - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=6.2 A Gate threshold voltage V GS(th) V DS=V GS, I D=0.26 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=600 V, V GS=0 V, T j=150 °C - - 100 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=3.9 A, T j=25 °C - 0.68 0.75 Ω V GS=10 V, I D=3.9 A, T j=150 °C - 1.82 - Gate resistance RG f =1 MHz, open drain - 1 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=3.9 A - 5.6 - Rev. 1.3 Rev 1.4 page 2 2 S 2010-12-21 2017-08-17 SPA06N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - 620 - - 200 - - 17 - - 28 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy related3) C o(er) Effective output capacitance, time related4) C o(tr) - 47 - Turn-on delay time t d(on) - 7 - Rise time tr - 12 - Turn-off delay time t d(off) - 52 - Fall time tf - 10 - Gate to source charge Q gs - 3.3 - Gate to drain charge Q gd - 12 - Gate charge total Qg - 24 31 Gate plateau voltage V plateau - 5.5 - V GS=0 V, V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=480 V, V GS=10 V, I D=6.2 A, R G=12 Ω ns Gate Charge Characteristics V DD=480 V, I D=6.2 A, V GS=0 to 10 V 1) Pulse width limited by maximum temperature T j,max only 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 4) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 1.3 Rev 1.4 page 3 3 nC V 2010-12-21 2017-08-17 SPA06N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - - 6.2 - - 18.6 - 0.97 1.2 V - 400 - ns - 3.5 - µC - 25 - A Reverse Diode Diode continuous forward current IS A T C=25 °C Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=6.2 A, T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol typ. R th1 0.034 R th2 Value typ. C th1 0.0000507 0.15 C th2 0.00045 R th3 0.388 C th3 0.00117 R th4 0.713 C th4 0.0114 R th5 1.6 C th5 0.939 Rev. 1.3 Rev 1.4 Unit K/W page 4 4 Ws/K 2010-12-21 2017-08-17 SPA06N60C3 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 40 102 limited by on-state resistance 1 µs 30 10 1 10 µs I D [A] P tot [W] 100 µs 20 100 1 ms DC 10 10-1 0 10-2 0 40 80 120 100 160 101 10 ms 102 103 V DS [V] T C [°C] 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 101 20 20 V 7V 16 0.5 100 6.5 V 0.2 Z thJC [K/W] 12 6V I D [A] 0.1 0.05 8 10 -1 5.5 V 0.02 0.01 single pulse 5V 4 4.5 V 4V 10-2 10-6 0 10-5 10-4 10-3 10-2 10-1 100 101 0 Rev. 1.3 Rev 1.4 5 10 15 20 V DS [V] t p [s] page 5 5 2010-12-21 2017-08-17 SPA06N60C3 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 8 4 6V 20 V V4 V 4.5 V 5.5 V5 5.5 V 7V 6.5 V 6 3 R DS(on) [Ω] V6 I D [A] 5V 4 V 20 2 4.5 V 2 1 4V 0 0 0 5 10 15 20 0 2 4 6 8 10 I D [A] V DS [V] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=3.9 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 2 25 1.6 20 1.2 15 I D [A] R DS(on) [Ω] C °25 98 % 0.8 10 typ C °150 5 0.4 0 0 -60 -20 20 60 100 140 0 180 Rev. 1.3 Rev 1.4 2 4 6 8 10 V GS [V] T j [°C] page 6 6 2010-12-21 2017-08-17 SPA06N60C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=6.2 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 12 10 25 °C V 120 25 °C, 98% V 480 150 °C, 98% 101 8 I F [A] V GS [V] 150 °C 6 100 4 2 10-1 0 0 10 20 0 30 0.5 Q gate [nC] 1 1.5 2 2.5 V SD [V] 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=3.1 A; V DD=50 V parameter: T j(start) 8 250 200 6 E AS [mJ] I AV [A] 150 4 100 25 °C 125 °C 2 50 0 10-3 0 10-2 10-1 100 101 102 103 20 t AR [µs] Rev. 1.3 Rev 1.4 60 100 140 180 T j [°C] page 7 7 2010-12-21 2017-08-17 SPA06N60C3 14 Typ. capacitances V BR(DSS)=f(T j); I D=0.25 mA C =f(V DS); V GS=0 V; f =1 MHz 700 104 660 103 C [pF] V BR(DSS) [V] 13 Drain-source breakdown voltage 620 Ciss 102 Coss 580 101 540 100 -60 -20 20 60 100 140 Crss 0 180 T j [°C] 100 200 300 400 500 V DS [V] 15 Typ. C oss stored energy E oss= f(V DS) 5 4 E oss [µJ] 3 2 1 0 0 100 200 300 400 500 600 V DS [V] Rev. 1.3 Rev 1.4 page 8 8 2010-12-21 2017-08-17 SPA06N60C3 Definition of diode switching characteristics Rev. 1.3 Rev 1.4 page 9 9 2010-12-21 2017-08-17 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 Q Rev 1.4 10 MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.85 2.42 2.86 0.65 0.90 0.95 1.38 0.95 1.51 0.65 1.38 0.65 1.51 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 28.70 29.75 12.78 13.75 3.45 2.83 3.00 3.30 3.15 3.50 DOCUMENT NO. Z8B00003319 REVISION 07 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 27.01.2017 2017-08-17 SPA06N60C3 Revision History SPA06N60C3 Revision: 2017-08-17, Rev. 1.4 Previous Revision: Revision Date 1.4 2017-08-17 Subjects (major changes since last version) Updated package drawing on Page 10 Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™,EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™, ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PROSIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™, thinQ ™, TRENCHSTOP™, TriCore™ Trademarks updated August 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation andaerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.4 11 2017-08-17