SPA07N60C3XKSA1

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • High peak current capability 1 • Improved transconductance 2 3 1 23 P-TO220-3-31 P-TO220-3-1 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type SPP07N60C3 Package PG-TO220-3 Ordering Code Q67040-S4400 Marking 07N60C3 SPI07N60C3 PG-TO262 Q67040-S4424 07N60C3 SPA07N60C3 PG-TO220FP SP000216303 07N60C3 Maximum Ratings Parameter Symbol SPP_I Continuous drain current Unit Value SPA A ID TC = 25 °C 7.3 7.31) TC = 100 °C 4.6 4.61) ID puls 21.9 21.9 A EAS 230 230 mJ EAR 0.5 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 7.3 A Gate source voltage static VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 83 32 Operating and storage temperature T j , Tstg Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.3A, VDD =50V Reverse diode dv/dt Rev. 3.2 Rev. 3.3 6) dv/dt Page 1 Page 1 -55...+150 15 W °C V/ns 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, ID = 7.3 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 3) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T j=25°C unless otherwise specified Symbol Conditions Parameter Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=7.3A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=350µA, VGS=VDS Zero gate voltage drain current I DSS VDS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 3.2 Rev. 3.3 RG µA Tj=25°C - 0.5 1 Tj=150°C - - 100 VGS=30V, VDS=0V - - 100 VGS=10V, ID=4.6A Ω Tj=25°C - 0.54 0.6 Tj=150°C - 1.46 - f=1MHz, open drain - 0.8 - Page 2 Page 2 nA 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 6 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=4.6A Input capacitance Ciss V GS=0V, V DS=25V, - 790 - Output capacitance Coss f=1MHz - 260 - Reverse transfer capacitance Crss - 16 - - 30 - - 55 - Effective output capacitance,4) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance,5) Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/13V, - 6 - Rise time tr ID=7.3A, RG=12Ω, - 3.5 - Turn-off delay time td(off) Tj=125°C - 60 100 Fall time tf - 7 15 - 3 - - 9.2 - - 21 27 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=480V, ID=7.3A VDD=480V, ID=7.3A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=7.3A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 6I