SPA11N80C3
CoolMOSTM Power Transistor
Product Summary
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
V DS
800
V
R DS(on)max @ Tj = 25°C
0.45
Ω
64
nC
Q g,typ
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute)
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Type
Package
Marking
SPA11N80C3
PG-TO220-3
11N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current2)
ID
Value
T C=25 °C
11
T C=100 °C
7.1
Pulsed drain current3)
I D,pulse
T C=25 °C
33
Avalanche energy, single pulse
E AS
I D=2.2 A, V DD=50 V
470
Avalanche energy, repetitive t AR3),4)
E AR
I D=11 A, V DD=50 V
0.2
Avalanche current, repetitive t AR3),4)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Mounting torque
Rev. 2.93
Unit
A
mJ
11
A
V DS=0…640 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
34
-55 ... 150
M2.5 screws
Page 1
50
W
°C
Ncm
2018-02-12
SPA11N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
Continuous diode forward current
IS
Diode pulse current3)
I S,pulse
33
Reverse diode dv /dt 5)
dv /dt
4
V/ns
Parameter
Symbol Conditions
Values
Unit
11
A
T C=25 °C
min.
typ.
max.
-
-
3.7
leaded
-
-
80
1.6 mm (0.063 in.)
from case for 10s
-
-
260
°C
800
-
-
V
-
870
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
Soldering temperature,
T sold
wave soldering only allowed at leads
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Avalanche breakdown voltage
V (BR)DS
V GS=0 V, I D=11 A
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.68 mA
2.1
3
3.9
Zero gate voltage drain current
I DSS
V DS=800 V, V GS=0 V,
T j=25 °C
-
-
20
V DS=800 V, V GS=0 V,
T j=150 °C
-
100
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=7.1 A,
T j=25 °C
-
0.39
0.45
Ω
V GS=10 V, I D=7.1 A,
T j=150 °C
-
1.05
-
f =1 MHz, open drain
-
1.2
-
Gate resistance
Rev. 2.93
RG
Page 2
Ω
2018-02-12
SPA11N80C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1600
-
-
65
-
-
50
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
C o(er)
related6)
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related7)
C o(tr)
-
140
-
Turn-on delay time
t d(on)
-
25
-
Rise time
tr
-
15
-
Turn-off delay time
t d(off)
-
72
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
8
-
Gate to drain charge
Q gd
-
30
-
Gate charge total
Qg
-
64
85
Gate plateau voltage
V plateau
-
5.5
-
V
-
1
1.2
V
-
550
-
ns
-
10
-
µC
-
33
-
A
V DD=400 V,
V GS=0/10 V, I D=11 A,
R G=7.5 ? , Tj = 25°C
ns
Gate Charge Characteristics
V DD=640 V, I D=11 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=I S=11 A,
T j=25 °C
V R=400 V,
I F=I S=11 A,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Limited only by maximum temperature
3)
Pulse width t p limited by T j,max
4)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
5)
ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak