SPP16N50C3
SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature
VDS @ Tjmax
560
V
RDS(on)
0.28
Ω
ID
16
A
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
PG-TO220FP
PG-TO262
PG-TO220
• Extreme dv/dt rated
2
• Ultra low effective capacitances
1
• Improved transconductance
2
3
1
23
P-TO220-3-31
P-TO220-3-1
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
SPP16N50C3
Package
PG-TO220
Ordering Code
Q67040-S4583
Marking
16N50C3
SPI16N50C3
PG-TO262
Q67040-S4582
16N50C3
SPA16N50C3
PG-TO220FP
SP000216351
16N50C3
Maximum Ratings
SPA
SPP_I
Continuous drain current
Unit
Value
Symbol
Parameter
A
ID
TC = 25 °C
16
161)
TC = 100 °C
10
101)
48
48
EAS
460
460
EAR
0.64
0.64
Avalanche current, repetitive tAR limited by Tjmax
IAR
16
16
A
Gate source voltage
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
160
34
Operating and storage temperature
Reverse diode dv/dt 6)
Tj , Tstg
dv/dt
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID puls
A
mJ
ID=8, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=16A, VDD=50V
Rev. 3.2
page 1
-55...+150
15
W
°C
V/ns
2009-12-22
SPP16N50C3
SPI16N50C3, SPA16N50C3
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
50
V/ns
Values
Unit
V DS = 400 V, ID = 16 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
0.78
Thermal resistance, junction - case, FullPAK
RthJC_FP
-
-
3.7
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA FP
Tsold
-
-
80
-
-
260
Soldering temperature, wavesoldering
K/W
°C
1.6 mm (0.063 in.) from case for 10s 3)
Electrical Characteristics, at T j=25°C unless otherwise specified
Symbol
Conditions
Parameter
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=16A
Values
Unit
min.
typ.
max.
500
-
-
-
600
-
2.1
3
3.9
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=675µA, VGS=VDS
Zero gate voltage drain current
I DSS
VDS=500V, VGS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev. 3.2
RG
µA
Tj=25°C
-
0.1
1
Tj=150°C
-
-
100
VGS=20V, VDS=0V
-
-
100
Ω
VGS=10V, ID=10A
Tj=25°C
-
0.25
0.28
Tj=150°C
-
0.68
-
f=1MHz, open drain
-
1.5
-
page 2
nA
2009-12-22
SPP16N50C3
SPI16N50C3, SPA16N50C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
14
-
S
pF
Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
ID=10A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
1600
-
Output capacitance
Coss
f=1MHz
-
800
-
Reverse transfer capacitance
Crss
-
30
-
-
64
-
-
124
-
Effective output capacitance,4) Co(er)
V GS=0V,
energy related
V DS=0V to 400V
Effective output capacitance,5) Co(tr)
time related
Turn-on delay time
td(on)
V DD=380V, V GS=0/10V,
-
10
-
Rise time
tr
ID=16A, RG =4.3Ω
-
8
-
Turn-off delay time
td(off)
-
50
-
Fall time
tf
-
8
-
-
7
-
-
36
-
-
66
-
-
5
-
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=380V, ID=16A
VDD=380V, ID=16A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=380V, ID=16A
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Soldering temperature for TO-263: 220°C, reflow
4C
o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
6I
