SPB12N50C3
Cool MOS™ Power Transistor
Feature
VDS @ Tjmax
560
V
RDS(on)
0.38
Ω
ID
11.6
A
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
PG-TO263
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
-
Type
Package
Ordering Code
Marking
SPB12N50C3
PG-TO263
Q67040-S4641
12N50C3
Maximum Ratings
Unit
Value
Symbol
Parameter
SPB
Continuous drain current
A
ID
TC = 25 °C
11.6
TC = 100 °C
7
ID puls
34.8
A
EAS
340
mJ
EAR
0.6
Avalanche current, repetitive tAR limited by Tjmax
IAR
11.6
A
Gate source voltage
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, TC = 25°C
Ptot
125
Operating and storage temperature
Reverse diode dv/dt 7)
T j , Tstg
dv/dt
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD =50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11.6A, VDD=50V
Rev. 2.4
Page 1
W
-55...+150
15
°C
V/ns
2005-11-07
SPB12N50C3
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
50
V/ns
Values
Unit
V DS = 400 V, ID = 11.6 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1
Thermal resistance, junction - case, FullPAK
RthJC_FP
-
-
3.8
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA_FP
-
-
80
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm 2 cooling area 3)
-
35
-
-
-
260
Soldering temperature, reflow soldering, MSL1
Tsold
K/W
°C
1.6 mm (0.063 in.) from case for 10s 4)
Electrical Characteristics, at T j=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=11.6A
Values
Unit
min.
typ.
max.
500
-
-
-
600
-
2.1
3
3.9
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=500µA, VGS=VDS
Zero gate voltage drain current
I DSS
VDS=500V, VGS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev. 2.4
RG
µA
Tj=25°C
-
0.1
1
Tj=150°C
-
-
100
VGS=20V, VDS=0V
-
-
100
Ω
VGS=10V, ID=7A
Tj=25°C
-
0.34
0.38
Tj=150°C
-
0.92
-
f=1MHz, open drain
-
1.4
-
Page 2
nA
2005-11-07
SPB12N50C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
8
-
S
pF
Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
ID=7A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
1200
-
Output capacitance
Coss
f=1MHz
-
400
-
Reverse transfer capacitance
Crss
-
30
-
-
45
-
-
92
-
Effective output capacitance,5) Co(er)
V GS=0V,
energy related
V DS=0V to 400V
Effective output capacitance,6) Co(tr)
time related
Turn-on delay time
td(on)
V DD=380V, V GS=0/10V,
-
10
-
Rise time
tr
ID=11.6A, R G=6.8Ω
-
8
-
Turn-off delay time
td(off)
-
45
-
Fall time
tf
-
8
-
-
5
-
-
26
-
-
49
-
-
5
-
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=400V, ID=11.6A
VDD=400V, ID=11.6A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=400V, ID=11.6A
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5C
o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
6C
is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V
.
o(tr)
DSS
7I