SPB160N04S2L03DTMA1

SPB160N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS(on) max. SMD version 2.7 mΩ ID 160 A • Logic Level • High Current Rating P- TO263 -7-3 • Low On-Resistance RDS(on) • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package SPB160N04S2L-03 P- TO263 -7-3 Ordering Code Q67060-S6138 Marking P2N04L03 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Value Unit A TC=25°C 160 TC=100°C 160 ID puls 640 EAS 810 Repetitive avalanche energy, limited by Tjmax 2) EAR 30 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 300 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=80A, V DD=25V, RGS=25Ω kV/µs IS=160A, VDS=32V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-05-22 SPB160N04S2L-03 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 40 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID =250µA Zero gate voltage drain current µA IDSS V DS=40V, VGS=0V, Tj=25°C - 0.01 1 V DS=40V, VGS=0V, Tj=125°C - 1 100 IGSS - 1 100 nA RDS(on) - 2.7 3.7 mΩ RDS(on) - 2.1 2.7 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=80A Drain-source on-state resistance V GS=10V, I D=80A 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 243A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-22 SPB160N04S2L-03 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 115 230 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =160A Input capacitance Ciss VGS =0V, VDS =25V, - 6000 8000 pF Output capacitance Coss f=1MHz - 1900 2530 Reverse transfer capacitance Crss - 460 690 Turn-on delay time td(on) VDD =20V, VGS =10V, - 12 18 Rise time tr ID =160A, - 80 120 Turn-off delay time td(off) RG =1.1Ω - 93 140 Fall time tf - 72 110 - 21 28 - 60 90 - 170 230 V(plateau) VDD =32V, ID =160A - 3.7 - V IS - - 160 A - - 640 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =32V, ID =160A VDD =32V, ID =160A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0V, IF=80A - 0.9 1.3 V Reverse recovery time trr V R=20V, I F=lS, - 62 78 ns Reverse recovery charge Qrr diF/dt=100A/µs - 145 180 nC Page 3 2003-05-22 SPB160N04S2L-03 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 4 V parameter: VGS≥ 10 V SPB160N04S2L-03 320 SPB160N04S2L-03 170 A W 140 240 ID P tot 120 200 160 100 80 120 60 80 40 40 20 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPB160N04S2L-03 10 t = 7.2µs p K/W /I D 10 µs DS A 1 SPB160N04S2L-03 0 R DS (on ) = V 10 Z thJC 100 µs 2 ID 10 1 ms 10 -1 10 -2 D = 0.50 0.20 10 1 10 -3 0.10 0.05 single pulse 10 0 10 -1 10 0 10 1 V 10 2 VDS 10 -4 10 -5 0.02 0.01 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp Page 4 2003-05-22 0 SPB160N04S2L-03 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPB160N04S2L-03 380 A i Ω h VGS [V] a 2.8 b 3.0 c 3.2 d 3.4 e 3.6 f 3.8 f g 4.0 h 4.5 i 10.0 280 g 240 200 160 e d 8 R DS(on) 320 ID SPB160N04S2L-03 10 Ptot = 300W e f g 7 6 5 4 h 120 3 d 80 b 40 i 2 c VGS [V] = 1 d 3.4 a 0 0 0.5 1 1.5 2 2.5 3 3.5 V 4 e f 3.6 3.8 g 4.0 h i 4.5 10.0 0 5 0 40 80 120 160 200 240 A VDS 300 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 200 260 S A 220 160 200 180 gfs ID 140 120 160 140 100 120 80 100 60 80 60 40 40 20 20 0 0 0.5 1 1.5 2 2.5 3 V VGS 0 4 Page 5 0 20 40 60 80 100 120 140 160 A ID 200 2003-05-22 SPB160N04S2L-03 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 80 A, VGS = 10 V parameter: VGS = VDS SPB160N04S2L-03 8 2.4 V Ω 6 V GS(th) R DS(on) 2 5 1.8 1.25 mA 1.6 1.4 4 250 µA 1.2 1 98% 3 0.8 typ 2 0.6 0.4 1 0.2 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 Tj 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 5 10 pF A 4 10 2 10 1 IF Ciss C 10 3 SPB160N04S2L-03 Coss 10 3 Crss T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 0 10 5 10 15 20 V 30 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD V DS Page 6 2003-05-22 SPB160N04S2L-03 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 80 A, V DD = 25 V, R GS = 25 Ω parameter: ID = 160 A pulsed 850 SPB160N04S2L-03 16 mJ V 700 12 VGS E AS 600 500 10 0,2 VDS max 0,8 VDS max 8 400 6 300 200 4 100 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 40 80 120 160 200 nC 260 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 48 SPB160N04S2L-03 V V(BR)DSS 46 45 44 43 42 41 40 39 38 37 36 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-22 SPB160N04S2L-03 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPB160N04S2L-03, for simplicity the device is referred to by the term SPB160N04S2L-03 throughout this documentation. Page 8 2003-05-22