SPB16N50C3ATMA1

SPB16N50C3 Cool MOS™ Power Transistor Feature VDS @ Tjmax 560 V RDS(on) 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPB16N50C3 PG-TO263 Q67040-S4642 16N50C3 Maximum Ratings Parameter Symbol Value Unit SPB Continuous drain current A ID TC = 25 °C 16 TC = 100 °C 10 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID puls 48 A EAS 460 mJ EAR 0.64 Avalanche current, repetitive tAR limited by Tjmax IAR 16 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 160 Operating and storage temperature T j , Tstg ID=8, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=16A, VDD=50V Reverse diode dv/dt Rev. 2.4 6) dv/dt Page 1 W -55...+150 °C 15 V/ns 2005-11-07 SPB16N50C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 400 V, ID = 16 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 0.78 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.7 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA FP Tsold - - 80 - - 260 Soldering temperature, reflow soldering, MSL1 K/W °C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at T j=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=16A Values Unit min. typ. max. 500 - - - 600 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=675µA, VGS=VDS Zero gate voltage drain current I DSS VDS=500V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.4 RG µA Tj=25°C - 0.1 1 Tj=150°C - - 100 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=10A Tj=25°C - 0.25 0.28 Tj=150°C - 0.68 - f=1MHz, open drain - 1.5 - Page 2 nA 2005-11-07 SPB16N50C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 14 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=10A Input capacitance Ciss V GS=0V, V DS=25V, - 1600 - Output capacitance Coss f=1MHz - 800 - Reverse transfer capacitance Crss - 30 - - 64 - - 124 - Effective output capacitance,4) Co(er) V GS=0V, energy related V DS=0V to 400V Effective output capacitance,5) Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 10 - Rise time tr ID=16A, RG =4.3Ω - 8 - Turn-off delay time td(off) - 50 - Fall time tf - 8 - - 7 - - 36 - - 66 - - 5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=380V, ID=16A VDD=380V, ID=16A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=380V, ID=16A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Soldering temperature for TO-263: 220°C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 6I