SPB17N80C3
CoolMOS® Power Transistor
Product Summary
Features
• new revolutionary high voltage technology
• Extreme dv/dt rated
V DS
800
V
R DS(on)max @ Tj = 25°C
0.29
Ω
91
nC
Q g,typ
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO263
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Type
Package
Marking
SPB17N80C3
PG-TO263
17N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
17
T C=100 °C
11
Pulsed drain current2)
I D,pulse
T C=25 °C
51
Avalanche energy, single pulse
E AS
I D=3.4 A, V DD=50 V
670
Avalanche energy, repetitive t AR2),3)
E AR
I D=17 A, V DD=50 V
0.5
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Rev. 2.5
Unit
A
mJ
17
A
V DS=0…640 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
227
W
-55 ... 150
°C
page 1
2011-09-27
SPB17N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current 2)
I S,pulse
Reverse diode dv /dt 4)
dv /dt
Parameter
Symbol Conditions
Value
Unit
17
T C=25 °C
A
51
4
V/ns
Values
Unit
min.
typ.
max.
-
-
0.55
SMD version, device
on PCB, minimal
footprint
-
-
62
SMD version, device
on PCB, 6 cm2 cooling
area4)
-
35
-
MSL1; 10s
-
-
260
°C
800
-
-
V
-
870
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
Thermal resistance, junction ambient
Soldering temperature,
reflow soldering
T sold
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Avalanche breakdown voltage
V (BR)DS
V GS=0 V, I D=17 A
Gate threshold voltage
V GS(th)
V DS=V GS, I D=1.0 mA
2.1
3
3.9
Zero gate voltage drain current
I DSS
V DS=800 V, V GS=0 V,
T j=25 °C
-
-
25
V DS=800 V, V GS=0 V,
T j=150 °C
-
150
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=11 A,
T j=25 °C
-
0.25
0.29
Ω
V GS=10 V, I D=11 A,
T j=150 °C
-
0.67
-
f =1 MHz, open drain
-
0.85
-
Gate resistance
Rev. 2.5
RG
page 2
Ω
2011-09-27
SPB17N80C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2300
-
-
94
-
-
72
-
-
210
-
-
25
-
-
15
-
-
72
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related6)
C o(er)
Effective output capacitance, time
related7)
C o(tr)
Turn-on delay time
t d(on)
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=0/10 V, I D=17 A,
R G=4.7 Ω,
Tj = 125°C
ns
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
-
12
-
Gate to source charge
Q gs
-
12
-
Gate to drain charge
Q gd
-
45
-
Gate charge total
Qg
-
88
117
Gate plateau voltage
V plateau
-
5.5
-
V
-
1
1.2
V
-
550
-
ns
-
15
-
µC
-
51
-
A
Gate Charge Characteristics
V DD=640 V, I D=17 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=IS,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD≤ID, di/dt≤200A/µs, VDClink = 400V, Vpeak
