SPD02N80C3

SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS(on)max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant ; available in Halogen free mold compounda) • Ultra low gate charge PG-TO252-3 • Ultra low effective capacitances CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.e. active clamp forward ) Type Package Marking SPD02N80C3 PG-TO252-3 02N80C3 xsx Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 2 T C=100 °C 1.2 Pulsed drain current2) I D,pulse T C=25 °C 6 Avalanche energy, single pulse E AS I D=1 A, V DD=50 V 90 Avalanche energy, repetitive t AR2),3) E AR I D=2 A, V DD=50 V 0.05 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg a) Unit A mJ 2 A V DS=0…640 V 50 V/ns static ±20 V AC (f >1 Hz) ±30 T C=25 °C 42 W -55 ... 150 °C non-Halogen free (OPN: SPD02N80C3BT); Halogen free (OPN: SPD02N80C3AT) Rev. 2.92 2.91 page 1 2013-07-31 2011-09-28 SPD02N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Value Unit 2 A T C=25 °C Diode pulse current2) I S,pulse 6 Reverse diode dv /dt 4) dv /dt 4 V/ns Parameter Symbol Conditions Values Unit min. typ. max. - - 3 SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB, 6 cm2 cooling area5) - 35 - reflow MSL1 - - 260 °C 800 - - V - 870 - Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient Soldering temperature, reflow soldering T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=2 A Gate threshold voltage V GS(th) V DS=V GS, I D=0.12 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=800 V, V GS=0 V, T j=25 °C - - 5 V DS=800 V, V GS=0 V, T j=150 °C - 25 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=1.2 A, T j=25 °C - 2.4 2.7 W V GS=10 V, I D=1.2 A, T j=150 °C - 6.5 - f =1 MHz, open drain - 1.2 - Gate resistance 2.92 Rev. 2.91 RG page 2 W 2013-07-31 2011-09-28 SPD02N80C3 Parameter Values Symbol Conditions Unit min. typ. max. - 290 - - 13 - - 11 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy C o(er) related6) V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related7) C o(tr) - 26 - Turn-on delay time t d(on) - 25 - Rise time tr - 15 - Turn-off delay time t d(off) - 72 - Fall time tf - 18 - Gate to source charge Q gs - 1.5 - Gate to drain charge Q gd - 6 - Gate charge total Qg - 12 16 Gate plateau voltage V plateau - 5.5 - V - 1 1.2 V - 520 - ns - 2 - µC - 6 - A V DD=400 V, V GS=0/10 V, I D=2 A, R G=47 ? , T j=25 °C ns Gate Charge Characteristics V DD=640 V, I D=2 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=I S=2 A, T j=25 °C V R=400 V, I F=I S=2 A, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak