SPD08N50C3

SPD08N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V RDS(on) 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance , available in Halogen free mold compounda) • Fully qualified according to JEDEC for Industrial Applications Type Package Ordering Code Marking SPD08N50C3 PG-TO252 Q67040-S4569 08N50C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 7.6 TC = 100 °C 4.6 Pulsed drain current, t p limited by Tjmax ID puls 22.8 Avalanche energy, single pulse EAS 230 EAR 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 7.6 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 83 W Operating and storage temperature Tj , Tstg dv/dt -55... +150 °C mJ ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax1) ID=7.6A, VDD=50V Reverse diode dv/dt 6) non-Halogen free (OPN: SPD08N50C3BT), Halogen free (OPN: SPD08N50C3AT) Rev. 2.7 Page 1 15 V/ns a) 2020-05-15 SPD08N50C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit VDS = 400 V, ID = 7.6 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 2) - - 50 - - 260 Soldering temperature, reflow soldering, MSL3 Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=7.6A Values Unit min. typ. max. 500 - - - 600 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=350µΑ, VGS=V DS Zero gate voltage drain current I DSS VDS=500V, V GS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.7 RG µA Tj=25°C, - 0.5 1 Tj=150°C - - 100 VGS=20V, V DS=0V - - 100 VGS=10V, ID =4.6A, Ω Tj=25°C - 0.5 0.6 Tj=150°C - 1.5 - f=1MHz, open Drain - 1.2 - Page 2 nA 2020-05-15 SPD08N50C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol gfs Conditions VDS≥2*ID*R DS(on)max, Values Unit min. typ. max. - 6 - S pF ID=4.6A Input capacitance Ciss VGS=0V, VDS=25V, - 750 - Output capacitance Coss f=1MHz - 350 - Reverse transfer capacitance Crss - 12 - - 56 - - 30 - Effective output capacitance,4) Co(er) VGS=0V, energy related VDS=0V to 400V Effective output capacitance,5) Co(tr) pF time related Turn-on delay time td(on) VDD=400V, VGS=0/10V, - 6 - Rise time tr ID=7.6A, RG =12Ω - 5 - Turn-off delay time td(off) - 60 - Fall time tf - 7 - - 3 - - 17 - - 32 - - 5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=400V, ID=7.6A V DD=400V, ID=7.6A, ns nC V GS=0 to 10V Gate plateau voltage V(plateau) VDD=400V, ID=7.6A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 6I